JPS6481217A - Vapor growth apparatus - Google Patents

Vapor growth apparatus

Info

Publication number
JPS6481217A
JPS6481217A JP23960787A JP23960787A JPS6481217A JP S6481217 A JPS6481217 A JP S6481217A JP 23960787 A JP23960787 A JP 23960787A JP 23960787 A JP23960787 A JP 23960787A JP S6481217 A JPS6481217 A JP S6481217A
Authority
JP
Japan
Prior art keywords
tube
nozzle tube
gas
reaction gas
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23960787A
Other languages
Japanese (ja)
Other versions
JPH0670979B2 (en
Inventor
Seiichi Shishiguchi
Fumitoshi Toyokawa
Masao Mikami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62239607A priority Critical patent/JPH0670979B2/en
Priority to US07/247,850 priority patent/US4992301A/en
Priority to EP88115622A priority patent/EP0308946B1/en
Priority to DE88115622T priority patent/DE3885833T2/en
Publication of JPS6481217A publication Critical patent/JPS6481217A/en
Publication of JPH0670979B2 publication Critical patent/JPH0670979B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To uniformize the thickness in a substrate surface, by providing rows of gas blowoff holes on the side of a nozzle tube facing a substrate for vapor phase epitaxy, in a longitudinal direction of the nozzle tube and by making the gas blown off from the rows of gas blowoff holes spread and flow radiately on the vapor grown surface. CONSTITUTION:An apparatus comprises a stand 3 for supporting the apparatus, a reaction tube of a two-tube structure comprising an outer tube 1 and an inner tube 2, a substrate holder 4 for holding a single-crystal substrate 5, resistance heating ovens 6 and a nozzle tube 7 for supplying a reaction gas. The reaction gas is blown off from the cylindrical nozzle tube 7 and exhausted from an outlet 9 through gas outlet holes 8 provided on the wall surface of the inner tube. Many reaction gas blowoff holes 10 are provided on the nozzle tube 7. Since they are provided in rows on the cylindrical surface of the nozzle tube 7 facing to the substrates 5, the reaction gas blown off from the nozzle tube 7 can be spread and supplied radiately about the nozzle tube 7 over the wide region within a horizontal surface.
JP62239607A 1987-09-22 1987-09-22 Vapor phase growth equipment Expired - Fee Related JPH0670979B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP62239607A JPH0670979B2 (en) 1987-09-22 1987-09-22 Vapor phase growth equipment
US07/247,850 US4992301A (en) 1987-09-22 1988-09-22 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
EP88115622A EP0308946B1 (en) 1987-09-22 1988-09-22 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
DE88115622T DE3885833T2 (en) 1987-09-22 1988-09-22 Chemical vapor deposition apparatus for the production of high quality epitaxial layers with a uniform density.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62239607A JPH0670979B2 (en) 1987-09-22 1987-09-22 Vapor phase growth equipment

Publications (2)

Publication Number Publication Date
JPS6481217A true JPS6481217A (en) 1989-03-27
JPH0670979B2 JPH0670979B2 (en) 1994-09-07

Family

ID=17047262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62239607A Expired - Fee Related JPH0670979B2 (en) 1987-09-22 1987-09-22 Vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPH0670979B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263629A (en) * 1986-05-12 1987-11-16 Hitachi Ltd Vapor growth device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263629A (en) * 1986-05-12 1987-11-16 Hitachi Ltd Vapor growth device

Also Published As

Publication number Publication date
JPH0670979B2 (en) 1994-09-07

Similar Documents

Publication Publication Date Title
JPS6481217A (en) Vapor growth apparatus
JPS5673694A (en) Vertical type vapor phase growing method and apparatus
JPS6481214A (en) Vapor growth apparatus
JPS6481215A (en) Vapor growth apparatus
CA2051214A1 (en) Vacuum Film Forming Apparatus
JPS55110030A (en) Method for vapor growth
JPS6447018A (en) Vapor growth device
JPS55167041A (en) Vertical type gaseous phase growth device
JPS5713746A (en) Vapor-phase growing apparatus
JPS5754328A (en) Decompressed vapor-phase growing device
JPS6171625A (en) Vertical cvd device
JPS5710937A (en) Plasma gaseous phase growth device
JPS6417423A (en) Semiconductor crystal growth device
GB1427342A (en) Gas burners and assemblies thereof
JPS63140619U (en)
JPS6480019A (en) Vapor growth device
JPH044736U (en)
JPS55110031A (en) Method for vapor growth
JPH0530350Y2 (en)
JPS6489320A (en) Vapor growth method
JPS61186289A (en) Vapor-phase crystal growth apparatus
JPS56120600A (en) Vapor phase growing method
JPS5518077A (en) Device for growing film under gas
JPS6481309A (en) Vapor growth apparatus
JPS6482631A (en) Atmospheric pressure cvd system

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees