JPS6481217A - Vapor growth apparatus - Google Patents
Vapor growth apparatusInfo
- Publication number
- JPS6481217A JPS6481217A JP23960787A JP23960787A JPS6481217A JP S6481217 A JPS6481217 A JP S6481217A JP 23960787 A JP23960787 A JP 23960787A JP 23960787 A JP23960787 A JP 23960787A JP S6481217 A JPS6481217 A JP S6481217A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- nozzle tube
- gas
- reaction gas
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To uniformize the thickness in a substrate surface, by providing rows of gas blowoff holes on the side of a nozzle tube facing a substrate for vapor phase epitaxy, in a longitudinal direction of the nozzle tube and by making the gas blown off from the rows of gas blowoff holes spread and flow radiately on the vapor grown surface. CONSTITUTION:An apparatus comprises a stand 3 for supporting the apparatus, a reaction tube of a two-tube structure comprising an outer tube 1 and an inner tube 2, a substrate holder 4 for holding a single-crystal substrate 5, resistance heating ovens 6 and a nozzle tube 7 for supplying a reaction gas. The reaction gas is blown off from the cylindrical nozzle tube 7 and exhausted from an outlet 9 through gas outlet holes 8 provided on the wall surface of the inner tube. Many reaction gas blowoff holes 10 are provided on the nozzle tube 7. Since they are provided in rows on the cylindrical surface of the nozzle tube 7 facing to the substrates 5, the reaction gas blown off from the nozzle tube 7 can be spread and supplied radiately about the nozzle tube 7 over the wide region within a horizontal surface.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62239607A JPH0670979B2 (en) | 1987-09-22 | 1987-09-22 | Vapor phase growth equipment |
US07/247,850 US4992301A (en) | 1987-09-22 | 1988-09-22 | Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness |
EP88115622A EP0308946B1 (en) | 1987-09-22 | 1988-09-22 | Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness |
DE88115622T DE3885833T2 (en) | 1987-09-22 | 1988-09-22 | Chemical vapor deposition apparatus for the production of high quality epitaxial layers with a uniform density. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62239607A JPH0670979B2 (en) | 1987-09-22 | 1987-09-22 | Vapor phase growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6481217A true JPS6481217A (en) | 1989-03-27 |
JPH0670979B2 JPH0670979B2 (en) | 1994-09-07 |
Family
ID=17047262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62239607A Expired - Fee Related JPH0670979B2 (en) | 1987-09-22 | 1987-09-22 | Vapor phase growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0670979B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62263629A (en) * | 1986-05-12 | 1987-11-16 | Hitachi Ltd | Vapor growth device |
-
1987
- 1987-09-22 JP JP62239607A patent/JPH0670979B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62263629A (en) * | 1986-05-12 | 1987-11-16 | Hitachi Ltd | Vapor growth device |
Also Published As
Publication number | Publication date |
---|---|
JPH0670979B2 (en) | 1994-09-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |