JPS6417423A - Semiconductor crystal growth device - Google Patents
Semiconductor crystal growth deviceInfo
- Publication number
- JPS6417423A JPS6417423A JP17322387A JP17322387A JPS6417423A JP S6417423 A JPS6417423 A JP S6417423A JP 17322387 A JP17322387 A JP 17322387A JP 17322387 A JP17322387 A JP 17322387A JP S6417423 A JPS6417423 A JP S6417423A
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- raw gas
- substrate
- semiconductor substrate
- vicinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C05—FERTILISERS; MANUFACTURE THEREOF
- C05F—ORGANIC FERTILISERS NOT COVERED BY SUBCLASSES C05B, C05C, e.g. FERTILISERS FROM WASTE OR REFUSE
- C05F17/00—Preparation of fertilisers characterised by biological or biochemical treatment steps, e.g. composting or fermentation
- C05F17/20—Preparation of fertilisers characterised by biological or biochemical treatment steps, e.g. composting or fermentation using specific microorganisms or substances, e.g. enzymes, for activating or stimulating the treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/141—Feedstock
- Y02P20/145—Feedstock the feedstock being materials of biological origin
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/40—Bio-organic fraction processing; Production of fertilisers from the organic fraction of waste or refuse
Abstract
PURPOSE:To supply an unreacted raw gas uniformly on the whole surface of a substrate, by supplying the raw gas from the lower side of a vertical type reaction tube and tapering the reaction tube in the vicinity of a substrate holder and also smoothly tapering the substrate holder. CONSTITUTION:A raw gas 108 is supplied in the form of a smooth layer flow from a lower side of a vertical type reaction tube 101. Then the reaction tube 101 is tapered in the vicinity of a holder 102 of a semiconductor substrate 104. The substrate holder 102 is also tapered more smoothly than the reaction tube 101. Hence the raw gas which touches the surface of the semiconductor substrate and finishes a chemical reaction to be heated, is moved quickly to an upward exhaustion system. A layer flow in the vicinity of the surface of the semiconductor substrate is not disturbed, and at the same time the tapered shapes of the reaction tube 101 and the substrate holder 102 permit an unreacted raw gas to be supplied uniformly to the whole surface of the semiconductor substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17322387A JPS6417423A (en) | 1987-07-10 | 1987-07-10 | Semiconductor crystal growth device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17322387A JPS6417423A (en) | 1987-07-10 | 1987-07-10 | Semiconductor crystal growth device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6417423A true JPS6417423A (en) | 1989-01-20 |
Family
ID=15956418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17322387A Pending JPS6417423A (en) | 1987-07-10 | 1987-07-10 | Semiconductor crystal growth device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6417423A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008021708A (en) * | 2006-07-11 | 2008-01-31 | Taiyo Nippon Sanso Corp | Vapor phase growing apparatus |
KR20210082927A (en) * | 2019-12-26 | 2021-07-06 | 주식회사 우진에프에이 | Wafer Heating Furnace |
-
1987
- 1987-07-10 JP JP17322387A patent/JPS6417423A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008021708A (en) * | 2006-07-11 | 2008-01-31 | Taiyo Nippon Sanso Corp | Vapor phase growing apparatus |
KR20210082927A (en) * | 2019-12-26 | 2021-07-06 | 주식회사 우진에프에이 | Wafer Heating Furnace |
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