JPS57187033A - Vapor phase chemical growth device - Google Patents

Vapor phase chemical growth device

Info

Publication number
JPS57187033A
JPS57187033A JP7093881A JP7093881A JPS57187033A JP S57187033 A JPS57187033 A JP S57187033A JP 7093881 A JP7093881 A JP 7093881A JP 7093881 A JP7093881 A JP 7093881A JP S57187033 A JPS57187033 A JP S57187033A
Authority
JP
Japan
Prior art keywords
reacting gas
nozzle
substrate
carrier gas
laminar flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7093881A
Other languages
Japanese (ja)
Other versions
JPS6140035B2 (en
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP7093881A priority Critical patent/JPS57187033A/en
Publication of JPS57187033A publication Critical patent/JPS57187033A/en
Publication of JPS6140035B2 publication Critical patent/JPS6140035B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps

Abstract

PURPOSE:To form a photo-CVD film efficiently by providing a nozzle for supplying a reacting gas on the surface of a substrate, transmitting sunlight to the parts other than the laminar flow of a reacting gas and providing a carrier gas nozzle. CONSTITUTION:A reacting gas supply nozzle 6 which supplies a reacting gas on the surface of a substrate 1 of an optical vapor phase chemical growth device is provided, and UV rays 5 are transmitted to parts other than the laminar flow of the reacting gas. Also, a carrier gas nozzle 17 which supplies a carrier gas lighter or heavier than the reacting gas in laminar flow is provided. In this way, the extremely thin gaseous layer is formed on the surface of the substrate, and the nonactive and light transmittable carrier gas layer is formed in other reaction tube, whereby the optical CVD film is formed efficiently.
JP7093881A 1981-05-12 1981-05-12 Vapor phase chemical growth device Granted JPS57187033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7093881A JPS57187033A (en) 1981-05-12 1981-05-12 Vapor phase chemical growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7093881A JPS57187033A (en) 1981-05-12 1981-05-12 Vapor phase chemical growth device

Publications (2)

Publication Number Publication Date
JPS57187033A true JPS57187033A (en) 1982-11-17
JPS6140035B2 JPS6140035B2 (en) 1986-09-06

Family

ID=13445941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7093881A Granted JPS57187033A (en) 1981-05-12 1981-05-12 Vapor phase chemical growth device

Country Status (1)

Country Link
JP (1) JPS57187033A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119336A (en) * 1982-01-08 1983-07-15 Ushio Inc Apparatus for vapor deposition by photochemical reaction
JPS59129771A (en) * 1983-01-18 1984-07-26 Ushio Inc Photochemical vapor deposition device
JPS6050168A (en) * 1983-08-29 1985-03-19 Yoshihiro Hamakawa Production of thin solid film by photo cvd method
JPS6050918A (en) * 1983-08-31 1985-03-22 Wakomu:Kk Semiconductor processor
JPS60167317A (en) * 1984-02-09 1985-08-30 Mitsubishi Electric Corp Optically excited chemical vapor deposition device
JPS60261129A (en) * 1984-06-07 1985-12-24 Teru Saamuko Kk Optical cvd device
JPS6179771A (en) * 1984-09-26 1986-04-23 Applied Material Japan Kk Method and device for vapor growth
JPS6193830A (en) * 1984-10-15 1986-05-12 Nec Corp Optical gaseous phase growing method
JPS61208213A (en) * 1985-03-12 1986-09-16 Tokyo Erekutoron Kk Photochemical vapor deposition apparatus
JPS6274079A (en) * 1985-09-27 1987-04-04 Applied Materials Japan Kk Vapor growth device
JPS6274078A (en) * 1985-09-27 1987-04-04 Applied Materials Japan Kk Vapor growth device
JPS6280271A (en) * 1985-10-02 1987-04-13 Applied Materials Japan Kk Vapor growth method
JPS6280272A (en) * 1985-10-02 1987-04-13 Applied Materials Japan Kk Vapor growth method
JPS62129060U (en) * 1986-02-10 1987-08-15
JPH04240987A (en) * 1991-01-25 1992-08-28 Matsushita Electric Ind Co Ltd Catv subscriber terminal equipment
JPH04122695U (en) * 1991-04-23 1992-11-04 四国化成工業株式会社 Solid disinfectant dissolving device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119336A (en) * 1982-01-08 1983-07-15 Ushio Inc Apparatus for vapor deposition by photochemical reaction
JPS59129771A (en) * 1983-01-18 1984-07-26 Ushio Inc Photochemical vapor deposition device
JPH0310711B2 (en) * 1983-01-18 1991-02-14 Ushio Electric Inc
JPS6050168A (en) * 1983-08-29 1985-03-19 Yoshihiro Hamakawa Production of thin solid film by photo cvd method
JPH0128830B2 (en) * 1983-08-29 1989-06-06 Yoshihiro Hamakawa
JPS6050918A (en) * 1983-08-31 1985-03-22 Wakomu:Kk Semiconductor processor
JPS60167317A (en) * 1984-02-09 1985-08-30 Mitsubishi Electric Corp Optically excited chemical vapor deposition device
JPS60261129A (en) * 1984-06-07 1985-12-24 Teru Saamuko Kk Optical cvd device
JPS6338430B2 (en) * 1984-09-26 1988-07-29 Applied Materials Japan
JPS6179771A (en) * 1984-09-26 1986-04-23 Applied Material Japan Kk Method and device for vapor growth
JPS6193830A (en) * 1984-10-15 1986-05-12 Nec Corp Optical gaseous phase growing method
JPS61208213A (en) * 1985-03-12 1986-09-16 Tokyo Erekutoron Kk Photochemical vapor deposition apparatus
JPS6274078A (en) * 1985-09-27 1987-04-04 Applied Materials Japan Kk Vapor growth device
JPS6274079A (en) * 1985-09-27 1987-04-04 Applied Materials Japan Kk Vapor growth device
JPS6280272A (en) * 1985-10-02 1987-04-13 Applied Materials Japan Kk Vapor growth method
JPS6280271A (en) * 1985-10-02 1987-04-13 Applied Materials Japan Kk Vapor growth method
JPS62129060U (en) * 1986-02-10 1987-08-15
JPH04240987A (en) * 1991-01-25 1992-08-28 Matsushita Electric Ind Co Ltd Catv subscriber terminal equipment
JPH04122695U (en) * 1991-04-23 1992-11-04 四国化成工業株式会社 Solid disinfectant dissolving device

Also Published As

Publication number Publication date
JPS6140035B2 (en) 1986-09-06

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