JPS6050918A - Semiconductor processor - Google Patents

Abstract

PURPOSE:To prevent the attachment and deposit of reacted product ono a transmission window for ultraviolet rays by providing a means of cooling the window. CONSTITUTION:One end of a cooling gas introduction pipe 12 is connected to a cooling device 23, and the other end i.e. a cooling gas supply port 12a is placed at the outer peripheral end of said window made of glass 5b. Besides, one end of a cooling gas exhaust pipe 13 is connected to a cooling gas absorbing device 22, and the outer end i.e. a cooling gas inhalant 13a is placed at the outer peripheral end of the window 5b. In this semiconductor processor, at the same time that the supply and exhaust of reaction gas, the precipitation of reacted product on a wafer 1 and the like are performed, a cooling gas supplying device 21 emits cooling gas from the supply port 12a. This cooling gas is sucked into the inhalant 13a after flowing along the surface of the window 5b along the cooling gas flow line 16. Thereby, the window 5b is cooled by the cooling gas, resulting in the prevention of the attachment and deposit of reacted product onto the window 5b; accordingly a thin film can be vapor deposited on the surface of the wafer 1 with good efficiency.

Description

[Detailed Description of the Invention] (Field of Application) The present invention relates to a semiconductor processing device, and more particularly to a semiconductor processing device for forming a thin film on a wafer using a chemical vapor deposition method using a photochemical reaction. .

(Prior art) Wafers for manufacturing ICs, LSIs, etc.
PVD (1'hysics, J Vapor Dap
position ) or CVD (Ch+!+n1
A vaporization process called ca/Vapor Depo8ition) is performed.

During the vapor deposition process, the wafer is heated to a height of 9. ! 5
It is necessary to heat the nitrogen with a heat source, but if ultraviolet irradiation is performed in addition to the heating operation, the heating temperature can be lowered by 1
' can be done.

This J:9 chemical vapor deposition method, which utilizes wafer heating and photochemical 15ζ reaction using violet 1-ray irradiation, is relatively simple to construct the equipment and can lower the processing temperature. It has been widely put into practical use.

A conventional example will be briefly described below with reference to the drawings.

FIG. 1 is a sectional view showing a schematic groove structure of a conventional example.

The heat-resistant light-transmitting container 4g and the container lid 4b are gaskets) 4
They are connected by means not shown through c.

Several susceptor supports 3 are suspended from the container lid 4b. The susceptor 2 is locked to the lower end of each of the susceptor supports 3 so as to be located below the heat-resistant and transparent container 4a.

The wafer 1 is placed on the upper surface of the susceptor 2.

One end of the reaction gas introduction pipe 14 is connected to the reaction gas supply device 19.
The other end, ie, the reaction gas supply port 14a, is inserted into the heat-resistant and light-transmitting container 4a through a small hole provided in the container lid 4b.

Further, one end of the reaction gas discharge pipe 15 is connected to a vacuum pump 20.
and the other end, that is, the reaction gas inlet 15a.
is inserted into the heat-resistant and light-transmitting container 4a through a small hole provided in the container lid 4b. .

The reaction gas supply port 14g and the reaction gas inlet 15a
are installed near the surface of the wafer 1 and facing each other outside the side surface of the wafer 1.

A plurality of infrared recording lamps 6 are installed closely facing each other on the side and bottom surfaces of the heat-resistant and light-transmitting container 4a.

1) At the center of the container lid 4b in item 11, an ultraviolet ray transmitting glass window 5b serving as a light irradiation window is fixed onto the container ti 4 b by means not shown through a gasket 4c. A light irradiation lens system 7 is installed above the ultraviolet-transmitting glass window 5b by means not shown.

The installation of the itt irradiation lens system 7 means that when the ultraviolet rays 10 are incident on the light irradiation lens system 7, the heat-resistant light-transmitting volume f! The wafer 1 in S4a is properly irradiated with ultraviolet rays. In the conventional example using the above-mentioned storage, first, the vacuum pump 20 is driven to bring the inside of the heat-resistant and light-transmitting container 4a into a high vacuum state. At the same time, the birch line rung 6 is turned on to heat the wafer 1 housed in the heat-resistant and translucent container 4a to a predetermined temperature. .

Next, the reaction gas supply device 19 is driven, and the reaction gas P (reaction gas is ejected from the supply port 14a. The reaction gas is
A silane gas or the like that is activated by ultraviolet light is used.

After the reaction gas flows on the bottom surface of the wafer 1 along the reaction gas flow line 17, by driving the vacuum pump 20,
The reaction gas is sucked into the reaction gas inlet 15a.

In this state, ultraviolet rays 10 are irradiated from the light irradiation lens system 7 onto the wafer /-11 housed in the heat-resistant and light-transmitting container 4a.

Through the above-described operation, the reaction products obtained by the chemical reaction of the reaction gas are deposited on the surface of the wetted sheet 1 heated at a certain predetermined temperature, thereby causing the thin film to be deposited. Complete.

However, in the conventional example, the reaction gas supply ports 14a x, jl
The ejected reaction gas flows on the surface of the wafer 711 and at the same time diffuses throughout the inside of the container, so some of it is
The reaction gas is not sucked into the reaction gas inlet 15a and remains in the heat-resistant and light-transmitting container 4a.

The heat-resistant and light-transmitting container 4a is irradiated with ultraviolet 1Pi110 from the reaction gas remaining in the heat-resistant and light-transmitting container 4a, and at the same time is heated to the critical photochemical reaction temperature or higher by an infrared lamp or other means. The reaction product is deposited on the inner surface of the susceptor 2 or the inner surface of the ultraviolet-transmitting glass window 5b.

The reaction product deposited on the inner surface of the ultraviolet-transmitting glass window 5b prevents the ultraviolet rays 10 from passing through, thereby reducing the amount of ultraviolet irradiation to the wafer 1.

Therefore, in the conventional example, the rate of separation and deposition by ultraviolet rays on the way I-1 is slow, the utilization rate of the reaction gas is poor, and furthermore, it is difficult to form a reaction product film of a certain thickness or more in one step. The drawback was that there were even cases where it was impossible to do so.

(Purpose) The present invention has been made to eliminate the above-mentioned drawbacks, and its purpose is to prevent the adhesion and deposition of reaction products on ultraviolet-transmitting glass windows, and to utilize chemical vapor deposition methods using photochemical reactions. The object of the present invention is to provide a semiconductor processing method that can achieve the formation of a thin film with practical efficiency.

(Overview) In order to achieve the above object, the present invention provides a sealable heat-resistant reaction vessel having an ultraviolet-transmitting window in a part thereof and a means for holding a wafer to be processed therein; means for heating the wafer to be treated to a predetermined temperature σ); a light irradiation lens system for irradiating the wafer/% to be treated through the ultraviolet-transmitting window; and a reaction gas introduction system provided through the reaction vessel in an airtight manner. The present invention is characterized in that it is provided with a pipe, a reactant gas exhaust/vib, and a means for cooling the ultraviolet light transmitting window.

(Example) The present invention will be described in detail below with reference to the drawings.

FIG. 2 is a sectional view showing a schematic configuration of the first embodiment of the present invention.

In FIG. 2, the same reference numerals as in FIG. 1 represent the same or equivalent parts and have the same functions as described above.

In FIG. 2, one end of the cooling gas inlet (eve 12) is
It is connected to the cooling device 23, and the other end, that is, the cooling gas supply port 122L, is installed at the outer peripheral end of the ultraviolet-transmitting glass window 5b. The cooling device 23 is connected to [21] after the cooling gas is supplied.

Still, one end of the cooling gas exhaust pipe 13 is not absorbing the cooling gas.
The other end, that is, the cooling gas inlet 13a, is installed at the outer peripheral end of the ultraviolet-transmitting glass window 5b so as to face the cooling gas supply port 12a.

In the first embodiment of the present invention having the above-described configuration, the supply of reaction gas, evacuation, precipitation of the reaction product on the way/.1, etc. are performed in the same manner as in the case of FIG.

At the same time, the cooling gas supply device 21 cools the cooling gas by passing it through the cooling device 23, passes it through the cooling gas introduction pipe 12, and causes it to be ejected from the cooling gas supply port 12a. The cooling gas flows through the interface of the ultraviolet-transmitting glass window 5b along the cooling gas flow line 16, and then is sucked into the cooling gas inlet 13a by the driving of the cooling gas absorption device 22.

As a result, the ultraviolet-transmitting glass window 5b is cooled by the cooling gas. Note that in this case, the cooling gas 2j may be any type of gas.

In the second case, in the container, the reaction gas that is not sucked in by the reaction gas inlet 15m and remains in the heat-resistant and transparent container 4a is irradiated with ultraviolet rays 10 and comes into contact with the ultraviolet-transparent glass window 5b. Since the ultraviolet-transmitting glass window 5b is cooled by the cooling gas to a temperature below which reaction products do not precipitate, reaction products do not precipitate on the ultraviolet-transmitting glass window 5b.

FIG. 3 is a cross-sectional view showing a schematic configuration of a second embodiment of the present invention. In FIG. 3, the same reference numerals as in FIGS. 1 and 2 refer to
The same or equivalent parts are hailed.

Second Embodiment L1 of the Present Invention As is clear from the comparison with FIG. 2, the cooling gas supply port 12 in the first embodiment
a and cooling gas inlet 13af, heat-resistant and translucent container 4
It is provided inside a.

That is, two small holes are provided in the container M4b, and the cooling gas introduction pipe 12 and the cooling gas discharge pipe 13 are inserted into the heat-resistant and transparent container 4a through the respective small holes, and the cooling gas supply port 12a and the cooling gas inlet port are inserted. 13a are installed opposite to each other at the outer circumferential end of the ultraviolet-transmitting glass window 5b. The cooling gas exhaust pipe 13 is connected to the reaction gas exhaust pipe 1 at the other end of the cooling gas inlet 13a.
Similar to 5, it is connected to the empty pump 20.

The other end of the cooling gas supply port 12 a of the cooling gas introduction pipe 12 is connected to a cooling device 23 .

In the second embodiment, the device connected to the cooling device 23 depends on the type of gas used for the cooling gas.
It is conceivable to use Class I gases.

fJl is the case where the same reaction gas as that used for thin film deposition in wave 1 is used. In this case, the cooling device 23 is connected to the reaction gas supply device 19.

The second is nitrogen, argon or other inert gas,
Alternatively, a mixture of these gases may be used. In this case, the cooling device 23 is connected to the cooling gas supply device 21. As shown in FIG. 3, the cooling gas supply device [12
1 is indicated by a two-dot chain line.

In either case, the cooling gas supplied to the inner surface of the ultraviolet-transmitting glass window 5b is controlled by the cooling device 23.
It is cooled to a temperature below which reaction products do not precipitate even when irradiated with ultraviolet rays.

Furthermore, since the surface of the ultraviolet-transmitting glass window 5b that is intended to prevent precipitation of reaction products is directly cooled, the effect of preventing precipitation of reactants is higher than in the first embodiment.

In the second embodiment as well, the cooling gas ejected from the cooling gas supply port 12a has a diffusion effect, similar to the reaction gas for thin film deposition on the wafer 1, so that all of the cooling gas flows into the cooling gas inlet 13a. It does not necessarily mean that it will be attracted.

However, when using the same reaction gas as that used for thin film deposition on the wafer 1 as the cooling gas, there is no need to mix impurities into the reaction gas diffused into the heat-resistant and transparent container 4a. Thin films can always be deposited satisfactorily on wafers.

When an inert gas is used as the cooling gas, some of the inert gas remains in the heat-resistant and transparent container 4a and is mixed with the reaction gas for evaporating the wafer 1. It is necessary to make some adjustments in advance to make the ingredients slightly darker.

FIG. 4 is a sectional view showing a schematic configuration of a third embodiment of the present invention.

In FIG. 4, the same reference numerals as in FIGS. 1 to 3 represent the same or equivalent parts.

A third embodiment of the present invention is a second embodiment of the present invention shown in FIG.
The relative positional relationship between the heat-resistant and light-transmitting container 4a and the container lid 4b of the embodiment is reversed upside down.

In this example, in order to prevent the wafer 1 from falling from the susceptor 2, the wafer 1 is secured to the susceptor 2 by means not shown.
is fixed to.

The wafer is heated to 1 ton using 60 infrared bonding lamps.
Additionally, the reaction gas introduced into the heat-resistant and light-transmitting container 4R is also heated. Naturally, the heated reaction gas will collect above the heat-resistant transparent vessel 4a.

In the third embodiment, by providing an ultraviolet-transmitting window 5b through which the ultraviolet rays 10 can be irradiated at the lower part of the heat-resistant and translucent container 4a, that is, at the lower part of the wafer 1, This is intended to reduce the amount of contact of the heated reaction gas with the ultraviolet n-transmissive glass window 5b, and to more effectively suppress the precipitation of reaction products on the surface of the ultraviolet-transparent glass window 5b.

Therefore, according to the third embodiment, in which the ultraviolet-transmitting glass window 5b is provided at the lower part of the semiconductor processing apparatus and the operation of the second embodiment is performed, compared to the second embodiment,
Replacing the ultraviolet-transmitting glass window 5b or removing reaction products, the recycle time is extended, and the operating rate and economic efficiency are increased.

Although the third embodiment has been described as a modification of the second embodiment, it goes without saying that it can also be applied as a modification of the first embodiment. That is, the cooling gas may be made to flow along the outer surface of the ultraviolet-transmitting window 5b.

As described above, in the first to third embodiments, the infrared lamp 6 installed outside the heat-resistant and transparent container 4a was used as the heating means for the wafer 1. However, the present invention is not limited to this, and heating may be performed using a resistor such as a nichrome helix, or heating may be performed using a coil and a vortex 'rlX, a flow generated by electromagnetic induction of C1 alternating current. Of course. In these cases, the container for the semiconductor processing equipment only needs to have heat resistance, and does not need to have the above-mentioned light transmittance. In addition to being installed outside the container, the heating means can also be installed inside the container, or -
It is also possible to incorporate it inside the receptor.

(Effects) As is clear from the above description, according to the present invention, the following effects can be achieved. 1 (1) By completely cooling the ultraviolet-transmitting glass window by flowing a cooled cooling gas to its inner/outer surface, it is possible to prevent reaction products from adhering to the horn glass window, and furthermore, to prevent the reaction products from adhering to the wafer. By providing the cooling effect at a lower position, it is possible to more completely prevent the reaction products from adhering to each other.

Therefore, the utilization rate of ultraviolet rays and reactive gas can be increased, and thin film deposition on the wafer surface can be performed efficiently. Furthermore, the frequency of maintenance such as replacement and cleaning of the ultraviolet-transmitting glass window can be reduced, so the operating rate of the device can be improved.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing a schematic configuration of a conventional semiconductor processing apparatus, FIG. 2 is a sectional view showing a schematic configuration of a first embodiment of the present invention, and FIG. 3 is a sectional view of a second embodiment of the present invention. FIG. 4 is a sectional view showing the schematic structure of a third embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Susceptor, 4a... Heat-resistant light-transmitting container, 4b River container lid, 5b... Ultraviolet-transmitting glass window, 6... Infrared lamp, 7... Light irradiation lens System, lO...Ultraviolet FA, 12...Cooling gas introduction pipe, 13...Cooling gas discharge pipe, 14...Reaction gaff introduction pipe, 15...Reaction gas discharge pipe, 16...
・Cooled scum b11; Line, 17... Reaction scum streamline, 19
...Reaction gas supply device, 2o...tG2 bong, 2
1...Cooling gaff, supply device, 22...Cooling gas suction device, 23...Cooling device attorney Michihito Hiraki and 1 other personFigure 1Figure 2Figure 73, 21

Claims (5)

[Claims] (1) A heat-resistant reaction container configured to be sealed, a means for holding a wafer to be processed in the container, and an ultraviolet transmitting window hermetically fixed to a part of the wall of the reaction container. , a means for heating the wafer to be processed to a predetermined temperature, a light irradiation lens system for irradiating the processing chamber with ultraviolet rays through the ultraviolet ray transmission window, and a light irradiation lens system provided to airtightly penetrate the reaction vessel. 1. A semiconductor processing apparatus comprising a reactive gas introduction pipe and a reactive gas discharge pipe, further comprising means for cooling an ultraviolet light transmitting window. (2) The means for cooling the ultraviolet ray transmitting window is a means for flowing cooling gas along the outer surface of the ultraviolet ray transmitting window.
The semiconductor processing apparatus according to claim 1, wherein the semiconductor processing apparatus has the following characteristics. (3) A patented semiconductor processing apparatus characterized in that the means for cooling the ultraviolet ray transmission window is a means for flowing cooling gas along the inner surface of the ultraviolet ray transmission window; (4) The components of the cooling gas are almost the same as those of the reaction gas.
4. The semiconductor processing apparatus according to claim 3, wherein: (5) The semiconductor processing apparatus according to any one of the preceding claims, wherein the ultraviolet-transmitting window is also provided below the means for holding the sum processing wafer.