JPH0758016A - Film-forming processor - Google Patents
Film-forming processorInfo
- Publication number
- JPH0758016A JPH0758016A JP5225211A JP22521193A JPH0758016A JP H0758016 A JPH0758016 A JP H0758016A JP 5225211 A JP5225211 A JP 5225211A JP 22521193 A JP22521193 A JP 22521193A JP H0758016 A JPH0758016 A JP H0758016A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- processed
- peripheral edge
- film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、成膜処理装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus.
【０００２】[0002]
【従来の技術】半導体製造工程では、シリコンなどの半
導体ウエハ（以下単にウエハという。）の表面に集積回
路を形成する目的で例えばＣＶＤ（Ｃｈｅｍｉｃａｌ
Ｖａｐｏｒ ｄｅｐｏｓｉｔｉｏｎ）装置を用いて成膜
工程（薄膜の形成工程）が行われている。2. Description of the Related Art In a semiconductor manufacturing process, for example, CVD (Chemical) is used for the purpose of forming an integrated circuit on the surface of a semiconductor wafer such as silicon (hereinafter simply referred to as a wafer).
A film forming process (thin film forming process) is performed using a vapor deposition apparatus.
【０００３】ところでこうした成膜工程において、ウエ
ハの周縁部や裏面に対して成膜を避けなければならない
場合がある。例えば微細コンタクトホール内にＷ（タン
グステン）を埋め込むためにＷＦ6 ガスなどの成膜ガス
を用いてウエハの表面に対してＣＶＤ処理を行う場合、
ウエハの周縁部や裏面にはＳｉＯ2 が形成されているの
で、ＳｉＯ2 膜上にＷ膜が生成されないようにすること
が必要である。何故ならＷ膜はＳｉＯ2 との密着性が悪
くて剥れやすいので、ＳｉＯ2 膜にＷ膜が付着すると、
Ｗ膜が剥れてパーティクルとして飛散し、ウエハの汚染
につながるからである。By the way, in such a film forming process, it may be necessary to avoid forming a film on the peripheral portion or the back surface of the wafer. For example, when performing a CVD process on the surface of a wafer using a film forming gas such as WF 6 gas in order to fill W (tungsten) in a fine contact hole,
Since SiO 2 is formed on the peripheral portion and the back surface of the wafer, it is necessary to prevent the W film from being formed on the SiO 2 film. Because the W film has poor adhesion with SiO 2 and is easily peeled off, if the W film adheres to the SiO 2 film,
This is because the W film peels off and scatters as particles, which leads to contamination of the wafer.
【０００４】そこで例えばウエハの表面にＣＶＤ処理に
よりＷ膜を形成するためには、従来図５に示すように処
理室の中央に配置されたウエハ載置台１０の周りに、上
方に向かってパージガス例えばＮ2 ガスを吹き出させる
ようにガス流路１２を形成する一方、このガス流路１２
から吹き出されたパージガスがウエハの周縁部からウエ
ハの内方側に向かいつつ上方に抜けていくように、断面
形状がＬ字形のリング状のガイド枠１３によりウエハの
周縁部を取り囲むようにしている。Therefore, for example, in order to form a W film on the surface of a wafer by a CVD process, a purge gas, for example, a purge gas is provided upwardly around a wafer mounting table 10 arranged in the center of a processing chamber as shown in FIG. The gas flow passage 12 is formed so as to blow out N 2 gas, while the gas flow passage 12 is formed.
The peripheral edge of the wafer is surrounded by the ring-shaped guide frame 13 having an L-shaped cross section so that the purge gas blown out from the peripheral edge of the wafer escapes upward toward the inner side of the wafer. .
【０００５】また他の例としては、図６に示すようにウ
エハ載置台１０のウエハ周縁部及びウエハ載置台１０の
表面に密接するリング状の押え部材１４を設けると共
に、この押え部材１４の底面に向けてパージガスを吹き
付けるようにウエハ載置台１０の周りにガス流路１５を
形成している。As another example, as shown in FIG. 6, a ring-shaped pressing member 14 that is in close contact with the wafer peripheral portion of the wafer mounting table 10 and the surface of the wafer mounting table 10 is provided, and the bottom surface of the pressing member 14 is provided. A gas flow path 15 is formed around the wafer mounting table 10 so that the purge gas is blown toward it.
【０００６】このような装置によれば、ウエハ載置台１
０に内蔵されているヒータ１１によりウエハを加熱し、
成膜ガス例えばＷＦ6 ガスを処理室の上部からウエハに
向けて導入すると共に、例えば処理室の側部にて排気を
行うことによってウエハ表面にＷ膜が成膜される。そし
て図５の装置では、パージガスの矢印の如くウエハの周
縁部からその内方側上部に向けて流れるので、成膜ガス
のウエハの周縁部への周り込みが阻止され、この結果ウ
エハの周縁部や裏面に対するＷ膜の付着が防止される。According to such an apparatus, the wafer mounting table 1
The wafer is heated by the heater 11 built in 0,
A W film is formed on the surface of the wafer by introducing a film forming gas such as WF 6 gas from the upper part of the processing chamber toward the wafer and exhausting gas from the side of the processing chamber. In the apparatus shown in FIG. 5, the purge gas flows from the peripheral edge of the wafer toward the upper portion on the inner side thereof as shown by the arrow, so that the film forming gas is prevented from flowing into the peripheral edge of the wafer, and as a result, the peripheral edge of the wafer is prevented. The W film is prevented from adhering to the back surface.
【０００７】また図６の装置では、押え部材１４により
ウエハの周縁部がマスクされている上、当該押え部材１
４の下面に吹き付けられたパージガスの一部が押え部材
１４と、ウエハ載置台１０及びウエハとの間の隙間を通
って矢印の如くウエハの周縁部からその内方側に向かっ
て流れるので、成膜ガスのウエハの周縁部への周り込み
が阻止される。In the apparatus shown in FIG. 6, the peripheral edge of the wafer is masked by the pressing member 14, and the pressing member 1
Since a part of the purge gas blown to the lower surface of No. 4 flows through the gap between the holding member 14 and the wafer mounting table 10 and the wafer from the peripheral edge of the wafer toward the inner side thereof as indicated by the arrow. The film gas is prevented from entering the peripheral portion of the wafer.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら図５及び
図６に示す方法では、パージガスがウエハの周縁部から
中心部に向かって流れるため、ウエハの表面における成
膜ガスの流れがウエハの周縁部に近い部分と中心部との
間で異なってしまい、この結果膜厚の均一性が悪くなる
し、またウエハの裏面側でパーティクルが発生すると、
このパーティクルがパージガスによりウエハの表面に運
ばれて付着しやすくなるという問題がある。However, in the method shown in FIGS. 5 and 6, since the purge gas flows from the peripheral portion of the wafer toward the central portion, the flow of the film forming gas on the surface of the wafer reaches the peripheral portion of the wafer. There is a difference between the near portion and the central portion, resulting in poor uniformity of the film thickness, and when particles are generated on the back surface side of the wafer,
There is a problem that the particles are easily transported to the surface of the wafer by the purge gas and adhere to the surface.
【０００９】そこで本発明者らは、このような問題を解
決するために、処理室の下方側に、ウエハを支持するた
めに支持枠が外壁面に設けられた排気室を配設すると共
に、支持枠上にウエハを載置し、ウエハの被処理面上に
この被処理面の周縁部を覆うリング体を、このリング体
の外周縁部がウエハの外方側へ突出するように設けた成
膜装置について検討を行っている。In order to solve such a problem, the inventors of the present invention provide an exhaust chamber having a support frame on the outer wall surface for supporting the wafer on the lower side of the processing chamber. A wafer is placed on a support frame, and a ring body is provided on the surface to be processed of the wafer to cover the peripheral portion of the surface so that the outer peripheral edge portion of the ring body projects to the outside of the wafer. We are studying a film-forming device.
【００１０】このような成膜装置では、リング体と排気
室との間の隙間がパージガスの流路を成し、ウエハの被
処理面の裏面側からリング体の突出部分へ向けてパージ
ガス供給管によりパージガスを供給すると、このパージ
ガスのほぼ全部がウエハの被処理面の外方側を通過して
排気される。従ってこのパージガスの通流によりウエハ
の被処理面に供給される処理ガスの被処理面の周縁部や
裏面への周り込みが阻止されて、この部分への成膜が防
止される。またパージガスの通流は処理ガスの被処理面
に対する均一な流れを妨げるものではないので、面内に
おける成膜は均一に行われる。In such a film forming apparatus, the gap between the ring body and the exhaust chamber forms a flow path for the purge gas, and the purge gas supply pipe extends from the back surface side of the surface to be processed of the wafer toward the protruding portion of the ring body. When the purge gas is supplied by the method, almost all of the purge gas passes through the outside of the surface to be processed of the wafer and is exhausted. Therefore, the flow of the purge gas prevents the processing gas supplied to the surface to be processed of the wafer from wrapping around the peripheral surface and the back surface of the surface to be processed, thereby preventing film formation on this portion. Further, since the flow of the purge gas does not hinder the uniform flow of the processing gas to the surface to be processed, the in-plane film formation is performed uniformly.
【００１１】しかしながら上述の成膜装置では、ウエハ
の成膜処理を行う際、ウエハの被処理面と共にリング体
の外表面も成膜されるが、リング体の外表面からウエハ
の被処理面に亘って連続して薄膜が形成されるため、成
膜処理後、リング体を上下機構により上昇させてウエハ
から取り外すときに、リング体の外表面及びウエハの被
処理面上に連続して形成された薄膜が切断され、このと
きこの切断箇所付近の薄膜が剥れて、パーティクルを発
生させるという問題があった。However, in the film forming apparatus described above, when the film forming process is performed on the wafer, the outer surface of the ring body is formed together with the surface to be processed of the wafer. However, from the outer surface of the ring body to the surface to be processed of the wafer. Since a thin film is continuously formed over the film, when the ring body is lifted by the up-and-down mechanism and removed from the wafer after the film forming process, the thin film is continuously formed on the outer surface of the ring body and the surface to be processed of the wafer. Another problem is that the thin film is cut, and at this time, the thin film near the cut portion is peeled off to generate particles.
【００１２】本発明は、このような事情の下になされた
ものであり、その目的は、パーティクルの発生を抑える
と共に、被処理体の被処理面の裏面及び周縁部への成膜
をパージガスにより防止することができ、しかも被処理
体の被処理面の成膜に対して悪影響を与えるパージガス
の被処理面への周り込みを回避することができる成膜処
理装置を提供することにある。The present invention has been made under such circumstances, and an object thereof is to suppress the generation of particles and to form a film on the back surface and the peripheral portion of the surface to be processed of the object to be processed by the purge gas. It is an object of the present invention to provide a film formation processing apparatus that can prevent the above-described problem and that can prevent a purge gas from adversely affecting the surface to be processed of the object to be processed from entering the surface to be processed.
【００１３】[0013]
【課題を解決するための手段】被処理体の被処理面の周
縁部を覆うために当該被処理面に対して接離自在に設け
られると共に、前記被処理面を押えるための押え面が形
成されたリング体を備え、前記被処理面に処理ガスを供
給して薄膜を形成する一方被処理面の裏面側からパージ
ガスを供給する成膜処理装置において、前記リング体
は、前記被処理面の周縁部を覆うときに外周縁部が被処
理体の外方側に突出するように形成され、少くともリン
グ体の内周縁部の裏面は、薄膜が潜り込まない程度の微
少な隙間が被処理体の被処理面との間に形成されるよう
に、前記押え面よりも高く形成されていることを特徴と
する。SOLUTION: The object to be processed is provided so as to come into contact with and separate from the surface to be processed so as to cover a peripheral portion of the surface to be processed, and a pressing surface for pressing the surface to be processed is formed. In the film-forming processing apparatus, which comprises a ring body provided with the processed gas, supplies a processing gas to the surface to be processed to form a thin film, and supplies a purge gas from the back surface side of the surface to be processed, The outer peripheral edge portion is formed so as to project to the outer side of the object to be processed when covering the peripheral edge portion, and at least the back surface of the inner peripheral edge portion of the ring body has a minute gap to the extent that the thin film does not penetrate. It is formed to be higher than the pressing surface so as to be formed between the surface to be processed and.
【００１４】[0014]
【作用】被処理体の被処理面の周縁部を覆うリング体
を、その内周縁部の裏面を、当該周縁部と被処理体の被
処理面との間に微少な隙間が形成されるように、被処理
体を押さえる押さえ面よりも高く形成し、このリング体
をリング体の外周縁部が被処理体の外方側へ突出するよ
うに配設する。これにより成膜処理の際、薄膜がリング
体から被処理面の表面に亘って連続して形成されること
がなく、このためリング体を被処理面から取り外すとき
に薄膜が切断されることがないのでパ−ティクルの発生
が抑えられる。また被処理体の被処理面の裏面側からリ
ング体の突出部分へ向けてパ−ジガスを供給すると、こ
のパ−ジガスのほぼ全部が被処理体の外方側を通過して
排気される。従ってこのパ−ジガスの通流により被処理
体に供給される処理ガスの被処理体の周縁部や裏面への
周り込みが阻止されて、この部分への成膜が防止され
る。なおパ−ジガスの通流は、処理ガスの被処理面に対
する均一な流れを妨げるものではないので、面内に置け
る成膜は均一に行われる。With the ring body covering the peripheral portion of the surface to be processed of the object to be processed, a back surface of the inner peripheral edge portion is formed so that a minute gap is formed between the peripheral edge portion and the surface to be processed of the object to be processed. Further, it is formed higher than the pressing surface for pressing the object to be processed, and the ring body is arranged so that the outer peripheral edge portion of the ring body projects to the outside of the object to be processed. As a result, during the film forming process, the thin film is not continuously formed from the ring body to the surface of the processed surface, and therefore the thin film may be cut when the ring body is removed from the processed surface. Since there is no particle, generation of particles can be suppressed. When the purge gas is supplied from the rear surface side of the surface to be processed of the object to be processed toward the protruding portion of the ring body, almost all of the page gas passes through the outer side of the object to be processed and is exhausted. Therefore, the flow of the purge gas prevents the processing gas supplied to the object from flowing into the peripheral portion and the back surface of the object to be processed, thereby preventing film formation on this portion. Since the flow of the purge gas does not hinder the uniform flow of the processing gas with respect to the surface to be processed, the film formation can be performed uniformly within the surface.
【００１５】[0015]
【実施例】以下本発明の実施例について説明する。図１
は本発明の成膜処理装置の一例を示す図であり、図中２
は被処理体例えばウエハＳに成膜処理を行うための気密
にシールされた処理室である。この処理室２の頂部に
は、例えば成膜ガスであるＷＦ6 ガス及びキャリアガス
であるＮ2 ガス、Ｈ2 ガスなどからなる処理ガスを供給
するための処理ガス供給管３１が連結されており、その
下端側にはガス導入室３２が形成されている。またガス
導入室３２の下面側には、処理ガスを処理室２内に例え
ばシャワー状に供給するためのガス拡散板３３が設けら
れている。EXAMPLES Examples of the present invention will be described below. Figure 1
FIG. 2 is a diagram showing an example of a film forming processing apparatus of the present invention.
Is a hermetically sealed processing chamber for performing a film forming process on an object to be processed, for example, the wafer S. A processing gas supply pipe 31 for supplying a processing gas composed of, for example, WF 6 gas as a film forming gas and N 2 gas or H 2 gas as a carrier gas is connected to the top of the processing chamber 2. A gas introduction chamber 32 is formed on the lower end side thereof. A gas diffusion plate 33 for supplying the processing gas into the processing chamber 2 in a shower shape, for example, is provided on the lower surface side of the gas introduction chamber 32.
【００１６】処理室２内のガス導入室３２の下方側に
は、ウエハを支持するための載置台４１が載置台支持枠
４２を介して側壁２１に設けられており、さらに処理室
２内には、載置台４１に載置されたウエハの表面（薄膜
形成面）の周縁部を覆うために、ウエハの表面に対して
接離自在に、例えばウエハの表面を覆う位置とその上方
位置との間で上下するように、リング体５が上下機構４
４を介して支持体４５に取り付けられている。Below the gas introducing chamber 32 in the processing chamber 2, a mounting table 41 for supporting the wafer is provided on the side wall 21 via a mounting table supporting frame 42, and further inside the processing chamber 2. In order to cover the peripheral edge of the surface (thin film forming surface) of the wafer placed on the mounting table 41, for example, between the position that covers the surface of the wafer and the position above it so that the surface of the wafer can be freely moved. The ring body 5 moves up and down so that it moves up and down between them.
It is attached to the support body 45 via 4.
【００１７】ここでリング体５は、図２及び図３に示す
ように、ウエハの周縁部全体を覆うように形成された環
状体の押えリング部５１と、押えリング部５１の裏面側
の例えば６ヶ所に、周方向に間隔を開けて設けられた例
えば四角形状の接触部５２とから構成されている。押え
リング部５１はウエハの表面の周縁部を覆うときには、
その外周縁部がウエハの外方側へ突出し、内周縁部がウ
エハの成膜処理を行う部分を覆わないように、例えばウ
エハとの重なり部分Ａが約４〜６ｍｍ、突出部分Ｂが約
２０〜３０ｍｍとなるように構成されている。As shown in FIGS. 2 and 3, the ring body 5 is a ring-shaped pressing ring portion 51 formed so as to cover the entire periphery of the wafer, and, for example, on the back surface side of the pressing ring portion 51. For example, it is composed of, for example, rectangular contact portions 52 provided at intervals in the circumferential direction at six positions. When the pressing ring portion 51 covers the peripheral portion of the surface of the wafer,
For example, the overlapping portion A with the wafer is about 4 to 6 mm, and the protruding portion B is about 20 so that the outer peripheral edge portion projects outward from the wafer and the inner peripheral edge portion does not cover the portion where the film forming process of the wafer is performed. It is configured to be about 30 mm.
【００１８】また接触部５２はその下面がウエハの周縁
部を押圧する押え面５３として形成され、また押えリン
グ部５１の裏面とウエハの表面との間に均一に隙間を形
成するように設けられている。The lower surface of the contact portion 52 is formed as a pressing surface 53 for pressing the peripheral portion of the wafer, and the contact portion 52 is provided so as to form a uniform gap between the rear surface of the pressing ring portion 51 and the front surface of the wafer. ing.
【００１９】この隙間は、あまり広いと（接触部５２の
高さが大きいと）ウエハの成膜処理時に処理ガスが当該
隙間の奥まで潜り込み、これにより接触部５２とウエハ
表面との間で連続して成膜されてしまうし、更にまたパ
ージガスがウエハの表面へ周り込んでしまう。これに対
して前記隙間が狭過ぎると押えリング部５１の内端面側
に形成された膜とウエハ側に形成された膜とが途切れず
に連続してしまうため、接触部５２の高さは両者の兼ね
合いで決定することが必要である。更にまた接触部５２
を内側に寄せ過ぎると接触部５２の内端面に膜が付着し
てウエハ側の膜と連続してしまうし、当該内端面を外側
に寄せ過ぎると押圧面積が小さくなってウエハに対する
押圧力が小さくなってしまう。そこでこうした点を考慮
して各寸法を設定することが重要であり、この実施例で
は、押えリング部５１から接触部５２の内周縁部までの
距離Ｃが例えば２〜４ｍｍ、ウエハの周縁と押え面５３
との接触部分が例えば２ｍｍ、接触部５２の高さＩが例
えば１０μｍ〜２００μｍに設定される。If this gap is too wide (when the height of the contact portion 52 is large), the processing gas penetrates deep into the gap during the film forming process of the wafer, whereby the contact portion 52 and the wafer surface continue. As a result, a film is formed, and the purge gas further enters the surface of the wafer. On the other hand, if the gap is too narrow, the film formed on the inner end surface side of the pressing ring portion 51 and the film formed on the wafer side are continuous without interruption, so that the height of the contact portion 52 is It is necessary to decide based on the balance of Furthermore, the contact portion 52
If the inner end surface is too close to the inside, the film adheres to the inner end surface of the contact portion 52 and is continuous with the film on the wafer side. If the inner end surface is too close to the outside, the pressing area becomes small and the pressing force against the wafer becomes small. turn into. Therefore, it is important to set the respective dimensions in consideration of these points. In this embodiment, the distance C from the pressing ring portion 51 to the inner peripheral edge of the contact portion 52 is, for example, 2 to 4 mm, and the peripheral edge of the wafer is pressed. Face 53
For example, the contact portion with is set to 2 mm, and the height I of the contact portion 52 is set to, for example, 10 μm to 200 μm.
【００２０】前記上下機構４４は、例えば図２に示すよ
うに、支持プレ−ト４６に螺合したボ−ルネジ４７を、
モ−タ４８により伝達機構４９を介して駆動し、これに
よりリング体５を０．１ｍｍ単位の精度で上下動するよ
うに構成される。なお図２中４６ａはガイド棒である。The up-and-down mechanism 44 is provided with a ball screw 47 screwed to a support plate 46, as shown in FIG.
It is configured to be driven by the motor 48 via the transmission mechanism 49, whereby the ring body 5 is vertically moved with an accuracy of 0.1 mm. In FIG. 2, 46a is a guide rod.
【００２１】処理室２の側壁２１の一部は載置台４１及
びその下方領域を囲むように処理室２の内部へ突出して
形成されており、この突出部２１ａの内周縁部の上端部
は、ウエハが載置台４１上へ載置され、リング体５がウ
エハ表面の周縁部を覆うときには、リング体５の外周縁
部の下端部との距離Ｆが例えば０．５〜３ｍｍとなるよ
うに設定されており、この側壁２１の突出部２１ａとリ
ング体５との間の隙間は後述のパージガスの流路を成し
ている。また側壁２１には処理室２を冷却するための冷
却水の循環通路２２が形成されると共に、図示しない真
空ポンプに接続されて処理室２内を所定の圧力に維持す
る排気孔２３が設けられている。さらに処理室２の底壁
２４及び側壁２１の突出部２１ａには、ウエハの裏面側
即ち載置台４１の方向へ向かって例えばＮ2 ガスからな
るパージガスを供給するためのパージガス供給路２５が
形成されている。A part of the side wall 21 of the processing chamber 2 is formed so as to project into the processing chamber 2 so as to surround the mounting table 41 and the lower region thereof, and the upper end portion of the inner peripheral edge of the projecting portion 21a is When the wafer is placed on the mounting table 41 and the ring body 5 covers the peripheral edge of the wafer surface, the distance F from the lower end of the outer peripheral edge of the ring body 5 is set to, for example, 0.5 to 3 mm. The gap between the projecting portion 21a of the side wall 21 and the ring body 5 forms a flow path for purge gas described later. A cooling water circulation passage 22 for cooling the processing chamber 2 is formed in the side wall 21, and an exhaust hole 23 is provided which is connected to a vacuum pump (not shown) to maintain the inside of the processing chamber 2 at a predetermined pressure. ing. Further, a purge gas supply passage 25 for supplying a purge gas made of, for example, N 2 gas toward the back surface side of the wafer, that is, in the direction of the mounting table 41 is formed in the bottom wall 24 of the processing chamber 2 and the protruding portions 21 a of the side wall 21. ing.
【００２２】処理室２の底部には、例えば石英製の透過
窓６１が取り付けられ、この透過窓６１を介して加熱室
６２が配設されている。加熱室６２にはウエハを加熱す
るための加熱手段をなす複数の加熱ランプ６３が上下２
枚の回転板６４、６５の所定位置に固定されており、こ
の回転板６４、６５は回転軸６６を介して回転機構６７
に接続されている。また加熱室６２の側部には、冷却エ
アを導入することにより処理室２内及び透過窓６１の過
熱を防止するための冷却エア導入口６８が設けられてい
る。A transparent window 61 made of, for example, quartz is attached to the bottom of the processing chamber 2, and a heating chamber 62 is disposed through the transparent window 61. In the heating chamber 62, a plurality of heating lamps 63 forming a heating means for heating the wafer are arranged in the upper and lower portions.
The rotary plates 64 and 65 are fixed at predetermined positions, and the rotary plates 64 and 65 are rotated by a rotary mechanism 67 via a rotary shaft 66.
It is connected to the. Further, a cooling air introduction port 68 for preventing overheating of the inside of the processing chamber 2 and the transmission window 61 by introducing cooling air is provided on the side portion of the heating chamber 62.
【００２３】次に上述実施例の作用について述べると、
先ず被処理体であるウエハ、例えば全面がＳｉＯ2 膜で
被覆されたシリコンウエハの表面にＴｉＮ膜を形成した
ウエハを、図示しない搬送アームにより図示しない搬出
入口を介して載置台４１上に載置し、その後リング体５
を上下機構４４により下降させてウエハの表面の周縁部
を押圧する。次いで加熱手段６３を作動させてウエハを
例えば３５０〜５００℃に加熱すると共に、図示しない
真空ポンプにより排気孔２３を介して排気しながら、処
理ガス供給管３１よりガス導入室３２を介して例えばＷ
Ｆ6 ガスからなる処理ガスを例えば１０〜２００ＳＣＣ
Ｍの流量で処理室２内に供給し、処理室２内を所定の圧
力に維持する。ここでＷＦ6 ガスはウエハの熱により分
解されて、Ｗ（タングステン）が主成され、ウエハの表
面に膜状に堆積される。Next, the operation of the above embodiment will be described.
First, a wafer to be processed, for example, a wafer having a TiN film formed on the surface of a silicon wafer whose entire surface is covered with a SiO 2 film is mounted on a mounting table 41 by a transfer arm (not shown) through a carry-in / out port (not shown). And then ring body 5
Is lowered by the vertical movement mechanism 44 to press the peripheral portion of the front surface of the wafer. Next, the heating means 63 is operated to heat the wafer to, for example, 350 to 500 ° C., and while the gas is exhausted through the exhaust hole 23 by a vacuum pump (not shown), the processing gas supply pipe 31 passes through the gas introduction chamber 32 and, for example, W.
The processing gas composed of F 6 gas is, for example, 10 to 200 SCC.
It is supplied into the processing chamber 2 at a flow rate of M, and the inside of the processing chamber 2 is maintained at a predetermined pressure. Here, the WF 6 gas is decomposed by the heat of the wafer, W (tungsten) is mainly formed, and deposited on the surface of the wafer in a film shape.
【００２４】このときウエハの表面と共に、リング体５
の押えリング部５１の表面や内周縁部、内周縁部の裏面
もＷ膜が成膜されるが、押えリング部５１の裏面とウエ
ハの表面との間には既述したような隙間が形成されてい
るので、図４に示すようにＷ膜がウエハ側を押えリング
部５１側とに分離され、この部分での膜の連続が防止さ
れるし、また既に詳述したようにこの隙間内にＷ膜が形
成されることもない。At this time, together with the surface of the wafer, the ring body 5
The W film is formed on the front surface of the pressing ring portion 51, the inner peripheral edge portion, and the back surface of the inner peripheral edge portion, but the gap as described above is formed between the rear surface of the pressing ring portion 51 and the front surface of the wafer. Therefore, as shown in FIG. 4, the W film is separated from the wafer side into the holding ring portion 51 side and the continuity of the film at this portion is prevented. Also, no W film is formed.
【００２５】一方パージガス供給路２５からはウエハの
裏面側からリング体５へ向けてパージガスが例えば１０
０ｃｃ／ｍｉｎ〜２Ｌ／ｍｉｎの流量で供給され、この
ガスの全部またはほぼ全部は、図３に矢印で示すよう
に、ウエハ上のリング体５と側壁２１の突出部２１ａと
の間の流路を通って、ウエハの周縁部から外方側へ流れ
る。このため処理ガスのウエハの周縁部及び裏面への周
り込みが阻止され、この結果ウエハの周縁部や裏面に対
するＷ膜の付着が防止されると共に、パージガスは、ウ
エハへ向けて流れる処理ガスの流れを妨げることなくウ
エハの外方側へ流れるため、ウエハの表面への成膜が均
一に行なえる。なおリング体５の内周縁部の裏面とウエ
ハの表面との間の隙間は１０μｍ〜２００μｍ程度に形
成されているので、この隙間を介してパージガスがウエ
ハ表面に周り込むことはない。On the other hand, the purge gas is supplied from the purge gas supply passage 25 toward the ring body 5 from the back side of the wafer, for example, 10
The gas is supplied at a flow rate of 0 cc / min to 2 L / min, and all or almost all of this gas flows through the flow path between the ring body 5 on the wafer and the protrusion 21a of the side wall 21, as shown by the arrow in FIG. Through the periphery of the wafer to the outside. Therefore, the processing gas is prevented from entering the peripheral portion and the back surface of the wafer, and as a result, the W film is prevented from adhering to the peripheral portion and the rear surface of the wafer, and the purge gas is a flow of the processing gas flowing toward the wafer. Since it flows to the outer side of the wafer without disturbing the above, the film can be uniformly formed on the surface of the wafer. Since the gap between the back surface of the inner peripheral edge of the ring body 5 and the front surface of the wafer is formed to be about 10 μm to 200 μm, the purge gas does not go around the wafer surface through this gap.
【００２６】このようにしてウエハの成膜処理を行った
後、リング体５を上下機構４４によりウエハの上方へ引
き上げ、ウエハの表面の周縁部から取り外し、ウエハを
図示しない搬送アームにより図示しない搬出入口を介し
て、処理室２の外部へ搬出する。After performing the film forming process on the wafer in this manner, the ring body 5 is pulled up above the wafer by the up-and-down mechanism 44, removed from the peripheral portion of the surface of the wafer, and the wafer is unloaded by a transfer arm (not shown). It is carried out of the processing chamber 2 via the inlet.
【００２７】このように上述実施例では、ウエハの周縁
部をリング体５で覆うことにより、ウエハの裏面側から
供給されたパージガスを、ウエハの周縁部から外方側へ
通流させるようにしたので、処理ガスのウエハの周縁部
への周り込みが阻止され、この結果ウエハの周縁部や裏
面に対するＷ膜の付着が効果的に防止されると共に、パ
ージガスはウエハへ向けて均一に流れる処理ガスの流れ
を妨げることなくウエハの外方側へ通流するため、ウエ
ハの成膜が均一に行われる。またリング体５の内周縁部
の裏面とウエハの表面との間には所定の間隔の隙間が形
成されているため、Ｗ膜がリング体５からウエハの表面
に亘って連続して形成されることなく夫々に分離され、
従ってリング体５をウエハから取り外す際にＷ膜が切断
されることはないので、Ｗ膜の剥れによるパーティクル
の発生が抑えられ、ウエハの汚染を防ぐことができる。As described above, in the above-described embodiment, the peripheral edge of the wafer is covered with the ring member 5 so that the purge gas supplied from the back surface side of the wafer is allowed to flow from the peripheral edge of the wafer to the outside. Therefore, the processing gas is prevented from flowing into the peripheral portion of the wafer, and as a result, the W film is effectively prevented from adhering to the peripheral portion and the back surface of the wafer, and the purge gas is the processing gas which flows uniformly toward the wafer. Since it flows to the outer side of the wafer without disturbing the flow of the wafer, the film formation of the wafer is uniformly performed. Further, since a gap having a predetermined interval is formed between the back surface of the inner peripheral edge of the ring body 5 and the front surface of the wafer, the W film is continuously formed from the ring body 5 to the front surface of the wafer. Without being separated from each other,
Therefore, since the W film is not cut when the ring body 5 is detached from the wafer, the generation of particles due to the peeling of the W film is suppressed, and the contamination of the wafer can be prevented.
【００２８】なお本発明におけるリング体とは環状構造
体を意味するものであって、押えリング部の形状は被処
理体の形状に合わせて適宜選択されるものであり、例え
ば被処理体が多角形形状であれば、押えリング部は多角
形形状の環状体となる。またリング体の接触部の形状は
四角形に限定されず、リング体の内周縁部と被処理体の
表面との間に所定形状を形成するものであれば、例えば
押えリング部の全周に亘って配設される環状体であって
もよい。さらにこのリング体は、処理室の外で被処理体
上に載せた後に、被処理室内へ搬入するようにしてもよ
い。The ring body in the present invention means an annular structure, and the shape of the pressing ring portion is appropriately selected according to the shape of the object to be processed, and for example, the object to be processed is many. If it has a rectangular shape, the pressing ring portion becomes a polygonal annular body. Further, the shape of the contact portion of the ring body is not limited to a quadrangle, and as long as it forms a predetermined shape between the inner peripheral edge portion of the ring body and the surface of the object to be processed, for example, the entire circumference of the holding ring portion. It may be a ring-shaped body that is arranged. Further, the ring body may be loaded on the object to be processed outside the processing chamber and then carried into the object to be processed.
【００２９】以上実施例としてＣＶＤ装置について述べ
たが、スパッタ装置、レーザーアニール装置、エッチン
グ装置、アッシング装置等に本発明を使用することがで
きる。また被処理体として半導体ウエハについて述べた
が、例えば液晶基板の製造工程におけるガラス基板等に
おいても適用することができる。この場合リング体は、
液晶基板の形状に合わせて四角に構成することは、本発
明の範囲で行うことのできる技術である。Although the CVD apparatus has been described as an embodiment above, the present invention can be applied to a sputtering apparatus, a laser annealing apparatus, an etching apparatus, an ashing apparatus and the like. Although the semiconductor wafer has been described as the object to be processed, it can be applied to, for example, a glass substrate in a manufacturing process of a liquid crystal substrate. In this case, the ring body
Forming a rectangle in accordance with the shape of the liquid crystal substrate is a technique that can be performed within the scope of the present invention.
【００３０】[0030]
【発明の効果】本発明によれば、被処理体の被処理面と
リング体の内周縁部の裏面との間に薄膜が連続して形成
されることを防止すると共に、被処理体の裏面側から供
給されたパージガスを、被処理面の周縁部の外方側へ通
流するようにしたので、パーティクルの発生が抑えら
れ、被処理体の周縁部及び裏面への成膜が防止でき、し
かも被処理体の被処理面への成膜を均一に行うことがで
きる。According to the present invention, it is possible to prevent the thin film from being continuously formed between the surface to be processed of the object to be processed and the back surface of the inner peripheral edge portion of the ring body, and also to provide the back surface of the object to be processed. Since the purge gas supplied from the side is made to flow to the outside of the peripheral portion of the surface to be processed, generation of particles is suppressed, and film formation on the peripheral portion and the back surface of the target object can be prevented, Moreover, it is possible to uniformly form a film on the surface to be processed of the object to be processed.
【図１】本発明の実施例に係る成膜処理装置の内部を示
す断面図である。FIG. 1 is a cross-sectional view showing the inside of a film forming processing apparatus according to an embodiment of the present invention.
【図２】本発明の実施例の要部を示す斜視図である。FIG. 2 is a perspective view showing a main part of an embodiment of the present invention.
【図３】本発明の実施例の要部を示す断面図である。FIG. 3 is a sectional view showing a main part of an embodiment of the present invention.
【図４】本発明の実施例の要部を示す断面図である。FIG. 4 is a sectional view showing a main part of an embodiment of the present invention.
【図５】従来の成膜処理装置の要部を示す断面図であ
る。FIG. 5 is a cross-sectional view showing a main part of a conventional film forming apparatus.
【図６】従来の成膜処理装置の要部を示す断面図であ
る。FIG. 6 is a cross-sectional view showing a main part of a conventional film forming processing apparatus.
２ 処理室 ２５ パージガス供給路 ３１ 処理ガス供給管 ３２ ガス導入室 ４１ 載置台 ５ リング体 ５１ 押えリング部 ５２ 接触部 ６３ 加熱手段 2 processing chamber 25 purge gas supply path 31 processing gas supply pipe 32 gas introduction chamber 41 mounting table 5 ring body 51 pressing ring portion 52 contact portion 63 heating means
Claims (1)
に当該被処理面に対して接離自在に設けられると共に、
前記被処理面を押えるための押え面が形成されたリング
体を備え、前記被処理面に処理ガスを供給して薄膜を形
成する一方被処理面の裏面側からパージガスを供給する
成膜処理装置において、 前記リング体は、前記被処理面の周縁部を覆うときに外
周縁部が被処理体の外方側に突出するように形成され、 少くともリング体の内周縁部の裏面は、薄膜が潜り込ま
ない程度の微少な隙間が被処理体の被処理面との間に形
成されるように、前記押え面よりも高く形成されている
ことを特徴とする成膜処理装置。1. A processing object is provided so as to come into contact with and separate from the surface to be processed so as to cover a peripheral portion of the processing surface of the object.
A film forming apparatus including a ring body having a pressing surface for pressing the surface to be processed, supplying a processing gas to the surface to be processed to form a thin film, and supplying a purge gas from the back surface side of the surface to be processed. In the above, the ring body is formed so that the outer peripheral edge portion projects outwardly of the object to be processed when covering the peripheral edge portion of the surface to be processed, and at least the back surface of the inner peripheral edge portion of the ring member is a thin film. The film forming apparatus is formed so as to be formed higher than the holding surface so that a minute gap that does not penetrate into the object is formed between the object and the surface to be processed.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05225211A JP3131860B2 (en) | 1993-08-18 | 1993-08-18 | Film processing equipment |
| KR1019940020358A KR100274754B1 (en) | 1993-08-18 | 1994-08-18 | Film growth apparatus and film growth method |
| US08/669,802 US5711815A (en) | 1993-08-18 | 1996-06-27 | Film forming apparatus and film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05225211A JP3131860B2 (en) | 1993-08-18 | 1993-08-18 | Film processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0758016A true JPH0758016A (en) | 1995-03-03 |
| JP3131860B2 JP3131860B2 (en) | 2001-02-05 |
Family
ID=16825732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05225211A Expired - Lifetime JP3131860B2 (en) | 1993-08-18 | 1993-08-18 | Film processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3131860B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08191051A (en) * | 1994-08-23 | 1996-07-23 | Novellus Syst Inc | Chemical vapor deposition method and substrate supporting device for chemical vapor deposition |
| JPH08269716A (en) * | 1995-03-31 | 1996-10-15 | Nec Corp | Device for producing semiconductor device and production of semiconductor device |
| JP2001053030A (en) * | 1999-08-11 | 2001-02-23 | Tokyo Electron Ltd | Film forming device |
| US6306770B1 (en) | 1998-03-20 | 2001-10-23 | Nec Corporation | Method and apparatus for plasma etching |
| WO2005015620A1 (en) * | 2003-08-11 | 2005-02-17 | Tokyo Electron Limited | Heat-treating apparatus |
| JP2009041110A (en) * | 1995-06-07 | 2009-02-26 | Applied Materials Inc | Removable ring for controlling edge deposition in substrate processing apparatus |
| JP4833496B2 (en) * | 2000-08-04 | 2011-12-07 | アプライド マテリアルズ インコーポレイテッド | Substrate processing apparatus and method for supporting a substrate in a chamber |
| KR101432561B1 (en) * | 2007-11-23 | 2014-08-22 | (주)소슬 | Method for manufacturing thin film and apparatus for the same |
| JP2020066763A (en) * | 2018-10-23 | 2020-04-30 | 住友金属鉱山株式会社 | Substrate holding mechanism, deposition device and deposition method for polycrystalline film |
-
1993
- 1993-08-18 JP JP05225211A patent/JP3131860B2/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08191051A (en) * | 1994-08-23 | 1996-07-23 | Novellus Syst Inc | Chemical vapor deposition method and substrate supporting device for chemical vapor deposition |
| JPH08269716A (en) * | 1995-03-31 | 1996-10-15 | Nec Corp | Device for producing semiconductor device and production of semiconductor device |
| JP2009041110A (en) * | 1995-06-07 | 2009-02-26 | Applied Materials Inc | Removable ring for controlling edge deposition in substrate processing apparatus |
| JP2012251243A (en) * | 1995-06-07 | 2012-12-20 | Applied Materials Inc | Movable ring for controlling edge deposition in substrate processing apparatus |
| US6306770B1 (en) | 1998-03-20 | 2001-10-23 | Nec Corporation | Method and apparatus for plasma etching |
| JP2001053030A (en) * | 1999-08-11 | 2001-02-23 | Tokyo Electron Ltd | Film forming device |
| JP4833496B2 (en) * | 2000-08-04 | 2011-12-07 | アプライド マテリアルズ インコーポレイテッド | Substrate processing apparatus and method for supporting a substrate in a chamber |
| WO2005015620A1 (en) * | 2003-08-11 | 2005-02-17 | Tokyo Electron Limited | Heat-treating apparatus |
| US7250094B2 (en) | 2003-08-11 | 2007-07-31 | Tokyo Electron Limited | Heat treatment apparatus |
| US7769279B2 (en) | 2003-08-11 | 2010-08-03 | Tokyo Electron Limited | Heat treatment apparatus |
| KR101432561B1 (en) * | 2007-11-23 | 2014-08-22 | (주)소슬 | Method for manufacturing thin film and apparatus for the same |
| JP2020066763A (en) * | 2018-10-23 | 2020-04-30 | 住友金属鉱山株式会社 | Substrate holding mechanism, deposition device and deposition method for polycrystalline film |
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| JP3131860B2 (en) | 2001-02-05 |
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