KR101432561B1 - Method for manufacturing thin film and apparatus for the same - Google Patents

Abstract

The present invention relates to a thin film manufacturing method and a thin film manufacturing apparatus for concealing various foreign substances formed on a back surface of a substrate such as a wafer on which devices having a predetermined thin film pattern are formed. Shielding the first surface of the substrate; And depositing a thin film on the second surface of the substrate to deposit a uniform film on the surface of the substrate where etching is required without performing etching, thereby hiding foreign substances such as particles on the back surface of the substrate, So that the subsequent process can be facilitated.

Thin film manufacturing apparatus, wafer, substrate back surface, planarization

Description

TECHNICAL FIELD [0001] The present invention relates to a thin film manufacturing method and a thin film manufacturing apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film manufacturing method and a thin film manufacturing apparatus, and more particularly, to a thin film manufacturing method and a thin film manufacturing apparatus for concealing various foreign substances formed on the back surface of a substrate, will be.

A semiconductor device or a flat panel display is formed on the substrate by a plurality of thin film deposition and etching. That is, a thin film is deposited at a central portion of a predetermined region of a substrate, and a part of the thin film at the center of the substrate is removed through an etching process using an etch mask to produce a device having a predetermined thin film pattern.

However, since the thin film is formed on the entire surface of the substrate during the deposition of the thin film and the thin film is used as the etching target in the center of the substrate during the etching, the thin film remains on the edge of the substrate without being removed, A phenomenon occurs in which particles are deposited on the substrate. In addition, since the substrate support, which normally supports the substrate, seats the substrate by the electrostatic force or the vacuum force, the interface between the substrate and the substrate support is spaced by a predetermined distance to generate a gap, And a thin film are deposited. Accordingly, when a continuous process is performed without removing the particles and the deposited thin film existing on the substrate, there arise many problems such as warping of the substrate and difficulty in alignment of the substrate.

Conventionally, as a method for removing the particles and the deposited thin film as described above, wet etching for removing particles on the surface by dipping in a solvent or rinse, and dry cleaning for removing the surface by plasma are known. Wet etching is effectively used to remove particles applied to the surface of a substrate, but it is difficult to remove the substrate only locally due to difficulty in process control. In addition, there are problems such as a problem of cost increase due to use of a large chemical agent, Which causes environmental problems, requires long processing time, and requires a large-sized equipment. On the other hand, the dry etching has an advantage of solving the above-mentioned problems of wet etching by removing thin films or particles on the substrate and the back surface by using plasma. Therefore, in recent years, development of a dry etching apparatus for etching the back surface of the substrate has been actively carried out.

However, in the dry etching as described above, when the back surface of the substrate is etched by the plasma, plasma is introduced onto the front surface of the substrate on which the thin film pattern or the like is formed, or plasma is formed by gas discharge in the space, There is a concern. Therefore, there is a disadvantage in that a separate means for protecting the front surface of the wafer from etching is required in order to reduce the yield of the final product due to the etching of the front surface of the wafer, increase the defective rate, or prevent it from occurring. Further, there is a problem that the back surface of the wafer may not be smooth due to the etching of the back surface of the wafer, and the back surface of the wafer may be uneven due to the back surface of the wafer.

Disclosure of the Invention The present invention has been conceived to solve the problems as described above, and it is an object of the present invention to provide a method of manufacturing a semiconductor device, in which foreign substances such as particles on the back surface of a substrate are concealed by depositing a uniform film without performing etching on a surface requiring etching of the substrate, And to provide a thin film manufacturing method and a thin film manufacturing apparatus which are capable of facilitating a subsequent process.

The present invention provides a method of manufacturing a semiconductor device, comprising: providing a substrate; Shielding the first surface of the substrate; And depositing a thin film on the second surface of the substrate.

The step of shielding the first surface of the substrate may include the step of adjusting a gap between the substrate and the shielding portion provided separately from the substrate, and the gap may be 0.1 to 0.8 mm.

Further, the method may further include the step of injecting a first gas onto the first surface of the substrate, wherein the first gas may be at least one selected from the group consisting of a Group 18 element and nitrogen.

The second gas may also be a gas comprising TEOS, and may be reactive or non-reactive to constrain the second gas on the second side of the substrate. And injecting a third gas.

In addition, depositing the thin film on the second side of the substrate may comprise forming a plasma on the second side of the substrate.

The step of depositing the thin film on the second surface of the substrate may include adjusting an interval between the substrate and the electrode forming the plasma, and the interval may be 10 to 30 mm.

Further, the thin film may further include a step of planarizing the second side of the substrate on which the thin film is deposited.

The present invention relates to a plasma processing apparatus comprising: a chamber; A substrate support for supporting a substrate within the chamber; A shielding portion disposed apart from the substrate support in a direction of one surface of the substrate; An electrode disposed apart from the substrate support in the other direction of the substrate; And a power source for applying power to the electrode.

Here, the power supply unit may be a high-frequency power supply unit, and the shielding unit may be grounded.

Also, the shielding portion may be provided with a first gas injection means for injecting a first gas, and a second gas injection means for injecting a second gas generated by the plasma by the electrode may be provided, A third gas injection means for injecting a third gas for restricting the second gas may be provided.

Here, the second gas injection means may be provided on the electrode, and the third gas injection means may be provided on the outer edge of the electrode or on the substrate support, and preferably the third gas injection means And may be inclined to face the second gas injection means.

The substrate support may support at least a part of the outer edge of the substrate so that the other surface of the substrate is exposed in the direction of the electrode.

By the thin film manufacturing method and the thin film manufacturing apparatus according to the present invention, it is possible to deposit a uniform film without performing etching on the surface requiring etching of the substrate, thereby hiding foreign substances such as particles on the back surface of the substrate, Planarization can be promoted to facilitate the subsequent process.

Hereinafter, a thin film manufacturing method and a thin film manufacturing apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Like reference numerals refer to like elements throughout.

1 is a cross-sectional view schematically showing a thin film production apparatus according to an embodiment of the present invention. Each of the drawings shown below including Fig. 1 is schematically shown, and the size and shape of each part are exaggerated appropriately in order to facilitate understanding.

1, a thin film manufacturing apparatus 1 according to an embodiment of the present invention includes a shielding portion 30 through which a first gas is injected, a shielding portion 30 which can be spaced apart from the shielding portion 30, And a substrate 50 spaced apart from the substrate support 20 and supported by the substrate support 20 such that a power source 70 is applied and a second gas is applied to the substrate support 20, And an electrode 40 for forming a plasma.

In the embodiment of the present invention, the thin film production apparatus 1 is an apparatus for generating a reactive plasma to deposit a thin film on the back side of a substrate 50 such as a wafer on which elements having a predetermined thin film pattern are formed.

The thin film production apparatus 1 includes a chamber 10 formed so as to be capable of opening and closing and a conventional vacuum evacuation system 60 communicating with the chamber 10.

A shielding portion 30 is disposed on the upper portion of the chamber 10 and a heating coil 38 connected to the heating control portion 37 is formed inside the shielding portion 30 for heating. The shielding portion 30 is formed with a spray hole 33 through which a non-reactive gas is sprayed. The spray hole 33 is communicated with the supply hole 31 so as to supply a non-reactive gas from the outside of the chamber 10 do. Preferably, the shield 30 is provided with a plurality of spray holes 33 (not shown) so as to uniformly spray non-reactive gas supplied from the outside of the chamber 10 through one supply hole 31, Called showerhead type, and a plurality of spray holes 33 may be branched from the supply hole 31 communicating with the inside of the shield 30. More preferably, the diameter of the spray hole 33 formed at a remote position with respect to the portion where the supply hole 31 is formed in the shield 30 is formed to be larger than the diameter of the spray hole 33 formed at a short distance, So as to compensate the pressure drop due to the increase of the gas flow path during injection. In addition, the shielding portion 30 may be configured to have a cooling channel for controlling the heating temperature therein, and may be grounded. The gas supplied through the supply hole 31 of the shield 30 may be hydrogen or an inert gas and may include other nonreactive gases such as the substrate front face 51 and the gas that does not react with the substrate back face 52 Lt; / RTI >

Here, the substrate front surface 51 may be a surface on which an element having a predetermined thin film pattern is formed on a substrate 50 such as a wafer, or may be a surface on which another substrate 50 is not required to be deposited. The substrate 50 is disposed so as to face the spray hole 33 with its front surface 51 spaced from the surface of the shield 30 where the spray holes 33 are formed and is supported by the substrate support 20 .

The substrate support 20 is configured such that the arm 21 extending from the top of the chamber 10 is configured to support the substrate 50 and the arm 21 comprises a drive means (Not shown). The portion where the substrate support 20 exposed to the outside of the chamber 1 is connected to the driving means is composed of a stretchable bellows so as to maintain the vacuum tightness due to the constitution of the stretchable and flexible substrate support 20 by the driving means . The arm 21 of the substrate support 20 is formed to support only the outer edge of the substrate 50 and more specifically only the outer edge of the substrate backside 52. The arm 21 is connected to the drive means, That is, the shielding portion 30, so that the substrate 50 supported thereon is also placed close to or in contact with the shielding portion 30. As shown in FIG. By supporting only the outer edge of the substrate 50 as described above, the substrate support 20, which is free from the risk of contact between the electrode and the substrate support means, is used, unlike the lift pin system, Thereby making it possible to reduce the possibility of the occurrence of the over discharge. Here, the substrate back surface 52 may be a surface opposite to a surface on which a device having a predetermined thin film pattern is formed on a substrate 50 such as a wafer, and foreign substances such as particles of the substrate 50 other than the substrate may be present It may be a plane that requires planarization. The front face 51 of the substrate 50 maintains a predetermined clearance d that is variable with respect to the surface on which the non-reactive gas is sprayed by the shielding portion 30 by the upward and downward movement of the arm 21. [ The substrate support 20 is preferably configured to be electrically floating in the thin film production apparatus 1 and electrically non-interfering with other components. The substrate support 20, including the arm 21, Is made of an insulating material such as Al ₂ O ₃ to prevent damage to the substrate support 20 due to external shocks. The substrate support 20 may be a chamber 10 or a substrate 50 used in addition to the structure shown in Fig. 1, or a substrate support 20 of a different structure depending on the process characteristics.

An electrode 40 is disposed at a lower portion of the substrate support 20 at a predetermined distance from the substrate support 20. The electrode 40 is configured to apply a power source 70, and has a spray hole 42 and a jet port 46 for spraying a reactive gas therethrough.

The spray hole 42 is formed by supplying the reactive gas from the supply means 44 outside the chamber 1 through the supply hole 41 communicating therewith to the chamber 1 The substrate backside 52 is made of a so-called showerhead type so as to inject the reactive gas into the substrate support 20 so as to inject a uniform reactive gas onto the entire back surface 52 of the substrate 50 supported on the substrate support 20. [ A plurality of portions are formed facing toward the direction of FIG. The diameter of the spray hole 42 formed at a remote position with respect to the portion where the supply hole 41 is formed is formed to be larger than the diameter of the spray hole 42 formed near the discharge hole 42, So that the pressure drop due to the increase can be compensated. In addition to this configuration, the gas injection structure in the shield 30 or the electrode 40 can be variously varied as needed.

On the other hand, an insulating ring 43 for concentrating plasma generated on the electrode 40 may be provided on the outer circumference of the electrode 40. The insulating ring 43 may be made of an insulating material such as Al ₂ O ₃ .

The injection port 46 is formed in a so-called nozzle shape so that the reactive gas supplied from the separate supply means 45 is injected from the outer edge of the electrode 40 to the central axis of the electrode 40 or the center of the substrate 50 . The reactive gas injected from the spray hole 42 is prevented from diffusing beyond the plane outer edge of the electrode 40, that is, the reactive gas is discharged only on the plane of the electrode 40 to improve the plasma generation efficiency, It is preferable that the gas pressure in the discharge hole 46 is equal to or greater than the gas pressure in the injection hole 42. [ The reactive gas injected through the injection hole 42 and the injection port 46 of the electrode 40 may contain TEOS (Tetraethyl orthosilicate) source gas and other elements that can be deposited on the substrate back surface 52 It may be a gas containing. In addition, non-reactive gas such as an inert gas may be injected at the injection port 46. Which of the reactive gas or the non-reactive gas is injected at the injection port 46 may vary depending on the required process, and thus the injection pressure at the injection port 46 may also be varied. When the reactive gas is injected at the injection port 46, the plasma generation efficiency at the exposed substrate back surface 52 can be further improved. When the non-reactive gas is injected, the reactive gas injected from the injection hole 42 The constraining efficiency can be improved. The reactive gas can be used only as the reactive gas injected from the injection port 46 without the gas injection at the injection hole 42 when the reactive gas is injected at the injection port 46. [ The reactive gas injected through the injection hole 42 and the injection port 46 can be supplied to the substrate 50 in the vicinity of the substrate 50 because the pressure of the reactive gas near the substrate 50 can be increased, Is less than or equal to the pressure near the substrate (50) of the non-reactive gas injected through the injection hole (33) of the shielding part (30).

The electrode 40 is mounted on the substrate support 20 so as to be movable upward and downward similarly to that of the substrate support 20 by a drive means 49 separately provided outside the chamber 1 (D) from the back surface (52) of the electrode (50) to the electrode (40). A portion where the electrode 40 is connected to the driving means 49 is preferably made of a stretchable bellows so as to maintain the vacuum airtightness due to the configuration of the electrode 40 that can move up and down by the driving means 49 Do.

A cooling passage 48 connected to the cooling water circulating means 47 formed outside the chamber 10 may be provided inside the electrode 40. The cooling water circulating means 47 at this time may be configured as the same member as the cooling flow path for circulating the cooling water to the shielding portion 30. [

The power source 70 connected to the electrode 40 may be a high frequency power having an integer multiple of 13.56 MHz and other power sources may be used depending on the desired process or apparatus. At this time, the configuration of the high frequency power source 70 connected to the electrode 40 includes a matching unit. The shielding portion 30 serves as an anode and the electrode 40 serves as a cathode due to the structure of the electrode 40 to which the grounded shield 30 and the high frequency power source 70 are connected. An alternating vibration of an integral multiple of 13.56 MHz or 13.56 MHz is applied to the gas to improve the plasma generation efficiency.

Fig. 2 is a view showing another example of Fig. 1. Fig.

2, the arm 21 of the substrate support 20 is provided with a separate jetting port 23, as compared with that shown in FIG. The reactive gas or the non-reactive gas is injected in the injection port 23 as in the case of the injection port 46 of the electrode 40 so that the reactive gas injected from the injection hole 42 is not diffused beyond the plane outer edge of the electrode 40 That is, the reactive gas, is discharged only on the back surface of the electrode 40, thereby improving the plasma generation efficiency. At this time, the jetting port 23 may be arranged on the plane on the outer or inner side of the jetting port 46 of the electrode 40, but in any case, it is preferable to be arranged on the outer side of the jetting hole 42. The jetting ports 23 may be arranged in the center direction of the substrate 50 as in the case of the jetting ports 46 of the electrodes 40, but may also be arranged to be vertically downward.

3 schematically shows the flow of gas injected from the injection hole 42 and the injection port 46. As shown in Fig.

3, the reactive gas injected through the injection holes 42 forms a plasma between the electrode 40 and the substrate 50, and a gas is injected in the direction of the plasma forming region from the outer edge of the electrode 40 The plasma region can be concentrated on the substrate backside 52 without diffusing the electrode 40 in the outer edge direction. Of course, the injection angle of the gas through the injection port 46 may be variable depending on the type of the required process and the degree of process progress. It is preferable that the gas pressure P ₁ injected from the injection port 46 is sufficient to confine the flow of the reactive gas injected from the injection hole 42 only onto the electrode 40. In addition, non-reactive gas such as an inert gas may be injected at the injection port 46 to reduce non-reactive gas consumed during the process.

Hereinafter, the operation of the thin film manufacturing apparatus according to the embodiment of the present invention will be described in detail with reference to the accompanying drawings.

FIGS. 4A to 4D sequentially illustrate the operation of the apparatus for manufacturing a thin film according to the embodiment of the present invention. In particular, FIG. 4D shows the gas flow paths during substrate processing by arrows.

In the embodiment of the present invention, the operation of the thin film production apparatus is a deposition method in which thin films and particles deposited on the back surface of a substrate 50 such as a wafer on which devices having a predetermined thin film pattern are formed by generating plasma are concealed.

The operation of the thin film manufacturing apparatus according to the embodiment of the present invention is performed by placing a substrate 50 on the substrate support 80 between the shield 30 and the electrode 40 in the thin film manufacturing apparatus 1 And a second substrate (50) on which a first gas (51) is sprayed and a second gas (52) on the second surface (52) And a substrate processing step of applying a power source (70) to the injected second gas to form a plasma to process the second surface (52) of the substrate (50).

As in FIG. 4A, the substrate 50 is drawn through the inlet provided separately in the chamber 1 and is mounted on the substrate support 80. The substrate 50 supported on the substrate support 80 is placed such that the front surface 51 thereof faces the spray hole 33 of the shield 30 and the back surface 52 faces the spray hole 42 of the electrode do. The substrate support 80 is in the retracted position with a clearance d 'relative to the shield 30 and the electrode 40 is also in the retracted position with a gap D "relative to the shield 30 .

In FIG. 4A, the configuration of the substrate support 80 for supporting the substrate 50 in the lower portion is adopted instead of the configuration of the substrate support 20 for supporting the substrate 50 at the upper portion, unlike in FIGS. It should be noted that in any case, it is possible to comply with the intent of the present invention, and the constitution of the present invention can also be applied to other configurations of the substrate support.

4B, when the chamber 1 is closed and the vacuum is formed through the opening and closing means 11, the substrate support 80 is moved upward by the driving means (not shown) to move the substrate front surface 51 and the shielding portion 30) to make a gap d (d <d '). The distance D "between the electrode 40 and the substrate back surface 52 also becomes smaller than the gap D as the substrate support 80 rises and the gap d between the shield 30 and the substrate front face 51 decreases ').

Then, as shown in FIG. 4C, the electrode 40 is also moved up by the driving means 49 so that the substrate back surface 52 and the electrode 40 form an interval D (D <D '). The gap d between the shield 30 and the substrate 50 or the gap D between the substrate 50 and the electrode 40 can be adjusted by the substrate support 80 and / It may be achieved by driving at least two members of the shield 30, the substrate support 80 and the electrode 40 without achieving the up and down movements of the electrode 40, A driving means may be provided. The interval D between the electrode 40 and the substrate rear surface 52 does not necessarily have to be varied and is set to be any distance D, D ', D "so long as plasma can be generated within the interval D. [ It is also possible to move the substrate support 80 without moving the electrode 40 and then to carry out the process. It goes without saying that other than the intervals D, D ', D " And the distance between the substrate support 80 and the electrode 40 may be variable depending on the required process, chamber, or substrate size, and may vary during the process.

Thereafter, as shown in FIG. 4D, a non-reactive gas is first introduced through the shield 30, reactive gas is introduced through the electrode 40, power is applied through the RF power source 70, . A plasma of the reactive gas is formed in the plasma generation region, and a deposition process is performed in which a thin film is deposited on the substrate back surface 52. At this time, the plasma is formed at a distance D between the substrate back surface 52 and the electrode 40, and the non-reactive gas is introduced into the gap d between the shield 30 and the substrate front surface 51, Only the gas flow in the state exists. At this time, the gap (d) is preferably 0.1 to 0.8 mm. When the clearance d is less than 0.1 mm, there is a possibility of contact with the shield 30 and it is necessary to maintain a gap d of 0.1 mm or more in order to perform a more stable process. The pressure of the relatively unreactive gas is lowered in the gap d exceeding 0.8 mm and the plasma formed in the gap D can flow into the gap d and be deposited on the substrate front surface 51, ) Is preferably 0.8 mm or less. In addition, in the gap exceeding 0.8 mm, the non-reactive gas may be plasmaized, and thereby the front surface 51 of the substrate may be deposited. However, in the gap d of 0.8 mm or less, It is possible to maintain a region where the plasma is not generated by the process voltage. The interval D is preferably 10 to 30 mm. As the distance D becomes smaller, the deposition rate increases and the uniformity decreases. On the other hand, as the distance D increases, the uniformity is improved but the deposition rate is lowered. Therefore, in order to secure a satisfactory deposition rate and uniformity, it is preferable to adjust the interval D. Therefore, in the present invention, the interval D is adjusted to 10 to 30 mm.

The non-reactive gas injected from the shield 30 preferably has a higher breakdown voltage than the reactive gas injected from the electrode 40, and preferably does not generate plasma due to the electric power applied to the electrode 40. The reactive gas injected from the electrode 40 may use a gas containing TEOS source gas and a gas containing other elemental species may be used to control the thin film species deposited on the substrate backside 52 to be used . When a plasma is formed with a reactive gas containing TEOS, a TEOS film may be formed on the substrate back surface 52. The thus formed TEOS film conceals foreign matter such as particles of the substrate back surface 52 and forms a new flat surface as a TEOS film on the substrate back surface 52. [ At this time, thermal energy is supplied to the substrate 50 as the heating through the shielding portion 30, so that the TEOS film deposited on the substrate backside 52 can be uniformly deposited and the thinner film structure can be grown more densely .

The gas pressure P ₂ injected from the injection hole 42 of the electrode 40 is not greater than the gas pressure P ₁ injected from the injection port 46 of the electrode 40, The plasma generated by the reactive gas can be concentrated on the electrode 40. [ The gas pressure P ₃ of the non-reactive gas injected from the shield 30 is controlled by the gas pressure P ₂ injected from the injection hole 42 and the gas pressure P ₁ injected from the injection port 46 of the electrode 40 ), The reactive gas can be prevented from flowing into the gap (d), and the concentration of the reactive gas plasma can be further secured.

A separate restraining magnetic field may be further formed for confining the plasma region, and the restraining magnetic field may be formed by a permanent magnet, an electromagnet, an induction magnetic field, or the like. In some cases, the plasma generation efficiency may be improved by causing the ions in the plasma to oscillate with magnetic force. In this case, the magnetic field to be formed may be formed differently depending on the shape of the chamber 10, the substrate 50, the shield 30, the electrode 40, or the like.

The power source 70 for applying electric power to the electrode 40 may be a direct current or an alternating current in addition to the high frequency power source, or a single-pole or bipolar pulse power source may be used. In this case, the electrical connection of the shield 30 or the electrode 40 may be changed depending on the power source used, and a separate member for power application may be further provided.

Upon completion of the deposition, the power supply is stopped, supply of reactive gas and non-reactive gas is stopped, and by-products in the chamber 10 are removed through the vacuum exhaust. When the deposition byproduct is removed, the electrode 40 is lowered through the driving means 49 and the substrate 50 is evacuated from the shielding portion 30 through the driving means of the substrate supporter 20. Then, the vacuum is discarded and the opening and closing means 11 is opened, and the substrate 50 is taken out to complete the deposition process. In some cases, the method may further include the step of flattening the drawn-out substrate 50, more specifically, the TEOS film formed on the back surface 52 of the drawn-out substrate by a high-temperature process or the like.

The driving of the constituent elements at each step of the process is shown in Fig.

First, in the standby state, the thin film manufacturing apparatus 1 is positioned above the substrate support 20 in the direction of the shield 30 (S1). Thereafter, the substrate support 20 is lowered (S2) by injecting air into the chamber 10 through the purge valve, and the substrate 50 is introduced through the opening / closing means 11 (S3) after the atmospheric pressure atmosphere is formed.

When the opening and closing means 11 is closed, the substrate support 20 is raised (S4). When a vacuum atmosphere is formed, inert gas is introduced (S5) and adjustment of the gap between the substrate 50 and the shielding portion 30 (S6) and the gap is maintained (S7).

Thereafter, the process gas is introduced (S8) to form the required process atmosphere (S9), and the process is performed by applying the RF power (S10).

When the process is terminated, the inflow of the process gas and the inert gas is interrupted (S11), and the maintained gap is separated through readjustment (S12).

The chamber 10 is brought into an atmospheric pressure atmosphere and the substrate 50 is drawn out through the opening and closing means 11 (S15), and the chamber 10 is opened A hole is formed (S16) and the substrate support table 20 is raised to a standby position to stand the apparatus 1 or to prepare a subsequent process.

Although the technical idea of the present invention has been specifically described in accordance with the above preferred embodiments, it is to be noted that the above-described embodiments are intended to be illustrative and not restrictive. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

1 is a cross-sectional view schematically showing a thin film production apparatus according to an embodiment of the present invention,

Fig. 2 is a view showing another example of Fig. 1,

3 is a schematic view showing a gas flow of a thin film production apparatus according to an embodiment of the present invention,

FIGS. 4A to 4D sequentially illustrate operation of the thin film manufacturing apparatus according to the embodiment of the present invention; FIGS.

Fig. 5 is a diagram showing the driving of constituent elements at each step of the process; Fig.

Description of the Related Art

1 ... thin film manufacturing apparatus, 10 ... chamber,

20: substrate support, 30: shielding,

40 ... Electrode, 50 ... Substrate.

Claims (22)

Providing a substrate; Shielding the first surface of the substrate; And Depositing a thin film on a second side of the substrate, Wherein shielding the first surface of the substrate includes adjusting a gap between the substrate and a shielding portion provided apart from the substrate. delete The thin film manufacturing method according to claim 1, wherein the gap is 0.1 to 0.8 mm. The method of claim 1, further comprising the step of injecting a first gas onto a first side of the substrate. 5. The method of claim 4, wherein the first gas is at least one selected from the group consisting of Group 18 elements and nitrogen. The method of claim 1, wherein the second gas is injected onto the second surface of the substrate. 7. The method of claim 6, wherein the second gas is a gas comprising TEOS. 7. The method of claim 6, comprising a third gas injection step of constraining the second gas on the second side of the substrate. 9. The method of claim 8, wherein the third gas is a reactive or non-reactive gas. The method of claim 1, wherein depositing a thin film on a second side of the substrate comprises forming a plasma on a second side of the substrate. 11. The method of claim 10, wherein depositing the thin film on the second side of the substrate comprises adjusting an interval between the substrate and the electrode forming the plasma. 12. The method according to claim 11, wherein the interval is 10 to 30 mm. The method of claim 1, further comprising planarizing a second side of the substrate on which the thin film is deposited. chamber; A substrate support for supporting a substrate within the chamber; A shielding portion disposed apart from the substrate support in a direction of one surface of the substrate; An electrode disposed apart from the substrate support in the other direction of the substrate; And A power supply unit for applying power to the electrode; And the thin film manufacturing apparatus. 15. The apparatus of claim 14, wherein the power supply is a high frequency power supply and the shield is grounded. 15. The thin film production apparatus according to claim 14, wherein the shielding portion is provided with a first gas injection means through which a first gas is injected. 15. The apparatus of claim 14, further comprising second gas injection means for injecting a second gas generated by the plasma by the electrode. The thin film production apparatus according to claim 17, further comprising third gas injection means for injecting a third gas for confining the second gas. The thin film production apparatus according to claim 18, wherein the second gas injection means is provided on the electrode, and the third gas injection means is provided on the outer edge of the electrode. The thin film production apparatus according to claim 18, wherein the third gas injection means is provided on the substrate support. The thin film production apparatus according to claim 19 or 20, wherein the third gas injection means is formed so as to be inclined toward the second gas injection means. 15. The apparatus according to claim 14, wherein the substrate support supports at least a part of the outer edge of the substrate such that the other surface of the substrate is exposed in a direction toward the electrode.

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