KR101515149B1 - Assembly for blocking plasma and apparatus for processing plasma having the same - Google Patents

Abstract

The present invention provides a plasma shield assembly including a plasma shield plate disposed on one side of a substrate placed inside a chamber, and a magnet member provided on an edge region of the plasma shield plate, and a plasma processing apparatus having the plasma shield assembly.

The present invention provides a method of manufacturing a plasma display panel in which a magnetic member is provided in an edge region in a plasma shielding portion disposed in an upper region of a substrate or an edge region in a plasma shielding portion and an edge region in a substrate support portion disposed in a lower region of the substrate, And the magnetic force of the magnet member can be used together to prevent plasma infiltration, thereby preventing thin film damage in the central region of the substrate and improving the plasma density of the substrate edge region, thereby further enhancing the plasma processing efficiency.

Magnet, Magnetic, Inert Gas, Edge Etch, Plasma

Description

TECHNICAL FIELD [0001] The present invention relates to a plasma shielding assembly and a plasma processing apparatus having the plasma shielding assembly.

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a plasma shielding assembly and a plasma processing apparatus having the plasma shielding assembly. More particularly, the present invention relates to a plasma shielding assembly Shielding assembly and a plasma processing apparatus having the shielding assembly.

Semiconductor devices and flat panel displays are fabricated by thin film deposition and etching processes. That is, a deposition process is performed to form a thin film on a predetermined region of the substrate, and an etching process using an etching mask is performed to remove a part of the unnecessary thin film to form a desired predetermined circuit pattern or circuit element on the substrate .

However, since the thin film is formed on the entire surface of the substrate during the thin film process and the thin film formed on the center region of the substrate is used as the etching target during the etching process, the thin film remains in the edge region of the substrate without being removed. Also, in the etching process, a process by-product, for example, a particle is necessarily deposited. In addition, since the substrate is normally placed on the substrate supporting part for supporting the substrate by the electrostatic force or the vacuum force, the interface between the substrate and the substrate supporting part is spaced by a predetermined distance to generate a gap, And the deposited thin film and particles can be deposited. If a continuous process is performed without removing the particles and the deposited thin film on the substrate, many problems such as warping of the substrate and difficult alignment of the substrate may occur.

Therefore, recently, a plasma processing apparatus for etching and removing particles and deposited thin films existing in an edge region of a substrate has been developed. Such a plasma processing apparatus exposes an edge region of a substrate by placing the substrate on a substrate support portion having a diameter smaller than that of the substrate, and arranges upper and lower electrodes above and below the edge region of the substrate to generate plasma in an edge region of the exposed substrate. At this time, the distance between the plasma shielding portion provided in the upper region of the substrate and the substrate supporting portion is narrowed to shield plasma from flowing into the central region of the substrate. In addition, a gas injection hole is formed in the plasma shielding portion to inject the inert gas into the central region of the substrate, thereby further enhancing the plasma shielding efficiency. However, there has been a problem in that a thin film formed in the central region of the substrate is damaged due to the limitation of completely blocking the inflow of plasma by adjusting the gap between the plasma shielding portion and the substrate supporting portion and inert gas injection only. In order to maintain the injection pressure of the inert gas, the space between the plasma shielding part and the substrate must be narrowed. Therefore, it is difficult to adjust the distance between the upper and lower electrodes and the substrate.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a plasma processing apparatus and a plasma processing method, A plasma shielding assembly capable of preventing thin film damage in the central region of the substrate by preventing the inflow of plasma by using the inert gas injection pressure and the magnetic force of the magnet member together and improving the plasma density of the substrate edge region, And to provide a plasma processing apparatus having such a plasma processing apparatus.

According to an aspect of the present invention, there is provided a plasma shield assembly including a plasma shield plate disposed on one surface of a substrate placed inside a chamber, and a magnet member provided on an edge region of the plasma shield plate do.

The magnet member is preferably formed in a ring shape.

The plasma shielding plate may include a body portion having an injection port formed on a surface thereof for injecting an inert gas toward the substrate and a transfer path for guiding an external inert gas to the injection port.

Preferably, grooves are formed in the edges or corners of the upper surface or the lower surface of the body portion to insert the magnet member.

It is preferable that the magnet member is fixed by a filling member filled in the remaining space of the groove, or is fixed by a magnet cover covering at least the opening region of the groove.

According to another aspect of the present invention, there is provided a plasma processing apparatus comprising: a chamber for providing a reaction space; a substrate support disposed inside the chamber; a plasma And a magnet member provided in an edge region in the plasma shielding portion.

The substrate supporting part preferably includes a metal chuck for fixing the substrate and a supporting part for supporting the metal chuck. In this case, the metal chuck may be formed to be smaller than the diameter of the substrate so that an edge region of the substrate is exposed.

The present invention may further include a first electrode portion provided on an outer periphery of the substrate supporting portion and a second electrode portion provided on an outer periphery of the plasma shielding portion.

Preferably, the magnet member is installed in an edge region in a plasma shield corresponding to an adjacent region or an inner region thereof with reference to a boundary line between the central region and the edge region of the substrate.

The plasma shield may include a body portion having a nozzle formed on a surface thereof for spraying an inert gas toward the substrate and a transfer path for guiding an external inert gas to the nozzle, the chamber being formed therein.

It is preferable that a groove is formed in an edge or an edge of an upper surface or a lower surface of the body portion to insert the magnet member.

It is preferable that the magnet member is fixed by a filling member filled in the remaining space of the groove, or is fixed by a magnet cover covering at least the opening region of the groove.

The magnet cover may include a horizontal portion covering the lower surface of the plasma shield portion and a side wall portion bent upward from the edge of the horizontal portion to cover the side surface of the plasma shield portion.

It is preferable that the magnet cover is formed in a plate shape in which a plurality of ejection openings are formed in a central region or a ring shape in which a central region is removed.

It is preferable that the present invention further includes a second magnet member provided in an edge region of the substrate support portion opposite to the magnet member.

The present invention is characterized in that a magnet member is provided in an edge region in a plasma shield disposed in an upper region of a substrate or in an edge region in a plasma shield and an edge region in a substrate support disposed in a lower region of the substrate, It is possible to prevent the thin film damage in the central region of the substrate by blocking the plasma inflow by using the magnetic force of the member together and to further improve the plasma processing efficiency by improving the plasma density of the substrate edge region.

Further, since the present invention uses not only the jetting pressure of the inert gas injection but also the magnetic force of the magnet member, the plasma shielding effect is great. Accordingly, since the injection pressure of the inert gas can be kept lower, the interval between the plasma shielding portion and the substrate can be further widened, thereby facilitating the adjustment of the space between the upper and lower electrode portions and the substrate, have.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of other various forms of implementation, and that these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know completely. Like reference numerals refer to like elements throughout.

≪ Embodiment 1 >

Fig. 1 is a schematic view of a plasma processing apparatus according to a first embodiment of the present invention, Fig. 2 is a plan view of the magnet member shown in Fig. 1, and Fig. 3 is an enlarged view of area A shown in Fig.

Referring to FIGS. 1 and 2, the plasma processing apparatus according to the first embodiment of the present invention includes a chamber 110 for providing an airtight reaction space, a substrate support (not shown) installed in a lower region of the chamber 110, And a plasma shielding part 150 installed in an upper region of the chamber 110 so as to face the substrate supporting part 120. The plasma shielding part 150 may be formed on the upper surface of the substrate supporting part 120, An upper electrode part 130 provided around the outer periphery of the plasma shielding part 150 and a magnet member 160 installed in an edge area of the plasma shielding part 150.

Here, a substrate 10 or a wafer (hereinafter collectively referred to as "substrate") on which a thin film is formed is placed on the upper surface of the substrate support 120, for example, where a plasma treatment is required. The plasma processing apparatus according to the first embodiment of the present invention injects an inert gas onto the upper surface of the substrate 10 through the plasma shielding part 150. An inert gas supply unit 171 for supplying an inert gas to the plasma shielding unit 150 and an inert gas supply unit 171 for supplying an inert gas to the plasma shielding unit 150. The plasma shielding unit 150 includes a plasma shielding part 150 having a plurality of ejection openings formed in the direction of the substrate 10, And a plasma shield assembly including an upper electrode 130 disposed around the periphery. Of course, the upper electrode 130 may be provided separately from the plasma shield assembly. The upper and lower electrode units 130 and 140 are preferably disposed in the upper and lower regions adjacent to the edge region of the substrate 10 so that plasma is generated in the edge region of the substrate 10. [

The chamber 110 includes a chamber body 110a having a predetermined space therein and a chamber lid 110b covering the chamber body 110a. The chamber body 110a is formed in a cylindrical shape with an open top. Of course, the inner shape of the chamber body 110a may be variously changed depending on the shape of the substrate. The chamber lid 110b serves to cover the upper portion of the chamber body 110a and is hermetically connected to the upper portion of the chamber body 110a to form an airtight reaction space in the chamber 110. [ The chamber lid 110b is installed to be openable and closable with the chamber body 110a. This makes it easy to perform maintenance such as cleaning of the reaction space provided in the chamber 110 and replacement of consumables.

The upper wall of the chamber 110 has a first through hole 111 through which a plasma shielding part 150 is mounted, and an inlet 112 through which a process gas flows is formed in the peripheral part. The inlet 112 is connected to a process gas supply unit 172 provided outside the chamber 110 through a separate inlet pipe. A second through hole 113 is formed in the lower wall of the chamber 110 to connect the elevating part 180 to move the substrate supporting part 120. The gas inside the chamber 100 is exhausted to the peripheral part of the second through hole 113, An exhaust port 114 is formed. The exhaust port 114 is connected to a gas exhaust unit 173 provided outside the chamber 110 through a separate exhaust pipe. In addition, a gate 115 is formed on one side wall of the chamber 110 for loading and unloading the substrate 10. In the chamber 110 according to the present embodiment, the gate 115 is formed only on one side wall, but a gate may be formed on the other side wall of the chamber 110 facing the gate 115. At this time, it is preferable that one gate is used when carrying the substrate 10 to be processed and the other gate is used when carrying out the processed substrate 10. [ Of course, the formation positions of the inlet 112, the exhaust port 114, and the gate 115 may be variously changed.

The substrate support 120 includes a metal chuck 121 for fixing the substrate 10 and a support 122 for supporting the metal chuck 121. The metal chuck 121 according to the present embodiment is formed in the shape of a circular plate and functions as an RF electrode 191 receiving a RF power through the power supply unit 190. The power supply unit 190 includes an RF generator 191 for generating RF power and an impedance matching unit 192 for impedance matching the RF power to the load of the RF electrode 121 .

The metal chuck 121 is formed of a conductive material to function as an RF electrode. However, the present invention is not limited thereto, and the metal chuck 121 may be formed of an insulating material, for example, ceramic, and an RF electrode formed of a conductive material may be provided on the upper surface of the metal chuck 121. The RF electrode may include a main electrode provided in a central region thereof and a plurality of electrodes spaced apart from the main electrode and including a sub electrode provided in an outer region surrounding the central region, The main electrode may be formed in a circular plate shape, and the sub electrode may be formed in a ring shape along the main electrode. The diameter of the metal chuck 121 is smaller than the diameter of the substrate 10 so that the edge region of the substrate 10 is exposed and the diameter of the support 122 is less than the diameter of the metal chuck 121 It is preferable that it is formed largely. Of course, the diameter of the support portion 122 may be larger than the diameter of the substrate 10. Accordingly, a predetermined space is formed below the edge region of the substrate 10 located on the metal chuck 121, and the plasma can freely flow into the space, so that the etching on the lower side of the edge region of the substrate 10 is performed smoothly . Meanwhile, it is preferable that the metal chuck be fixed to the substrate 10 by using an electrostatic force. However, the substrate 10 is not limited thereto, and the substrate 10 may be fixed using vacuum force or mechanical force. At this time, if electrostatic force is used, it is preferable to further form a polyimide film on the surface of the RF electrode.

The cooling pipe 123 is embedded in the support part 122 to circulate the coolant, thereby maintaining the temperature of the substrate 10 constant. Of course, various heating means such as an electric heater, a lamp heater, and the like may be provided in the support portion 122 instead of the cooling means. In addition, the cooling means and the heating means may be provided outside the supporting portion 122, for example, outside the substrate supporting portion 120. One side of the support part 122 may be coupled to at least one of the known driving means and the rotation driving means to control the plasma efficiency by adjusting the vertical position of the substrate support part 120, The entire surface of the substrate 10 can be controlled so as to be uniformly exposed to the plasma by rotating the substrate supporting unit 120. For example, the supporting part 122 of the substrate supporting part 120 according to the present embodiment is preferably connected to the elevating rod 182 driven by the elevating driving part 181 to adjust its vertical position.

The lower electrode part 140 is formed in a ring shape and is provided around the periphery of the substrate supporting part 120. The lower electrode part 140 is provided around the outer periphery of the seating part 141 on which the substrate supporting part 120 is seated to form a side wall having a predetermined height. At this time, an insulating member 124 is provided around the side surface of the substrate supporting part 120 for insulation between the substrate supporting part 120 and the lower electrode part 140, and an insulating member 142 is formed on the upper surface of the mounting part 141. [ .

The plasma shielding part 150 includes a body part 150a having an injection port 151 for injecting inert gas and a transfer path 152 for guiding an inert gas outside the chamber 110 to the injection port 151, And a coupling portion 150b coupling the body portion 150a to the upper wall inside the chamber 110. [ Here, the ejection openings 151 are opened toward the substrate 10, and are uniformly formed corresponding to the central region of the substrate 10. The inert gas supplied from the inert gas supply unit 171 is guided into the chamber 110 through the transfer path 152 and is injected into the central region of the substrate 10 through the injection port 151. [ The injected inert gas acts as a kind of gas curtain which blocks the plasma generated in the edge region of the substrate 10 from flowing into the central region of the substrate 10. [ In addition, the cooling pipe 153 is embedded in the body portion 150a of the plasma shielding portion 150 to circulate the coolant, thereby keeping the process temperature inside the chamber 110 constant. Of course, various heating means such as an electric heater, a lamp heater, and the like may be provided in the body portion 150a of the plasma shielding portion 150 instead of the above-mentioned cooling means. Meanwhile, the body portion 150a of the plasma shielding portion 150 may be formed of an insulating material, for example, ceramic.

The upper electrode unit 130 is formed in a ring shape and is provided on the outer periphery of the plasma shielding unit 150 and is disposed to face the lower electrode unit 140 provided under the edge region of the substrate 10. The upper and lower electrode units 130 and 140 generate plasma in an edge region of the substrate 10 together with the substrate supporting unit 120 to which RF power is supplied by supplying ground power. Accordingly, it is preferable that the upper and lower electrode units 130 and 142 are formed in various shapes such as a circular ring, an elliptical ring, or a polygonal ring depending on the shape of the substrate 10. [ The surface of the chamber 110, the RF electrode 121, and the upper and lower electrode units 130 and 140 may be anodized to prevent plasma corrosion. For example, if the base material is aluminum, its surface may be coated with aluminum oxide.

Meanwhile, a magnet member 160 is installed in the edge region of the plasma shielding part 150. More specifically, the magnet member 160 has a plasma shield (not shown) corresponding to its adjacent region or its inner region with respect to a boundary line BL between the central region CA and the edge region EA of the substrate 10 150). Here, the edge region EA means an outer peripheral region of the central region CA in which a desired thin film pattern is formed and plasma shielding is required. Referring to FIG. 2, the magnet member 160 according to the present embodiment is manufactured in a ring shape, and uses a permanent magnet having an N pole at the top and an S pole at the bottom. Of course, a permanent magnet having a polarity opposite to that of the magnet member 160 may be used. 3, the magnetic field F _M generated by the magnet member 160 is formed to be directed downward from the upper portion of the substrate 10, and the substrate supporting portion 120, the upper electrode portion 130, The electric field F _E generated by the substrate supporting part 120 and the lower electrode part 140 is formed so as to be substantially directed from the center of the substrate 10 to the outer side so that the electrons in the plasma state generated in the edge area of the substrate 10 Ions and ions do not flow into the central region of the substrate 10 but remain in the edge region of the substrate 10 while performing circular motion along the direction of the magnetic field. Since the magnetic member 160 serves as a magnetic shield to prevent the plasma from flowing into the central region of the substrate 10 to increase the plasma density staying in the edge region of the substrate 10, The local etching rate for the edge region of the semiconductor substrate 10 can be further increased. In addition, since electrons or ions in a plasma state can not enter the central region of the substrate 10, the distance d between the plasma shielding portion 150 and the substrate 10 can be widened, Thereby improving the stability and usability of the equipment. In the following, various mounting structures of the above-described magnet member 160 will be described in more detail.

4 is a cross-sectional view of a plasma shield assembly in accordance with a first embodiment of the present invention.

Referring to FIG. 4, a ring-shaped groove 210 is formed in the body portion 150 of the plasma shielding portion 150 to open upward along the edge of the upper surface. A ring-shaped magnet member 160 is inserted into the groove 210 and the remaining space is filled with an insulating material 220 to fix the magnet member 160. At this time, the insulating material 220 is preferably made of the same material as that of the body portion 151 of the plasma shielding portion 150, but is not limited thereto, and various insulating materials may be used.

5 is a cross-sectional view of a plasma shield assembly according to a first variant of the present invention.

5, a ring-shaped groove 310 is formed in the body part 151 of the plasma shielding part 150 and is opened downward along the edge of the lower surface. The ring- Member 160 is inserted. The magnet member 160 is covered and fixed by a magnet cover 320 covering an opening area of the groove 310. The magnet cover 320 is fixed to the plasma shielding part 330 by a coupling member 330 such as a screw, (Not shown). Of course, the magnet cover 320 may be adhered to the lower surface of the plasma shield 150 by an adhesive member (not shown). The magnet cover 320 may be formed in a plate shape corresponding to the lower shape of the plasma shielding portion 150 and may be formed in a ring shape corresponding to the lower shape of the magnet member 160. If the magnet cover 320 is formed in a plate shape, it is preferable that the jetting port 321 is formed at the same position in the magnet cover 320 so that the jetting port of the plasma shielding portion 150 is not shielded.

6 is a cross-sectional view of a plasma shield assembly according to a second variation of the present invention.

6, a body-shaped portion 151 of the plasma shielding portion 150 is formed with a ring-shaped groove 410 opened downward along a corner of a lower surface thereof, and a ring- Member 160 is inserted. The magnet member 160 is covered and fixed by a magnet cover 420 covering an opening area of the groove 410. The magnet cover 420 is formed so as to cover at least the lower surface corner portion of the plasma shielding portion 150. A side wall part 422 bent upward from the edge of the horizontal part 421 and covering the side surface of the plasma shielding part 150, And the upper surface is formed as an open structure. At this time, the magnet cover 420 is preferably screwed to the plasma shielding part 150 through the side wall part 422, and the engaging member 430 exposed to the outside of the magnet cover 420 is connected to the plasma shielding part The upper electrode unit 140 may be shielded by the upper electrode unit 140 installed in the outer peripheral region of the electrode unit 150. Thus, corrosion of the coupling member 430 due to plasma exposure can be prevented. The horizontal portion 421 of the magnet cover 420 may be formed into a plate shape corresponding to the lower shape of the plasma shielding portion 150 and may be formed into a ring shape corresponding to the lower shape of the magnet member 160 It is possible. At this time, if the magnet cover 320 is formed in a plate shape, it is preferable that the jet opening 423 is formed at the same position in the magnet cover 420 so that the jet opening of the plasma shielding portion 150 is not shielded.

In the plasma processing apparatus according to this embodiment having such a configuration, when the substrate 10 on which a predetermined thin film is formed is carried into the chamber 110 and mounted on the upper surface of the substrate support 120, The chamber 173 is operated and the chamber 110 is evacuated to a vacuum state. The substrate support 120 is then raised so that no plasma is generated in the reaction space between the central region of the substrate 10 and the plasma shield 150 to maintain the distance d between the substrate 10 and the plasma shield 150 ). Thereafter, a process gas supply unit 172 operates to inject a process gas into the chamber 110 and RF power is applied to the RF electrode 121 to form a reaction space (not shown) between the substrate support unit 120 and the upper electrode unit 130 A plasma is generated in the reaction space between the substrate supporting portion 120 and the lower electrode portion 140 (the lower space of the edge region of the substrate 10). Due to the plasma, a thin film etching process is performed on the edge region of the substrate 10. At this time, the plasma shielding part 150 blocks the inflow of the plasma into the central area of the substrate 10 by forming the gas barrier film by injecting the inert gas into the central area of the substrate 10. In addition, the magnet member 160 provided at the edge region in the plasma shielding portion 150 forms a magnetic shielding film to block plasma from flowing into the central region of the substrate 10. [ This makes it possible to effectively etch the thin film formed in the edge region of the substrate 10 while minimizing damage to the thin film formed in the central region of the substrate 10.

≪ Embodiment 2 >

On the other hand, the above-described plasma processing apparatus is not limited to the above-described configuration, and various embodiments are possible. In the following, a plasma processing apparatus according to the second embodiment of the present invention will be described as an example of such a possibility. At this time, the description overlapping with the above-described embodiment will be omitted or briefly explained.

7 is a schematic diagram of a plasma processing apparatus according to a second embodiment of the present invention.

Referring to FIG. 7, the plasma processing apparatus according to the second embodiment of the present invention includes a chamber 110 providing an airtight reaction space, a substrate support 120 installed in a lower region inside the chamber 110, A lower electrode part 140 provided around the periphery of the substrate supporting part 120 and a plasma shielding part 150 installed in an upper area inside the chamber 110 so as to face the substrate supporting part 120; And an upper electrode unit 130 provided around the outer periphery of the plasma shielding unit 150. In particular, in order to block the plasma generated in the edge region of the substrate 10 from entering the central region of the substrate 10, a ring-shaped first magnet member 161 is formed in the edge region within the plasma shield 150, And a second magnet member 162 in the form of a ring is provided in the edge region of the substrate support 120 as well.

As described above, the first and second magnet members 161 and 162 are formed in the plasma shielding portion 150 corresponding to the adjacent region or the inner region thereof with reference to the boundary line between the central region and the edge region of the substrate 10 Edge region and an edge region within the substrate support 120. [0050] At this time, the first and second magnet members 161 and 162 provided at the upper and lower portions corresponding to the edge region of the substrate 10 serve as a kind of magnetic shielding film to block plasma from flowing into the central region of the substrate 10, 10 from being etched and increasing the plasma density staying in the edge region of the substrate 10 to increase the etching rate for the edge region of the substrate 10. [ As such, the plasma processing apparatus according to the present invention may be provided with a magnet member in an edge region in the plasma shielding portion 150, or an edge region in the plasma shielding portion 150 and an edge region in the substrate supporting portion 120.

In the plasma processing apparatus according to the above-described embodiment, the RF power is supplied to the electrode portion of the substrate supporting portion 120. However, the RF power may be supplied to only one of the upper and lower electrode portions 130 and 140, DC power may be supplied instead of RF power. In addition, the plasma processing apparatus according to the above-described embodiments can be used not only for a thin film etching process but also for various processes using plasma, for example, a thin film deposition process.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

1 is a schematic diagram of a plasma processing apparatus according to a first embodiment of the present invention.

2 is a plan view of the magnet member shown in Fig.

3 is an enlarged view of the area A shown in Fig.

4 is a cross-sectional view of a plasma shield assembly according to a first embodiment of the present invention;

5 is a cross-sectional view of a plasma shield assembly according to a first variation of the present invention.

6 is a cross-sectional view of a plasma shield assembly according to a second variation of the present invention;

7 is a schematic diagram of a plasma processing apparatus according to a second embodiment of the present invention.

Description of the Related Art

110: chamber 120: substrate support

130: upper electrode part 140: lower electrode part

150: Plasma shielding part 160: Magnet member

171: inert gas supply unit 172: process gas supply unit

173: gas exhaust part 180: lift driving part

190: Power supply

Claims (19)

A plasma shield disposed on one surface of a substrate placed inside a chamber having a chamber lid covering the chamber body; An upper electrode part provided on an outer periphery of the plasma shielding part; A groove formed on a lower surface of the plasma shield and opening downward in a region corresponding to an adjacent region or an inner region thereof with reference to a boundary line between a central region and an edge region of the substrate; A magnet member inserted into the groove; And And a magnet cover covering the opening region of the groove, The magnet cover A horizontal portion covering the lower surface of the plasma shield; And And a side wall part bent upwards from an edge of the horizontal part to cover the side surface of the plasma shielding part, The magnet cover is coupled to the plasma shield through the side wall portion by a coupling member, Wherein the coupling member is shielded by the upper electrode portion. The method according to claim 1, Wherein the magnet member is formed in a ring shape. Claim 1: Wherein the plasma shield comprises: And a body portion in which an injection port for injecting an inert gas in the direction of the substrate is formed on the surface and a transfer path for guiding an external inert gas to the injection port is formed inside the body. delete delete delete A chamber having a predetermined space and a chamber lid covering the chamber body to provide a reaction space; A substrate support disposed within the chamber and positioned to surround the substrate such that an edge region of the substrate is exposed; A plasma shield disposed within the chamber opposite to the substrate support and spaced apart from a surface of the substrate; An upper electrode part provided on an outer periphery of the plasma shielding part; A groove formed on a lower surface of the plasma shield and opened downward in a region corresponding to an adjacent region or an inner region thereof with respect to an interface between a central region and an edge region of the substrate; A magnet member inserted into the groove; And And a magnet cover covering the opening region of the groove, The magnet cover A horizontal portion covering the lower surface of the plasma shield; And And a side wall part bent upwards from an edge of the horizontal part to cover the side surface of the plasma shielding part, The magnet cover is coupled to the plasma shield through the side wall portion by a coupling member, And the coupling member is shielded by the upper electrode portion. The method of claim 7, The substrate- A metal chuck for fixing the substrate; And A support for supporting the metal chuck; And a plasma processing apparatus. The method of claim 8, Wherein the metal chuck is formed to be smaller than the diameter of the substrate so that an edge region of the substrate is exposed. The method of claim 7, And a lower electrode part provided on the outer periphery of the substrate supporting part. delete delete The method of claim 7, Wherein the plasma shield comprises: And a body portion in which an injection port for injecting an inert gas in the direction of the substrate is formed on the surface and a transfer path for guiding an external inert gas to the injection port is formed inside the body. delete delete delete delete The method of claim 7, Wherein the magnet cover is formed in a plate shape in which a plurality of ejection openings are formed in a central region or in a ring shape in which a central region is removed. The method of claim 7, And a second magnet member provided in an edge region of the substrate support portion opposite to the magnet member.

Images