KR20090053331A - Method for manufacturing thin film and apparatus for the same - Google Patents

Abstract

The present invention relates to a thin film manufacturing method and a thin film manufacturing apparatus for concealing various foreign substances formed on the back surface of a substrate such as a wafer on which a device having a predetermined thin film pattern is formed, comprising: preparing a substrate; Shielding the first surface of the substrate; And depositing a thin film on the second surface of the substrate, including depositing a uniform film on the surface where the substrate is required to be etched without etching to conceal foreign substances such as particles on the back surface of the substrate, and backing the substrate. Can be planarized to facilitate subsequent steps.

Thin film manufacturing apparatus, wafer, back of substrate, planarization

Description

Thin film manufacturing method and thin film manufacturing apparatus {Method for manufacturing thin film and apparatus for the same}

The present invention relates to a thin film manufacturing method and a thin film manufacturing apparatus, and more particularly, to a thin film manufacturing method and a thin film manufacturing apparatus for concealing various foreign substances formed on the back surface of the substrate, such as a wafer on which a device having a predetermined thin film pattern is formed. will be.

The semiconductor device or the flat panel display is formed by depositing and etching a plurality of thin films on a substrate. That is, a thin film is deposited on a central portion of a predetermined region of the substrate, and a portion of the thin film of the central portion of the substrate is removed through an etching process using an etching mask to manufacture a device having a predetermined thin film pattern.

However, when the thin film is deposited, a thin film is formed on the entire surface of the substrate, and during etching, the thin film at the center of the substrate is used as an etching target, so that the thin film is not removed at the edge of the substrate, and the edge of the substrate during the etching process is performed. Particles are deposited on the substrate. In addition, since the substrate support for supporting the substrate typically seats the substrate by electrostatic or vacuum force, the interface between the substrate and the substrate support is spaced a predetermined distance apart, thereby generating particles on the entire back surface of the substrate. And a thin film is deposited. Therefore, when the continuous process is performed without removing the particles and the deposited thin film present in the substrate, many problems, such as the substrate is bent or the alignment of the substrate becomes difficult.

In general, methods for removing the particles and the deposited thin film are known as wet etching to remove particles on the surface by immersion in a solvent or rinse, and dry cleaning to remove the surface by etching with plasma. Wet etching is effectively used to remove particles applied to the surface of the substrate, but it is difficult to manage the process locally, which makes it difficult to remove only the back side of the substrate, as well as cost increase due to the use of enormous chemicals and wastewater treatment. There is a problem that causes environmental problems, requires a long time processing, and the size of the equipment should be large. On the other hand, dry etching has an advantage of solving the above-described problem of wet etching by removing a thin film or particles on the substrate and the back surface using plasma. Therefore, in recent years, the development of a dry etching apparatus for etching such a substrate back is actively being performed.

However, in the dry etching as described above, at the same time as the back surface of the substrate is etched into the plasma, plasma is introduced onto the front surface of the substrate on which the thin film pattern or the like is formed, or the plasma is formed by gas discharge in the space to be etched. There is concern. Therefore, the etching of the front surface of the wafer has a disadvantage in that the yield of the final product is lowered and the defective rate is increased, or a separate means of protecting the front surface of the wafer from etching is required in order to prevent this. In addition, a problem may occur that the wafer back surface becomes uneven through etching of the back surface of the wafer, and there is a problem that a defect may be caused in a subsequent process and a yield may decrease due to the uneven wafer back surface.

The present invention has been made to solve the above problems, and by depositing a uniform film on the surface where the substrate is required to be etched, by hiding a foreign material such as particles on the back of the substrate, and flattening the back of the substrate An object of the present invention is to provide a thin film production method and a thin film production apparatus that facilitates subsequent steps.

The present invention comprises the steps of preparing a substrate; Shielding the first surface of the substrate; And depositing a thin film on the second surface of the substrate.

The shielding of the first surface of the substrate may include adjusting a gap between the substrate and the shielding part spaced apart from the substrate, and the gap may be 0.1 to 0.8 mm.

The method may further include spraying a first gas on the first surface of the substrate, wherein the first gas may be at least one selected from a group consisting of Group 18 elements and nitrogen.

In addition, a second gas is injected onto the second surface of the substrate, the second gas may be a gas including TEOS, and reactive or non-reactive to confine the second gas on the second surface of the substrate. And injecting a third gas.

In addition, depositing a thin film on the second surface of the substrate may include forming a plasma on the second surface of the substrate.

The depositing a thin film on the second surface of the substrate may include adjusting a gap between the substrate and an electrode forming the plasma, wherein the gap may be 10 to 30 mm.

Furthermore, the method may further include planarizing the second surface of the substrate on which the thin film is deposited.

The present invention, the chamber; A substrate support for supporting a substrate in the chamber; A shielding portion spaced apart from the substrate support in one direction of the substrate; An electrode spaced apart from the substrate support in the direction of the other surface of the substrate; And a power supply unit applying power to the electrode.

The power supply unit may be a high frequency power supply unit, and the shielding unit may be connected to ground.

In addition, the shielding unit may be provided with a first gas injection means for injecting a first gas, the second gas injection means for injecting a second gas generated by the plasma by the electrode may be provided, Third gas injection means for injecting a third gas constraining the two gases may be provided.

Here, the second gas injection means is provided on the electrode, the third gas injection means may be provided on the outer edge of the electrode or on the substrate support, preferably, the third gas injection means It may be inclined to face the second gas injection means.

The substrate support may support at least a portion of the outer edge portion of the substrate so that the other surface of the substrate is exposed in the electrode direction.

By the thin film manufacturing method and the thin film manufacturing apparatus according to the present invention as described above, by depositing a uniform film without performing etching on the surface where the etching of the substrate is required to conceal foreign substances such as particles on the back of the substrate, The planarization can be achieved to facilitate the subsequent process.

Hereinafter, a thin film manufacturing method and a thin film manufacturing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like reference numerals in the drawings refer to like elements.

1 is a cross-sectional view schematically showing a thin film manufacturing apparatus according to an embodiment of the present invention. Each drawing shown below including FIG. 1 is shown typically, and the magnitude | size and shape of each part are exaggerated and shown suitably for easy understanding.

Referring to FIG. 1, the thin film manufacturing apparatus 1 according to the exemplary embodiment of the present invention may be controlled to be spaced apart from the shield 30 and the shield 30 to which the first gas is injected, and the outer edge of the substrate 50. It is disposed apart from the substrate support 20 and the substrate support 20 for supporting the portion, the power supply 70 is applied and the second gas is injected to the substrate 50 supported by the substrate support 20 An electrode 40 for forming a plasma.

In the embodiment of the present invention, the thin film manufacturing apparatus 1 is a device for generating a reactive plasma and depositing a thin film on the back surface of a substrate 50 such as a wafer on which an element having a predetermined thin film pattern is formed.

The thin film manufacturing apparatus 1 includes the chamber 10 formed so that opening and closing is possible, and the normal vacuum exhaust system 60 communicated with this chamber 10.

A shield 30 is disposed above the chamber 10, and a heating coil 38 connected to the heating controller 37 is configured in the shield 30 to be heated, for example. In addition, the shielding portion 30 is formed with injection holes 33 for injecting non-reactive gas, the injection hole 33 is in communication with the supply hole 31 so that the non-reactive gas is supplied from the outside of the chamber 10 do. Preferably, the shield 30 has a plurality of injection holes 33 so that the non-reactive gas supplied from the outside of the chamber 10 through one supply hole 31 is sprayed as uniformly as possible over the entire surface of the sprayed surface. ) Is formed in a so-called shower head type, and a plurality of injection holes 33 may be branched from a supply hole 31 communicated with the inside of the shielding part 30. More preferably, the diameter of the injection hole 33 formed at a distance with respect to the portion in which the supply hole 31 is formed in the shielding portion 30 is larger than the diameter of the injection hole 33 formed at a short distance, so as to produce a non-reactive gas. It is possible to compensate for the pressure drop caused by the increase in the gas flow path during injection. In addition, the shield 30 may be a cooling passage for controlling the heating temperature therein, it is preferable that the ground connection. The gas supplied through the supply hole 31 of the shielding portion 30 may be hydrogen or an inert gas, and other non-reactive gases, ie, gases that do not react with the substrate front surface 51 and the substrate back surface 52. It may be.

Here, the substrate front surface 51 may be a surface on which a device having a predetermined thin film pattern is formed on a substrate 50 such as a wafer, or may be a surface on which other substrates 50 are not required to be deposited. The substrate 50 is spaced apart from the surface on which the injection hole 33 of the shielding portion 30 is formed by the substrate 50 so as to face the front surface 51 with the injection hole 33, and is supported by the substrate support 20. .

The substrate support 20 is configured such that an arm 21 extending from an upper portion of the chamber 10 supports the substrate 50, and the arm 21 includes driving means configured in the substrate support 20 outside the chamber 10. It is configured to be stretchable by (not shown). In order to maintain the vacuum tightness due to the configuration of the stretchable substrate support 20 by the drive means, the portion where the substrate support 20 exposed to the outside of the chamber 1 is connected to the drive means is composed of a stretchable bellows. It is preferable. The arm 21 of the substrate support 20 is formed so as to support only the outer edge of the substrate 50, and more specifically, only the outer edge of the substrate back surface 52 from below, and is connected to the driving means to move up and down. That is, the proximity of the shield 30, or can be moved in close proximity, so that the substrate 50 supported thereon also be placed in proximity or in contact with the shield 30. In this way, when only the outer edge of the substrate 50 is supported, unlike the risk of contact between the lift pin and the electrode in the lift pin method, the substrate support 20 without the risk of contact between the electrode and the substrate support means is used. By doing so, the possibility of generating an electrical discharge can be reduced. Here, the substrate back surface 52 may be the other surface of the surface on which the device having a predetermined thin film pattern on the substrate 50, such as a wafer, is formed, and other foreign substances such as particles of the substrate 50 may be present and concealed. It may be a surface on which planarization is required. By the lifting and lowering motion of the arm 21, the front surface 51 of the substrate 50 maintains a predetermined gap d that is variable with respect to the surface on which the non-reactive gas of the shielding portion 30 is injected. In addition, the substrate support 20 is preferably configured to be electrically floating in the thin film manufacturing apparatus 1 to be electrically non-interfering with other components, the substrate support 20 including the arm 21 Is made of an insulating material such as Al ₂ O ₃ to prevent damage to the substrate support 20 by an external electric shock. The substrate support 20 may be a substrate support 20 having a different structure depending on the chamber 10, the substrate 50, or process characteristics used in addition to the structure shown in FIG. 1.

The electrode 40 is disposed below the substrate support 20 at a predetermined interval from the substrate support 20. The electrode 40 is configured such that the power source 70 is applied, and has an injection hole 42 and an injection hole 46 through which a reactive gas is injected.

Similar to that in the shielding portion 30, the injection hole 42 is supplied with a reactive gas through a supply hole 41 communicating with it from a supply means 44 outside the chamber 1 so that the chamber 1 The substrate back surface 52 is configured in a so-called showerhead type to inject a reactive gas into the inside, and a uniform reactive gas is injected through the entire surface of the back surface 52 of the substrate 50 supported by the substrate support 20. A plurality is formed toward the direction. The injection hole 42 has a diameter of the injection hole 42 formed at a distance with respect to the portion where the supply hole 41 is formed is larger than the diameter of the injection hole 42 formed at a short distance, the gas movement path during the reactive gas injection It is desirable to be able to compensate for the pressure drop with the increase. In addition to such a configuration, the gas injection structure in the shield 30 or the electrode 40 can be variously changed as necessary.

On the other hand, the outer circumference of the electrode 40 may be provided with an insulating ring 43 for concentrating the plasma generated on the electrode 40. The insulating ring 43 may be made of an insulating material such as Al ₂ O ₃ .

The injection hole 46 is formed in a so-called nozzle type so that the reactive gas supplied from the separate supply means 45 is injected in the center axis of the electrode 40 or the center direction of the substrate 50 at the outer edge of the electrode 40. . In order that the reactive gas injected from the injection hole 42 does not diffuse beyond the plane outer edge of the electrode 40, that is, the reactive gas discharges only on the plane of the electrode 40 to improve the plasma generation efficiency. The gas pressure at 46 is preferably equal to or greater than the gas pressure at the injection hole 42. The reactive gas injected through the injection hole 42 and the injection hole 46 of the electrode 40 may include a tetraethyl orthosilicate (TEOS) source gas, and other elements that may be deposited on the other substrate back surface 52. It may be a gas containing. In addition, the injection port 46 may be injected with a non-reactive gas, such as inert gas. Which of the reactive gas or non-reactive gas is injected at the injection hole 46 may vary depending on the required process, and thus the injection pressure at the injection hole 46 may also vary. When the reactive gas is injected from the injection hole 46, the plasma generation efficiency of the exposed substrate back surface 52 may be further improved. When the non-reactive gas is injected, the reactive gas injected from the injection hole 42 may be discharged. Restraint efficiency can be improved. When the reactive gas is injected at the injection hole 46, the gas may not be injected at the injection hole 42 and may be used only as the reactive gas injected at the injection hole 46. When the injection pressure of the reactive gas is excessive, it may cause fluctuation of the substrate 50. Therefore, the reactive gas injected through the injection hole 42 and the injection hole 46 is the pressure of the reactive gas in the vicinity of the substrate 50. It is preferable to inject to be less than or equal to the pressure in the vicinity of the substrate 50 of the non-reactive gas to be injected through the injection hole 33 of the shield 30.

In addition, the electrode 40 is configured to be capable of lifting and lowering, similarly to that of the substrate support 20, by the driving means 49 separately configured outside the chamber 1, and supported by the substrate support 20. The distance D from the back 52 of the 50 to the electrode 40 is made variable. In order to maintain the vacuum tightness due to the configuration of the electrode 40 capable of moving up and down by the driving means 49, the portion where the electrode 40 is connected to the driving means 49 is preferably composed of a flexible bellows. Do.

In addition, a cooling passage 48 connected to the cooling water circulation means 47 configured outside the chamber 10 may be provided inside the electrode 40. The cooling water circulation means 47 at this time may be comprised as the same member as the cooling flow path which circulates cooling water to the shielding part 30.

The power source 70 connected to the electrode 40 may be a high frequency power having an integer multiple of 13.56 MHz, and other power sources may be used according to a desired process or device. At this time, the configuration of the high frequency power supply 70 connected to the electrode 40 includes a matching device. Due to the configuration of the electrode 40 to which the grounded shield 30 and the high frequency power supply 70 are connected, the shield 30 serves as an anode, and the electrode 40 serves as a cathode, and between the anode and the cathode. An alternating vibration of 13.56 MHz or 13.56 MHz is applied to the gas to improve the plasma generating efficiency.

2 is a diagram illustrating another example of FIG. 1.

In FIG. 2, a separate injection port 23 is provided on the arm 21 of the substrate support 20 as compared with that in FIG. 1. Similar to the injection hole 46 of the electrode 40, the injection hole 23 also injects a reactive gas or a non-reactive gas so that the reactive gas injected from the injection hole 42 does not diffuse beyond the plane outer edge of the electrode 40. That is, the reactive gas discharges only on the back surface of the electrode 40 to improve the plasma generation efficiency. At this time, the injection hole 23 may be disposed on the outer shell or the inner cabinet than the injection hole 46 of the electrode 40 in a plane, it is preferable to be disposed on the outer shell than the injection hole 42 in any case. In addition, similar to the injection hole 46 of the electrode 40, the injection hole 23 may be disposed in the center direction of the substrate 50, but may also be disposed vertically downward.

3 is a view schematically illustrating the flow of gas injected from the injection hole 42 and the injection hole 46.

As shown in FIG. 3, the reactive gas injected through the injection hole 42 forms a plasma between the electrode 40 and the substrate 50. In this case, the reactive gas injected through the injection hole 42 is a gas injected in the direction of the plasma formation region at the outer edge of the electrode 40. As a result, the plasma region may not be diffused in the outer circumferential direction of the electrode 40 and may be concentrated on the substrate back surface 52. Of course, the injection angle of the gas through the injection hole 46 may be variable according to the type of process required and the degree of process progress. The gas pressure P ₁ injected from the injection port 46 is preferably sufficient to limit the flow of the reactive gas injected from the injection hole 42 onto the electrode 40 only. In addition, the injection port 46 may inject a non-reactive gas such as an inert gas to reduce the non-reactive gas consumed in the process.

Hereinafter, the operation of the thin film manufacturing apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

4A to 4D are diagrams sequentially illustrating the operation of the thin film manufacturing apparatus according to the exemplary embodiment of the present invention. In particular, FIG. 4D illustrates the gas flow paths during substrate processing with arrows.

Operation of the thin film manufacturing apparatus in the embodiment of the present invention is a deposition method for generating a plasma to conceal the thin film and particles deposited on the back surface of the substrate 50, such as a wafer on which a device having a predetermined thin film pattern is formed.

Operation of the thin film manufacturing apparatus according to an embodiment of the present invention, the substrate mounting step for seating the substrate 50 on the substrate support 80 between the shield 30 and the electrode 40 in the thin film manufacturing apparatus 1 And a substrate fixing step of fixing the seated substrate 50, a first gas sprayed onto the first surface 51 of the fixed substrate 50, and a second gas on the second surface 52. And a gas processing step of spraying the gas and a substrate processing step of applying the power supply 70 to the injected second gas to form a plasma to process the second surface 52 of the substrate 50.

As shown in Figure 4a, the substrate 50 is introduced through the inlet provided separately in the chamber 1, it is seated on the substrate support (80). The substrate 50 supported on the substrate support 80 is disposed such that its front surface 51 faces the injection hole 33 of the shield 30 and the back surface 52 faces the injection hole 42 of the electrode. do. The substrate support 80 is in a retracted position with a gap d 'with respect to the shield 30, and the electrode 40 is also in a retracted position with a distance D "with respect to the shield 30. .

In FIG. 4A, unlike the configuration of FIGS. 1 to 3, the configuration of the substrate support 80 for supporting the substrate 50 in the lower part is adopted instead of the substrate support 20 for supporting the substrate 50 in the upper part. In any case, it should be noted that the present invention may be applied to other substrate support configurations other than the spirit of the present invention.

As shown in FIG. 4B, when the chamber 1 is sealed and a vacuum is formed through the opening and closing means 11, the substrate support 80 is moved upward by a driving means (not shown), so that the substrate front surface 51 and the shielding portion ( 30 makes a gap d (d <d '). As the substrate support 80 is raised to decrease the gap d between the shield 30 and the front surface 51 of the substrate, the distance D ″ between the electrode 40 and the substrate back surface 52 is also increased by the distance D. ') Widens.

Thereafter, as shown in FIG. 4C, the electrode 40 is also moved upward by the driving means 49 so that the substrate back surface 52 and the electrode 40 form a gap D (D <D '). The gap d between the shield 30 and the substrate 50 or the distance D between the substrate 50 and the electrode 40 may be determined by the substrate support 80 and the substrate 50 as described in the embodiment of the present invention. Not only by the lifting and lowering movement of the electrode 40, but also by the driving of at least two members of the shield 30, the substrate support 80 and the electrode 40, for this purpose, a separate Driving means may be provided. In addition, the distance D between the electrode 40 and the substrate back surface 52 does not necessarily need to be variable, and any distance D, D ', and D "is sufficient to generate a plasma within the distance D. As a result, the process may be performed after only the substrate support 80 is moved without moving the electrode 40. Of course, other than the intervals D, D ', and D ″ shown in the drawings. The spacing between the substrate support 80 and the electrode 40 may be variable according to the required process, chamber or substrate size, and may also be varied during the process.

Thereafter, as shown in FIG. 4D, after the non-reactive gas is first introduced through the shielding unit 30, the reactive gas is introduced through the electrode 40, and electric power is applied through the high frequency power supply 70 to generate the reactive gas plasma. Is generated. The plasma of the reactive gas is formed in the plasma generation region, and a deposition process is performed in which a thin film is deposited on the back surface 52 of the substrate. At this time, the plasma is formed in the gap D between the substrate back surface 52 and the electrode 40, and in the gap d between the shielding portion 30 and the substrate front surface 51, the non-plasma is introduced due to the inflow of non-reactive gas. Only gas flow in the state will exist. At this time, the gap d is preferably 0.1 to 0.8 mm. When the gap d is less than 0.1 mm, there is a possibility of contact with the shield 30 and it is necessary to maintain a gap d of 0.1 mm or more in order to perform a more stable process. In the gap d exceeding 0.8 mm, the pressure of the non-reactive gas decreases relatively, so that the plasma formed in the gap D may flow into the gap d and be deposited on the front surface 51 of the substrate. ) Is preferably 0.8 mm or less. In addition, in the gap exceeding 0.8 mm, the plasma of the non-reactive gas may proceed, so that the substrate front surface 51 may be deposited. In the gap d of 0.8 mm or less, the process pressure and The area where the plasma is not generated by the process voltage may be maintained. And it is preferable that the space | interval D is 10-30 mm. As the distance D decreases, the deposition rate increases and the uniformity decreases. On the contrary, as the distance D increases, the uniformity is improved but the deposition rate is lowered. Therefore, in order to ensure satisfactory deposition rate and uniformity, it is preferable to adjust the space | interval D. Therefore, in this invention, the space | interval D was adjusted to 10-30 mm.

In addition, the non-reactive gas injected from the shielding part 30 has a higher dielectric breakdown voltage than the reactive gas injected from the electrode 40, and it is preferable that plasma is not generated by the power applied to the electrode 40. The reactive gas injected from the electrode 40 may use a gas containing TEOS source gas, and a gas containing other elemental species may be used to control the thin film species deposited on the substrate back surface 52 used. . When the plasma is formed of the reactive gas containing TEOS, a TEOS film may be formed on the substrate back 52. The TEOS film thus formed conceals foreign substances such as particles on the substrate back surface 52 and forms a new flat surface as the TEOS film on the substrate back surface 52. At this time, by supplying heat energy to the substrate 50 as heating through the shielding portion 30, the TEOS film deposited on the substrate back 52 can be uniformly deposited, and the thin film structure of a more compact structure is possible. You can do that.

Meanwhile, the gas pressure P ₂ injected from the injection hole 42 of the electrode 40 is not greater than the gas pressure P ₁ injected from the injection hole 46 of the electrode 40, so that the injection is performed from the injection hole 42. Plasma by the reactive gas may be concentrated on the electrode 40. In addition, the gas pressure P ₃ of the non-reactive gas injected from the shielding part 30 is the gas pressure P ₂ injected from the injection hole 42 and the gas pressure P ₁ injected from the injection port 46 of the electrode 40. Not smaller than), it is possible to prevent the reactive gas from flowing into the gap d and further secure the concentration of the reactive gas plasma.

A separate confining magnetic field may be further formed to limit the plasma region, and the confining magnetic field may be formed of a permanent magnet, an electromagnet, or an induction magnetic field. In some cases, vibration of the ions in the plasma may be caused by magnetic force to further improve the plasma generation efficiency. In this case, the magnetic field may be formed differently according to the shape of the chamber 10, the substrate 50, the shield 30, or the electrode 40.

In addition, a power source 70 for applying power to the electrode 40 may be used in addition to a high frequency power source, a direct current, an alternating current, or the like, and a single pole or a bipolar pulse power source may be used. In this case, the electrical connection of the shield 30 or the electrode 40 may vary according to the power source used, and a separate member for applying power may be further provided.

When the deposition is completed, the power supply is stopped, the supply of reactive gas and non-reactive gas is cut off, and the by-products in the chamber 10 are removed through vacuum exhaust. When the deposition by-products are removed, the electrode 40 is lowered through the driving means 49, and the substrate 50 is removed from the shield 30 through the driving means of the substrate support 20. Thereafter, the vacuum is discarded, the opening and closing means 11 is opened, and the substrate 50 is taken out to complete the deposition process. In some cases, the method may further include planarizing the TEOS film formed on the drawn substrate 50, and more particularly, the back surface 52 of the drawn substrate by a high temperature process or the like.

The driving of the components of each process step is shown in FIG. 5.

First, in the atmospheric state of the thin film manufacturing apparatus 1, the board | substrate support 20 is located in the upper part of the shielding part 30 direction (S1). Subsequently, while injecting air into the chamber 10 through the purge valve, the substrate support 20 is lowered (S2), and an atmospheric pressure atmosphere is formed, and then the substrate 50 is introduced through the opening / closing means 11 (S3).

When the opening and closing means 11 is closed, the substrate support 20 is raised (S4). When a vacuum atmosphere is formed, an inert gas is introduced (S5), and the gap between the substrate 50 and the shield 30 is adjusted. (S6) and the gap is maintained (S7).

Thereafter, the process gas is introduced (S8) and the required process atmosphere is established (S9), and then a high frequency power is applied to perform the process (S10).

When the process is completed, the inflow of the process gas and the inert gas is blocked (S11), and the maintained gap is spaced apart through readjustment (S12).

When the separation of the gap is completed (S13), the purge valve is opened (S14), and the chamber 10 is in an atmospheric pressure atmosphere, and the substrate 50 is pulled out through the opening / closing means 11 (S15). The ball is formed (S16) and the substrate support 20 is raised to the standby position to wait the apparatus 1 or prepare for a subsequent process.

Although the technical spirit of the present invention has been described in detail according to the above-described preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

1 is a cross-sectional view schematically showing a thin film manufacturing apparatus according to an embodiment of the present invention,

2 is a view showing another example of FIG.

3 is a view schematically showing a gas flow in a thin film manufacturing apparatus according to an embodiment of the present invention,

4a to 4d are views sequentially showing the operation of the thin film manufacturing apparatus according to an embodiment of the present invention,

5 is a view showing the operation of the components of each process step.

<Explanation of symbols for the main parts of the drawings>

1 ... thin film manufacturing apparatus, 10 ... chamber,

20 ... substrate support, 30 ... shield,

40 ... electrode, 50 ... substrate.

Claims (22)

Preparing a substrate; Shielding the first surface of the substrate; And Depositing a thin film on the second surface of the substrate; Thin film manufacturing method comprising a. The method of claim 1, wherein the shielding of the first surface of the substrate comprises adjusting a gap between the substrate and a shielding portion spaced apart from the substrate. The method of claim 2, wherein the gap is 0.1 to 0.8 mm. The method of claim 1, further comprising injecting a first gas onto the first surface of the substrate. The method of claim 4, wherein the first gas is at least one selected from the group consisting of Group 18 elements and nitrogen. The method of claim 1, wherein the second gas is injected onto the second surface of the substrate. The method of claim 6, wherein the second gas is a gas including TEOS. The method of claim 6, further comprising a third gas injection step of constraining the second gas onto the second surface of the substrate. The method of claim 8, wherein the third gas is a reactive or non-reactive gas. The method of claim 1, wherein depositing the thin film on the second side of the substrate comprises forming a plasma on the second side of the substrate. The method of claim 1, wherein the depositing a thin film on the second surface of the substrate comprises adjusting a distance between the substrate and an electrode forming the plasma. The method of claim 11, wherein the gap is 10 to 30 mm. The method of claim 1, further comprising planarizing a second surface of the substrate on which the thin film is deposited. chamber; A substrate support for supporting a substrate in the chamber; A shielding portion spaced apart from the substrate support in one direction of the substrate; An electrode spaced apart from the substrate support in the direction of the other surface of the substrate; And A power supply unit applying power to the electrode; Thin film manufacturing apparatus comprising a. The thin film manufacturing apparatus of claim 14, wherein the power supply unit is a high frequency power supply unit, and the shielding unit is grounded. The thin film manufacturing apparatus of claim 14, wherein the shielding unit is provided with first gas injection means through which a first gas is injected. The thin film manufacturing apparatus according to claim 14, wherein second gas injection means for injecting a second gas generated by plasma by the electrode is provided. The thin film manufacturing apparatus according to claim 17, wherein the third gas injecting means into which the third gas constraining the second gas is injected is provided. The thin film manufacturing apparatus of claim 18, wherein the second gas injection means is provided at the electrode, and the third gas injection means is provided at an outer edge of the electrode. The thin film manufacturing apparatus according to claim 18, wherein the third gas injection means is provided on the substrate support. The thin film manufacturing apparatus according to claim 19 or 20, wherein the third gas injection means is inclined to face the second gas injection means. The thin film manufacturing apparatus of claim 14, wherein the substrate support supports at least a portion of the outer edge portion of the substrate so that the other surface of the substrate is exposed in the electrode direction.

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