JPS6481215A - Vapor growth apparatus - Google Patents

Vapor growth apparatus

Info

Publication number
JPS6481215A
JPS6481215A JP23960587A JP23960587A JPS6481215A JP S6481215 A JPS6481215 A JP S6481215A JP 23960587 A JP23960587 A JP 23960587A JP 23960587 A JP23960587 A JP 23960587A JP S6481215 A JPS6481215 A JP S6481215A
Authority
JP
Japan
Prior art keywords
tube
nozzle tube
gas
reaction gas
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23960587A
Other languages
Japanese (ja)
Inventor
Seiichi Shishiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23960587A priority Critical patent/JPS6481215A/en
Priority to DE88115622T priority patent/DE3885833T2/en
Priority to US07/247,850 priority patent/US4992301A/en
Priority to EP88115622A priority patent/EP0308946B1/en
Publication of JPS6481215A publication Critical patent/JPS6481215A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the uniformity of a film thickness between substrates, by providing a plurality of reaction gas blowoff holes in a longitudinal direction on the side of a nozzle tube and constituting such that a reaction gas may be introduced from about its center. CONSTITUTION:An apparatus comprises a stand 3 for supporting the apparatus, a reaction tube of a two-tube structure comprising an outer tube 1 and an inner tube 2, a substrate holder 4 for holding a single-crystal substrate 5, resistance heating ovens 6 and a nozzle tube 7 for supplying a reaction gas. The reaction gas is blown off from the nozzle tube 7 and exhausted from an outlet 9 through gas outlet holes 8. A gas supply port 10 of the nozzle tube 7 exists at the center in a vertical direction of the nozzle tube 7. Therefore, since gas flow blown off from many gas blowoff holes 10 provided on the nozzle tube 7 is constant independent of the position on the nozzle tube of the blowoff holes, the same reaction gas flow can be supplied to all of substrate crystals.
JP23960587A 1987-09-22 1987-09-22 Vapor growth apparatus Pending JPS6481215A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP23960587A JPS6481215A (en) 1987-09-22 1987-09-22 Vapor growth apparatus
DE88115622T DE3885833T2 (en) 1987-09-22 1988-09-22 Chemical vapor deposition apparatus for the production of high quality epitaxial layers with a uniform density.
US07/247,850 US4992301A (en) 1987-09-22 1988-09-22 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness
EP88115622A EP0308946B1 (en) 1987-09-22 1988-09-22 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23960587A JPS6481215A (en) 1987-09-22 1987-09-22 Vapor growth apparatus

Publications (1)

Publication Number Publication Date
JPS6481215A true JPS6481215A (en) 1989-03-27

Family

ID=17047237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23960587A Pending JPS6481215A (en) 1987-09-22 1987-09-22 Vapor growth apparatus

Country Status (1)

Country Link
JP (1) JPS6481215A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10149190B4 (en) * 2000-10-05 2007-04-19 Toyota Jidosha Kabushiki Kaisha, Toyota Device and method for roll control for a vehicle

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938375A (en) * 1982-08-26 1984-03-02 Canon Inc Plasma cvd device
JPS60113921A (en) * 1983-11-25 1985-06-20 Hitachi Ltd Method for vapor-phase reaction and device thereof
JPS63202016A (en) * 1987-02-18 1988-08-22 Hitachi Ltd Vapor growth apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5938375A (en) * 1982-08-26 1984-03-02 Canon Inc Plasma cvd device
JPS60113921A (en) * 1983-11-25 1985-06-20 Hitachi Ltd Method for vapor-phase reaction and device thereof
JPS63202016A (en) * 1987-02-18 1988-08-22 Hitachi Ltd Vapor growth apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10149190B4 (en) * 2000-10-05 2007-04-19 Toyota Jidosha Kabushiki Kaisha, Toyota Device and method for roll control for a vehicle

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