JPS6425985A - Reduced-pressure vapor growing device - Google Patents

Reduced-pressure vapor growing device

Info

Publication number
JPS6425985A
JPS6425985A JP18188687A JP18188687A JPS6425985A JP S6425985 A JPS6425985 A JP S6425985A JP 18188687 A JP18188687 A JP 18188687A JP 18188687 A JP18188687 A JP 18188687A JP S6425985 A JPS6425985 A JP S6425985A
Authority
JP
Japan
Prior art keywords
supporting base
light transmissive
substrate
transmissive supporting
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18188687A
Other languages
Japanese (ja)
Other versions
JPH0465148B2 (en
Inventor
Isamu Morisako
Kenji Numajiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP18188687A priority Critical patent/JPS6425985A/en
Publication of JPS6425985A publication Critical patent/JPS6425985A/en
Publication of JPH0465148B2 publication Critical patent/JPH0465148B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent a metallic film from being stuck on a light transmissive supporting base and to form the metallic film good in selectivity and reproducibility by constituting the titled device so that the light transmissive supporting base for placing a substrate in the reduced-pressure vapor growing device is forcedly cooled. CONSTITUTION:In a reduced-pressure vapor growing device provided with a light transmissive supporting base 5 placed with a substrate 4, a gas feed part 2 for feeding reactive gas for the substrate 4, a heating part provided with an infrared lamp 6 for subjecting the substrate 4 to radiation heating via the light transmissive supporting base 5 and an exhaust part 3, a mechanism for forcedly cooling the light transmissive supporting base 5 placed with the substrate 4 is provided. As the above-mentioned cooling mechanism, it is preferable that a cooling chamber 8 is brought into contact with the light transmissive supporting base 5 and provided and any one of inert gas, air and water having light transmission properties is fed (supply port 9 and discharge port 10) as a cooling medium into the cooling chamber 8.
JP18188687A 1987-07-20 1987-07-20 Reduced-pressure vapor growing device Granted JPS6425985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18188687A JPS6425985A (en) 1987-07-20 1987-07-20 Reduced-pressure vapor growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18188687A JPS6425985A (en) 1987-07-20 1987-07-20 Reduced-pressure vapor growing device

Publications (2)

Publication Number Publication Date
JPS6425985A true JPS6425985A (en) 1989-01-27
JPH0465148B2 JPH0465148B2 (en) 1992-10-19

Family

ID=16108595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18188687A Granted JPS6425985A (en) 1987-07-20 1987-07-20 Reduced-pressure vapor growing device

Country Status (1)

Country Link
JP (1) JPS6425985A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995028002A1 (en) * 1994-04-08 1995-10-19 Hitachi, Ltd. Method and device for processing semiconductor wafer
WO1999043022A1 (en) * 1998-02-23 1999-08-26 Applied Materials, Inc. Thermal cycling module and process using radiant heat
US5951774A (en) * 1995-01-27 1999-09-14 Nec Corporation Cold-wall operated vapor-phase growth system
US7740703B2 (en) * 2003-03-18 2010-06-22 Hitachi Cable, Ltd. Semiconductor film formation device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995028002A1 (en) * 1994-04-08 1995-10-19 Hitachi, Ltd. Method and device for processing semiconductor wafer
US5951774A (en) * 1995-01-27 1999-09-14 Nec Corporation Cold-wall operated vapor-phase growth system
WO1999043022A1 (en) * 1998-02-23 1999-08-26 Applied Materials, Inc. Thermal cycling module and process using radiant heat
US7740703B2 (en) * 2003-03-18 2010-06-22 Hitachi Cable, Ltd. Semiconductor film formation device

Also Published As

Publication number Publication date
JPH0465148B2 (en) 1992-10-19

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