JPS6425985A - Reduced-pressure vapor growing device - Google Patents
Reduced-pressure vapor growing deviceInfo
- Publication number
- JPS6425985A JPS6425985A JP18188687A JP18188687A JPS6425985A JP S6425985 A JPS6425985 A JP S6425985A JP 18188687 A JP18188687 A JP 18188687A JP 18188687 A JP18188687 A JP 18188687A JP S6425985 A JPS6425985 A JP S6425985A
- Authority
- JP
- Japan
- Prior art keywords
- supporting base
- light transmissive
- substrate
- transmissive supporting
- reduced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent a metallic film from being stuck on a light transmissive supporting base and to form the metallic film good in selectivity and reproducibility by constituting the titled device so that the light transmissive supporting base for placing a substrate in the reduced-pressure vapor growing device is forcedly cooled. CONSTITUTION:In a reduced-pressure vapor growing device provided with a light transmissive supporting base 5 placed with a substrate 4, a gas feed part 2 for feeding reactive gas for the substrate 4, a heating part provided with an infrared lamp 6 for subjecting the substrate 4 to radiation heating via the light transmissive supporting base 5 and an exhaust part 3, a mechanism for forcedly cooling the light transmissive supporting base 5 placed with the substrate 4 is provided. As the above-mentioned cooling mechanism, it is preferable that a cooling chamber 8 is brought into contact with the light transmissive supporting base 5 and provided and any one of inert gas, air and water having light transmission properties is fed (supply port 9 and discharge port 10) as a cooling medium into the cooling chamber 8.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18188687A JPS6425985A (en) | 1987-07-20 | 1987-07-20 | Reduced-pressure vapor growing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18188687A JPS6425985A (en) | 1987-07-20 | 1987-07-20 | Reduced-pressure vapor growing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6425985A true JPS6425985A (en) | 1989-01-27 |
JPH0465148B2 JPH0465148B2 (en) | 1992-10-19 |
Family
ID=16108595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18188687A Granted JPS6425985A (en) | 1987-07-20 | 1987-07-20 | Reduced-pressure vapor growing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425985A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995028002A1 (en) * | 1994-04-08 | 1995-10-19 | Hitachi, Ltd. | Method and device for processing semiconductor wafer |
WO1999043022A1 (en) * | 1998-02-23 | 1999-08-26 | Applied Materials, Inc. | Thermal cycling module and process using radiant heat |
US5951774A (en) * | 1995-01-27 | 1999-09-14 | Nec Corporation | Cold-wall operated vapor-phase growth system |
US7740703B2 (en) * | 2003-03-18 | 2010-06-22 | Hitachi Cable, Ltd. | Semiconductor film formation device |
-
1987
- 1987-07-20 JP JP18188687A patent/JPS6425985A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995028002A1 (en) * | 1994-04-08 | 1995-10-19 | Hitachi, Ltd. | Method and device for processing semiconductor wafer |
US5951774A (en) * | 1995-01-27 | 1999-09-14 | Nec Corporation | Cold-wall operated vapor-phase growth system |
WO1999043022A1 (en) * | 1998-02-23 | 1999-08-26 | Applied Materials, Inc. | Thermal cycling module and process using radiant heat |
US7740703B2 (en) * | 2003-03-18 | 2010-06-22 | Hitachi Cable, Ltd. | Semiconductor film formation device |
Also Published As
Publication number | Publication date |
---|---|
JPH0465148B2 (en) | 1992-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071019 Year of fee payment: 15 |