JPS648631A - Cleaning of semiconductor surface - Google Patents

Cleaning of semiconductor surface

Info

Publication number
JPS648631A
JPS648631A JP16355487A JP16355487A JPS648631A JP S648631 A JPS648631 A JP S648631A JP 16355487 A JP16355487 A JP 16355487A JP 16355487 A JP16355487 A JP 16355487A JP S648631 A JPS648631 A JP S648631A
Authority
JP
Japan
Prior art keywords
substrate
bond
epitaxial growth
energy
evacuated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16355487A
Other languages
Japanese (ja)
Inventor
Yasuo Nara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16355487A priority Critical patent/JPS648631A/en
Publication of JPS648631A publication Critical patent/JPS648631A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To clean a semiconductor surface at a low temperature by irradiating it with a light having the same energy as the bond energy of impurity atoms or impurity atoms and semiconductor constituent atoms to dissociate the bond. CONSTITUTION:The surface of a silicon substrate crystal 12 is irradiated with light 11 spectrally separated in coincidence with the energy of a bond to be dissociated from SOR radiated from an electron storage ring. A substrate holder 13 having a heating mechanism can heat a substrate as required. The substrate 12 and the holder 13 are placed in a reaction chamber 14 so designed as to be evacuated in high vacuum by a vacuum evacuator 15. A gas introduction system 16 controls to introduce various gases necessary for an epitaxial growth into the chamber 14. When the surface of the substrate 12 is cleaned, the system is evacuated in high vacuum, and the substrate may be heated. After it is cleaned, epitaxial growth gas, such as silane is fed from the system 16, a substrate temperature is set to a suitable value, and epitaxial growth is performed.
JP16355487A 1987-06-30 1987-06-30 Cleaning of semiconductor surface Pending JPS648631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16355487A JPS648631A (en) 1987-06-30 1987-06-30 Cleaning of semiconductor surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16355487A JPS648631A (en) 1987-06-30 1987-06-30 Cleaning of semiconductor surface

Publications (1)

Publication Number Publication Date
JPS648631A true JPS648631A (en) 1989-01-12

Family

ID=15776103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16355487A Pending JPS648631A (en) 1987-06-30 1987-06-30 Cleaning of semiconductor surface

Country Status (1)

Country Link
JP (1) JPS648631A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948161A (en) * 1994-03-25 1999-09-07 Mitsubishi Denki Kabushiki Kaisha Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5948161A (en) * 1994-03-25 1999-09-07 Mitsubishi Denki Kabushiki Kaisha Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface

Similar Documents

Publication Publication Date Title
US5151296A (en) Method for forming polycrystalline film by chemical vapor deposition process
GB2163000B (en) Apparatus for forming crystal of semiconductor
EP0393809A3 (en) Pressure resistant thermal reactor system for semiconductor processing
JPS55110032A (en) Method for high-frequency heated epitaxial growth
EP1001454A3 (en) Surface treatment method and surface treatment apparatus
JPS648631A (en) Cleaning of semiconductor surface
JPS55151328A (en) Method and apparatus for fabricating hydrogen-containing amorphous semiconductor film
JPS6436085A (en) Method and apparatus for forming functional deposition film by microwave plasma cvd method
JPS577923A (en) Manufacture of receiving table for processing single silicon crystal wafer
JPS5694750A (en) Heating treatment device
TW350981B (en) Method and system for plasma-processing
JPS5467377A (en) Plasma processing apparatus
JPS57112033A (en) Unit for chemical vapor growth
JPS6423538A (en) Method and equipment for manufacturing semiconductor device
JPS57136932A (en) Photochemical reaction device
JPS6411323A (en) Semiconductor manufacturing device
JPS57166309A (en) Production of amorphous silicon
JPS5727914A (en) Manufacture of thin silicon carbide film
Strümpler et al. Decomposition of diethylarsine on Si (100) surfaces: a HREELS study
JPH01260827A (en) Surface treatment of semiconductor substrate
JPS6441210A (en) Manufacture of sic thin-film
JPS5681924A (en) Susceptor for vertical type high frequency heating vapor phase growing system
JPS6235512A (en) Manufacture of single crystal thin film of semiconductor
RU95117825A (en) METHOD FOR PROCESSING SEMICONDUCTORS
JPS56109895A (en) Gaseous phase growing method for semiconductor