JPS648631A - Cleaning of semiconductor surface - Google Patents
Cleaning of semiconductor surfaceInfo
- Publication number
- JPS648631A JPS648631A JP16355487A JP16355487A JPS648631A JP S648631 A JPS648631 A JP S648631A JP 16355487 A JP16355487 A JP 16355487A JP 16355487 A JP16355487 A JP 16355487A JP S648631 A JPS648631 A JP S648631A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- bond
- epitaxial growth
- energy
- evacuated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cleaning In General (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
PURPOSE:To clean a semiconductor surface at a low temperature by irradiating it with a light having the same energy as the bond energy of impurity atoms or impurity atoms and semiconductor constituent atoms to dissociate the bond. CONSTITUTION:The surface of a silicon substrate crystal 12 is irradiated with light 11 spectrally separated in coincidence with the energy of a bond to be dissociated from SOR radiated from an electron storage ring. A substrate holder 13 having a heating mechanism can heat a substrate as required. The substrate 12 and the holder 13 are placed in a reaction chamber 14 so designed as to be evacuated in high vacuum by a vacuum evacuator 15. A gas introduction system 16 controls to introduce various gases necessary for an epitaxial growth into the chamber 14. When the surface of the substrate 12 is cleaned, the system is evacuated in high vacuum, and the substrate may be heated. After it is cleaned, epitaxial growth gas, such as silane is fed from the system 16, a substrate temperature is set to a suitable value, and epitaxial growth is performed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16355487A JPS648631A (en) | 1987-06-30 | 1987-06-30 | Cleaning of semiconductor surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16355487A JPS648631A (en) | 1987-06-30 | 1987-06-30 | Cleaning of semiconductor surface |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS648631A true JPS648631A (en) | 1989-01-12 |
Family
ID=15776103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16355487A Pending JPS648631A (en) | 1987-06-30 | 1987-06-30 | Cleaning of semiconductor surface |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS648631A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5948161A (en) * | 1994-03-25 | 1999-09-07 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface |
-
1987
- 1987-06-30 JP JP16355487A patent/JPS648631A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5948161A (en) * | 1994-03-25 | 1999-09-07 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface |
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