JPS57166309A - Production of amorphous silicon - Google Patents

Production of amorphous silicon

Info

Publication number
JPS57166309A
JPS57166309A JP4858681A JP4858681A JPS57166309A JP S57166309 A JPS57166309 A JP S57166309A JP 4858681 A JP4858681 A JP 4858681A JP 4858681 A JP4858681 A JP 4858681A JP S57166309 A JPS57166309 A JP S57166309A
Authority
JP
Japan
Prior art keywords
film
amorphous silicon
silicon film
amorphous
remove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4858681A
Other languages
Japanese (ja)
Other versions
JPH0219185B2 (en
Inventor
Junji Sakurai
Yoshimi Shiotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4858681A priority Critical patent/JPS57166309A/en
Publication of JPS57166309A publication Critical patent/JPS57166309A/en
Publication of JPH0219185B2 publication Critical patent/JPH0219185B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:An amorphous silicon film formed with plasma is irradiated with energy rays to remove the hydrogen gas remaining in the film, thus giving an amorphous silicon film with good low-temperature properties. CONSTITUTION:SiH4 and Ar gas are sent from inlet 2 into the vacuum vessel 1 and the earthed support 5 bearing species 6, 6' on the top surface is heated with the heater 14, e.g., up to about 300 deg.C. The electrode 7 above the support 5 is connected to a high-frequency generator 8 to generate plasma and grow an amorphous film 13 on the SiO2 film 12 on the silicon base plate 11. Then, raster scanning is effected several times on the species 6, 6' with CW-Ar laser in an nitrogen atmosphere to remove hydrogen occluded in the polysilicon film. The amorphous silicon film treated in this manner is very stable, because it does not peel off even at the following heat treatments exceeding 600 deg.C.
JP4858681A 1981-03-31 1981-03-31 Production of amorphous silicon Granted JPS57166309A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4858681A JPS57166309A (en) 1981-03-31 1981-03-31 Production of amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4858681A JPS57166309A (en) 1981-03-31 1981-03-31 Production of amorphous silicon

Publications (2)

Publication Number Publication Date
JPS57166309A true JPS57166309A (en) 1982-10-13
JPH0219185B2 JPH0219185B2 (en) 1990-04-27

Family

ID=12807498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4858681A Granted JPS57166309A (en) 1981-03-31 1981-03-31 Production of amorphous silicon

Country Status (1)

Country Link
JP (1) JPS57166309A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06236155A (en) * 1993-02-10 1994-08-23 Yanagibashi Jimusho Kk In-vehicle moving advertising device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5623748A (en) * 1979-08-05 1981-03-06 Shunpei Yamazaki Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5623748A (en) * 1979-08-05 1981-03-06 Shunpei Yamazaki Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0219185B2 (en) 1990-04-27

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