JPS57202729A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57202729A
JPS57202729A JP8779981A JP8779981A JPS57202729A JP S57202729 A JPS57202729 A JP S57202729A JP 8779981 A JP8779981 A JP 8779981A JP 8779981 A JP8779981 A JP 8779981A JP S57202729 A JPS57202729 A JP S57202729A
Authority
JP
Japan
Prior art keywords
substrate
impurity
stand
shallow
outside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8779981A
Other languages
Japanese (ja)
Other versions
JPH0335825B2 (en
Inventor
Tadashi Nishimura
Hideaki Arima
Masahiro Yoneda
Hayaaki Fukumoto
Katsuhiro Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8779981A priority Critical patent/JPS57202729A/en
Priority to DE19823221180 priority patent/DE3221180A1/en
Priority to US06/385,137 priority patent/US4465529A/en
Publication of JPS57202729A publication Critical patent/JPS57202729A/en
Publication of JPH0335825B2 publication Critical patent/JPH0335825B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Abstract

PURPOSE:To obtain a shallow junction by low-temperature treatment by a method wherein a semiconductor substrate exposed a part of the substrate is placed in the gas plasma of a desired impurity and local voltage drop or voltage rise is selfishly formed on the substrate and the formation of a high-density impurity layers is performed. CONSTITUTION:A single crystal Si substrate 1 having openings at an insulating layer on the surface of the substrate is accommodated in an enclosed container 2 induced gas having the component of a vacuum and required impurity and is held on a stand 3 for heating at about 500 deg.C. The stand 3 can be grounded or insulated from the outside. The substrate 1 is negatively charged by operating a filament 4 mounted on a tank. The impurity under plasma condition generated between high-frequency electrodes 5, 6 cancels the charged condition of the substrate and deposited on the substrate as well. The impurity is simultaneously aimed by laser 7 from the outside and is reacted and diffused at the surface. In this composition, very shallow and high-density impurity layers can be obtained at desired opening sections only and no defects are provided in the substrate to eliminate heat treatment for recovery and a shallow junction can easily be obtained.
JP8779981A 1981-06-05 1981-06-05 Manufacture of semiconductor device Granted JPS57202729A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8779981A JPS57202729A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device
DE19823221180 DE3221180A1 (en) 1981-06-05 1982-06-04 METHOD AND DEVICE FOR PRODUCING A SEMICONDUCTOR DEVICE
US06/385,137 US4465529A (en) 1981-06-05 1982-06-04 Method of producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8779981A JPS57202729A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57202729A true JPS57202729A (en) 1982-12-11
JPH0335825B2 JPH0335825B2 (en) 1991-05-29

Family

ID=13925021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8779981A Granted JPS57202729A (en) 1981-06-05 1981-06-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57202729A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411323A (en) * 1987-07-03 1989-01-13 Sony Corp Semiconductor manufacturing device
JPH02222545A (en) * 1989-02-23 1990-09-05 Semiconductor Energy Lab Co Ltd Manufacture of thin film transistor
JPH02224341A (en) * 1989-02-27 1990-09-06 Semiconductor Energy Lab Co Ltd Formation of thin film transistor
JPH05102055A (en) * 1991-10-08 1993-04-23 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor chip
US5938839A (en) * 1991-10-04 1999-08-17 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
WO2002047138A1 (en) * 2000-12-07 2002-06-13 Sony Corporation Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element
KR100464653B1 (en) * 2002-12-09 2005-01-03 주식회사 하이닉스반도체 Electron beam curing equipment using dielectric barrier discharge plasma source
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6411323A (en) * 1987-07-03 1989-01-13 Sony Corp Semiconductor manufacturing device
JPH02222545A (en) * 1989-02-23 1990-09-05 Semiconductor Energy Lab Co Ltd Manufacture of thin film transistor
JPH02224341A (en) * 1989-02-27 1990-09-06 Semiconductor Energy Lab Co Ltd Formation of thin film transistor
US6660575B1 (en) 1991-10-04 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US5938839A (en) * 1991-10-04 1999-08-17 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
US6919239B2 (en) 1991-10-04 2005-07-19 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
JPH05102055A (en) * 1991-10-08 1993-04-23 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor chip
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JP2002176003A (en) * 2000-12-07 2002-06-21 Sony Corp Method for doping semiconductor layer, method for manufacturing thin film semiconductor element and thin film semiconductor element
WO2002047138A1 (en) * 2000-12-07 2002-06-13 Sony Corporation Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element
US6984552B2 (en) 2000-12-07 2006-01-10 Sony Corporation Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element
KR100863446B1 (en) 2000-12-07 2008-10-16 소니 가부시끼 가이샤 Method for doping semiconductor layer, method for producing thin film semiconductor element and thin film semiconductor element
KR100464653B1 (en) * 2002-12-09 2005-01-03 주식회사 하이닉스반도체 Electron beam curing equipment using dielectric barrier discharge plasma source

Also Published As

Publication number Publication date
JPH0335825B2 (en) 1991-05-29

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