JPS6439775A - Formation of electrode film of semiconductor device - Google Patents

Formation of electrode film of semiconductor device

Info

Publication number
JPS6439775A
JPS6439775A JP62196919A JP19691987A JPS6439775A JP S6439775 A JPS6439775 A JP S6439775A JP 62196919 A JP62196919 A JP 62196919A JP 19691987 A JP19691987 A JP 19691987A JP S6439775 A JPS6439775 A JP S6439775A
Authority
JP
Japan
Prior art keywords
film
primer
layer
coated
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62196919A
Other languages
Japanese (ja)
Inventor
Yasukazu Seki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62196919A priority Critical patent/JPS6439775A/en
Publication of JPS6439775A publication Critical patent/JPS6439775A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Abstract

PURPOSE:To connect an electrode film to both semiconductor layers without performing a process with excellent precision such as photoprocess etc., by a method wherein a substrate coated with a primer film and a conductive film is heated up to the temperature making a substrate material and a primer film metal diffuse each other so that the primer film metal may diffuse into other semiconductor layer getting over one semiconductor layer. CONSTITUTION:The surface of an n-type layer 22 is coated with a primer film 31 for electrode film and a conductor film 32 through the intermediary of a window made in a phosphorus glass film 13 by sputtering process to be closely adhered to the surface of n type layer 22 continuously. Besides, the coated primer layer 31 comprises titanium in thickness of around 0.1mum while the coated conductive film 32 comprises aluminum in thickness of around 3mum. Next, s substrate 10 is heated at 450 deg.C to make the primer layer 31 diffuse deep into the silicon of substrate 10. Due to such a heat treatment, the titanium in the primer film 31 can be diffused deep along the crystalline defect of silicon caused during the ion-implanting process and its top enters a p-type layer 21 beyond the n-type layer 22 as deep as about 0.5mum. Through these procedures, the electrode film can be conduction-connected with the semiconductor layers without fail.
JP62196919A 1987-08-06 1987-08-06 Formation of electrode film of semiconductor device Pending JPS6439775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62196919A JPS6439775A (en) 1987-08-06 1987-08-06 Formation of electrode film of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62196919A JPS6439775A (en) 1987-08-06 1987-08-06 Formation of electrode film of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6439775A true JPS6439775A (en) 1989-02-10

Family

ID=16365847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62196919A Pending JPS6439775A (en) 1987-08-06 1987-08-06 Formation of electrode film of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6439775A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0784340A1 (en) * 1996-01-11 1997-07-16 Deutsche ITT Industries GmbH Method for contacting differently doped regions in a semicondutor device, and semiconductor device
JP2015204301A (en) * 2014-04-10 2015-11-16 三菱電機株式会社 Semiconductor device and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735318A (en) * 1980-08-12 1982-02-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS58138076A (en) * 1982-01-04 1983-08-16 ゼネラル・エレクトリツク・カンパニイ Power mos-fet with shortcircuit between source and base and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735318A (en) * 1980-08-12 1982-02-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS58138076A (en) * 1982-01-04 1983-08-16 ゼネラル・エレクトリツク・カンパニイ Power mos-fet with shortcircuit between source and base and method of producing same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0784340A1 (en) * 1996-01-11 1997-07-16 Deutsche ITT Industries GmbH Method for contacting differently doped regions in a semicondutor device, and semiconductor device
US5885897A (en) * 1996-01-11 1999-03-23 Deutsche Itt Industries Gmbh Process for making contact to differently doped regions in a semiconductor device, and semiconductor device
JP2015204301A (en) * 2014-04-10 2015-11-16 三菱電機株式会社 Semiconductor device and method of manufacturing the same
US9755037B2 (en) 2014-04-10 2017-09-05 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device

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