JPS5783050A - Manufacture of selenium thin film diode - Google Patents
Manufacture of selenium thin film diodeInfo
- Publication number
- JPS5783050A JPS5783050A JP15811580A JP15811580A JPS5783050A JP S5783050 A JPS5783050 A JP S5783050A JP 15811580 A JP15811580 A JP 15811580A JP 15811580 A JP15811580 A JP 15811580A JP S5783050 A JPS5783050 A JP S5783050A
- Authority
- JP
- Japan
- Prior art keywords
- film
- diode
- manufacture
- evaporated
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title 1
- 229910052711 selenium Inorganic materials 0.000 title 1
- 239000011669 selenium Substances 0.000 title 1
- 239000010408 film Substances 0.000 abstract 13
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000000059 patterning Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004299 exfoliation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910001120 nichrome Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To manufacture the P-N junction of an N type CdSe diffusion film and an Se film as well as to increase the yielding rate for the thin film diode by a method wherein a Cd film, an Se film and an Ni film are successively laminated on the substrate consisting of alumina or glass, and then a heat-treatment is performed. CONSTITUTION:In the process of manufacture of a blocking diode with thermal head, a Cd film (1mum) is evaporated on a substrate 1 through the intermediary of an NiCr film of 500A or thereabouts, and the lower electrode 11' is formed by performing a patterning. Then, as Se film, an N type CdSe film 12 of 500A and an SeI film 13 of 1mum is mask-evaporated. Then, an Ni film 14 is evaporated on the whole surface, and after a heat-treatment has been performed at the temperature range of 200-350 deg.C, the upper electrode 15 is formed by patterning the Ni film 14, and a diode consisting of the N type CdSe and Se is formed. According to this constitution, the yielding rate of the diode can be improved, since the exfoliation of the film due to heat treatment can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15811580A JPS5783050A (en) | 1980-11-12 | 1980-11-12 | Manufacture of selenium thin film diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15811580A JPS5783050A (en) | 1980-11-12 | 1980-11-12 | Manufacture of selenium thin film diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5783050A true JPS5783050A (en) | 1982-05-24 |
Family
ID=15664624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15811580A Pending JPS5783050A (en) | 1980-11-12 | 1980-11-12 | Manufacture of selenium thin film diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5783050A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11127553B1 (en) | 2018-08-29 | 2021-09-21 | Autonetworks Technologies, Ltd. | Overcurrent cutoff unit |
-
1980
- 1980-11-12 JP JP15811580A patent/JPS5783050A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11127553B1 (en) | 2018-08-29 | 2021-09-21 | Autonetworks Technologies, Ltd. | Overcurrent cutoff unit |
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