JPS6474739A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6474739A JPS6474739A JP23092287A JP23092287A JPS6474739A JP S6474739 A JPS6474739 A JP S6474739A JP 23092287 A JP23092287 A JP 23092287A JP 23092287 A JP23092287 A JP 23092287A JP S6474739 A JPS6474739 A JP S6474739A
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- temperature
- aluminum wiring
- step part
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To enhance the coating and flattening properties of a step part by a method wherein, when an aluminum wiring layer is formed by sputtering process on a primer substrate with the step part, the maximum heating temperature of the substrate is specified. CONSTITUTION:When an aluminum wiring layer is deposited by sputtering process, the maximum heating temperature of a primer substrate is raised up to the temperature exceeding 80% of the melting point in the composition of deposited aluminum layer but not exceeding the melting point. When the temperature of primer substrate during the sputtering process of the aluminum wiring layer is being raised, the aluminum wiring layer reaches the white turbid state but the deposited film thereof in the mirror state can be formed by further raising the temperature. The aluminum wiring layer in such a mirror state is homogenized correcting such defects as those developed in the white turbid state. Furthermore, due to the high mobility of aluminum atoms in such a high temperature, the coating property on a step part can be enhanced notably to flatten the step part.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23092287A JPS6474739A (en) | 1987-09-17 | 1987-09-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23092287A JPS6474739A (en) | 1987-09-17 | 1987-09-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6474739A true JPS6474739A (en) | 1989-03-20 |
Family
ID=16915385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23092287A Pending JPS6474739A (en) | 1987-09-17 | 1987-09-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6474739A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02271634A (en) * | 1989-04-13 | 1990-11-06 | Sony Corp | Formation of multi-layer wiring |
JPH04363024A (en) * | 1990-11-30 | 1992-12-15 | Toshiba Corp | Manufacture of semiconductor device |
US5451261A (en) * | 1992-09-11 | 1995-09-19 | Matsushita Electric Industrial Co., Ltd. | Metal film deposition apparatus and metal film deposition method |
-
1987
- 1987-09-17 JP JP23092287A patent/JPS6474739A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02271634A (en) * | 1989-04-13 | 1990-11-06 | Sony Corp | Formation of multi-layer wiring |
JPH04363024A (en) * | 1990-11-30 | 1992-12-15 | Toshiba Corp | Manufacture of semiconductor device |
US5451261A (en) * | 1992-09-11 | 1995-09-19 | Matsushita Electric Industrial Co., Ltd. | Metal film deposition apparatus and metal film deposition method |
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