JPS6474739A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6474739A
JPS6474739A JP23092287A JP23092287A JPS6474739A JP S6474739 A JPS6474739 A JP S6474739A JP 23092287 A JP23092287 A JP 23092287A JP 23092287 A JP23092287 A JP 23092287A JP S6474739 A JPS6474739 A JP S6474739A
Authority
JP
Japan
Prior art keywords
wiring layer
temperature
aluminum wiring
step part
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23092287A
Other languages
Japanese (ja)
Inventor
Minoru Inoue
Koji Hashizume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23092287A priority Critical patent/JPS6474739A/en
Publication of JPS6474739A publication Critical patent/JPS6474739A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enhance the coating and flattening properties of a step part by a method wherein, when an aluminum wiring layer is formed by sputtering process on a primer substrate with the step part, the maximum heating temperature of the substrate is specified. CONSTITUTION:When an aluminum wiring layer is deposited by sputtering process, the maximum heating temperature of a primer substrate is raised up to the temperature exceeding 80% of the melting point in the composition of deposited aluminum layer but not exceeding the melting point. When the temperature of primer substrate during the sputtering process of the aluminum wiring layer is being raised, the aluminum wiring layer reaches the white turbid state but the deposited film thereof in the mirror state can be formed by further raising the temperature. The aluminum wiring layer in such a mirror state is homogenized correcting such defects as those developed in the white turbid state. Furthermore, due to the high mobility of aluminum atoms in such a high temperature, the coating property on a step part can be enhanced notably to flatten the step part.
JP23092287A 1987-09-17 1987-09-17 Manufacture of semiconductor device Pending JPS6474739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23092287A JPS6474739A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23092287A JPS6474739A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6474739A true JPS6474739A (en) 1989-03-20

Family

ID=16915385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23092287A Pending JPS6474739A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6474739A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271634A (en) * 1989-04-13 1990-11-06 Sony Corp Formation of multi-layer wiring
JPH04363024A (en) * 1990-11-30 1992-12-15 Toshiba Corp Manufacture of semiconductor device
US5451261A (en) * 1992-09-11 1995-09-19 Matsushita Electric Industrial Co., Ltd. Metal film deposition apparatus and metal film deposition method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271634A (en) * 1989-04-13 1990-11-06 Sony Corp Formation of multi-layer wiring
JPH04363024A (en) * 1990-11-30 1992-12-15 Toshiba Corp Manufacture of semiconductor device
US5451261A (en) * 1992-09-11 1995-09-19 Matsushita Electric Industrial Co., Ltd. Metal film deposition apparatus and metal film deposition method

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