KR940001455A

KR940001455A - Method of manufacturing polycrystalline silicon thin film transistor

Info

Publication number: KR940001455A
Application number: KR1019920011614A
Authority: KR
Inventors: 마석범
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1992-06-30
Filing date: 1992-06-30
Publication date: 1994-01-11

Abstract

본 발명은 다결정 실리콘 박막트랜지스터 (Poly-crystal Silicon Thin Film Transistor, p-Si TFT)의 제조방법에 관한 것으로, 좀더 구체적으로는 열처리시 발생하는 유리기판의 변형을 방지하기 위하여 유리기판(1)상에 제조되는 박막들을 유리기판(1)의 밑면에도 동일한 재료와 두께로 형성시켜서 다결정 실리콘 박막트랜지스터를 제조하는 것에 관한 것이다.The present invention relates to a method for manufacturing a poly-crystal silicon thin film transistor (p-Si TFT), more specifically, to prevent the deformation of the glass substrate generated during the heat treatment on the glass substrate (1) The present invention relates to manufacturing a polycrystalline silicon thin film transistor by forming thin films to be formed on the bottom surface of the glass substrate 1 with the same material and thickness.

유리기판(1)에 활성층(2)과 게이트전극(4)이 비정질실리콘으로 제조된 후 열처리에 의해 다결정 실리콘으로 변하면서 유리기판(1)을 휘게 하는데, 본 발명에서는 활성층(2)과 게이트전극 (4)을 유리기판(1)뒷면에도 제조하여 열처 리시 발생하는 기판의 응력을 보상해주는 방법으로 다결정 실리콘 박막트랜지스터를 제조하므로서 저가격의 유리기판을 사용하여 고기능의 폴리실리콘 박막트랜지스터를 신뢰성있게 제조할 수 있었다.In the glass substrate 1, the active layer 2 and the gate electrode 4 are made of amorphous silicon and then bent to the glass substrate 1 while being converted into polycrystalline silicon by heat treatment. In the present invention, the active layer 2 and the gate electrode are bent. (4) is also manufactured on the back surface of the glass substrate (1) to manufacture a polycrystalline silicon thin film transistor in a way to compensate for the stress of the substrate generated during heat treatment, and to manufacture a highly functional polysilicon thin film transistor reliably using a low cost glass substrate. Could.

Description

Method of manufacturing polycrystalline silicon thin film transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 제조공정도이다.2 is a manufacturing process diagram of the present invention.

Claims

In the manufacture of a thin film transistor using polycrystalline silicon crystallized in amorphous silicon as an active layer, polycrystalline silicon characterized in that thin films made on the glass substrate 1 are formed on the bottom surface of the glass substrate 1 with the same material and thickness. Method of manufacturing thin film transistor.

The method of manufacturing a polycrystalline silicon thin film transistor according to claim 1, wherein the thin films formed above and below the glass substrate are an active layer (2) and a gate electrode (4).

※ Note: The disclosure is based on the initial application.