KR960026438A - Thin film transistor manufacturing method - Google Patents

Thin film transistor manufacturing method Download PDF

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Publication number
KR960026438A
KR960026438A KR1019940038561A KR19940038561A KR960026438A KR 960026438 A KR960026438 A KR 960026438A KR 1019940038561 A KR1019940038561 A KR 1019940038561A KR 19940038561 A KR19940038561 A KR 19940038561A KR 960026438 A KR960026438 A KR 960026438A
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KR
South Korea
Prior art keywords
thin film
film transistor
transistor manufacturing
polysilicon layer
sputtering process
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Application number
KR1019940038561A
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Korean (ko)
Inventor
여태정
이우봉
전영호
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940038561A priority Critical patent/KR960026438A/en
Publication of KR960026438A publication Critical patent/KR960026438A/en

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

본 발명은 박막 트랜지스터(TFT 제조방법에 관한 것으로, TFT의 채널, 소스 및 드레인 영역으로 사용되는 폴리실리콘층의 그레인 사이즈를 크게하기 위해 실온에서 스퍼터링 공정에 의해 아몰포스 폴리실리콘을 증착하고 인시투로 수소화 처리를 한 후 저온 열처리하는 기술이 개시되어 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor (TFT fabrication method), in which amorphous polysilicon is deposited and in situ by a sputtering process at room temperature in order to increase the grain size of a polysilicon layer used as a channel, source and drain region of a TFT. Techniques for low temperature heat treatment after hydrogenation have been disclosed.

Description

박막 트랜지스터 제조방법Thin film transistor manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

첨부된 도면은 박막 트랜지스터의 단면도.The accompanying drawings are cross-sectional views of thin film transistors.

Claims (2)

박막 트랜지스터의 제조방법에 있어서, 실리콘기판상에 절연막을 형성한 후 아몰포스 폴리실리콘을 스퍼터링 공정에 의해 절연막 상부에 증착하는 단계와, 인시투로 수소화 처리를 한 후 열처리 공정을 진행하여 폴리실리콘층을 형성하는 단계와, 상기 폴리실리콘층 상부에 게이트 전극을 형성하는 단계로 이루어지는 것을 특징으로 하는 박막 트랜지스터 제조방법.In the method of manufacturing a thin film transistor, after forming an insulating film on a silicon substrate, depositing amorphous polysilicon on the insulating film by a sputtering process, performing a hydrogenation treatment in situ and then performing a heat treatment process to a polysilicon layer Forming a gate electrode on the polysilicon layer; 제1항에 있어서, 상기 스퍼터링 공정은 10-7Torr이하의 진공상태에서 실시되는 것을 특징으로 하는 박막트랜지스터의 제조방법.The method of claim 1, wherein the sputtering process is performed in a vacuum state of 10 −7 Torr or less. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940038561A 1994-12-29 1994-12-29 Thin film transistor manufacturing method KR960026438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940038561A KR960026438A (en) 1994-12-29 1994-12-29 Thin film transistor manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940038561A KR960026438A (en) 1994-12-29 1994-12-29 Thin film transistor manufacturing method

Publications (1)

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KR960026438A true KR960026438A (en) 1996-07-22

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KR1019940038561A KR960026438A (en) 1994-12-29 1994-12-29 Thin film transistor manufacturing method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100305527B1 (en) * 1998-07-09 2001-11-01 니시무로 타이죠 Method and apparatus for manufactu ring semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100305527B1 (en) * 1998-07-09 2001-11-01 니시무로 타이죠 Method and apparatus for manufactu ring semiconductor device

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