JPS57152175A - Semiconductor magneto-electric effect device - Google Patents

Semiconductor magneto-electric effect device

Info

Publication number
JPS57152175A
JPS57152175A JP56037449A JP3744981A JPS57152175A JP S57152175 A JPS57152175 A JP S57152175A JP 56037449 A JP56037449 A JP 56037449A JP 3744981 A JP3744981 A JP 3744981A JP S57152175 A JPS57152175 A JP S57152175A
Authority
JP
Japan
Prior art keywords
insb
thin film
temperature coefficient
effect device
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56037449A
Other languages
Japanese (ja)
Other versions
JPH0140512B2 (en
Inventor
Yoshio Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP56037449A priority Critical patent/JPS57152175A/en
Publication of JPS57152175A publication Critical patent/JPS57152175A/en
Publication of JPH0140512B2 publication Critical patent/JPH0140512B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)

Abstract

PURPOSE:To obtain a semiconductor magneto-electric effect device composed of a vapor plated thin InSb film with its Hall constant temperature coefficient and electric conductivity temperature coefficient smaller at normal temperatures by improving the InSb thin film heat treatment process. CONSTITUTION:An InSb thin film is vapor plated on a substrate and the film is subjected in an Ar atmosphere to a short period heating at a temperature slightly lower than the InSb melting point, exemplifiedly at 510 deg.C. This is immediately followed by a cooling process with a temperature lapse rate of 90 deg.C/min. These processes change the InSb thin film crystalline structure and composition, and the type of conductivity thereof, so that a semiconductor magneto-electric effect device is obtained wherein the Hall constant temperature coefficient and conductivity temperature coefficient are smaller at normal temperatures and the ratio of In to the entire thin film structure is not lower than 58atom%. The white dots in the figure indicate pre-heat treatment properties and the black dots post-heat treatment properties.
JP56037449A 1981-03-16 1981-03-16 Semiconductor magneto-electric effect device Granted JPS57152175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56037449A JPS57152175A (en) 1981-03-16 1981-03-16 Semiconductor magneto-electric effect device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56037449A JPS57152175A (en) 1981-03-16 1981-03-16 Semiconductor magneto-electric effect device

Publications (2)

Publication Number Publication Date
JPS57152175A true JPS57152175A (en) 1982-09-20
JPH0140512B2 JPH0140512B2 (en) 1989-08-29

Family

ID=12497804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56037449A Granted JPS57152175A (en) 1981-03-16 1981-03-16 Semiconductor magneto-electric effect device

Country Status (1)

Country Link
JP (1) JPS57152175A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196984A (en) * 1984-03-19 1985-10-05 Murata Mfg Co Ltd Thick-film semiconductor device
JPH02106080A (en) * 1988-10-14 1990-04-18 Agency Of Ind Science & Technol Recrystallized film for hall effect element and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196984A (en) * 1984-03-19 1985-10-05 Murata Mfg Co Ltd Thick-film semiconductor device
JPH02106080A (en) * 1988-10-14 1990-04-18 Agency Of Ind Science & Technol Recrystallized film for hall effect element and manufacture thereof

Also Published As

Publication number Publication date
JPH0140512B2 (en) 1989-08-29

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