JPS5795679A - Manufacturing method of selenium semiconductor device - Google Patents
Manufacturing method of selenium semiconductor deviceInfo
- Publication number
- JPS5795679A JPS5795679A JP55171821A JP17182180A JPS5795679A JP S5795679 A JPS5795679 A JP S5795679A JP 55171821 A JP55171821 A JP 55171821A JP 17182180 A JP17182180 A JP 17182180A JP S5795679 A JPS5795679 A JP S5795679A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulation
- superb
- heat
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052711 selenium Inorganic materials 0.000 title 1
- 239000011669 selenium Substances 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0272—Selenium or tellurium
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain a Se semiconductor device by covering with an insulation thin film a thin layer of Se or chiefly of Se on a substrate and heat-treating the insulation film at temperatures below the melting point of Se. CONSTITUTION:A thin layer 14 of Se or mostly of Se is evaporated on a substrated 11 of Al and the like, the main surface 16 of which is not necessarily made coarse. It is then covered with epoxy resin which has a high insulation and superb property in high frequencies and is resistive to heat treatment. SiO2 or the like may be used instead. It is then heat-treated at temperatures below the melting point of Si for several minutes to 60min to make a throughly crystalized Se layer 12. By this method of forming the layer 12 after covering the layer 14 with the insulation layer 13, a uniform and superb quality of the layer 12 of strong adhesion without the need of making the coarse surface is obtained. The device has a superb property and is easy to handle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55171821A JPS5795679A (en) | 1980-12-05 | 1980-12-05 | Manufacturing method of selenium semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55171821A JPS5795679A (en) | 1980-12-05 | 1980-12-05 | Manufacturing method of selenium semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5795679A true JPS5795679A (en) | 1982-06-14 |
| JPS6248914B2 JPS6248914B2 (en) | 1987-10-16 |
Family
ID=15930356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55171821A Granted JPS5795679A (en) | 1980-12-05 | 1980-12-05 | Manufacturing method of selenium semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5795679A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60220967A (en) * | 1984-04-18 | 1985-11-05 | Fuji Xerox Co Ltd | Semiconductor device |
| JP2015233027A (en) * | 2013-06-13 | 2015-12-24 | 日本放送協会 | Photoelectric conversion device, manufacturing method thereof, lamination type solid-state imaging device, and solar battery |
| CN115084290A (en) * | 2022-07-06 | 2022-09-20 | 中国科学院化学研究所 | Polycrystalline selenium film, preparation method thereof and solar cell |
-
1980
- 1980-12-05 JP JP55171821A patent/JPS5795679A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60220967A (en) * | 1984-04-18 | 1985-11-05 | Fuji Xerox Co Ltd | Semiconductor device |
| JP2015233027A (en) * | 2013-06-13 | 2015-12-24 | 日本放送協会 | Photoelectric conversion device, manufacturing method thereof, lamination type solid-state imaging device, and solar battery |
| CN115084290A (en) * | 2022-07-06 | 2022-09-20 | 中国科学院化学研究所 | Polycrystalline selenium film, preparation method thereof and solar cell |
| CN115084290B (en) * | 2022-07-06 | 2023-07-25 | 中国科学院化学研究所 | Polycrystalline selenium film, preparation method thereof and solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6248914B2 (en) | 1987-10-16 |
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