JPS5544789A - Formation of mono-crystal semiconductor layer - Google Patents
Formation of mono-crystal semiconductor layerInfo
- Publication number
- JPS5544789A JPS5544789A JP11961378A JP11961378A JPS5544789A JP S5544789 A JPS5544789 A JP S5544789A JP 11961378 A JP11961378 A JP 11961378A JP 11961378 A JP11961378 A JP 11961378A JP S5544789 A JPS5544789 A JP S5544789A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mono
- crystal
- insulative
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To facilitate obtaining of mono-crystal layer by forming non-crystalline semiconductor layer on a surface of insulative layer disposed on insulative substrate or semiconductor substrate and contacting seed crystal of mono-crystal therewith and heat-processing to mono-crystallize.
CONSTITUTION: An insulative layer 2 resistable against high temperature of 1100°C such as SiO2, Al2O3, Si3N4 is deposited on a Si substrate 1 and a multi-crystal Si layer 3 is deposited thereon in thickness of 1000W5000Å. Then, acceleration voltage for ion impacting is selected in order that 80% of thickness from the surface of the layer 3 is made non-crystalline and ions such as Ar, Ne, B and P are impacted. Then two mono-crystal Si pieces 5 are contacted with one part of the surface of the layer 3 and between them high electric current is applied in short time so as to mono-crystallize the layer 3 just under the Si pieces 5 and it is effected on whole layer 3 in short time and all layer 3 is mono-crystallized 35. Thus, formation of mono-crystal layer is simplified and defect of crystal practically becomes no harm degree.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11961378A JPS5544789A (en) | 1978-09-27 | 1978-09-27 | Formation of mono-crystal semiconductor layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11961378A JPS5544789A (en) | 1978-09-27 | 1978-09-27 | Formation of mono-crystal semiconductor layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5544789A true JPS5544789A (en) | 1980-03-29 |
Family
ID=14765744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11961378A Pending JPS5544789A (en) | 1978-09-27 | 1978-09-27 | Formation of mono-crystal semiconductor layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5544789A (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57148343A (en) * | 1981-03-11 | 1982-09-13 | Toshiba Corp | Manufacture of liquid crystal television element |
JPS57159017A (en) * | 1981-03-27 | 1982-10-01 | Toshiba Corp | Manufacture of semiconductor single crystal film |
JPS5856408A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Method of growing single crystal silicon film |
JPS5893221A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Semiconductor thin film structure and preparation thereof |
JPS5893216A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Manufacture of semiconductor device |
JPS5893225A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Preparation of semiconductor thin film structure |
JPS58130517A (en) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | Manufacture of single crystal thin film |
JPS5945997A (en) * | 1982-09-03 | 1984-03-15 | Nec Corp | Vapor growth of semiconductor |
JPS5945996A (en) * | 1982-09-03 | 1984-03-15 | Nec Corp | Vapor growth of semiconductor |
JPS60246619A (en) * | 1984-05-22 | 1985-12-06 | Hitachi Ltd | Manufacture of semiconductor device |
US5123975A (en) * | 1989-03-28 | 1992-06-23 | Ricoh Company, Ltd. | Single crystal silicon substrate |
JPH05102189A (en) * | 1991-08-13 | 1993-04-23 | Fujitsu Ltd | Formation method of thin film, silicon thin film and formation method of silicon thin-film transistor |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
US5559042A (en) * | 1991-03-27 | 1996-09-24 | Semiconductor Energy Laboratory Co., Inc. | Method of fabricating a thin film semiconductor device using an insulating film which contracts when thermally treated |
JP2007306028A (en) * | 2007-07-23 | 2007-11-22 | Toshiba Corp | Method for manufacturing semiconductor device |
-
1978
- 1978-09-27 JP JP11961378A patent/JPS5544789A/en active Pending
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57148343A (en) * | 1981-03-11 | 1982-09-13 | Toshiba Corp | Manufacture of liquid crystal television element |
JPS57159017A (en) * | 1981-03-27 | 1982-10-01 | Toshiba Corp | Manufacture of semiconductor single crystal film |
JPS5856408A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Method of growing single crystal silicon film |
JPS5893221A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Semiconductor thin film structure and preparation thereof |
JPS5893216A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Manufacture of semiconductor device |
JPS5893225A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Preparation of semiconductor thin film structure |
JPH0514413B2 (en) * | 1982-01-29 | 1993-02-25 | Hitachi Ltd | |
JPS58130517A (en) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | Manufacture of single crystal thin film |
JPS5945997A (en) * | 1982-09-03 | 1984-03-15 | Nec Corp | Vapor growth of semiconductor |
JPS5945996A (en) * | 1982-09-03 | 1984-03-15 | Nec Corp | Vapor growth of semiconductor |
JPS60246619A (en) * | 1984-05-22 | 1985-12-06 | Hitachi Ltd | Manufacture of semiconductor device |
US5123975A (en) * | 1989-03-28 | 1992-06-23 | Ricoh Company, Ltd. | Single crystal silicon substrate |
US5559042A (en) * | 1991-03-27 | 1996-09-24 | Semiconductor Energy Laboratory Co., Inc. | Method of fabricating a thin film semiconductor device using an insulating film which contracts when thermally treated |
US5736439A (en) * | 1991-03-27 | 1998-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor device in which the insulating layer is heated to contract after crystallization of the semiconductor layer |
US6242759B1 (en) | 1991-03-27 | 2001-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6337236B2 (en) | 1991-03-27 | 2002-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
US6589829B2 (en) | 1991-03-27 | 2003-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JPH05102189A (en) * | 1991-08-13 | 1993-04-23 | Fujitsu Ltd | Formation method of thin film, silicon thin film and formation method of silicon thin-film transistor |
US5480818A (en) * | 1992-02-10 | 1996-01-02 | Fujitsu Limited | Method for forming a film and method for manufacturing a thin film transistor |
JP2007306028A (en) * | 2007-07-23 | 2007-11-22 | Toshiba Corp | Method for manufacturing semiconductor device |
JP4550870B2 (en) * | 2007-07-23 | 2010-09-22 | 株式会社東芝 | Manufacturing method of semiconductor device |
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