JPS5544789A - Formation of mono-crystal semiconductor layer - Google Patents

Formation of mono-crystal semiconductor layer

Info

Publication number
JPS5544789A
JPS5544789A JP11961378A JP11961378A JPS5544789A JP S5544789 A JPS5544789 A JP S5544789A JP 11961378 A JP11961378 A JP 11961378A JP 11961378 A JP11961378 A JP 11961378A JP S5544789 A JPS5544789 A JP S5544789A
Authority
JP
Japan
Prior art keywords
layer
mono
crystal
insulative
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11961378A
Other languages
Japanese (ja)
Inventor
Yasuaki Hokari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11961378A priority Critical patent/JPS5544789A/en
Publication of JPS5544789A publication Critical patent/JPS5544789A/en
Pending legal-status Critical Current

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  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To facilitate obtaining of mono-crystal layer by forming non-crystalline semiconductor layer on a surface of insulative layer disposed on insulative substrate or semiconductor substrate and contacting seed crystal of mono-crystal therewith and heat-processing to mono-crystallize.
CONSTITUTION: An insulative layer 2 resistable against high temperature of 1100°C such as SiO2, Al2O3, Si3N4 is deposited on a Si substrate 1 and a multi-crystal Si layer 3 is deposited thereon in thickness of 1000W5000Å. Then, acceleration voltage for ion impacting is selected in order that 80% of thickness from the surface of the layer 3 is made non-crystalline and ions such as Ar, Ne, B and P are impacted. Then two mono-crystal Si pieces 5 are contacted with one part of the surface of the layer 3 and between them high electric current is applied in short time so as to mono-crystallize the layer 3 just under the Si pieces 5 and it is effected on whole layer 3 in short time and all layer 3 is mono-crystallized 35. Thus, formation of mono-crystal layer is simplified and defect of crystal practically becomes no harm degree.
COPYRIGHT: (C)1980,JPO&Japio
JP11961378A 1978-09-27 1978-09-27 Formation of mono-crystal semiconductor layer Pending JPS5544789A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11961378A JPS5544789A (en) 1978-09-27 1978-09-27 Formation of mono-crystal semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11961378A JPS5544789A (en) 1978-09-27 1978-09-27 Formation of mono-crystal semiconductor layer

Publications (1)

Publication Number Publication Date
JPS5544789A true JPS5544789A (en) 1980-03-29

Family

ID=14765744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11961378A Pending JPS5544789A (en) 1978-09-27 1978-09-27 Formation of mono-crystal semiconductor layer

Country Status (1)

Country Link
JP (1) JPS5544789A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148343A (en) * 1981-03-11 1982-09-13 Toshiba Corp Manufacture of liquid crystal television element
JPS57159017A (en) * 1981-03-27 1982-10-01 Toshiba Corp Manufacture of semiconductor single crystal film
JPS5856408A (en) * 1981-09-30 1983-04-04 Toshiba Corp Method of growing single crystal silicon film
JPS5893221A (en) * 1981-11-30 1983-06-02 Toshiba Corp Semiconductor thin film structure and preparation thereof
JPS5893216A (en) * 1981-11-30 1983-06-02 Toshiba Corp Manufacture of semiconductor device
JPS5893225A (en) * 1981-11-30 1983-06-02 Toshiba Corp Preparation of semiconductor thin film structure
JPS58130517A (en) * 1982-01-29 1983-08-04 Hitachi Ltd Manufacture of single crystal thin film
JPS5945997A (en) * 1982-09-03 1984-03-15 Nec Corp Vapor growth of semiconductor
JPS5945996A (en) * 1982-09-03 1984-03-15 Nec Corp Vapor growth of semiconductor
JPS60246619A (en) * 1984-05-22 1985-12-06 Hitachi Ltd Manufacture of semiconductor device
US5123975A (en) * 1989-03-28 1992-06-23 Ricoh Company, Ltd. Single crystal silicon substrate
JPH05102189A (en) * 1991-08-13 1993-04-23 Fujitsu Ltd Formation method of thin film, silicon thin film and formation method of silicon thin-film transistor
US5480818A (en) * 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
US5559042A (en) * 1991-03-27 1996-09-24 Semiconductor Energy Laboratory Co., Inc. Method of fabricating a thin film semiconductor device using an insulating film which contracts when thermally treated
JP2007306028A (en) * 2007-07-23 2007-11-22 Toshiba Corp Method for manufacturing semiconductor device

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57148343A (en) * 1981-03-11 1982-09-13 Toshiba Corp Manufacture of liquid crystal television element
JPS57159017A (en) * 1981-03-27 1982-10-01 Toshiba Corp Manufacture of semiconductor single crystal film
JPS5856408A (en) * 1981-09-30 1983-04-04 Toshiba Corp Method of growing single crystal silicon film
JPS5893221A (en) * 1981-11-30 1983-06-02 Toshiba Corp Semiconductor thin film structure and preparation thereof
JPS5893216A (en) * 1981-11-30 1983-06-02 Toshiba Corp Manufacture of semiconductor device
JPS5893225A (en) * 1981-11-30 1983-06-02 Toshiba Corp Preparation of semiconductor thin film structure
JPH0514413B2 (en) * 1982-01-29 1993-02-25 Hitachi Ltd
JPS58130517A (en) * 1982-01-29 1983-08-04 Hitachi Ltd Manufacture of single crystal thin film
JPS5945997A (en) * 1982-09-03 1984-03-15 Nec Corp Vapor growth of semiconductor
JPS5945996A (en) * 1982-09-03 1984-03-15 Nec Corp Vapor growth of semiconductor
JPS60246619A (en) * 1984-05-22 1985-12-06 Hitachi Ltd Manufacture of semiconductor device
US5123975A (en) * 1989-03-28 1992-06-23 Ricoh Company, Ltd. Single crystal silicon substrate
US5559042A (en) * 1991-03-27 1996-09-24 Semiconductor Energy Laboratory Co., Inc. Method of fabricating a thin film semiconductor device using an insulating film which contracts when thermally treated
US5736439A (en) * 1991-03-27 1998-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device in which the insulating layer is heated to contract after crystallization of the semiconductor layer
US6242759B1 (en) 1991-03-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6337236B2 (en) 1991-03-27 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6589829B2 (en) 1991-03-27 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH05102189A (en) * 1991-08-13 1993-04-23 Fujitsu Ltd Formation method of thin film, silicon thin film and formation method of silicon thin-film transistor
US5480818A (en) * 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
JP2007306028A (en) * 2007-07-23 2007-11-22 Toshiba Corp Method for manufacturing semiconductor device
JP4550870B2 (en) * 2007-07-23 2010-09-22 株式会社東芝 Manufacturing method of semiconductor device

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