JPS57148343A - Manufacture of liquid crystal television element - Google Patents

Manufacture of liquid crystal television element

Info

Publication number
JPS57148343A
JPS57148343A JP3382481A JP3382481A JPS57148343A JP S57148343 A JPS57148343 A JP S57148343A JP 3382481 A JP3382481 A JP 3382481A JP 3382481 A JP3382481 A JP 3382481A JP S57148343 A JPS57148343 A JP S57148343A
Authority
JP
Japan
Prior art keywords
grooves
film
irradiated
oxide film
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3382481A
Other languages
Japanese (ja)
Inventor
Keiji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3382481A priority Critical patent/JPS57148343A/en
Publication of JPS57148343A publication Critical patent/JPS57148343A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a deep and wide recrystal suitable for a liquid crystal television element, by providing grooves on a semiconductor substrate convered with an oxide film, and irradiating parallelly to the grooves with laser of spot diameter/scanning width >=1, after growth of a polycrystalline Si film on the whole surface. CONSTITUTION:A plurality of grooves are digged by lithographical technique on a transparent glass substrate 1 covered with an oxide film. A polycrstalline Si film 5 is grown on the whole surface including them. Next, an ion beam 3 inckuding P<+> ions is irradiated here and so is an Ar laser beam 4. The laser beam 4 is limited thereupon to spot diameter/scanning width >=1, and is irradiated by shifting parallel to the grooves. Thus, the film 5 is doped, and a deep and wide recrystal is produced on the irradiated pant. The oxide film is obtaned to the desired depth by diffusing oxidation. This enables the uniform anneal without using a mask.
JP3382481A 1981-03-11 1981-03-11 Manufacture of liquid crystal television element Pending JPS57148343A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3382481A JPS57148343A (en) 1981-03-11 1981-03-11 Manufacture of liquid crystal television element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3382481A JPS57148343A (en) 1981-03-11 1981-03-11 Manufacture of liquid crystal television element

Publications (1)

Publication Number Publication Date
JPS57148343A true JPS57148343A (en) 1982-09-13

Family

ID=12397229

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3382481A Pending JPS57148343A (en) 1981-03-11 1981-03-11 Manufacture of liquid crystal television element

Country Status (1)

Country Link
JP (1) JPS57148343A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544789A (en) * 1978-09-27 1980-03-29 Nec Corp Formation of mono-crystal semiconductor layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5544789A (en) * 1978-09-27 1980-03-29 Nec Corp Formation of mono-crystal semiconductor layer

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