JPS574177A - Manufacture of solar cell - Google Patents
Manufacture of solar cellInfo
- Publication number
- JPS574177A JPS574177A JP7720380A JP7720380A JPS574177A JP S574177 A JPS574177 A JP S574177A JP 7720380 A JP7720380 A JP 7720380A JP 7720380 A JP7720380 A JP 7720380A JP S574177 A JPS574177 A JP S574177A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating film
- doped oxide
- oxide film
- round
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To simplify a manufacturing process by forming an insulating film on the back of a substrate in thickness thicker than a circling-round of the surface of the substrate at an edge of the substrate before applying a diffusion source. CONSTITUTION:The semiconductor substrate 21 is chemically etched previously in order to remove a crushed layer due to slicing, etc., and the flatness of the edge section of the substrate is damaged. The insulating film 23 in SiO2, etc. is grown on the back according to a sputtering method, and circled round onto not only the back 22 and a side surface but the surface. The diffusion source is applied, and a doped oxide film 24 is formed. Accordingly, the circling-round is generated similarly at the edge section of the substrate, and the doped oxide film is made up on the SiO2 film. The solar cell is completed only by removing the doped oxide film used for diffusion and the insulating film without generating a short circuit even when the electrodes of both sides are formed. Thus, the complicated mesa-etching process is unnecessitated, and the process is largely simplified.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7720380A JPS574177A (en) | 1980-06-10 | 1980-06-10 | Manufacture of solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7720380A JPS574177A (en) | 1980-06-10 | 1980-06-10 | Manufacture of solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS574177A true JPS574177A (en) | 1982-01-09 |
JPS6148795B2 JPS6148795B2 (en) | 1986-10-25 |
Family
ID=13627262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7720380A Granted JPS574177A (en) | 1980-06-10 | 1980-06-10 | Manufacture of solar cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS574177A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6718616B2 (en) | 2000-05-18 | 2004-04-13 | Mitsui High-Tec, Inc. | Method of producing laminated iron cores |
-
1980
- 1980-06-10 JP JP7720380A patent/JPS574177A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6718616B2 (en) | 2000-05-18 | 2004-04-13 | Mitsui High-Tec, Inc. | Method of producing laminated iron cores |
Also Published As
Publication number | Publication date |
---|---|
JPS6148795B2 (en) | 1986-10-25 |
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