JPS6148795B2 - - Google Patents
Info
- Publication number
- JPS6148795B2 JPS6148795B2 JP55077203A JP7720380A JPS6148795B2 JP S6148795 B2 JPS6148795 B2 JP S6148795B2 JP 55077203 A JP55077203 A JP 55077203A JP 7720380 A JP7720380 A JP 7720380A JP S6148795 B2 JPS6148795 B2 JP S6148795B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diffusion
- insulating film
- solar cell
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 40
- 238000009792 diffusion process Methods 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
本発明は太陽電池の製造方法に係り、特に拡散
源として半導体結晶基板表面に塗布法により形成
したドープドオキサイド膜を用いる熱拡散接合型
太陽電池の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a solar cell, and more particularly to a method for manufacturing a thermal diffusion bonded solar cell using a doped oxide film formed by a coating method on the surface of a semiconductor crystal substrate as a diffusion source. be.
従来、ｐ−ｎ接合型太陽電池の製造には半導体
結晶基板とは異なる導電型層を熱拡散法によつて
該基板表面近傍に形成することが最も多く用いら
れている。拡散源として、通常、ガスソースもし
くは固体ソースを用いて形成されたドープドオキ
サイド膜が用いられているが、ガス供給装置の運
転もしくは固体ソースの防湿管理などの繁雑さ及
び被拡散基板の表裏両面に拡散される欠点があつ
た。前記欠点を解決する一方法として、拡散剤を
被拡散基板の表面に塗布し、その結果得られたド
ープドオキサイド膜を用いて、塗布面のみに拡散
層を形成する方法が用いられつつある。しかし、
前記塗布拡散法の場合にも次のような欠点があつ
た。すなわち拡散剤を均一に塗布するためにスピ
ンナーが用いられているがこのため、基板の縁に
塗布液が偏在し塗布面の裏面まで回り込みが生じ
ていた。又、化学エツチングなどによつて基板の
平坦度が悪化した場合にはこのような塗布液の回
り込みは特に著しかつた。前記の方法によつて形
成されたドープドオキサイド膜を用いて熱拡散を
行う結果、拡散層も回り込み、塗布拡散法の特徴
が失われていた。実際には基板の縁をメサエツチ
ングして回り込だ拡散層を除去し、表裏電極の短
絡を防ぐ必要があるという重大な欠点があつた。 Conventionally, in the manufacture of pn junction solar cells, it has been most often used to form a layer of a conductivity type different from that of a semiconductor crystal substrate near the surface of the substrate by thermal diffusion. As a diffusion source, a doped oxide film formed using a gas source or a solid source is usually used, but it is complicated to operate the gas supply equipment or manage moisture proofing of the solid source, and it is difficult to operate both the front and back sides of the substrate to be diffused. There was a shortcoming that spread to As one method for solving the above-mentioned drawbacks, a method is being used in which a diffusion agent is applied to the surface of a substrate to be diffused, and the resulting doped oxide film is used to form a diffusion layer only on the applied surface. but,
The coating-diffusion method also had the following drawbacks. That is, a spinner is used to uniformly apply the diffusing agent, but because of this, the coating liquid is unevenly distributed around the edges of the substrate and flows around to the back side of the coated surface. Further, when the flatness of the substrate is deteriorated due to chemical etching or the like, such circulation of the coating liquid becomes particularly significant. As a result of performing thermal diffusion using the doped oxide film formed by the above method, the diffusion layer also wraps around, and the characteristics of the coating diffusion method were lost. In practice, there was a serious drawback in that it was necessary to mesa-etch the edge of the substrate to remove the diffused layer that had wrapped around it to prevent short circuits between the front and back electrodes.
本発明の目的は上記従来の欠点を解決せしめか
つ、工程の簡略化を可能とする太陽電池の製造方
法を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a solar cell, which solves the above-mentioned conventional drawbacks and allows the process to be simplified.
本発明によれば、半導体結晶基板に該基板とは
異なる導電型を有する層を熱拡散法により該基板
中に形成する接合型太陽電池であつて、拡散剤を
塗布することにより該基板の片側表面にドープド
オキサイド膜拡散源を形成する工程を備えた太陽
電池の製造方法において、前記拡散源の塗布工程
に先だつて、前記基板の裏面に絶縁膜を該基板の
縁で回り込みが生じる膜厚以上に形成することを
特徴とする太陽電池の製造方法が得られる。 According to the present invention, there is provided a junction solar cell in which a layer having a conductivity type different from that of the substrate is formed on a semiconductor crystal substrate by a thermal diffusion method, wherein one side of the substrate is coated with a diffusing agent. In a method for manufacturing a solar cell comprising a step of forming a doped oxide film diffusion source on the surface, prior to the step of applying the diffusion source, an insulating film is formed on the back surface of the substrate to a film thickness that causes wrapping around the edge of the substrate. A method for manufacturing a solar cell characterized by forming the solar cell as described above is obtained.
前記本発明によれば基板の縁で回り込んだ絶縁
膜が、該基板の側端及び拡散表面側の端の周囲を
覆うため、該部分にはドープドオキサイド膜が絶
縁膜上に回り込んで形成されても拡散層が形成さ
れない。ゆえに、拡散源を塗布する工程に先だつ
て絶縁膜を形成する工程を挿入することによつ
て、マスクを用いてメサエツチする繁雑な工程を
省くことができ、かつ表裏電極の短絡が起こらな
い。 According to the present invention, the insulating film that wraps around the edge of the substrate covers the side edges of the substrate and the edge on the diffusion surface side, so the doped oxide film wraps around onto the insulating film in these areas. Even if a diffusion layer is formed, a diffusion layer is not formed. Therefore, by inserting the step of forming an insulating film prior to the step of applying the diffusion source, the complicated step of mesa etching using a mask can be omitted, and short circuits between the front and back electrodes will not occur.
次に図を用いて詳細に説明する。 Next, it will be explained in detail using figures.
第１図ａ〜ｇは従来の太陽電池の塗布拡散法に
よるｐ−ｎ接合形成の工程を説明するための図で
各工程における基板の縁の部分の拡大図である。
第１図ａにおいて半導体結晶基板１１はスライス
及び研磨などによる破砕層除去のために化学エツ
チングされている。このため、基板の縁の部分の
平坦度が損われている。次にｂにおいて、拡散源
が有機溶媒中に混合された塗布液を基板１１上に
スピンナーで塗布する。塗布被膜１４は塗布面の
みならず、基板の側端及び裏面の端の周囲１２ま
で回り込んで付着している。塗布皮膜は乾燥させ
た後ｃにおいて、拡散のためのドープドオキサイ
ド膜として用いられる。ｃにおいて、1150℃程度
に保持された拡散炉を用いて拡散層１５を形成し
た。回り込んで付着したドープドオキサイド膜１
４によつて裏面の端の周囲１２まで拡散層１５が
形成されていた。したがつてドープドオキサイド
膜１４を除去したｄにおいて、このまま表裏の電
極を形成すると拡散層１５が裏面電極と接触する
ので、短絡を起こしてしまう。この短絡を起こす
基板の周囲をメサエツチし拡散層を除去する目的
で、ｅにおいて、基板の周囲を除いた部分に、樹
脂レジスト１６を用いてマスクを形成した。ｆに
おいて、弗硝酸系エツチング液を用いて、メサエ
ツチングを行つた。メサエツチングされた部分１
７は拡散層が残らず除去されていた。ｇにおい
て、樹脂レジストを除去した結果、基板の片面の
みのｐ−ｎ接合となり、表裏に電極が形成され
て、太陽電池素子が完成する。以上の説明から、
従来法には、メサエツチングが必要であり、メサ
マスク形成は繁雑であることがわかる。又、該メ
サマスクは十分な耐酸性を有することが必要であ
つた。 FIGS. 1a to 1g are diagrams for explaining the steps of forming a p-n junction by a conventional coating-diffusion method for solar cells, and are enlarged views of the edges of the substrate in each step.
In FIG. 1a, a semiconductor crystal substrate 11 has been chemically etched to remove the fracture layer by slicing and polishing. Therefore, the flatness of the edge portion of the substrate is impaired. Next, in b, a coating liquid containing a diffusion source mixed in an organic solvent is applied onto the substrate 11 using a spinner. The coating film 14 extends around and adheres not only to the coated surface but also to the periphery 12 of the side edges and back edges of the substrate. After drying, the coated film is used as a doped oxide film for diffusion. In c, a diffusion layer 15 was formed using a diffusion furnace maintained at about 1150°C. Doped oxide film 1 wrapped around and attached
4, a diffusion layer 15 was formed up to the periphery 12 of the back surface. Therefore, if the front and back electrodes are formed as they are at point d where the doped oxide film 14 is removed, the diffusion layer 15 will come into contact with the back electrode, resulting in a short circuit. In order to mesa-etch the area around the substrate where this short circuit occurs and remove the diffusion layer, a mask was formed using a resin resist 16 in the area other than the area around the substrate in step e. In step f, mesa etching was performed using a fluoronitric acid-based etching solution. Mesa-etched part 1
No. 7 had all the diffusion layer removed. In g, the resin resist is removed, resulting in a pn junction on only one side of the substrate, electrodes are formed on the front and back sides, and the solar cell element is completed. From the above explanation,
It can be seen that the conventional method requires mesa etching and the formation of a mesa mask is complicated. Further, the mesa mask was required to have sufficient acid resistance.
次に本発明の一実施例について説明する。第２
図ａ〜ｅは本発明を説明するための図で各工程に
おける基板の縁の部分拡大図である。 Next, one embodiment of the present invention will be described. Second
Figures a to e are diagrams for explaining the present invention, and are partially enlarged views of the edge of the substrate in each step.
ａにおいて、化学エツチングのため基板の縁の
部分の平坦度が損われていることは従来と同じで
ある。従来法と異なつて本発明による場合、ｂに
おいて、接合が形成される反対の裏面に絶縁膜を
形成する。スパツタ装置を用いてSiO2などの絶
縁膜２３を0.5〜１μｍの厚さに裏面に成長させ
た結果、基板の端の部分において裏面２２、側面
のみならず表面にも回り込んで成長していた。ｃ
において、従来法と同様に拡散源を塗布し、ドー
プドオキサイド膜２４を形成した。基板の端の部
分は同様に回り込みが生じており、ドープドオキ
サイド膜はSiO2膜上に形成される。したがつ
て、従来法と同様にｄにおいて拡散を行つたが表
面片側のみ拡散層２５が形成され基板の端の部分
及び、側面及び裏面２２には基板中に拡散層が生
じなかつた。よつてｅにおいて拡散に用いたドー
プドオキサイド膜及び絶縁層を除去するだけで、
表裏の電極を形成しても短絡が生じず、太陽電池
素子が完成する。以上の説明から、本発明による
方法は、拡散源を塗布する以前に、裏面に絶縁膜
を形成する際、表面端部への回り込みが十分な厚
さとなる程度絶縁膜を成長させることによつて、
前記第１図を用いて説明したｅ，ｆ，ｇで示す繁
雑なメサエツチング工程が不要となり、大幅に工
程が簡単化される。なお、絶縁膜形成は多数枚の
基板を同時に行えること、及びドープドオキサイ
ド膜除去に用いる弗酸系エツチング液によつて同
時に除去できることなど量産効果も有している。 In a, the flatness of the edge portion of the substrate is impaired due to chemical etching, as in the prior art. Unlike the conventional method, in the case of the present invention, in b, an insulating film is formed on the back surface opposite to where the junction is formed. As a result of growing an insulating film 23 such as SiO 2 on the back surface to a thickness of 0.5 to 1 μm using a sputtering device, it was found that the insulating film 23 had grown not only on the back surface 22 and the sides but also on the front surface at the edge of the substrate. . c.
In the same manner as in the conventional method, a diffusion source was applied to form a doped oxide film 24. Similarly, wraparound occurs at the edge of the substrate, and the doped oxide film is formed on the SiO 2 film. Therefore, although diffusion was performed in step d as in the conventional method, the diffusion layer 25 was formed only on one side of the surface, and no diffusion layer was formed in the substrate at the end portion, side surface, and back surface 22 of the substrate. Therefore, by simply removing the doped oxide film and insulating layer used for diffusion in e.
Even when the front and back electrodes are formed, no short circuit occurs, and the solar cell element is completed. From the above explanation, the method according to the present invention is such that when an insulating film is formed on the back surface before applying the diffusion source, the insulating film is grown to a sufficient thickness so that it wraps around to the edge of the front surface. ,
The complicated mesa etching steps indicated by e, f, and g explained using FIG. 1 are no longer necessary, and the process is greatly simplified. Incidentally, the insulating film formation also has the advantage of mass production in that it can be performed on a large number of substrates at the same time, and that it can be removed at the same time using a hydrofluoric acid-based etching solution used to remove the doped oxide film.
第１図ａ〜ｇは従来の塗布拡散法によるｐ−ｎ
接合形成の工程を説明するための図で各工程にお
ける基板の縁の部分の拡大図であり、第２図ａ〜
ｅは本発明の一実施例について説明するための図
で各工程における基板の縁の部分の拡大図であ
る。図において１１，１２は基板、２３は絶縁
膜、１４，２４はドープドオキサイド膜拡散源、
１５，２５は拡散層、１６は樹脂レジスト、１７
はメサエツチングされた部分を示す。
Figure 1 a to g are p-n obtained by the conventional coating diffusion method.
It is a diagram for explaining the process of forming a bond, and is an enlarged view of the edge portion of the substrate in each process, and FIGS.
e is a diagram for explaining one embodiment of the present invention, and is an enlarged view of the edge portion of the substrate in each step. In the figure, 11 and 12 are substrates, 23 is an insulating film, 14 and 24 are doped oxide film diffusion sources,
15, 25 is a diffusion layer, 16 is a resin resist, 17
indicates the mesa-etched part.
Claims (1)
有する層を熱拡散法により該基板中に形成する接
合形太陽電池の製造方法であつて、拡散源を塗布
法により該基板の片側表面（受光表面）側に形成
する工程に先だつて、基板を化学エツチングする
工程と、次に拡散マスクとする絶縁膜を前記基板
の裏面に形成するとともに、該基板表面に基板の
縁から表面にも回り込ませて前記絶縁膜を形成す
る工程とを備えたことを特徴とする太陽電池の製
造方法。1 A method for manufacturing a junction solar cell in which a layer having a conductivity type different from that of the substrate is formed on a semiconductor crystal substrate by a thermal diffusion method, wherein a diffusion source is applied to one surface of the substrate (light-receiving layer) by a coating method. Prior to the step of forming the film on the front surface side, there is a step of chemically etching the substrate, and then an insulating film to be used as a diffusion mask is formed on the back surface of the substrate, and at the same time, an insulating film is formed on the surface of the substrate from the edge of the substrate to the front surface. A method for manufacturing a solar cell, comprising the step of forming the insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7720380A JPS574177A (en) | 1980-06-10 | 1980-06-10 | Manufacture of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7720380A JPS574177A (en) | 1980-06-10 | 1980-06-10 | Manufacture of solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS574177A JPS574177A (en) | 1982-01-09 |
| JPS6148795B2 true JPS6148795B2 (en) | 1986-10-25 |
Family
ID=13627262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7720380A Granted JPS574177A (en) | 1980-06-10 | 1980-06-10 | Manufacture of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS574177A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001327129A (en) | 2000-05-18 | 2001-11-22 | Mitsui High Tec Inc | Manufacturing method of laminated core |
-
1980
- 1980-06-10 JP JP7720380A patent/JPS574177A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS574177A (en) | 1982-01-09 |
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