JPS6421953A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6421953A JPS6421953A JP62177313A JP17731387A JPS6421953A JP S6421953 A JPS6421953 A JP S6421953A JP 62177313 A JP62177313 A JP 62177313A JP 17731387 A JP17731387 A JP 17731387A JP S6421953 A JPS6421953 A JP S6421953A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- pattern
- insulating film
- insulating films
- gate electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000004304 visual acuity Effects 0.000 abstract 1
Landscapes
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To make it possible to let the title semiconductor device have a margin for the deviation of patterning even when the resolving power itself of lithography can not cope with miniaturization of a pattern by a method wherein a process, in which etching is conducted on the second gate electrode material using the pattern of an insulating film having a side frame, is provided. CONSTITUTION:After an impurity diffusion layer 3, with which threshold voltage will be controlled, has been formed under the surface of a semiconductor substrate 1, a plurality of the first gate electrodes 6 are formed at regular intervals through the intermediary of the first gate insulating films 4. Then, insulating films, to be used to insulation-isolate the first gate electrodes 6 and the second gate electrodes 14, and the second gate insulating film 7 are formed, and after the material 8 of the second gate electrode has been formed, the first insulating film 11 which becomes an intermediate layer is formed thereon, and the second gate electrode pattern 12 is formed. Then, the second insulating film to be used as an intermediate layer is formed, and after a side frame 13 has been formed on the sidewall of the first insulating films 12 by conducting anisotropic etching, the second gate electrodes 14 are formed by etching using the pattern formed by the above-mentioned first and the second insulating films 12 and 13 as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62177313A JPH0831537B2 (en) | 1987-07-17 | 1987-07-17 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62177313A JPH0831537B2 (en) | 1987-07-17 | 1987-07-17 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6421953A true JPS6421953A (en) | 1989-01-25 |
| JPH0831537B2 JPH0831537B2 (en) | 1996-03-27 |
Family
ID=16028797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62177313A Expired - Lifetime JPH0831537B2 (en) | 1987-07-17 | 1987-07-17 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0831537B2 (en) |
-
1987
- 1987-07-17 JP JP62177313A patent/JPH0831537B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0831537B2 (en) | 1996-03-27 |
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