JPS6427269A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6427269A JPS6427269A JP18315387A JP18315387A JPS6427269A JP S6427269 A JPS6427269 A JP S6427269A JP 18315387 A JP18315387 A JP 18315387A JP 18315387 A JP18315387 A JP 18315387A JP S6427269 A JPS6427269 A JP S6427269A
- Authority
- JP
- Japan
- Prior art keywords
- alignment margin
- film
- taken
- insulating film
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To inhibit the increase of contact resistance while also preventing defective connection by removing an alignment margin to a field insulating film and widening a contact hole while being approximately adjusted to correspond to the removed section are of the alignment margin. CONSTITUTION:An insulating film is applied onto the whole surface of a semiconductor substrate 21, and a sidewall film 27 is formed onto the sidewall of a gate electrode 25 through etching. High dosage injection is conducted into source and drain regions, high concentration source-drain regions 28 are shaped, an intermediate insulating film 29 is applied onto the semiconductor substrate 21, and contact holes 30 are bored through a normal photolithographic-etching process. When the contact holes 30 are bored, the alignment margin of size L is taken on the sidewall film 27 side, but an alignment margin is not taken on the field oxide film 22 side. Consequently, the alignment margin is not taken on the field oxide film 22 side, thus widening the areas of the contact holes 30. Accordingly, the increase of contact resistance is inhibited, and defective connection is also prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18315387A JPS6427269A (en) | 1987-07-22 | 1987-07-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18315387A JPS6427269A (en) | 1987-07-22 | 1987-07-22 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6427269A true JPS6427269A (en) | 1989-01-30 |
Family
ID=16130723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18315387A Pending JPS6427269A (en) | 1987-07-22 | 1987-07-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6427269A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0379079A (en) * | 1989-08-22 | 1991-04-04 | Fujitsu Ltd | Manufacturing method of semiconductor device |
| US5474465A (en) * | 1993-06-04 | 1995-12-12 | Kobayashi Denki Kogyo Kabushiki Kaisha | Waterproof connector |
| US5648286A (en) * | 1996-09-03 | 1997-07-15 | Advanced Micro Devices, Inc. | Method of making asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source region |
| KR100280930B1 (en) * | 1995-06-28 | 2001-02-01 | 다니구찌 이찌로오 | Semiconductor devices |
-
1987
- 1987-07-22 JP JP18315387A patent/JPS6427269A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0379079A (en) * | 1989-08-22 | 1991-04-04 | Fujitsu Ltd | Manufacturing method of semiconductor device |
| US5474465A (en) * | 1993-06-04 | 1995-12-12 | Kobayashi Denki Kogyo Kabushiki Kaisha | Waterproof connector |
| KR100280930B1 (en) * | 1995-06-28 | 2001-02-01 | 다니구찌 이찌로오 | Semiconductor devices |
| US5648286A (en) * | 1996-09-03 | 1997-07-15 | Advanced Micro Devices, Inc. | Method of making asymmetrical transistor with lightly doped drain region, heavily doped source and drain regions, and ultra-heavily doped source region |
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