JPS5753941A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5753941A JPS5753941A JP12961580A JP12961580A JPS5753941A JP S5753941 A JPS5753941 A JP S5753941A JP 12961580 A JP12961580 A JP 12961580A JP 12961580 A JP12961580 A JP 12961580A JP S5753941 A JPS5753941 A JP S5753941A
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist film
- protecting
- junction
- series rubber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000000034 method Methods 0.000 abstract 3
- 239000005062 Polybutadiene Substances 0.000 abstract 2
- 229920001971 elastomer Polymers 0.000 abstract 2
- 229920002857 polybutadiene Polymers 0.000 abstract 2
- 239000005060 rubber Substances 0.000 abstract 2
- 230000000087 stabilizing effect Effects 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To simplify processes by coating and protecting the end part of a PN junction by an insulating film containing cyclized polybutadiene series rubber which is used as a photoresist, and eliminating the formation of a stabilizing film. CONSTITUTION:For example, in the manufacture processes of an NPN transistor, a resist film 17 comprising cyclized polybutadiene series rubber is applied and formed on the upper surface of a substrate 1 whose desired diffusion process has been finished and on which oxide films 7 and 8 are formed. Then a pattern is formed by exposing and developing a resist film 17 and baked at 180-200 deg.C. Thereafter the oxide film 7 is etched, and holes 18 and 19 are provided. Then electrodes 21 and 22 are formed on the upper surface and an electrode 23 is formed on the bottom surface sequentially, and an element structure is obtained. Since the resist film 17 is not removed and used as a stabilizing film for protecting the junction together with the oxide film 7, the process can be simplified.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12961580A JPS5753941A (en) | 1980-09-17 | 1980-09-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12961580A JPS5753941A (en) | 1980-09-17 | 1980-09-17 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5753941A true JPS5753941A (en) | 1982-03-31 |
Family
ID=15013838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12961580A Pending JPS5753941A (en) | 1980-09-17 | 1980-09-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5753941A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5975648A (en) * | 1982-10-23 | 1984-04-28 | Nippon Precision Saakitsutsu Kk | Semiconductor device and manufacture thereof |
| US5242786A (en) * | 1991-02-19 | 1993-09-07 | Konica Corporation | Silver halide photographic light-sensitive material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5661130A (en) * | 1979-10-25 | 1981-05-26 | Fuji Electric Co Ltd | Semiconductor device |
-
1980
- 1980-09-17 JP JP12961580A patent/JPS5753941A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5661130A (en) * | 1979-10-25 | 1981-05-26 | Fuji Electric Co Ltd | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5975648A (en) * | 1982-10-23 | 1984-04-28 | Nippon Precision Saakitsutsu Kk | Semiconductor device and manufacture thereof |
| US5242786A (en) * | 1991-02-19 | 1993-09-07 | Konica Corporation | Silver halide photographic light-sensitive material |
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