JPS56130961A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56130961A
JPS56130961A JP3364580A JP3364580A JPS56130961A JP S56130961 A JPS56130961 A JP S56130961A JP 3364580 A JP3364580 A JP 3364580A JP 3364580 A JP3364580 A JP 3364580A JP S56130961 A JPS56130961 A JP S56130961A
Authority
JP
Japan
Prior art keywords
layer
mask
matching
mask pattern
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3364580A
Other languages
Japanese (ja)
Other versions
JPH0140502B2 (en
Inventor
Takeshi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3364580A priority Critical patent/JPS56130961A/en
Publication of JPS56130961A publication Critical patent/JPS56130961A/en
Publication of JPH0140502B2 publication Critical patent/JPH0140502B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Abstract

PURPOSE:To improve the integration of a semiconductor device by forming a resistance layer on an insulating layer on the surface of a semiconductor substrate and concurrently matching and forming the resistance layer region with the same mask as a base layer region, thereby eliminating the error of matching the mask. CONSTITUTION:A silicon dioxide layer 9, a high purity polysilicon layer 10 and silicon nitride layer 11 are sequentially formed on an element region completing silicon substrate. Subsequently, a resistance layer of photoresist and a mask pattern of a base layer are formed by a photoprocessig step. The layer 11 is selectively etched to form a resistance layer mask pattern 12 and a base layer mask pattern 13 on the layer 10. Since the relative position of both the mask patterns is determined by the photoprocess in this case, it is accurate and the later steps do not require large mask allowance. Thus, the error of matching the masks can be reduced and the integration can be improved.
JP3364580A 1980-03-17 1980-03-17 Manufacture of semiconductor device Granted JPS56130961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3364580A JPS56130961A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3364580A JPS56130961A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56130961A true JPS56130961A (en) 1981-10-14
JPH0140502B2 JPH0140502B2 (en) 1989-08-29

Family

ID=12392174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3364580A Granted JPS56130961A (en) 1980-03-17 1980-03-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56130961A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108755A (en) * 1989-09-22 1991-05-08 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108755A (en) * 1989-09-22 1991-05-08 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0140502B2 (en) 1989-08-29

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