JPS5623748A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5623748A
JPS5623748A JP9974279A JP9974279A JPS5623748A JP S5623748 A JPS5623748 A JP S5623748A JP 9974279 A JP9974279 A JP 9974279A JP 9974279 A JP9974279 A JP 9974279A JP S5623748 A JPS5623748 A JP S5623748A
Authority
JP
Japan
Prior art keywords
laser
semiconductor
annealing
neutralize
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9974279A
Other languages
Japanese (ja)
Other versions
JPS588128B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP54099742A priority Critical patent/JPS588128B2/en
Publication of JPS5623748A publication Critical patent/JPS5623748A/en
Publication of JPS588128B2 publication Critical patent/JPS588128B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To eliminate or reduce the density of recombination center or crystal defects in the semiconductor device by optically annealing the surface of semiconductor with laser or the like, and optically annealing it in atmosphere added with halogen element or inert gas to H2 or He activated. CONSTITUTION:An Si substrate is irradiated with CW laser of 70W power or the like to anneal the layer of approx. 3mu. Then, it is contained in an atmosphere added with 30-70% of He to H2 or H2, or with 0.1-3% of halogen element such as F or the like in furnace, and the furnace is excited by high frequency induction of 1-100MHz at -70 deg.C-+200 deg.C. The H of nascent state is immersed without any trouble to combine with Si or O2 existed in the semiconductor, insulator or their boundary to neutralize it. In this manner it is laser annealed, and then induction annealed to neutralize the defect which cannot be treated by the laser annealing in depth so as to improve the property of the device very effectively.
JP54099742A 1979-08-05 1979-08-05 Semiconductor device manufacturing method Expired JPS588128B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54099742A JPS588128B2 (en) 1979-08-05 1979-08-05 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54099742A JPS588128B2 (en) 1979-08-05 1979-08-05 Semiconductor device manufacturing method

Publications (2)

Publication Number Publication Date
JPS5623748A true JPS5623748A (en) 1981-03-06
JPS588128B2 JPS588128B2 (en) 1983-02-14

Family

ID=14255459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54099742A Expired JPS588128B2 (en) 1979-08-05 1979-08-05 Semiconductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS588128B2 (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166309A (en) * 1981-03-31 1982-10-13 Fujitsu Ltd Production of amorphous silicon
JPS5899114A (en) * 1981-12-04 1983-06-13 Matsushita Electric Ind Co Ltd Manufacture of amorphous silicon hydride film
JPS58114423A (en) * 1981-12-28 1983-07-07 Fujitsu Ltd Manufacture of semiconductor device
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
JPS58182816A (en) * 1982-04-20 1983-10-25 Toshiba Corp Recrystallizing method of silicon family semiconductor material
JPS6247116A (en) * 1985-08-26 1987-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPS6251210A (en) * 1985-08-30 1987-03-05 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6252924A (en) * 1985-09-01 1987-03-07 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6254422A (en) * 1985-08-08 1987-03-10 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6269608A (en) * 1985-09-24 1987-03-30 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5561088A (en) * 1994-02-10 1996-10-01 Sony Corporation Heating method and manufacturing method for semiconductor device
US5620910A (en) * 1994-06-23 1997-04-15 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride
US5739043A (en) * 1992-03-25 1998-04-14 Kanegafuchi Chemical Industry Co., Ltd. Method for producing a substrate having crystalline silicon nuclei for forming a polysilicon thin film
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
US6200872B1 (en) * 1997-09-30 2001-03-13 Fujitsu Limited Semiconductor substrate processing method
US6271066B1 (en) 1991-03-18 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
EP1306892A1 (en) * 2000-07-11 2003-05-02 Shin-Etsu Handotai Co., Ltd Single crystal cutting method
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US7038302B2 (en) 1993-10-12 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Glass substrate assembly, semiconductor device and method of heat-treating glass substrate

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57166309A (en) * 1981-03-31 1982-10-13 Fujitsu Ltd Production of amorphous silicon
JPH0219185B2 (en) * 1981-03-31 1990-04-27 Fujitsu Ltd
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
JPS5899114A (en) * 1981-12-04 1983-06-13 Matsushita Electric Ind Co Ltd Manufacture of amorphous silicon hydride film
JPH034622B2 (en) * 1981-12-04 1991-01-23 Matsushita Electric Ind Co Ltd
JPS58114423A (en) * 1981-12-28 1983-07-07 Fujitsu Ltd Manufacture of semiconductor device
JPS58182816A (en) * 1982-04-20 1983-10-25 Toshiba Corp Recrystallizing method of silicon family semiconductor material
JPS6254422A (en) * 1985-08-08 1987-03-10 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6247116A (en) * 1985-08-26 1987-02-28 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPS6251210A (en) * 1985-08-30 1987-03-05 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6252924A (en) * 1985-09-01 1987-03-07 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS6269608A (en) * 1985-09-24 1987-03-30 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5821175A (en) * 1988-07-08 1998-10-13 Cauldron Limited Partnership Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface
US6271066B1 (en) 1991-03-18 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US5739043A (en) * 1992-03-25 1998-04-14 Kanegafuchi Chemical Industry Co., Ltd. Method for producing a substrate having crystalline silicon nuclei for forming a polysilicon thin film
US7038302B2 (en) 1993-10-12 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Glass substrate assembly, semiconductor device and method of heat-treating glass substrate
US5561088A (en) * 1994-02-10 1996-10-01 Sony Corporation Heating method and manufacturing method for semiconductor device
US5620910A (en) * 1994-06-23 1997-04-15 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride
US6200872B1 (en) * 1997-09-30 2001-03-13 Fujitsu Limited Semiconductor substrate processing method
EP1306892A1 (en) * 2000-07-11 2003-05-02 Shin-Etsu Handotai Co., Ltd Single crystal cutting method
EP1306892A4 (en) * 2000-07-11 2007-10-10 Shinetsu Handotai Kk Single crystal cutting method

Also Published As

Publication number Publication date
JPS588128B2 (en) 1983-02-14

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