JP2002083768A5 - Method for manufacturing single crystal thin film - Google Patents
Method for manufacturing single crystal thin film Download PDFInfo
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- JP2002083768A5 JP2002083768A5 JP2000269261A JP2000269261A JP2002083768A5 JP 2002083768 A5 JP2002083768 A5 JP 2002083768A5 JP 2000269261 A JP2000269261 A JP 2000269261A JP 2000269261 A JP2000269261 A JP 2000269261A JP 2002083768 A5 JP2002083768 A5 JP 2002083768A5
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- thin film
- single crystal
- crystal thin
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Description
【特許請求の範囲】
【請求項１】 絶縁基体上に非単結晶薄膜を形成する工程と、
該非単結晶薄膜に第１の熱処理を施して多結晶粒が略規則的に整列した多結晶薄膜を形成する工程と、
該多結晶薄膜に第２の熱処理を施して前記多結晶粒が結合した単結晶薄膜を形成する工程とを有することを特徴とする単結晶薄膜の製造方法。
【請求項２】 前記第１及び第２の熱処理の少なくともいずれかがレーザー光照射であることを特徴とする請求項１記載の単結晶薄膜の製造方法。
【請求項３】 前記第１及び第２の熱処理はレーザー光照射により行われ、前記第２の熱処理におけるレーザー光強度は前記第１の熱処理におけるレーザー光強度よりも低いことを特徴とする請求項１記載の単結晶薄膜の製造方法。
【請求項４】 前記第２の熱処理は多結晶薄膜の融点よりも低い温度であることを特徴とする請求項１記載の単結晶薄膜の製造方法。
【請求項５】 前記第１及び第２の熱処理の少なくともいずれかがエキシマレーザーのレーザー光照射であることを特徴とする請求項１記載の単結晶薄膜の製造方法。
【請求項６】 前記第１及び第２の熱処理の少なくともいずれかが線状レーザー光照射であることを特徴とする請求項１記載の単結晶薄膜の製造方法。
【請求項７】 前記線状レーザー光照射を光照射の長手方向に垂直な走査方向に重ね合わせ照射することを特徴とする請求項１記載の単結晶薄膜の製造方法。
【請求項８】 前記第１及び第２の熱処理の少なくともいずれかが面状レーザー光照射であることを特徴とする請求項１記載の単結晶薄膜の製造方法。
【請求項９】 前記面状レーザー光照射はマスクを用いて照射することを特徴とする請求項１記載の単結晶薄膜の製造方法。
【請求項１０】 前記第２の熱処理はファーネスアニ−ル、ランプアニ−ルまたはストリップヒーターアニールであることを特徴とする請求項１記載の単結晶薄膜の製造方法。
【請求項１１】 前記第１及び第２の熱処理の少なくともいずれかは、実質的に真空中、不活性ガス雰囲気中、若しくは非酸化性ガス雰囲気中で行うことを特徴とする請求項１記載の単結晶薄膜の製造方法。
[Claims]
A step of forming a non-single-crystal thin film on an insulating substrate;
Subjecting the non-single-crystal thin film to a first heat treatment to form a polycrystalline thin film in which polycrystalline grains are arranged substantially regularly;
Subjecting the polycrystalline thin film to a second heat treatment to form a single crystal thin film in which the polycrystalline grains are combined.
2. The method according to claim 1, wherein at least one of the first and second heat treatments is laser light irradiation.
3. The method according to claim 1, wherein the first and second heat treatments are performed by laser light irradiation, and the laser light intensity in the second heat treatment is lower than the laser light intensity in the first heat treatment. 2. The method for producing a single crystal thin film according to 1.
4. The method according to claim 1, wherein the second heat treatment is performed at a temperature lower than a melting point of the polycrystalline thin film.
5. The method according to claim 1, wherein at least one of the first and second heat treatments is irradiation with an excimer laser.
6. The method according to claim 1, wherein at least one of the first and second heat treatments is irradiation with a linear laser beam.
7. The method for producing a single crystal thin film according to claim 1, wherein the linear laser light irradiation is superposed and irradiated in a scanning direction perpendicular to the longitudinal direction of the light irradiation.
8. The method according to claim 1, wherein at least one of the first and second heat treatments is irradiation with a planar laser beam.
9. The method according to claim 1, wherein the irradiation of the planar laser light is performed using a mask.
10. The method according to claim 1, wherein the second heat treatment is furnace annealing, lamp annealing, or strip heater annealing.
11. The method according to claim 1, wherein at least one of the first and second heat treatments is performed substantially in a vacuum, in an inert gas atmosphere, or in a non-oxidizing gas atmosphere. A method for producing a single crystal thin film.
【０００１】
【発明の属する技術分野】
本発明は液晶ディスプレイなどに用いられる薄膜トランジスタ（ＴＦＴ）や、メモリーその他の電子デバイス等に適用される単結晶薄膜の製造方法に関するものであり、特にガラス基板などの絶縁基体上に単結晶薄膜を形成する方法に関する。
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for producing a thin film of a single crystal applied to a thin film transistor (TFT) used for a liquid crystal display or the like, a memory or other electronic devices, and particularly to a method of forming a single crystal thin film on an insulating substrate such as a glass substrate. directed to a method of.
そこで、本発明は従来の多結晶薄膜とは一線を画し高性能で特性の安定したデバイスの作成に好適であってしかもその製造工程も短い時間で十分な単結晶薄膜の製造方法を提供することを目的とする。 Accordingly, the present invention provides a method for producing a single crystal thin film which is distinct from conventional polycrystalline thin films, is suitable for producing a device having high performance and stable characteristics, and has a sufficient production process in a short time. The purpose is to:
【００１６】
【発明の実施の形態】
以下、本発明の単結晶薄膜の製造方法について図面を参照しながら説明する。
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a method for producing a single crystal thin film of the present invention will be described with reference to the drawings.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000269261A JP2002083768A (en) | 2000-09-05 | 2000-09-05 | Method of manufacturing single crystal film, and single crystal film substrate, and semiconductor device |
| KR1020010054334A KR100862542B1 (en) | 2000-09-05 | 2001-09-05 | Single crystal thin film semiconductor devices and its making methods |
| CN01145068A CN1354495A (en) | 2000-09-05 | 2001-09-05 | Semiconductor film and producing method and equipment, and method for producing single crystal film |
| US09/946,898 US6746942B2 (en) | 2000-09-05 | 2001-09-05 | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
| US10/828,882 US7365358B2 (en) | 2000-09-05 | 2004-04-21 | Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000269261A JP2002083768A (en) | 2000-09-05 | 2000-09-05 | Method of manufacturing single crystal film, and single crystal film substrate, and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002083768A JP2002083768A (en) | 2002-03-22 |
| JP2002083768A5 true JP2002083768A5 (en) | 2007-03-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000269261A Pending JP2002083768A (en) | 2000-09-05 | 2000-09-05 | Method of manufacturing single crystal film, and single crystal film substrate, and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002083768A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004087535A (en) * | 2002-08-22 | 2004-03-18 | Sony Corp | Method for manufacturing crystalline semiconductor material and method for manufacturing semiconductor device |
| JP4741204B2 (en) * | 2003-06-30 | 2011-08-03 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP5005881B2 (en) * | 2004-05-13 | 2012-08-22 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| KR100675936B1 (en) | 2004-08-06 | 2007-02-02 | 비오이 하이디스 테크놀로지 주식회사 | Method for forming single crystalline silicon film |
| JP4674092B2 (en) * | 2005-01-21 | 2011-04-20 | 株式会社 日立ディスプレイズ | Manufacturing method of display device |
| TW200703667A (en) | 2005-07-05 | 2007-01-16 | Adv Lcd Tech Dev Ct Co Ltd | Thin-film transistor, method for manufacturing thin-film transistor, and display using thin-film transistors |
| EP2899749A1 (en) * | 2014-01-24 | 2015-07-29 | Excico France | Method for forming polycrystalline silicon by laser irradiation |
-
2000
- 2000-09-05 JP JP2000269261A patent/JP2002083768A/en active Pending
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