JP2002261040A - Heat treatment device and method for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for activating an impurity element added to a semiconductor film in heat treatment for short time and performing a gettering processing on the semiconductor film without deforming a substrate in the manufacturing processor of a semiconductor device where the substrate having low heat resistance such as glass is used, and to provide a heat treatment device where such heat treatment is realized. SOLUTION: The device is provided with a reaction tube, an exhausting means depressurizing the reaction tube, a means introducing gas heating or cooling the object to be treated which is installed in the reaction tube, a light source heating the object to be treated which is installed in the reaction tube, and a means for flickering the light source in a pulse shape. Heating by the object to be treated by the light source is provided with a first means which flickers in a pulse shape at the period of not more than one second and heats the object to be treated, and a second means which flickers in the pulse shape at the period of not less than one second and which heats the object to be treated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a heat treatment apparatus and a method for manufacturing a semiconductor device using the heat treatment apparatus. In particular, the present invention relates to a heat treatment apparatus for heating an object to be processed by radiation from a light source such as a lamp, and a method for manufacturing a semiconductor device using the heat treatment apparatus is applied to a semiconductor device using a semiconductor film having a crystal structure.

[0002]

2. Description of the Related Art Heat treatment is an essential step for activating impurities added to a semiconductor and for forming a contact between a semiconductor and an electrode. Among them, a hot wall type horizontal or vertical furnace annealing furnace is known as a typical heat treatment apparatus.

[0003] However, monolithic integrated circuits manufactured using semiconductors are increasingly required to have extremely precise processing accuracy with miniaturization. In particular, the formation of a shallow junction requires a heat treatment technique that minimizes the diffusion of impurities, and a method that requires a considerable amount of time for heating and cooling, such as a furnace annealing furnace, is not considered appropriate. I have.

On the other hand, as a heat treatment technique for performing rapid heating and rapid cooling, rapid thermal annealing (Rapid Thermal Anneal) is used.
al: RTA) has been developed, and a method has been developed in which heat is applied instantaneously for several tens of seconds to several microseconds. RTA is known as a method for rapidly heating a substrate mainly using an infrared lamp and performing heat treatment in a short time.

[0005] By the way, an integrated circuit is not only manufactured using a semiconductor substrate such as a silicon wafer, but also an integrated circuit.
A method using a thin film transistor (hereinafter, referred to as TFT) formed on a substrate such as glass or quartz has also been developed. Although there are differences in the structure and manufacturing method of TFT,
In any case, better electrical characteristics are obtained by forming a semiconductor film having a crystalline structure (hereinafter, referred to as a crystalline semiconductor film) than forming an active layer for forming a channel with an amorphous semiconductor film. Can be.

If a quartz substrate is used, it can withstand a heat treatment at 900 ° C., and it is possible to apply a manufacturing technique based on a semiconductor substrate. On the other hand, when the size of the substrate is increased as in a liquid crystal display device, a prerequisite is to use an inexpensive glass substrate in order to reduce costs. Commercially available or mass-produced glass substrates for electronic devices such as liquid crystal display devices use aluminoborosilicate glass or barium borosilicate glass with a reduced concentration of the contained alkali element. Since the heat-resistant temperature is about 650 ° C. at the most, the upper limit of the heat treatment temperature is inevitably determined in the vicinity thereof.

For example, an amorphous silicon film can be crystallized by 6
A heat treatment temperature of several hours to several tens hours at 00 ° C. or higher is required. To perform crystallization in a shorter time, it is necessary to raise the temperature. However, increasing the heat treatment temperature beyond the strain point causes irreversible deformation of the glass substrate, and is not a practical method. The laser annealing method adopted for this purpose is to irradiate a high energy density laser beam condensed by an optical system for crystallization. A pulsed excimer laser is typically used, and the semiconductor film is melted and crystallized through a liquid state while the irradiation time of the laser light is several tens of nanoseconds.

[0010] Of course, the crystallization of the amorphous semiconductor film has been attempted by the RTA method, but it requires a longer heating time than the laser annealing method. Also, from the viewpoint of heating temperature, RTA
Since crystallization by the crystallization method is a solid phase growth, it is not possible to obtain good quality crystals as compared with the laser annealing method, and the temperature of the substrate also rises considerably, so it is necessary to use a heat-resistant quartz substrate . In a glass substrate, it has been confirmed that the heating of the lamp light irradiated for crystallization for several tens of seconds raises the temperature of the substrate, causing distortion and deformation.

[0009]

The crystallization of the semiconductor film by heat treatment and the activation of the added impurities are accelerated by heating at a higher temperature, even if the conditions have an optimum temperature range. The heat treatment is completed in a short time. Even when the RTA method is used, when a glass substrate having low heat resistance is used, processing conditions in which the glass substrate is heated to a temperature higher than the heat resistance temperature cannot be applied. A longer processing time is required. However, since RTA is based on single-wafer processing, an increase in heat treatment time causes a decrease in throughput.

[0010] The RTA method is capable of heating to a high temperature in a short time, and has a potentially higher processing capability than the furnace annealing method even in a single-wafer method. However, in the conventional RTA method, it is necessary to increase the heating temperature instead of shortening the heating time. In order to obtain a desired effect in activation or gettering treatment, the glass is heated to a temperature higher than the strain point of the glass and further to the softening point. There is a need. For example, if only a heat treatment is performed at 800 ° C. for 60 seconds to perform the gettering process, the glass substrate is bent and deformed by its own weight.

Means for using a furnace annealing furnace for batch processing is also considered, but when the size of the substrate to be processed is increased, the size of the apparatus is increased, and not only the installation area is increased but also the inside of the large capacity furnace is heated uniformly. Therefore, there is a problem that power consumption increases.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems, and in a process of manufacturing a semiconductor device using a substrate having low heat resistance such as glass, a semiconductor film can be formed by a short heat treatment without deforming the substrate. It is an object of the present invention to provide a method for activating an added impurity element or performing a gettering process on a semiconductor film and a heat treatment apparatus capable of performing such a heat treatment.

[0013]

The heat treatment apparatus of the present invention for solving the above-mentioned problems comprises a reaction tube and a means for introducing a gas for heating or cooling an object to be processed installed in the reaction tube. A light source for heating an object to be processed, which is installed in the reaction tube, and means for blinking the light source in a pulsed manner. Further, another configuration is such that a reaction tube and a unit for introducing a gas heated or cooled to a room temperature or lower at a temperature lower than or equal to a temperature of an object to be processed installed in the reaction tube are installed in the reaction tube. A light source for heating the object,
Means for blinking the light source in a pulsed manner.
In addition to such a configuration, an exhaust means for reducing the pressure inside the reaction tube may be provided.

The heating of the object to be processed by the light source is performed in a first cycle in which the object is heated by flashing in a pulse shape at a cycle of 1 second or less.
Means, and second means for heating the object to be processed by blinking in a pulsed manner at a period of 1 second or more. This is done by changing the configuration of the power supply circuit that turns on the light source, although the light source is shared.

As the light source, a halogen lamp, a metal halide lamp, a high-pressure mercury lamp, a high-pressure sodium lamp, a xenon lamp, or the like is employed, and in any case, a light having a wavelength band which is absorbed by the object to be processed is used.
For example, in the case of a silicon film, a halogen lamp or a metal halide lamp that emits light in a wavelength band of 0.5 to 1.5 μm is suitable.

As a gas introduced into the reaction tube, an inert gas such as nitrogen, helium, argon, krypton, or xenon is used to prevent the gas from reacting with the object.

Further, according to the method of manufacturing a semiconductor device of the present invention using the heat treatment apparatus having such a configuration, a heated gas is supplied into the reaction tube, and a light source provided outside the reaction tube is pulsed. , And heats the object placed in the reaction tube. Further, after the heating is completed, a gas cooled to room temperature or lower may be supplied into the reaction tube to cool the object, thereby improving the throughput. Further, the same manufacturing method can be applied while maintaining the inside of the reaction tube under reduced pressure. In the present invention, a semiconductor device generally refers to a device that can function by utilizing semiconductor characteristics.

The method of heating the object to be processed is such that, in addition to heating the object to be processed with the heated inert gas, a light source is turned on and off in a pulsed manner at a cycle of 1 second or less to heat the object to be processed. There is also adopted a method of performing the step and the second step of heating the object by blinking the light source in a pulsed manner at a cycle of 1 second or longer. This first step is performed for preheating the object to be processed to a predetermined temperature, and the second heat treatment is for performing a desired heat treatment such as crystallization, activation, and gettering.

The object to be processed is a semiconductor film or the like formed on a substrate such as glass or quartz, and an impurity region to which an impurity of one conductivity type is added may be formed in the semiconductor film. Further, a gate insulating film, a gate electrode, and the like may be formed.

As shown in FIG. 6, the heat treatment using the heat treatment apparatus of the present invention is roughly divided into three stages of preheating, heat treatment, and cooling treatment. In the preheating, the object to be processed is heated by the inert gas heated by the heating means.
The heating temperature is about 300 to 500 ° C., and the light source is turned on in a pulsed manner while maintaining the temperature to perform the heat treatment. The light emission time per light source is 0.1 to 60 seconds, preferably 0.1 to 20 seconds, and the light from the light source is irradiated a plurality of times. Alternatively, the holding time of the maximum temperature of the semiconductor film is set to 0.
The light from the light source is radiated in a pulse shape so as to be 5 to 5 seconds. Thereafter, in the cooling treatment, the object to be processed is cooled to 200 ° C. or lower by an inert gas cooled to room temperature or lower than room temperature supplied through a cooling unit.

The preheating may be performed not only by the heated inert gas but also by flashing the light source at a cycle of 1 second or less and irradiating the pulsed light a plurality of times as shown in FIG. A pulse forming network circuit is used for blinking, and a large pulse-like current is efficiently supplied to the light source.
Of course, preliminary heating may be performed by combining such heating with the pulsed light and heating with the heated inert gas.

[0022]

Embodiments of the present invention will be described below in detail with reference to the drawings. The configuration of the heat treatment apparatus of the present invention will be described with reference to FIG. The heat treatment apparatus shown in FIG. 1 includes a load chamber 102, an unload chamber 103, a preheating chamber 104, a heat treatment chamber 105, and a laser processing chamber 106 around a transfer chamber 101 having a transfer unit 108 for moving a substrate. It has a configuration. These rooms are equipped with exhaust means 11
1 allows the pressure to be maintained at a reduced pressure. Further, it is connected to the transfer chamber 101 via gates 107a to 107e.

The heat treatment chamber 105 is provided with a light source 118 and is turned on by a power supply unit 119. Further, a turbo-molecular pump 109 and a dry pump 110 are provided as an evacuation unit 111 for reducing the pressure in the heat treatment chamber 105. Of course, other vacuum pumps can be used for the evacuation unit 111.

As the gas introduced into the heat treatment chamber 105, an inert gas such as nitrogen, helium, argon, krypton, or neon is used. In any case, it is desirable that the medium be a medium having a small absorptance to the radiant heat of the light source 118. This gas is supplied from a cylinder 116b. As a means for supplying such a gas, a gas heating means 112b and a cooling means 113b are provided before the gas is introduced into the heat treatment chamber 105. This is for heating or cooling the object to be processed installed in the heat treatment chamber 105, and the gas is introduced into the heat treatment chamber 105 through one of these paths. The gas supplied to the heat treatment chamber 105 is circulated by the circulator 115b to cool the substrate. in this case,
It is desirable to provide a purifier 114b in the middle to maintain the purity of the gas. The purifier 114b may use a getter material or a cold trap using liquid nitrogen.

The light source 118 is turned on in a pulse by the power supply unit 119. The turning on and off of the light source 118 and the flow rate of the gas flowing into the heat treatment chamber 105 are changed in conjunction with each other. The object to be processed is rapidly heated by turning on the light source 118. During the heating period, the heating is performed to a set temperature (for example, 1150 ° C.) at a heating rate of 100 to 200 ° C./sec. The set temperature is a temperature detected by the temperature detecting means placed near the substrate to be processed. As a temperature detecting means, a thermopile, a thermocouple, or the like is used.

For example, if heating is performed at a heating rate of 150 ° C./sec, it can be heated to 1100 ° C. in less than 7 seconds. Thereafter, the temperature is maintained at the set temperature for a certain period of time, and the light source is turned off.
The holding time is 0.5 to 5 seconds. Therefore, the continuous lighting time of the light source is 0.1 second or more, and does not exceed 90 seconds.

As a light source, a halogen lamp, a metal halide lamp, a high-pressure mercury lamp, a high-pressure sodium lamp, a xenon lamp, or the like can be used. Lighting of the light source 118 is performed in a first step of heating the object by blinking in a pulse shape at a period of 1 second or less, and a second step of heating the object by blinking in a pulse shape at a period of 1 second or more. It is performed separately.
The first step is performed for preheating the object to be processed,
Heat to about 0 to 400 ° C. The second stage is heating for the purpose of heat treatment, in which the lighting time of the light source 118 is extended to heat the substrate to a desired temperature.

The pulsed lighting of the light source 118 is performed to selectively heat a predetermined region of the object to be processed. For example, in the case where a semiconductor film on a glass substrate is used as an object to be processed, if a halogen lamp having a strong spectral distribution in an infrared region is used, the semiconductor film is heated to substantially 600 ° C. or higher without deforming the glass substrate. be able to.

FIG. 8 shows an example of a circuit that enables pulse-like discharge in a short cycle, such as the first stage of heating a workpiece by blinking in a pulse-like manner in a cycle of 1 second or less. .
The circuit in FIG. 8A is a pulse forming network (P
The pulse waveform is a square wave by applying a damped oscillation of three times cycle by L2, C2 and R to critical braking discharge by L1, C1 and R. With such a discharge circuit, the pulse width is 10 nanoseconds to 1 nanosecond.
Output of about 10 MA is possible in 00 milliseconds. The duration of the discharge can be varied by the values of L and C and the number of connection stages. The output is the light sources H1 to Hn as shown in FIG.
Supplied to On the other hand, the second stage of heating the object by blinking in a pulsed manner at a cycle of 1 second or longer is performed using a battery or a flywheel generator.

The heat treatment is performed by evacuation means 111 for 13.3P.
The object to be processed is set in the heat treatment chamber 105 kept under reduced pressure of a or less, and as a first step, a gas heated by the heating means 112b is introduced, and 13.3 to 1.33 × 10 ⁴ P
keep in a. The object to be processed is 200 to 4 depending on the introduced gas.
It is heated to about 00. This gas is supplied to the purifier 114b,
It may be circulated through the path of the circulator 115b and the heating means 112b. In this first stage, the light source 118
Heating which blinks at short intervals of less than seconds may be added. After that, as a second step, heat treatment is performed by irradiating the light source 118 with pulsed light having a lighting time of 1 to 60 seconds a plurality of times. After the predetermined heat treatment is completed, the gas inflow path is changed and the gas is introduced through the cooling means 113b. This is performed to cool the object to be processed, and the temperature of the gas to be cooled is from room temperature to the temperature of liquid nitrogen.

As described above, in the heat treatment apparatus of the present invention, in order to reduce the time required for heating and cooling the object to be processed, a gas heated to a temperature above room temperature or cooled from room temperature to a temperature lower than room temperature is used. It is characterized by. In addition, by performing the treatment under reduced pressure, the heat insulating property is increased and the thermal efficiency is improved.
By shortening the actual heating time and irradiating light selectively absorbed by the semiconductor film from the light source, it is possible to selectively heat only the semiconductor film without heating the substrate itself so much. Become.

The preheating chamber 104 is used for heating and cooling the object to be processed more positively.
Is heated or cooled by the heating means 112a or the cooling means 113a, and is blown to the object to be processed. Similarly, the preheating chamber 104 is maintained at a reduced pressure by the exhaust means 111, and the introduced gas can be circulated by the purifier 114a and the circulator 115a.

The attached laser processing chamber 106 is a processing chamber for performing a heat treatment on the object to be processed by laser light.
A laser oscillator 121 and an optical system 122 for irradiating the object to be processed with laser light at a predetermined energy density are provided.

FIG. 2 is a view for explaining details of the heat treatment chamber 105. The reaction tube 1 made of quartz is placed in the heat treatment chamber 105.
60, and a light source 118 is provided outside thereof.
An object to be processed is placed in the reaction tube 160, and the substrate to be processed is placed on the pins in order to make the temperature distribution uniform. The decompression means 111 is preferably a turbo molecular pump 1
09 and a dry pump 111, which are used to exhaust the gas in the reaction tube and maintain the pressure in the reaction tube. The measurement of the temperature heated by the light source 118 is performed by the temperature detecting means 124 using a thermocouple. A sensor 125 such as a thermopile is provided in the reaction tube 160, and indirectly monitors the heating temperature of the object.

In the heat treatment under reduced pressure, efficient heating can be achieved by using a wavelength band in which radiation from the light source is absorbed by the object. In the heat treatment under reduced pressure, the oxygen concentration is reduced and oxidation of the object to be processed can be suppressed.

The light source 118 is turned on and off by the power supply unit 119. The computer 120 centrally controls the operation of the power supply unit 119, the gas heating means 112b and the gas cooling means 113b, the purifier 114b, and the circulator 115b.

The reaction tube 160 has a double structure, and an object to be processed is provided inside the inner tube 161. The inert gas supplied via the heating means 112 b or the cooling means 113 b is supplied between the reaction tube (outer tube) 160 and the inner tube 161, and passes through the pores provided in the inner tube 161 to the inside of the inner tube 161. It is supplied to.

FIG. 3 shows another example of the configuration of the heat treatment chamber 105, in which a radiator 162 is used as means for heating and cooling the inert gas supplied into the reaction tube 160, and is directly connected to the reaction tube 160. . Radiator 162
Is connected to the heat exchanger 126 to perform heating or cooling. Other configurations are the same as those in FIG.

FIG. 4 shows the configuration of the preheating chamber 104, in which the cylinder 116a is connected to the heating unit 112a or the cooling unit 1a.
The inert gas supplied through the porous material 107 is supplied through the porous material 107.
Through the preheating chamber 104. Although a shower plate having many pores may be used, it is preferable to use a porous material formed of ceramic or the like in order to uniformly blow the inert gas to the substrate 100. In addition, the configuration of the exhaust unit 111 and the like follows the description of FIG.

FIG. 5 shows an example of the constitution of the means for heating and cooling the inert gas suitable for the heat treatment apparatus of the present invention. FIG.
(A) shows an example of a heating means, in which a fin 152 made of high-purity titanium or tungsten is provided inside a cylinder 150 through which a gas passes. The cylinder 150 is formed of translucent quartz or the like, and heats the fins 152 by radiation of a light source 150 provided outside the cylinder. The gas is heated by contacting the fins 152. By providing a heat source outside the cylinder 150, contamination is prevented and the purity of the gas to be passed can be maintained.

FIG. 5B shows an example of the cooling means. Fins 154 made of high-purity titanium or tungsten are provided in a cylinder 153 through which gas passes, and connected to the heat exchanger 155 by a heat pipe. ing. The gas contacts the fins 154 and is heated.

As described above, according to the present invention, even when a substrate having low heat resistance such as glass is used, activation of impurity elements added to a semiconductor film by heat treatment in a short time,
A method for performing gettering treatment of a semiconductor film and such heat treatment can be performed. Such a heat treatment can be incorporated into a semiconductor device manufacturing process. The configuration of the heat treatment apparatus shown in this embodiment is an example, and is not limited to the configuration shown here. The heat treatment apparatus of the present invention is characterized by a means for cooling a substrate to be processed and a structure for heating a semiconductor film by irradiating light from a light source in a pulsed manner. The configuration is not particularly limited.

Of course, the heat treatment apparatus of the present invention can be used not only for a TFT but also for a heat treatment step of an integrated circuit using a semiconductor substrate.

[0044]

[Embodiment 1] An embodiment in which an amorphous semiconductor film is crystallized using the heat treatment apparatus of the present invention will be described with reference to FIG.

In FIG. 9, a substrate 201 is a light-transmitting substrate made of aluminoborosilicate glass or barium borosilicate glass. The thickness is 0.3 to 1.1 mm. An amorphous silicon film 203 is formed on the substrate 201.
Is formed by a plasma CVD method. Further, a blocking layer 201 is formed so that an impurity element is not mixed into the amorphous silicon film 203 from the substrate 201 by heat treatment or the like.
Usually, an insulating film containing silicon as a component is used, but in this embodiment, a first silicon oxynitride film formed by a plasma CVD method from SiH ₄ , N ₂ O, and NH ₃ is used.
A second silicon oxynitride film formed by a plasma CVD method from nm, SiH ₄ , and N ₂ O is formed to a thickness of 100 nm, and these are laminated to form a blocking layer 202.

On the amorphous silicon film 203, a metal element capable of lowering the heating temperature required for crystallization of silicon is added. Examples of such catalytic metal elements include iron (Fe), nickel (Ni), and cobalt (C
o), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (I
r), platinum (Pt), copper (Cu), gold (Au), and the like, and one or more selected from these can be used.

The nickel-containing layer 204 is formed by applying a nickel acetate salt solution containing 0.1 to 100 ppm, preferably 1 to 5 ppm, of nickel by weight using a spinner. In this case, in order to improve the familiarity of the solution, as a surface treatment of the amorphous silicon film 203, an extremely thin oxide film is formed with an ozone-containing aqueous solution, and the oxide film is mixed with hydrofluoric acid and a hydrogen peroxide solution. After forming a clean surface by etching, an ultrathin oxide film is preferably formed by treating again with an ozone-containing aqueous solution. Since the surface of silicon is inherently hydrophobic, a nickel acetate solution can be uniformly applied by forming an oxide film in this manner.

An object to be processed in such a form is
It is installed in the reaction tube 206 maintained at a reduced pressure of 3.3 Pa or less. Then, preliminary heating is performed by introducing an inert gas heated to 250 ° C. by the heating means. The preheating time is arbitrary, but is kept in that state for 5 minutes as an example. Alternatively, in the case where heating is performed in advance in another preheating chamber, preheating for one minute can be performed.

Thereafter, the light source is turned on and off with a lighting time of 40 seconds and a lighting interval of 30 seconds, and irradiation with such pulsed light is repeated a plurality of times (typically 2 to 10 times) to perform the heat treatment. Do. Although the temperature of the semiconductor film instantaneously heated by the pulsed light is not directly measured, the temperature measured by a temperature sensor using a thermocouple is 125.
The radiation intensity is adjusted to be 0 ° C. By this heat treatment, the amorphous silicon film can be crystallized. Thereafter, the introduction path of the inert gas is switched, and cooling is performed by the inert gas cooled to room temperature or lower by the cooling means.

In an amorphous silicon film formed by a plasma CVD method, about 10 to 30 atomic% of hydrogen remains in the film, and crystallization may be performed after the hydrogen is desorbed by heating. Usually done. As heat treatment for that,
The semiconductor film may be heated to about 500 ° C. by irradiating pulse light having a lighting time of about 0.1 second a plurality of times to perform dehydrogenation treatment. This dehydrogenation treatment can be further promoted by performing the treatment under reduced pressure.

In this manner, the amorphous silicon film can be crystallized in a heating time of several seconds to ten minutes to several minutes. Even if a glass substrate having a strain point of 660 ° C. is used, the substrate can be distorted. Crystallization can be performed without any problem.

[Embodiment 2] A method of manufacturing a TFT using the crystalline semiconductor film thus manufactured will be described with reference to FIGS.

First, in FIG. 10A, island-shaped crystalline semiconductor films 303 and 304 are formed on a light-transmitting substrate 301 of aluminoborosilicate glass or barium borosilicate glass. Further, a first insulating film 302 having a thickness of 50 to 200 nm is formed between the substrate 301 and the semiconductor film by combining one or a plurality of silicon nitride, silicon oxide, and silicon nitride oxide.

As an example of the first insulating film 302, a silicon oxynitride film is formed to a thickness of 50 to 200 nm using SiH ₄ and N ₂ O by a plasma CVD method. As another mode, a silicon oxynitride film formed of SiH ₄ , NH _3, and N ₂ O by plasma CVD is 50 nm, and SiH ₄ and N ₂ O are formed.
Or a two-layer structure in which a silicon oxynitride film made of 100 nm is laminated, or a silicon nitride film and TEOS (TeOS
It may have a two-layer structure in which silicon oxide films formed using traethyl ortho silicate are stacked.

Then, a second insulating film 305 is formed with a thickness of 80 nm. The second insulating film 305 is used as a gate insulating film, and is formed by a plasma CVD method or a sputtering method. As the second insulating film 305, SiH ₄
And a silicon oxynitride film formed by adding O ₂ to N ₂ O can reduce the fixed charge density in the film,
It is a preferable material for a gate insulating film. Needless to say, the gate insulating film is not limited to such a silicon oxynitride film, and an insulating film such as a silicon oxide film or a tantalum oxide film may be used as a single layer or a stacked structure.

Thereafter, as shown in FIG.
A first conductive film and a second conductive film for forming a gate electrode are formed over the insulating film 305. The first conductive film is formed using tantalum nitride, and the second conductive film is formed using tungsten. This conductive film is for forming a gate electrode, and has a thickness of 30 nm and 300 nm, respectively.

Thereafter, a resist pattern 308 for forming a gate electrode is formed by a light exposure process. A first etching process is performed using this resist pattern. There is no limitation on the etching method, but preferably ICP
(Inductively Coupled Plasma)
An etching method is used. Using CF ₄ and Cl ₂ as etching gases for tungsten and tantalum nitride, 0.5
２2 Pa, preferably 1 Pa, at a pressure of 50
The plasma is generated by supplying 0 W RF (13.56 MHz) power. At this time, 1 is also on the substrate side (sample stage).
By applying 00 W RF (13.56 MHz) power, a substantially negative self-bias voltage is applied. When CF ₄ and Cl ₂ are mixed, tungsten and tantalum nitride can be etched at substantially the same rate.

Under the above etching conditions, the end can be tapered due to the effect of the shape of the resist mask and the bias voltage applied to the substrate side. The angle of the tapered portion is set to 15 to 45 degrees. In order to perform etching without leaving a residue on the gate insulating film, the etching time may be increased by about 10 to 20%. Since the selectivity ratio of the silicon oxynitride film to the W film is 2 to 4 (typically 3), the surface where the second insulating layer is exposed by the over-etching process is 20 to 4
It is etched by about 0 nm. Thus, the first etching process is performed to form the first tantalum nitride and tungsten
Shaped electrodes 306, 307 can be formed.

Then, a first doping process is performed to dope the semiconductor film with an n-type impurity (donor). The method is not limited, but is preferably performed by an ion doping method or an ion implantation method. The condition of the ion doping method is that the dose is 1 × 10 ^{13 to} 5 × 10 ¹⁴ / cm ² . As the impurity element imparting n-type, an element belonging to Group 15 of the periodic table, typically, phosphorus (P) or arsenic (As) is used. in this case,
The first shape electrodes 306 and 307 serve as a mask for the element to be doped, and appropriately adjust the acceleration voltage (for example, 20).
-60 keV) to form first impurity regions 309 and 310 by the impurity element that has passed through the second insulating film. The concentration of phosphorus (P) in the first impurity regions 309 and 310 is 1 ×
The range is 10 ²⁰ to 1 × 10 ²¹ / cm ³ .

Subsequently, a second etching process is performed as shown in FIG. Etching is performed using an ICP etching method. CF ₄ , Cl _2, and O ₂ are mixed as an etching gas, and RF power (13.56 MHz) of 500 W is supplied to the coil-type electrode at a pressure of 1 Pa to generate plasma. . On the substrate side (sample stage), 50 W RF (13.56 MHz)
z) Power is applied, and a lower self-bias voltage is applied than in the first etching process. Under such conditions, the tungsten film is anisotropically etched so that the tantalum nitride film as the first conductive layer remains. Thus, the second shape electrodes 311, 312 made of tantalum nitride and tungsten are formed by the first etching process. Second
The portion of the insulating film that is not covered with tantalum nitride is etched to a thickness of about 10 to 30 nm by this etching treatment, and becomes thin.

The dose in the second doping process is smaller than that in the first doping process, and an n-type impurity (donor) is doped under a condition of a high acceleration voltage. For example, the acceleration voltage is set to 70 to 120 keV and 1 × 10 ¹³ / cm ²
The second impurity region is formed inside the first impurity region. The doping is performed by passing the exposed tantalum nitride and adding an impurity element to the semiconductor film thereunder. Thus, the second impurity regions 313 and 314 overlapping with the tantalum nitride are formed. This impurity region varies depending on the thickness of tantalum nitride, but its peak concentration is 1%.
It changes within the range of × 10 ¹⁷ to 1 × 10 ¹⁹ / cm ³ . The depth distribution of the n-type impurity in this region is not uniform but is formed with a certain distribution.

Then, as shown in FIG. 10D, a resist mask 315 is formed, and the semiconductor films 303 and 304 are formed.
Is doped with a p-type impurity (acceptor). Typically, boron (B) is used. The impurity concentration of the first p-type impurity added regions 316 and 317 is 2 × 10 ²⁰ to 2 × 10 ^21.
/ cm ^3, and boron is added in an amount of 1.5 to 3 times the contained phosphorus concentration to make the conductivity type p-type.

Thereafter, as shown in FIG. 11, a heat treatment for activating the added impurities is performed. In this heat treatment, the object to be processed is introduced into the reaction tube kept in a reduced pressure state by using the heat treatment apparatus described in the embodiment, and is activated by irradiation with pulsed light. The pulse light is emitted from one side or both sides of the substrate using the tungsten halogen lamp 319 as a light source. The heat treatment performed under reduced pressure and the state where the oxygen concentration is reduced to 10 ppm or less can be performed without oxidizing the surface of the gate electrode exposed at this stage.

By this heat treatment, the impurities are activated and the catalytic element used for crystallization is gettered from the region of the semiconductor film overlapping the second shape electrode, ie, the impurity region to which phosphorus and boron are added from the channel formation region. Can be ring. Here, hydrogen is simultaneously taken into the region to which boron is added at the time of ion doping, and the hydrogen is re-emitted by this heat treatment to temporarily generate a large amount of dangling bonds, which serve as gettering sites. It is thought to work.

Thereafter, as shown in FIG. 12, a protective insulating film 318 made of a silicon oxynitride film or a silicon nitride film is formed.
Is formed to a thickness of 50 nm by a plasma CVD method. Heat treatment at 410 ° C. using a clean oven causes hydrogen to be released from the protective insulating film 318, and hydrogenation of the semiconductor film can be performed to compensate for defects.

The interlayer insulating film 321 is formed of an organic insulating material such as polyimide or acrylic, and has a flat surface. Of course, silicon oxide formed using TEOS by a plasma CVD method may be used.

Next, a contact hole is formed from the surface of the interlayer insulating film 321 to reach the impurity region of each semiconductor film, and a wiring is formed using Al, Ti, Ta or the like. In FIG. 10D, reference numerals 322 to 323 are source lines or drain electrodes. Thus, an n-channel TFT and a p-channel TFT can be formed. Although each TFT is shown here as a single unit, these TFs
Using T, a CMOS circuit, an NMOS circuit, and a PMOS circuit can be formed.

[Embodiment 3] FIG. 13A shows that p-channel TFTs 403 and n are formed on the same substrate by the process of Embodiment 2.
A driving circuit 401 including a channel type TFT 404;
The configuration in which a pixel portion 402 including a channel type TFT 405 is formed is shown. Although the n-channel TFT 405 has a multi-gate structure, the manufacturing steps are performed in a similar manner. The pixel portion 402 has a capacitor electrode 4 formed in the same process as the semiconductor film 414, the second insulating film, and the gate electrode.
09 is formed. 412
Is a pixel electrode, and 410 is a connection electrode for connecting the data line 408 and the impurity region of the semiconductor film 413. Reference numeral 411 denotes a gate line, which is not shown in the figure but is connected to the third shape electrode 407 functioning as a gate electrode. The third shape electrode 407 is formed by etching the tantalum nitride of the second shape electrode.

The p-channel TFT 40 of the driving circuit 401
3. Various functional circuits such as a shift register, a level shifter, a latch, and a buffer circuit can be formed using the n-channel TFT 404. A shown in FIG.
The cross-sectional structure between -A 'corresponds to line AA' shown in the top view of the pixel shown in FIG. FIG.
The cross-sectional structure between BB 'shown in FIG. 14B corresponds to the line BB' shown in the top view of the pixel shown in FIG.

From such a substrate, a liquid crystal display device or a light emitting device in which a pixel portion is formed with light emitting elements can be formed. FIG. 15 is an external view of a substrate on which a driving circuit and a pixel portion are formed by TFTs. A pixel portion 506 and driving circuits 504 and 505 are formed over a substrate 501. An input terminal 502 is formed at one end of the substrate,
The wiring 503 connected to each drive circuit is routed.

To manufacture a liquid crystal display device, a counter substrate is attached with a gap using a sealing material, and liquid crystal is injected into the gap. In the light emitting device, an organic light emitting element is formed in a pixel portion. As described above, according to this embodiment, various semiconductor devices can be manufactured.

[Embodiment 4] As shown in Embodiment 1,
A method of adding a catalytic metal element to the entire surface of the amorphous semiconductor film to crystallize the amorphous semiconductor film can be performed using the heat treatment apparatus of the present invention. It is desirable to remove by ring.

FIG. 16 is a view for explaining one embodiment of the present invention, in which a gettering is performed after a metal element having a catalytic action is added to the entire surface of the amorphous semiconductor film for crystallization. In FIG. 16A, a substrate 601 can be formed using barium borosilicate glass, aluminoborosilicate glass, quartz, or the like. On the surface of the substrate 601, an inorganic insulating film as a blocking layer 602 is
It is formed with a thickness of 00 nm. The blocking layer 602 is provided so that the alkali metal contained in the glass substrate does not diffuse into a semiconductor film formed thereover. The blocking layer 602 can be omitted when quartz is used as the substrate.

The semiconductor film 603 having an amorphous structure formed on the blocking layer 602 uses a semiconductor material containing silicon as a main component. Typically, an amorphous silicon film or an amorphous silicon germanium film is applied,
It is formed to a thickness of 10 to 100 nm by a plasma CVD method, a low pressure CVD method, or a sputtering method. In order to obtain high-quality crystals, it is necessary to reduce the concentration of impurities such as oxygen, nitrogen, and carbon contained in the semiconductor film 603 having an amorphous structure as much as possible. It is desirable to use a CVD apparatus compatible with high vacuum.

After that, the semiconductor film 60 having an amorphous structure
To the surface of No. 3, a metal element having a catalytic action to promote crystallization is added. A nickel acetate salt solution containing 1 to 10 ppm of nickel by weight is applied with a spinner to form a catalyst-containing layer 6.
04 is formed. In this case, in order to improve the familiarity of the solution, as a surface treatment of the semiconductor film 603 having an amorphous structure, an extremely thin oxide film is formed using an aqueous solution containing ozone,
The oxide film is etched with a mixed solution of hydrofluoric acid and hydrogen peroxide to form a clean surface, and then treated again with an ozone-containing aqueous solution to form an extremely thin oxide film. Since the surface of a semiconductor film such as silicon is hydrophobic in nature, a nickel acetate solution can be uniformly applied by forming an oxide film in this manner.

Of course, the catalyst containing layer 604 is not limited to such a method, and may be formed by a sputtering method, a vapor deposition method, a plasma treatment, or the like.

Thereafter, the heat treatment apparatus of the present invention was used in the same manner as in Example 1 and pulsed light irradiation was performed under a reduced pressure of 13.3 to 1.33 × 10 ⁴ Pa to obtain the crystalline structure shown in FIG. The semiconductor film 605 can be formed.

In order to further increase the crystallization ratio (the ratio of the crystal component in the total volume of the film) and repair defects remaining in the crystal grains, the crystalline semiconductor film 605 may be irradiated with laser light. It is valid. 400 wavelength for laser
nm excimer laser light or the second YAG laser
Harmonics and third harmonics are used. In any case, pulse laser light having a repetition frequency of about 10 to 1000 Hz is used, and the laser light is applied to the optical system at 100 to 400 mJ / cm ^2.
And the laser treatment may be performed on the crystalline semiconductor film 605 with an overlap ratio of 90 to 95%.

In the crystalline semiconductor film 605 thus obtained, a metal element (here, nickel) remains. Although it is not uniformly distributed in the film, it remains at a concentration exceeding 1 × 10 ¹⁹ / cm ³ as an average concentration. Of course, even in such a state, various semiconductor elements including a TFT can be formed, but it is more preferable to remove the element by gettering.

FIG. 16B shows a gettering site 608.
Is shown in which a rare gas element or a rare gas element and an impurity element of one conductivity type are added to the crystalline semiconductor film 605 by an ion doping method. Crystalline semiconductor film 6
05, a silicon oxide film 606 for mask is
A rare gas element or a rare gas element and an impurity element of one conductivity type are added to a region which is formed to have a thickness of 00 to 200 nm, is provided with the opening 607, and exposes the crystalline semiconductor film. The concentration of the rare gas element in the crystalline semiconductor film is 1 × 10 ¹⁹ to
It is set to 1 × 10 ²¹ / cm ³ .

In this doping, a rare gas element is added after adding phosphine (PH ₃ ) or diborane (B ₂ H ₆ ) diluted with hydrogen to 1 to 10%, preferably 3 to 5%. Or 1 to 10% of a rare gas, preferably 3 to
Add PH ₃ or B ₂ H ₆ diluted to 5%. However, more preferably, only a rare gas element is added by an ion doping method to form a gettering site.

Helium (He), neon (Ne), argon (Ar), krypton (K
r) or one or more selected from xenon (Xe). Typically, argon is used. The present invention is characterized in that these inert gases are used as an ion source to form a gettering site and are injected into a semiconductor film by an ion doping method or an ion implantation method. There are two meanings to implant ions of these inert gases. One is to form a dangling bond by implantation to give a strain to the semiconductor film, and the other is to give a strain by implanting the ion between lattices of the semiconductor film. Implantation of inert gas ions can satisfy both of these at the same time, but the latter is particularly remarkable when using an element having a larger atomic radius than silicon, such as argon (Ar), krypton (Kr), or xenon (Xe). Can be

Gettering is performed at 450 to 8 in a nitrogen atmosphere.
When heat treatment is performed at 00 ° C. for 1 to 24 hours, for example, at 550 ° C. for 14 hours, a metal element can be segregated at the gettering site 608. Alternatively, using the heat treatment apparatus of the present invention in the same manner as in Example 1, 13.3 to 1.33 ×
Irradiation with pulsed light can be performed under a reduced pressure of 10 ⁴ Pa. In that case, in order to achieve the gettering effectively, the temperature of the semiconductor film heated by the pulsed light is set to a temperature at which the lattice is relaxed and the strain is not removed.

After that, when the gettering site is removed by etching, a crystalline semiconductor film 609 having a reduced concentration of the metal element is obtained as shown in FIG.
The crystalline silicon film 608 thus formed is made up of a collection of rod-like or needle-like crystals, each of which grows in a specific direction when viewed macroscopically. In particular, when a gettering site is formed using only a rare gas element, the TFT described in Embodiment 2 or 3 can be formed using the crystalline semiconductor film 609 as it is.

[Embodiment 5] A method of selectively forming an element which promotes crystallization of a semiconductor film will be described with reference to FIG. In FIG. 17A, when a glass substrate is used as the substrate 601, a blocking layer 602 is provided. Further, a semiconductor film 603 having an amorphous structure is formed in a manner similar to that of the first embodiment.

Then, the semiconductor film 60 having an amorphous structure
A silicon oxide film 6 having a thickness of 100 to 200 nm
Form 10. Although a method for forming the silicon oxide film is not limited, for example, tetraethyl orthosilicate (Tetraeth
yl Ortho Silicate (TEOS) and O ₂ are mixed, the reaction pressure is set to 40 Pa, the substrate temperature is set to 300 to 400 ° C., and discharge is performed at a high frequency (13.56 MHz) power density of 0.5 to 0.8 W / cm ² .

Next, the opening 61 is formed in the silicon oxide film 610.
1 is formed, and a nickel acetate salt solution containing 1 to 10 ppm of nickel by weight is applied. As a result, a catalyst metal-containing layer 612 is formed, which contacts the semiconductor film 603 only at the bottom of the opening 611.

Using the heat treatment apparatus of the present invention in the same manner as in Example 1, the crystalline semiconductor film 605 shown in FIG. 17B can be formed by irradiating pulse light at a reduced pressure of 1 to 200 Pa. In this case, in crystallization, silicide is formed in a portion of the semiconductor film in contact with a metal element serving as a catalyst, and crystallization proceeds in a direction parallel to the surface of the substrate using the nucleus as a nucleus. The crystalline silicon film 614 thus formed is made up of a collection of rod-like or needle-like crystals, each of which grows in a specific direction when viewed macroscopically.

Next, using the opening 611, the rare gas element alone or the rare gas element and one conductivity type impurity element are similarly added by ion doping to obtain the gettering site 6.
15 are formed. Gettering is 450 in nitrogen atmosphere.
When the heat treatment is performed at a temperature of 800 ° C. for 1 to 24 hours, for example, 550 ° C. for 14 hours, the metal element can be segregated at the gettering site 615. Alternatively, using the heat treatment apparatus of the present invention in the same manner as in Example 1, 13.3 to 1.3.
Irradiation with pulsed light can be performed under a reduced pressure of 3 × 10 ⁴ Pa. Also in this case, in order to achieve the gettering effectively, the temperature of the semiconductor film heated by the pulsed light is set to a temperature at which the lattice is relaxed and the strain is not removed.

After that, when the gettering sites are removed by etching, a crystalline semiconductor film 616 having a reduced concentration of the metal element is obtained as shown in FIG.
Using the crystalline semiconductor film 609 as it is, the TFT described in Embodiment 2 or 3 can be formed.

[Embodiment 6] Gettering using a rare gas element as described in Embodiment 4 or 5 is performed in the manufacturing process of the TFT shown in Embodiment 2 in order to form an impurity for forming source / drain regions. A similar effect can be obtained by adding a rare gas element to the region. That is, by performing heat treatment for activation performed to reduce the resistivity of the impurity region, the concentration of the metal element remaining in the channel formation region can be reduced.

[Embodiment 7] Various semiconductor devices can be manufactured by using the present invention. Such semiconductor devices include video cameras, digital cameras, goggle-type display devices (head-mounted displays), navigation systems, sound reproduction devices (car audio, audio components, etc.), notebook personal computers,
Examples include a game machine, a portable information terminal (a mobile computer, a mobile phone, a portable game machine, an electronic book, or the like), an image reproducing device provided with a recording medium, and the like. FIGS. 18 and 19 show specific examples of these semiconductor devices.

FIG. 18A shows a monitor of a desktop personal computer or the like.
It is composed of a support 3302, a display portion 3303, and the like.
According to the present invention, a monitor can be manufactured by forming the display portion 3303 and other integrated circuits.

FIG. 18B shows a video camera, which includes a main body 3311, a display section 3312, an audio input section 3313, operation switches 3314, a battery 3315, and an image receiving section 331.
6 and so on. According to the present invention, a video camera can be manufactured by forming the display portion 3312 and other integrated circuits.

FIG. 18C shows a part (one side on the right) of the head mounted display, which includes a main body 3321, a signal cable 3322, a head fixing band 3323, and a projection section 332.
4, including an optical system 3325, a display unit 3326, and the like. According to the present invention, a head mounted display can be manufactured by forming the display portion 3326 and other integrated circuits.

FIG. 18D shows an image reproducing apparatus (specifically, a DVD reproducing apparatus) provided with a recording medium.
1, recording medium (DVD, etc.) 3332, operation switch 33
33, a display section (a) 3334, a display section (b) 3335, and the like. The display unit (a) 3334 mainly displays image information, and the display unit (b) 3335 mainly displays character information.
4. An image reproducing device can be manufactured by forming the display portion (b) 3335 and other integrated circuits. Note that the image reproducing device provided with the recording medium includes a home game machine and the like.

FIG. 18E shows a goggle type display device (head mounted display), which includes a main body 3341, a display portion 3342, and an arm portion 3343. According to the present invention,
A goggle-type display device can be manufactured by forming the display portion 3342 and other integrated circuits.

FIG. 18F shows a notebook personal computer, which includes a main body 3351, a housing 3352, and a display portion 3.
353, a keyboard 3354, and the like. According to the present invention,
A notebook personal computer can be formed by forming the display portion 3353 and other integrated circuits.

FIG. 19A shows a portable telephone device, which includes a main body 3401, an audio output unit 3402, an audio input unit 3403,
A display portion 3404, an operation switch 3405, an antenna 34
06. According to the present invention, the display portion 3404 and other integrated circuits can be formed to form a mobile phone device.

FIG. 19B shows a sound reproducing device, specifically, a car audio.
2. Including operation switches 3413 and 3414. According to the present invention, a display portion 3412 can be formed to manufacture a sound reproducing device. In this embodiment, the in-vehicle audio is shown, but the present invention may be applied to a portable or home-use audio reproducing apparatus.

FIG. 19C shows a digital camera, which includes a main body 3501, a display section (A) 3502, an eyepiece section 3503,
An operation switch 3504, a display portion (B) 3505, and a battery 3506 are included. According to the present invention, the display unit (A) 35
A digital camera can be formed by forming the 02 display portion (B) 3505 and other integrated circuits.

As described above, the applicable range of the present invention is extremely wide, and can be applied to various electronic devices. Further, the electronic device of the present embodiment can be realized by using a configuration composed of any combination of the first to sixth embodiments.

[0103]

As described above, the heat treatment apparatus of the present invention performs heat treatment for the purpose of crystallization of an amorphous semiconductor film, activation of an impurity element added to a semiconductor film, and the like in a short time. be able to.

The lighting time of the light source for one time is 0.1.
By irradiating the light from the light source a plurality of times, for 1 to 60 seconds, preferably 0.1 to 20 seconds, and keeping the maximum temperature of the semiconductor substrate for 0.5 to 5 seconds, heat resistance is improved. Even when a glass substrate having low heat resistance is used, the heat treatment effect can be enhanced, and damage to a layer having low heat resistance formed on the semiconductor substrate can be prevented.

By performing the heat treatment under reduced pressure, the oxygen concentration in the atmosphere is reduced, the oxidation of the surface of the semiconductor film is suppressed, the activation of impurities is promoted, and the heat treatment with high reproducibility is performed. Can be.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a configuration of a heat treatment apparatus of the present invention.

FIG. 2 is a diagram illustrating a configuration of a heat treatment apparatus of the present invention.

FIG. 3 is a diagram illustrating a configuration of a heat treatment apparatus of the present invention.

FIG. 4 is a diagram illustrating a configuration of a heat treatment apparatus of the present invention.

FIG. 5 illustrates an example of a heating unit and a cooling unit.

FIG. 6 is a diagram illustrating blinking of a light source and a change in temperature of a semiconductor substrate.

FIG. 7 illustrates a method of preheating and heat treatment by irradiation with pulsed light.

FIG. 8 is a diagram illustrating an example of a control circuit which is suitable for blinking the light source in a pulsed manner using a halogen lamp or the like as a light source.

FIG. 9 is a diagram illustrating a heat treatment method for a semiconductor film by a heat treatment apparatus of the present invention.

FIG. 10 illustrates a manufacturing process of a semiconductor device.

FIG. 11 is a diagram illustrating a heat treatment method for a semiconductor film by a heat treatment apparatus of the present invention.

FIG. 12 illustrates a manufacturing process of a semiconductor device.

FIG. 13 illustrates a structure of a substrate in which a driver circuit and a pixel portion are formed over the same substrate.

FIG. 14 illustrates a structure of a pixel portion.

FIG. 15 illustrates an appearance of an element substrate of a display device.

FIG. 16 illustrates a method for manufacturing a crystalline semiconductor film of the present invention.

FIG. 17 illustrates a method for manufacturing a crystalline semiconductor film of the present invention.

FIG. 18 illustrates an example of a semiconductor device.

FIG. 19 illustrates an example of a semiconductor device.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) // H01L 21/306 H01L 21/26 J 21/306 DF Term (Reference) 4K030 AA01 AA06 AA13 BA29 BA35 CA04 CA12 JA11 KA24 KA25 KA26 5F043 BB27 GG10 5F052 AA02 AA11 AA24 CA10 DA02 DB03 EA16 FA06 FA19 FA22 HA01 JA01 5F110 AA16 BB02 CC02 DD02 DD03 DD13 DD14 DD15 DD17 EE01 EE04 EE14 EE23 GG01 FF01 GG01 FF28 HJ12 HJ13 HJ23 HL03 HL04 HM15 NN03 NN22 NN24 NN27 NN35 PP02 PP03 PP04 PP05 PP23 PP29 PP34 PP35 QQ04 QQ11 QQ19 QQ23 QQ28

Claims (28)

[Claims] 1. A reaction tube, gas supply means for supplying a gas into the reaction tube and heating or cooling the gas, a light source for heating an object to be processed installed in the reaction tube, and the light source Means for flashing in a pulse-like manner. 2. A reaction tube, gas supply means for supplying a gas into the reaction tube and heating or cooling the gas, a light source for heating an object to be processed installed in the reaction tube, and the light source Means for blinking in a pulsed manner, wherein the light source is provided outside the reaction tube, and the light source is blinked in a pulsed manner while supplying the gas heated by the gas supply means, thereby treating the object to be processed. A heat treatment apparatus having a function of heating. 3. A reaction tube, gas supply means for supplying a gas into the reaction tube and heating or cooling the gas, a light source for heating an object to be processed installed in the reaction tube, and the light source Means for blinking in a pulsed manner, wherein the light source is provided outside the reaction tube, and the light source is blinked in a pulsed manner while supplying the gas heated by the gas supply means, thereby treating the object to be processed. A heat treatment apparatus having a function of heating and then supplying a gas cooled to a room temperature or lower by the gas supply means to cool the object. 4. A reaction tube, gas supply means for supplying a gas into the reaction tube and heating or cooling the gas, a light source for heating an object to be processed installed in the reaction tube, and the light source Means for heating the object by flashing in a pulse shape at a cycle of 1 second or less, and second means for heating the object by flashing the light source in a pulse shape for a period of 1 second or more. A heat treatment apparatus comprising: 5. A reaction tube, exhaust means for depressurizing the inside of the reaction tube, gas supply means for supplying a gas into the reaction tube and heating or cooling the gas, and a processing object installed in the reaction tube. A heat treatment apparatus comprising: a light source for heating a body; and means for blinking the light source in a pulsed manner. 6. A reaction tube, exhaust means for depressurizing the inside of the reaction tube, gas supply means for supplying a gas into the reaction tube and heating or cooling the gas, and a processing object installed in the reaction tube. A light source for heating the body, and means for blinking the light source in a pulsed manner, wherein the light source is provided outside the reaction tube, and the gas supply means is provided in a state where the inside of the reaction tube is maintained at a reduced pressure. A heat treatment apparatus having a function of heating the object by blinking the light source in a pulsed manner while supplying the gas heated by the method. 7. A reaction tube, exhaust means for depressurizing the inside of the reaction tube, gas supply means for supplying a gas into the reaction tube and heating or cooling the gas, and a processing object installed in the reaction tube. A light source for heating the body, and means for blinking the light source in a pulsed manner, wherein the light source is provided outside the reaction tube, and the gas supply means is provided in a state where the inside of the reaction tube is maintained at a reduced pressure. Heating the object to be processed by flashing the light source in a pulsed manner while supplying the gas heated by the method, and then supplying the gas cooled to room temperature or lower by the gas supply means to supply the gas to be processed. A heat treatment apparatus having a function of cooling the heat treatment. 8. A reaction tube, exhaust means for depressurizing the inside of the reaction tube, gas supply means for supplying a gas into the reaction tube and heating or cooling the gas, and a processing target installed in the reaction tube. A light source for heating the body, a first means for heating the object by flashing the light source in a cycle of 1 second or less, and a light source for flashing the light source in a pulse shape for a period of 1 second or more. And a second means for heating the processing body. 9. The light source according to claim 1, wherein the light source is one selected from a halogen lamp, a metal halide lamp, a high-pressure mercury lamp, a high-pressure sodium lamp, and a xenon lamp. Heat treatment equipment. 10. The heat treatment apparatus according to claim 1, wherein the gas is one selected from nitrogen, helium, argon, krypton, and xenon. 11. Heating the object to be processed placed in the reaction tube by supplying a heated gas into the reaction tube and blinking a light source provided outside the reaction tube in a pulsed manner. A method for manufacturing a semiconductor device, comprising: 12. A heated gas is supplied into the reaction tube, and a light source provided outside the reaction tube is turned on and off in a pulsed manner to heat an object placed in the reaction tube. Thereafter, a gas cooled to room temperature or lower is supplied into the reaction tube to cool the object to be processed. 13. A first step in which a light source is provided outside the reaction tube, wherein the light source is turned on and off in a pulse shape at a cycle of 1 second or less to heat the object to be processed, and the light source is pulsed at a cycle of 1 second or more. Heating the object placed in the reaction tube by the second step of heating the object in a blinking manner. 14. A first light source, wherein a light source is provided outside the reaction tube, a heated gas is supplied into the reaction tube, and the light source is turned on and off in a pulsed manner at a cycle of 1 second or less to heat the object to be processed. Heating the object placed in the reaction tube by a step and a second step of heating the object by flashing the light source in a pulsed manner at a period of 1 second or more. Production method. 15. A heated gas is supplied into the reaction tube while the inside of the reaction tube is depressurized, and a light source provided outside the reaction tube is turned on and off in a pulsed manner, so that the object placed in the reaction tube is illuminated. A method for manufacturing a semiconductor device, comprising heating a processing body. 16. A heated gas is supplied into the reaction tube while the inside of the reaction tube is depressurized, and a light source provided on the outside of the reaction tube is turned on and off in a pulsed manner, and the object is placed in the reaction tube. A method for manufacturing a semiconductor device, comprising heating a processing object, and thereafter supplying a gas cooled to a room temperature or lower to the reaction tube to cool the processing object. 17. A first step in which a light source is provided outside the reaction tube, the inside of the reaction tube is maintained at a reduced pressure, and the light source is turned on and off in a pulse shape at a cycle of 1 second or less to heat the object to be processed.
Heating the object placed in the reaction tube by the second step of heating the object by blinking the light source in a pulsed manner at a cycle of 1 second or more. 18. A light source is provided outside the reaction tube. The inside of the reaction tube is maintained at a reduced pressure, a heated gas is supplied into the reaction tube, and the light source is turned on and off in a pulsed manner at a cycle of 1 second or less. Heating the object placed in the reaction tube by a first step of heating the object and a second step of heating the object by flashing the light source in a pulsed manner at a period of 1 second or more. A method for manufacturing a semiconductor device. 19. A light source according to claim 11, wherein said light source is one selected from a halogen lamp, a metal halide lamp, a high-pressure mercury lamp, a high-pressure sodium lamp, and a xenon lamp. A method for manufacturing a semiconductor device. 20. A semiconductor film having an impurity region of one conductivity type is placed in a reaction tube, a heated gas is supplied into the reaction tube, and a light source provided outside the reaction tube is pulsed. And heating the object placed in the reaction tube in a flashing manner. 21. A semiconductor film having an impurity region of one conductivity type is placed in a reaction tube, a heated gas is supplied into the reaction tube, and a light source provided outside the reaction tube is provided. Heating the object placed in the reaction tube by flashing in a pulsed manner, and thereafter supplying the gas cooled to room temperature or lower to the reaction tube to cool the object to be processed. Of manufacturing a semiconductor device. 22. A semiconductor film in which an impurity region of one conductivity type is formed is installed in a reaction tube, and a light source is provided outside the reaction tube. Heating the object placed in the reaction tube by a first step of heating the object and a second step of heating the object by pulsing the light source in a pulsed manner at a period of 1 second or longer. A method for manufacturing a semiconductor device, comprising: 23. A semiconductor film in which an impurity region of one conductivity type is formed is installed in a reaction tube, a light source is provided outside the reaction tube, and a heated gas is supplied into the reaction tube. A first step of heating the object by blinking in a pulse shape at a period of 1 second or less, and a second step of heating the object by blinking the light source in a pulse shape at a period of 1 second or more. A method for manufacturing a semiconductor device, comprising heating an object to be processed placed in a reaction tube. 24. A semiconductor film in which an impurity region of one conductivity type is formed is placed in a reaction tube, a heated gas is supplied into the reaction tube while the inside of the reaction tube is depressurized, and a gas is supplied to the outside of the reaction tube. A method for manufacturing a semiconductor device, characterized in that a light source provided is turned on and off in a pulse shape to heat an object placed in the reaction tube. 25. A semiconductor film in which an impurity region of one conductivity type is formed is placed in a reaction tube, a heated gas is supplied into the reaction tube while the inside of the reaction tube is depressurized, and the outside of the reaction tube is provided. A light source provided in the form of a pulse is flashed in a pulse shape to heat the object placed in the reaction tube, and thereafter, a gas cooled to room temperature or lower is supplied into the reaction tube so that the object is treated. A method for manufacturing a semiconductor device, comprising cooling. 26. A semiconductor film having an impurity region of one conductivity type formed therein is installed in a reaction tube, a light source is provided outside the reaction tube, the inside of the reaction tube is maintained at a reduced pressure, and the light source is cycled for one second. A first step of heating the object to be processed by blinking in a pulse shape in the following and a second step of heating the object to be processed by blinking the light source in a pulsed manner at a period of 1 second or more in the reaction tube. A method for manufacturing a semiconductor device, comprising heating an object to be processed. 27. A semiconductor film having an impurity region of one conductivity type formed therein is installed in a reaction tube, a light source is provided outside the reaction tube, the inside of the reaction tube is kept at a reduced pressure, and the inside of the reaction tube is heated. A first step of heating the object to be processed by supplying the gas, and blinking the light source in a pulsed manner at a cycle of 1 second or less;
Heating the object placed in the reaction tube by the second step of heating the object by blinking the light source in a pulsed manner at a cycle of 1 second or more. 28. The light source according to claim 20, wherein the light source is one selected from a halogen lamp, a metal halide lamp, a high-pressure mercury lamp, a high-pressure sodium lamp, and a xenon lamp. A method for manufacturing a semiconductor device.