JP4050902B2 - Method for manufacturing semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a heat treatment apparatus and a method for manufacturing a semiconductor device using the heat treatment apparatus. In particular, the present invention relates to a heat treatment apparatus for heating an object to be processed by radiation from a light source such as a lamp, and a method for manufacturing a semiconductor device using the heat treatment apparatus is applied to a semiconductor device using a semiconductor film having a crystal structure.
[0002]
[Prior art]
Heat treatment is an essential process for activating impurities added to the semiconductor and forming contacts between the semiconductor and the electrode. Among them, a hot wall type horizontal or vertical furnace annealing furnace is known as a typical heat treatment apparatus.
[0003]
However, monolithic integrated circuits manufactured using semiconductors are increasingly required to have extremely precise processing accuracy along with miniaturization. In particular, the formation of shallow junctions requires a heat treatment technique that minimizes the diffusion of impurities, and a method that requires a considerable amount of time for heating and cooling, such as a furnace annealing furnace, is not considered appropriate. Yes.
[0004]
In contrast, rapid thermal annealing (hereinafter referred to as RTA) has been developed as a heat treatment technology that performs rapid heating and rapid cooling, and heat is applied instantaneously between several tens of seconds to several microseconds. Have been developed. RTA is known as a method in which a substrate is rapidly heated mainly using an infrared lamp and heat treatment is performed in a short time.
[0005]
By the way, not only the integrated circuit is manufactured using a semiconductor substrate such as a silicon wafer, but also a method using a thin film transistor (hereinafter referred to as TFT) formed on a substrate such as glass or quartz has been developed. Although there are differences in the structure and manufacturing method of a TFT, in any case, a semiconductor film having a crystalline structure (hereinafter referred to as a crystalline semiconductor film) rather than forming an active layer that forms a channel from an amorphous semiconductor film. It is possible to obtain better electrical characteristics by forming the layer.
[0006]
If a quartz substrate is used, it can withstand heat treatment at 900 ° C., and a manufacturing technique based on a semiconductor substrate can be applied. On the other hand, when the size of the substrate is increased as in a liquid crystal display device, it is a precondition to use an inexpensive glass substrate in order to reduce costs. Glass substrates that are commercially available or mass-produced for electronic devices such as liquid crystal display devices use aluminoborosilicate glass or barium borosilicate glass with a reduced concentration of the alkali element contained. Such glass substrates Since the heat-resistant temperature is about 650 ° C. at most, the upper limit of the heat treatment temperature is inevitably determined in the vicinity thereof.
[0007]
For example, an amorphous silicon film requires a heat treatment temperature of 600 ° C. or more for several hours to several tens of hours for crystallization. In order to perform crystallization in a shorter time, the temperature needs to be higher. However, increasing the heat treatment temperature exceeding the strain point causes irreversible deformation of the glass substrate and is not a practical method. For this purpose, the laser annealing method employed is to crystallize by irradiating a laser beam with high energy density collected by an optical system. Typically, a pulsed excimer laser is used, and while the irradiation time of the laser beam is several tens of nanoseconds, the semiconductor film is melted and crystallized through a liquid phase state.
[0008]
Of course, crystallization of an amorphous semiconductor film is also attempted by the RTA method, but it takes a longer heating time than the laser annealing method. From the viewpoint of heating temperature, since crystallization by the RTA method is solid phase growth, not only high quality crystals can be obtained, but also the temperature of the substrate is considerably increased compared to the laser annealing method. It is necessary to use a quartz substrate with In a glass substrate, it has been confirmed that heating of the lamp light irradiated for crystallization for several tens of seconds raises the temperature of the substrate and causes distortion and deformation.
[0009]
[Problems to be solved by the invention]
Crystallization by heat treatment of the semiconductor film and activation of the added impurity, even if there is an optimum temperature range for the conditions, the reaction proceeds faster as the temperature is higher, and the heat treatment is shorter. Even when the RTA method is used, when using a glass substrate with low heat resistance, it is not possible to apply processing conditions in which the glass substrate is heated above the heat resistance temperature. It is necessary to lengthen the processing time. However, since RTA is premised on single-wafer processing, an increase in heat treatment time causes a decrease in throughput.
[0010]
The RTA method can be heated to a high temperature in a short time, and even a single wafer type has a potentially higher processing capacity than the furnace annealing method. However, in the conventional RTA method, it is necessary to increase the heating temperature instead of shortening the heating time, and in order to obtain a desired effect in the activation or gettering treatment, the glass is heated to a strain point or higher than the softening point. There is a need. For example, the glass substrate is bent and deformed by its own weight only by performing a heat treatment at 800 ° C. for 60 seconds for the gettering process.
[0011]
Of course, the use of a furnace annealing furnace for batch processing is also considered, but as the substrate to be processed increases in size, the apparatus also increases in size, which not only increases the installation area but also consumes to heat the large-capacity furnace uniformly. The problem is that the power increases.
[0012]
An object of the present invention is to solve the above problems, and in a manufacturing process of a semiconductor device using a substrate having low heat resistance such as glass, impurities added to the semiconductor film by a short heat treatment without deforming the substrate It is an object of the present invention to provide a method for element activation and semiconductor film gettering and a heat treatment apparatus capable of such heat treatment.
[0013]
[Means for Solving the Problems]
The configuration of the heat treatment apparatus of the present invention for solving the above problems includes a reaction tube, a means for introducing a gas for heating or cooling an object to be processed installed in the reaction tube, and a process to be installed in the reaction tube. A light source for heating the body, and means for blinking the light source in pulses. In another configuration, a reaction tube, a means for introducing a gas heated in a reaction tube, or a gas cooled to room temperature or lower, and a reaction tube are disposed in the reaction tube. A light source for heating the object to be processed and means for blinking the light source in pulses. In addition to such a configuration, an exhaust means for reducing the pressure in the reaction tube may be provided.
[0014]
In addition, heating of the object to be processed by the light source is a first means for heating the object to be processed by blinking in a pulse form with a cycle of 1 second or less, and heating the object to be processed by blinking in a pulse form with a period of 1 second or more. Second means. This is done by changing the configuration of the power supply circuit that turns on the light source, although the light source is common.
[0015]
As the light source, a halogen lamp, a metal halide lamp, a high-pressure mercury lamp, a high-pressure sodium lamp, a xenon lamp, or the like is employed. In any case, a lamp including a wavelength band that is absorbed by the object to be processed is used. For example, a halogen lamp or a metal halide lamp that emits light in a wavelength band of 0.5 to 1.5 μm is suitable for a silicon film.
[0016]
In addition, the gas introduced into the reaction tube uses an inert gas such as nitrogen, helium, argon, krypton, or xenon to prevent reaction with the object to be processed.
[0017]
In addition, in the method for manufacturing a semiconductor device of the present invention using the heat treatment apparatus having such a configuration, a heated gas is supplied into the reaction tube, and a light source provided outside the reaction tube is blinked in a pulse shape. The object to be processed placed in the reaction tube is heated. Further, after the heating is completed, the throughput can be improved by supplying a gas cooled to room temperature or lower into the reaction tube and cooling the object to be processed. In addition, a similar manufacturing method can be applied while maintaining the inside of the reaction tube at a reduced pressure. In the present invention, the term “semiconductor device” refers to all devices that can function using semiconductor characteristics.
[0018]
In addition to heating the object to be processed with the heated inert gas, the method for heat-treating the object to be processed includes a first stage of heating the object to be processed by blinking the light source in a pulsed manner with a period of 1 second or less; A method of performing the second step of heating the object to be processed by blinking the light source in a pulse shape with a period of 1 second or more is also employed. This first stage is performed for preheating the object to be processed to a predetermined temperature, and the second heat treatment is for performing a desired heat treatment such as crystallization, activation, gettering and the like.
[0019]
The object to be processed is a semiconductor film or the like formed on a substrate such as glass or quartz, and an impurity region to which an impurity of one conductivity type is added may be formed in the semiconductor film. A gate insulating film, a gate electrode, or the like may be formed.
[0020]
As shown in FIG. 6, the heat treatment using the heat treatment apparatus of the present invention is roughly divided into three stages: preheating, heat treatment, and cooling treatment. In the preheating, the object to be processed is heated with an inert gas heated by a heating means. The heating temperature is set to about 300 to 500 ° C., and the light source is turned on in a pulse shape while the temperature is maintained, and heat treatment is performed. The light emission time per light source is 0.1 to 60 seconds, preferably 0.1 to 20 seconds, and the light from the light source is irradiated a plurality of times. Alternatively, the light from the light source is irradiated in pulses so that the maximum temperature holding time of the semiconductor film is 0.5 to 5 seconds. Thereafter, in the cooling process, the object to be processed is cooled to 200 ° C. or less with an inert gas cooled to a room temperature or a temperature below the room temperature supplied via the cooling means.
[0021]
The preheating may be performed not only by the heated inert gas, but also by flashing the light source at a cycle of 1 second or less and irradiating the pulsed light a plurality of times as shown in FIG. For the blinking, a pulse forming network circuit is used to efficiently supply a large pulsed current to the light source. Of course, preliminary heating may be performed by combining such heating with pulsed light and heating with a heated inert gas.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The configuration of the heat treatment apparatus of the present invention will be described with reference to FIG. The heat treatment apparatus shown in FIG. 1 includes a load chamber 102, an unload chamber 103, a preheating chamber 104, a heat treatment chamber 105, and a laser processing chamber 106 around a transfer chamber 101 having a transfer means 108 for moving the substrate. It has a configuration. These rooms can be kept under reduced pressure by the exhaust means 111. Further, it is connected to the transfer chamber 101 through gates 107a to 107e.
[0023]
The heat treatment chamber 105 is provided with a light source 118 and is turned on by a power supply unit 119. Further, a turbo molecular pump 109 and a dry pump 110 are provided as exhaust means 111 for reducing the pressure inside the heat treatment chamber 105. Of course, other vacuum pumps can be used for the exhaust means 111.
[0024]
As a gas introduced into the heat treatment chamber 105, an inert gas such as nitrogen, helium, argon, krypton, or neon is used. In any case, it is desirable that the medium has a low absorption rate with respect to the radiant heat of the light source 118. This gas is supplied from the cylinder 116b. As a means for supplying such gas, a gas heating means 112b and a cooling means 113b are provided before being introduced into the heat treatment chamber 105. This is for heating or cooling an object to be processed installed in the heat treatment chamber 105, and the gas is introduced into the heat treatment chamber 105 through either one of the paths. The gas supplied to the heat treatment chamber 105 is circulated by the circulator 115b to cool the substrate. In this case, it is desirable to provide the purifier 114b in the middle in order to maintain the purity of the gas. The purifier 114b may use a getter material or a cold trap made of liquid nitrogen.
[0025]
The light source 118 is turned on in pulses by the power supply unit 119. The turning on and off of the light source 118 and the flow rate of the gas flowing into the heat treatment chamber 105 are changed in conjunction with each other. The object to be processed is rapidly heated by turning on the light source 118. During the temperature raising period, heating is performed to a set temperature (for example, 1150 ° C.) at a temperature raising rate of 100 to 200 ° C./second. The set temperature is a temperature detected by temperature detecting means placed near the substrate to be processed. A thermopile, a thermocouple, or the like is used as the temperature detection means.
[0026]
For example, if heating is performed at a temperature rising rate of 150 ° C./second, heating can be performed to 1100 ° C. in less than 7 seconds. Thereafter, the temperature is maintained at a set temperature for a certain time, and the light source is turned off. The holding time is 0.5 to 5 seconds. Therefore, the continuous lighting time of the light source is 0.1 seconds or more and does not exceed 90 seconds.
[0027]
As the light source, a halogen lamp, a metal halide lamp, a high-pressure mercury lamp, a high-pressure sodium lamp, a xenon lamp, or the like can be used. The light source 118 is turned on in a first stage in which the object to be processed flashes in a pulsed manner with a cycle of 1 second or less, and in a second stage in which the object to be processed flashes in a pulsed form with a period of 1 second or longer. It is divided into and. The first stage is performed for preheating the object to be processed, and heating is performed up to about 200 to 400 ° C. The second stage is heating for heat treatment, and the substrate is heated to a desired temperature by extending the lighting time of the light source 118.
[0028]
The pulsed lighting of the light source 118 is performed in order to selectively heat a predetermined region of the object to be processed. For example, when there is a semiconductor film on a glass substrate as an object to be processed, if a halogen lamp having a strong spectral distribution in the infrared region is used, the semiconductor film is substantially heated to 600 ° C. or more without deforming the glass substrate. be able to.
[0029]
FIG. 8 shows an example of a circuit that enables pulsed discharge in a short cycle, as in the first stage of heating the object to be processed by blinking in a cycle of 1 second or less. The circuit of FIG. 8A is a pulse forming network circuit, and a pulse waveform is obtained by adding a damping oscillation having a period three times that of L2, C2, and R to the critical braking discharge caused by L1, C1, and R. Is a square wave. With such a discharge circuit, an output of about 10 MA is possible with a pulse width of 10 nanoseconds to 100 milliseconds. The duration of discharge can be varied depending on the values of L and C and the number of connected stages. The output is supplied to the light sources H1 to Hn as shown in FIG. On the other hand, the second stage of heating the object to be processed by blinking in a pulse shape with a period of 1 second or longer is performed by using a battery or a flywheel generator.
[0030]
In the heat treatment, the object to be treated is placed in the heat treatment chamber 105 held under a reduced pressure of 13.3 Pa or less by the exhaust means 111, and the gas heated by the heating means 112b is introduced as the first stage, and 13.3 is obtained. ~ 1.33 × 10 ^Four Keep at Pa. The object to be processed is 200 to 400 depending on the introduced gas. ℃ Heated to a degree. This gas may be circulated through the path of the purifier 114b, the circulator 115b, and the heating means 112b. As the first stage, heating that causes the light source 118 to blink at short intervals of 1 second or less may be applied. Thereafter, as a second stage, heat treatment is performed by irradiating the light source 118 with pulsed light having a lighting time of 1 to 60 seconds a plurality of times. After the predetermined heat treatment is finished, the gas inflow path is changed and introduced through the cooling means 113b. This is performed in order to cool a to-be-processed object, and the temperature of the gas cooled shall be room temperature-about liquid nitrogen temperature.
[0031]
As described above, the heat treatment apparatus of the present invention is characterized by using a gas heated to a temperature higher than room temperature or cooled to a temperature lower than room temperature in order to shorten the time required for heating and cooling the object to be processed. Yes. Moreover, heat insulation is improved and thermal efficiency is improved by carrying out under reduced pressure. By shortening the actual heating time and irradiating light selectively absorbed by the semiconductor film from the light source, it is possible to selectively heat only the semiconductor film without heating the substrate itself so much. Become.
[0032]
The preheating chamber 104 more actively heats and cools the object to be treated. The inert gas supplied from the cylinder 116a is heated or cooled by the heating means 112a or the cooling means 113a and sprayed on the object to be treated. It has a configuration. Similarly, the preheating chamber 104 is maintained at a reduced pressure by the exhaust means 111, and the introduced gas can be circulated by the purifier 114a and the circulator 115a.
[0033]
The attached laser processing chamber 106 is a processing chamber for performing heat treatment of the object to be processed by laser light, and includes a laser oscillator 121 and an optical system 122 for irradiating the object to be processed with a predetermined energy density. It has been.
[0034]
FIG. 2 is a diagram for explaining the details of the heat treatment chamber 105. The heat treatment chamber 105 has a reaction tube 160 made of quartz, and a light source 118 is provided outside thereof. An object to be processed is installed in the reaction tube 160, but the substrate to be processed is placed on the pins in order to make the temperature distribution uniform. The decompression means 111 is preferably a turbo molecular pump 109 and a dry pump 11. 0 It is used to evacuate the gas in the reaction tube and keep it at a reduced pressure. The temperature heated by the light source 118 is measured by the temperature detection means 124 using a thermocouple. A sensor 125 such as a thermopile is provided in the reaction tube 160 to indirectly monitor the heating temperature of the object to be processed.
[0035]
Even in the heat treatment under reduced pressure, it is possible to heat efficiently by using a wavelength band in which radiation from the light source is absorbed by the object to be processed. The heat treatment under reduced pressure reduces the oxygen concentration and can suppress oxidation of the object to be processed.
[0036]
The light source 118 is turned on and off by the power supply unit 119. The computer 120 centrally controls the operation of the power supply unit 119, the gas heating means 112b, the cooling means 113b, the purifier 114b, and the circulator 115b.
[0037]
The reaction tube 160 has a double structure, and an object to be processed is installed inside the inner tube 161. The inert gas supplied via the heating means 112b or the cooling means 113b is supplied between the reaction tube (outer tube) 160 and the inner tube 161, and the inside of the inner tube 161 from the pores provided in the inner tube 161. To be supplied.
[0038]
FIG. 3 shows another configuration example in the heat treatment chamber 105, and shows a configuration in which a radiator 162 is used as means for heating and cooling the inert gas supplied into the reaction tube 160 and directly connected to the reaction tube 160. The radiator 162 is connected to the heat exchanger 126 for heating or cooling. Other configurations are the same as those in FIG.
[0039]
FIG. 4 shows the configuration of the preheating chamber 104, and the inert gas supplied from the cylinder 116 a through the heating unit 112 a or the cooling unit 113 a is supplied into the preheating chamber 104 through the porous material 107. A shower plate or the like provided with a large number of pores may be used. However, in order to spray an inert gas uniformly on the substrate 100, it is preferable to use a porous material formed of ceramic or the like. Other configurations of the exhaust means 111 and the like follow the description of FIG.
[0040]
An example of the structure of the heating means and cooling means of the inert gas suitable for the heat treatment apparatus of the present invention is shown in FIG. FIG. 5A shows an example of a heating means, in which a fin 152 made of high-purity titanium or tungsten is provided inside a cylinder 150 through which gas passes. The cylinder 150 is formed of translucent quartz or the like, and heats the fins 152 by the radiation of the light source 150 provided outside thereof. The gas is heated in contact with the fins 152, but by providing a heat source outside the cylinder 150, contamination is prevented and the purity of the gas to be passed can be maintained.
[0041]
FIG. 5B shows an example of a cooling means, in which a fin 154 formed of high-purity titanium or tungsten is provided in a cylinder 153 through which gas passes, and is connected to a heat exchanger 155 by a heat pipe. The gas contacts the fins 154 cooling Is done.
[0042]
As described above, by using the present invention, even when a substrate having low heat resistance such as glass is used, a method for activating an impurity element added to a semiconductor film or performing a gettering process on the semiconductor film by a short heat treatment And such heat treatment may be possible. Such heat treatment can be incorporated into the manufacturing process of the semiconductor device. The structure of the heat treatment apparatus shown in the present embodiment is an example, and is not limited to the structure shown here. The heat treatment apparatus of the present invention is characterized by a means for cooling the substrate to be processed and a structure in which the semiconductor film is heated by irradiating light from a light source in a pulsed manner. The configuration is not particularly limited.
[0043]
Needless to say, the heat treatment apparatus of the present invention can be used for a heat treatment process of an integrated circuit using a semiconductor substrate as well as a TFT.
[0044]
【Example】
[Example 1]
An embodiment of crystallizing an amorphous semiconductor film using the heat treatment apparatus of the present invention will be described with reference to FIG.
[0045]
In FIG. 9, a substrate 201 is a light-transmitting substrate made of aluminoborosilicate glass or barium borosilicate glass. A thickness of 0.3 to 1.1 mm is used. An amorphous silicon film 203 is formed on the substrate 201 by a plasma CVD method. In addition, a blocking layer is provided so that an impurity element is not mixed from the substrate 201 into the amorphous silicon film 203 by heat treatment or the like. 202 Form. Normally, it is formed by using an insulating film containing silicon as a component. _Four , N ₂ O, NH _Three A first silicon oxynitride film formed by plasma CVD method from 50 nm, SiH _Four , N ₂ A second silicon oxynitride film manufactured from O by plasma CVD is formed to a thickness of 100 nm, and these are stacked to form the blocking layer 202.
[0046]
A metal element that can lower the heating temperature necessary for crystallization of silicon is added over the amorphous silicon film 203. Such catalytic metal elements include iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir). Platinum (Pt), copper (Cu), gold (Au), etc., and one or more selected from these can be used.
[0047]
The nickel-containing layer 204 is formed by applying a nickel acetate salt solution containing 0.1 to 100 ppm, preferably 1 to 5 ppm of nickel in terms of weight with a spinner. In this case, in order to improve the familiarity of the solution, as the surface treatment of the amorphous silicon film 203, an extremely thin oxide film is formed with an aqueous solution containing ozone, and the oxide film is mixed with hydrofluoric acid and hydrogen peroxide solution. After etching to form a clean surface, it is preferable to form a very thin oxide film by treating with an ozone-containing aqueous solution again. Since the surface of silicon is inherently hydrophobic, the nickel acetate salt solution can be uniformly applied by forming an oxide film in this way.
[0048]
The object to be processed in such a form is placed in the reaction tube 206 that has been previously maintained at a reduced pressure of 13.3 Pa or less. Then, preheating is performed by introducing an inert gas heated to 250 ° C. by a heating means. The preheating time is arbitrary, but as an example, it is held in that state for 5 minutes. Alternatively, when preheating is performed in a preheating chamber provided elsewhere, preheating can be performed for one minute.
[0049]
Thereafter, the lighting time is set to 40 seconds, the lighting interval is set to 30 seconds, the light source is blinked, and the heat treatment is performed by repeating irradiation with such pulsed light a plurality of times (typically 2 to 10 times). Although the temperature of the semiconductor film that is instantaneously heated by the pulsed light is not directly measured, the radiation intensity is adjusted to 1250 ° C. as a measurement value of a temperature sensor using a thermocouple. By this heat treatment, the amorphous silicon film can be crystallized. Thereafter, the introduction path of the inert gas is switched, and cooling is performed with the inert gas cooled to room temperature or lower by the cooling means.
[0050]
In addition, about 10 to 30 atomic% of hydrogen remains in the amorphous silicon film produced by the plasma CVD method, and crystallization is usually performed after the hydrogen is desorbed by heating. . As a heat treatment for that purpose, dehydrogenation treatment may be performed by heating the semiconductor film to about 500 ° C. by irradiating pulsed light having a lighting time of about 0.1 seconds a plurality of times. This dehydrogenation treatment can be further promoted by performing it under reduced pressure.
[0051]
In this way, the amorphous silicon film can be crystallized substantially with a heating time of several seconds to several seconds to several minutes, and even if a glass substrate having a strain point of 660 ° C. is used, it is crystallized without distorting the substrate. It can be performed.
[0052]
[Example 2]
A method for manufacturing a TFT using the crystalline semiconductor film thus manufactured will be described with reference to FIGS.
[0053]
First, in FIG. 10A, crystalline semiconductor films 303 and 304 separated into island shapes are formed over a light-transmitting substrate 301 made of aluminoborosilicate glass or barium borosilicate glass. Further, between the substrate 301 and the semiconductor film, a first insulating film 302 formed by combining one or more selected from silicon nitride, silicon oxide, and silicon nitride oxide is formed with a thickness of 50 to 200 nm.
[0054]
As an example of the first insulating film 302, SiH is formed by plasma CVD. _Four And N ₂ A silicon oxynitride film is formed to a thickness of 50 to 200 nm using O. As another form, SiH is formed by plasma CVD. _Four And NH _Three And N ₂ A silicon oxynitride film made of O is 50 nm, SiH _Four And N ₂ A two-layer structure in which a silicon oxynitride film manufactured from O is stacked to a thickness of 100 nm, or a two-layer structure in which a silicon nitride film and a silicon oxide film manufactured using TEOS (Tetraethyl Ortho Silicate) are stacked may be used. .
[0055]
Then, the second insulating film 305 is formed with a thickness of 80 nm. The second insulating film 305 is used as a gate insulating film and is formed using a plasma CVD method or a sputtering method. As the second insulating film 305, SiH _Four And N ₂ O to O ₂ A silicon oxynitride film formed by adding Si can reduce a fixed charge density in the film and is a preferable material for a gate insulating film. Needless to say, the gate insulating film is not limited to such a silicon oxynitride film, and an insulating film such as a silicon oxide film or a tantalum oxide film may be used as a single layer or a stacked structure.
[0056]
After that, as shown in FIG. 10B, a first conductive film and a second conductive film for forming a gate electrode are formed over the second insulating film 305. The first conductive film is formed using tantalum nitride, and the second conductive film is formed using tungsten. This conductive film is for forming a gate electrode, and the thicknesses thereof are 30 nm and 300 nm, respectively.
[0057]
Thereafter, a resist pattern 308 for forming a gate electrode is formed by a light exposure process. A first etching process is performed using this resist pattern. Although there is no limitation on the etching method, an ICP (Inductively Coupled Plasma) etching method is preferably used. CF as an etching gas for tungsten and tantalum nitride _Four And Cl ₂ The plasma is generated by applying 500 W of RF (13.56 MHz) power to the coil-type electrode at a pressure of 0.5 to 2 Pa, preferably 1 Pa. At this time, 100 W of RF (13.56 MHz) power is also applied to the substrate side (sample stage) to apply a substantially negative self-bias voltage. CF _Four And Cl ₂ When tungsten is mixed, tungsten and tantalum nitride can be etched at the same rate.
[0058]
Under the above etching conditions, the end portion can be tapered by the shape of the resist mask and the effect of the bias voltage applied to the substrate side. The angle of the tapered portion is set to 15 to 45 degrees. In order to etch without leaving a residue on the gate insulating film, it is preferable to increase the etching time at a rate of about 10 to 20%. Since the selection ratio of the silicon oxynitride film to the W film is 2 to 4 (typically 3), the surface where the second insulating layer is exposed by the over-etching process is etched by about 20 to 40 nm. Thus, the first shape electrodes 306 and 307 made of tantalum nitride and tungsten can be formed by the first etching process.
[0059]
Then, a first doping process is performed to dope the semiconductor film with an n-type impurity (donor). The method is not limited, but is preferably performed by an ion doping method or an ion implantation method. The condition of the ion doping method is a dose of 1 × 10 ¹³ ~ 5x10 ¹⁴ /cm ² Do as. As the impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As) is used. In this case, the first shape electrodes 306 and 307 serve as a mask for the element to be doped, and the acceleration voltage is appropriately adjusted (for example, 20 to 60 keV). 309 and 310 are formed. The phosphorus (P) concentration in the first impurity regions 309 and 310 is 1 × 10 ²⁰ ~ 1x10 ^{twenty one} /cm ^Three To be in the range.
[0060]
Subsequently, a second etching process is performed as shown in FIG. The ICP etching method is used for etching, and CF is used as an etching gas. _Four And Cl ₂ And O ₂ And 500 W of RF power (13.56 MHz) is supplied to the coil-type electrode at a pressure of 1 Pa to generate plasma. 50 W RF (13.56 MHz) power is applied to the substrate side (sample stage), and a lower self-bias voltage is applied than in the first etching process. Under such conditions, the tungsten film is anisotropically etched to leave the tantalum nitride film as the first conductive layer. Thus, the second shape electrodes 311 and 312 made of tantalum nitride and tungsten are formed by the first etching process. The portion of the second insulating film not covered with tantalum nitride is etched and thinned by about 10 to 30 nm by this etching process.
[0061]
The dose amount in the second doping process is smaller than that in the first doping process, and the n-type impurity (donor) is doped under the condition of a high acceleration voltage. For example, the acceleration voltage is 70 to 120 keV and 1 × 10 ¹³ /cm ² The second impurity region is formed on the inner side of the first impurity region. Doping allows exposed tantalum nitride to pass through and adds an impurity element to the underlying semiconductor film. Thus, second impurity regions 313 and 314 overlapping with tantalum nitride are formed. This impurity region varies depending on the film thickness of tantalum nitride, but its peak concentration is 1 × 10 6. ¹⁷ ~ 1x10 ¹⁹ /cm ^Three It varies in the range. The depth distribution of the n-type impurity in this region is not uniform and is formed with a certain distribution.
[0062]
Then, a resist mask 315 is formed as shown in FIG. 10D, and the semiconductor films 303 and 304 are doped with p-type impurities (acceptors). Typically, boron (B) is used. The impurity concentration of the first p-type impurity added regions 316 and 317 is 2 × 10. ²⁰ ~ 2x10 ^{twenty one} /cm ^Three Then, boron having a concentration of 1.5 to 3 times the concentration of phosphorus contained is added to make the conductivity type p-type.
[0063]
Thereafter, as shown in FIG. 11, heat treatment for activating the added impurities is performed. For this heat treatment, a heat treatment apparatus described in the embodiment is used, and an object to be treated is introduced into a reaction tube held in a reduced pressure state and activated by irradiation with pulsed light. Pulse light is irradiated from one or both sides of the substrate using a tungsten halogen lamp 319 as a light source. The heat treatment performed under reduced pressure and with the oxygen concentration reduced to 10 ppm or less can be performed without oxidizing the surface of the gate electrode exposed at this stage.
[0064]
Impurities are activated by this heat treatment, and the catalyst element used for crystallization from the region of the semiconductor film overlapping the second shape electrode, that is, the channel formation region, is gettered to the impurity region to which phosphorus and boron are added. Can do. Here, hydrogen is simultaneously taken into the boron-added region at the time of ion doping, and a large amount of dangling bonds are temporarily generated when the hydrogen is re-released by this heat treatment, which serves as a gettering site. It is thought to work.
[0065]
Thereafter, as shown in FIG. 12, a protective insulating film 318 made of a silicon oxynitride film or a silicon nitride film is formed to a thickness of 50 nm by plasma CVD. Heat treatment at 410 ° C. using a clean oven results in hydrogen release from the protective insulating film 318, and the semiconductor film can be hydrogenated to compensate for defects.
[0066]
The interlayer insulating film 321 is formed of an organic insulating material such as polyimide or acrylic to flatten the surface. Of course, silicon oxide formed using TEOS by a plasma CVD method may be applied.
[0067]
Next, contact holes reaching the impurity regions of the respective semiconductor films from the surface of the interlayer insulating film 321 are formed, and wirings are formed using Al, Ti, Ta, or the like. In FIG. 10D, reference numerals 322 to 323 denote source lines or drain electrodes. Thus, an n-channel TFT and a p-channel TFT can be formed. Although each TFT is shown here as a single unit, a CMOS circuit, NMOS circuit, or PMOS circuit can be formed using these TFTs.
[0068]
[Example 3]
FIG. 13A shows a structure in which a driver circuit 401 including a p-channel TFT 403 and an n-channel TFT 404 and a pixel portion 402 including an n-channel TFT 405 are formed on the same substrate by the process of Embodiment 2. ing. Although the n-channel TFT 405 has a multi-gate structure, the manufacturing process is performed in the same manner. In the pixel portion 402, a storage capacitor 406 including a capacitor electrode 409 formed in the same process as the semiconductor film 414, the second insulating film, and the gate electrode is formed. Reference numeral 412 denotes a pixel electrode, and reference numeral 410 denotes a connection electrode that connects the data line 408 and the impurity region of the semiconductor film 413. Reference numeral 411 denotes a gate line, which is not shown in the drawing, but is connected to a third shape electrode 407 that functions as a gate electrode. The third shape electrode 407 is formed by etching tantalum nitride of the second shape electrode.
[0069]
Various functional circuits such as a shift register, a level shifter, a latch, and a buffer circuit can be formed using the p-channel TFT 403 and the n-channel TFT 404 of the driver circuit 401. The cross-sectional structure between AA ′ shown in FIG. 13A corresponds to the AA ′ line shown in the top view of the pixel shown in FIG. 13B corresponds to the line BB ′ shown in the top view of the pixel shown in FIG.
[0070]
From such a substrate, a liquid crystal display device or a light-emitting device in which a pixel portion is formed using a light-emitting element can be formed. FIG. 15 is an external view of a substrate on which a driving circuit and a pixel portion are formed by TFTs. A pixel portion 506 and driving circuits 504 and 505 are formed over the substrate 501. In addition, an input terminal 502 is formed at one end of the substrate, and wiring 503 connected to each driving circuit is routed.
[0071]
In order to manufacture a liquid crystal display device, a counter substrate is bonded with a gap using a sealing material, and liquid crystal is injected into the gap. In the light emitting device, an organic light emitting element is formed in the pixel portion. Thus, according to this embodiment, various semiconductor devices can be manufactured.
[0072]
[Example 4]
As shown in Example 1, the method of adding a catalytic metal element to the entire surface of the amorphous semiconductor film for crystallization can be performed using the heat treatment apparatus of the present invention. More preferably, the metal element is then removed by gettering.
[0073]
FIG. 16 is a diagram for explaining an embodiment of the present invention, which is a method for performing gettering after adding a catalytic metal element to the entire surface of the amorphous semiconductor film to crystallize it. In FIG. 16A, a substrate 601 can be formed using barium borosilicate glass, aluminoborosilicate glass, quartz, or the like. An inorganic insulating film having a thickness of 10 to 200 nm is formed on the surface of the substrate 601 as the blocking layer 602. The blocking layer 602 is provided so that the alkali metal contained in the glass substrate does not diffuse into the semiconductor film formed in the upper layer, and can be omitted when quartz is used as the substrate.
[0074]
For the semiconductor film 603 having an amorphous structure formed over the blocking layer 602, a semiconductor material containing silicon as a main component is used. Typically, an amorphous silicon film, an amorphous silicon germanium film, or the like is applied, and the film is formed to a thickness of 10 to 100 nm by a plasma CVD method, a low pressure CVD method, or a sputtering method. In order to obtain a high-quality crystal, it is necessary to reduce the concentration of impurities such as oxygen, nitrogen, and carbon contained in the semiconductor film 603 having an amorphous structure as much as possible. It is desirable to use a high vacuum compatible CVD apparatus.
[0075]
After that, a catalytic metal element that promotes crystallization is added to the surface of the semiconductor film 603 having an amorphous structure. A catalyst-containing layer 604 is formed by applying a nickel acetate salt solution containing 1 to 10 ppm of nickel in terms of weight with a spinner. In this case, in order to improve the familiarity of the solution, as the surface treatment of the semiconductor film 603 having an amorphous structure, an extremely thin oxide film is formed with an ozone-containing aqueous solution, and the oxide film is formed using hydrofluoric acid and hydrogen peroxide After etching with the mixed solution, a clean surface is formed, and then an ultrathin oxide film is formed again by treatment with an aqueous solution containing ozone. Since the surface of the semiconductor film such as silicon is inherently hydrophobic, the nickel acetate salt solution can be uniformly applied by forming the oxide film in this way.
[0076]
Needless to say, the catalyst-containing layer 604 is not limited to such a method, and may be formed by sputtering, vapor deposition, plasma treatment, or the like.
[0077]
Then, using the heat treatment apparatus of the present invention in the same manner as in Example 1, 13.3 to 1.33 × 10 ^Four A crystalline semiconductor film 605 shown in FIG. 16B can be formed by irradiation with pulsed light under reduced pressure of Pa.
[0078]
It is also effective to irradiate the crystalline semiconductor film 605 with laser light in order to increase the crystallization rate (ratio of the crystal component in the total volume of the film) and repair defects remaining in the crystal grains. . As the laser, excimer laser light having a wavelength of 400 nm or less, and second and third harmonics of a YAG laser are used. In any case, pulse laser light having a repetition frequency of about 10 to 1000 Hz is used, and the laser light is 100 to 400 mJ / cm in the optical system. ² The crystalline semiconductor film 605 may be subjected to laser treatment with a 90 to 95% overlap rate.
[0079]
In the crystalline semiconductor film 605 thus obtained, a metal element (here, nickel) remains. Although it is not uniformly distributed in the film, if it is an average concentration, it is 1 × 10 ¹⁹ /cm ^Three Remaining at a concentration exceeding Of course, various semiconductor elements including TFTs can be formed even in such a state, but it is more preferable to remove the element by gettering.
[0080]
FIG. 16B shows a step of adding a rare gas element or a rare gas element and an impurity element having one conductivity type to the crystalline semiconductor film 605 by an ion doping method in order to form the gettering site 608. On the surface of the crystalline semiconductor film 605, a silicon oxide film 606 for masking is formed to a thickness of 100 to 200 nm, an opening 607 is provided, and a region where the crystalline semiconductor film is exposed is exposed to a rare gas element or a rare gas. A gas element and an impurity element of one conductivity type are added. The concentration of the rare gas element in the crystalline semiconductor film is 1 × 10 ¹⁹ ~ 1x10 ^{twenty one} /cm ^Three And
[0081]
This doping can be achieved with phosphine (PH) diluted with hydrogen to 1-10%, preferably 3-5%. _Three ) Or diborane (B ₂ H ₆ ) Is added and then a rare gas element is added. Or PH diluted to 1-10%, preferably 3-5% with noble gas _Three Or B ₂ H ₆ Add. However, more preferably, only a rare gas element is added by an ion doping method to form a gettering site.
[0082]
As the rare gas element, one or more selected from helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) are used. Typically, argon is used. The present invention is characterized in that these inert gases are used as an ion source to form a gettering site and are implanted into a semiconductor film by an ion doping method or an ion implantation method. There are two meanings of implanting these inert gas ions. One is to form a dangling bond by implantation to give distortion to the semiconductor film, and the other is to give distortion by implanting the ions between the lattices of the semiconductor film. Implanting inert gas ions can satisfy both of these simultaneously, but the latter is particularly prominent when elements having a larger atomic radius than silicon, such as argon (Ar), krypton (Kr), and xenon (Xe), are used. It is done.
[0083]
When gettering is performed in a nitrogen atmosphere at 450 to 800 ° C. for 1 to 24 hours, for example, at 550 ° C. for 14 hours, the gettering site 608 can segregate the metal element. Alternatively, using the heat treatment apparatus of the present invention in the same manner as in Example 1, 13.3 to 1.33 × 10 ^Four It can also be performed by irradiation with pulsed light under reduced pressure of Pa. In that case, in order to achieve gettering effectively, the temperature of the semiconductor film heated by the pulsed light is set to a temperature at which the lattice is relaxed and distortion is not removed.
[0084]
After that, when the gettering site is removed by etching, a crystalline semiconductor film 609 in which the concentration of the metal element is reduced is obtained as shown in FIG. The crystalline silicon film 608 formed in this manner is formed by a collection of rod-like or needle-like crystals, and each crystal grows with a specific direction as viewed macroscopically. In particular, when a gettering site is formed using only a rare gas element, the TFT shown in Embodiment 2 or 3 can be formed using this crystalline semiconductor film 609 as it is.
[0085]
[Example 5]
A method for selectively forming an element for promoting crystallization of a semiconductor film will be described with reference to FIG. In FIG. 17A, a blocking layer 602 is provided in the case where a glass substrate is used as the substrate 601. Further, the semiconductor film 603 having an amorphous structure is formed in the same manner as in the first embodiment.
[0086]
Then, a silicon oxide film 610 having a thickness of 100 to 200 nm is formed over the semiconductor film 603 having an amorphous structure. A method for forming the silicon oxide film is not limited. For example, tetraethyl orthosilicate (TEOS) and O ₂ The reaction pressure is 40 Pa, the substrate temperature is 300 to 400 ° C., and the high frequency (13.56 MHz) power density is 0.5 to 0.8 W / cm. ² To discharge and form.
[0087]
Next, an opening 611 is formed in the silicon oxide film 610, and a nickel acetate salt solution containing 1 to 10 ppm of nickel in terms of weight is applied. As a result, a catalytic metal-containing layer 612 is formed, which contacts the semiconductor film 603 only at the bottom of the opening 611.
[0088]
A crystalline semiconductor film 605 shown in FIG. 17B can be formed by pulsed light irradiation under reduced pressure of 1 to 200 Pa using the heat treatment apparatus of the present invention as in Example 1. In this case, crystallization forms silicide in the portion of the semiconductor film in contact with the metal element serving as a catalyst, and crystallization proceeds in the direction parallel to the surface of the substrate with this as a nucleus. The crystalline silicon film 614 formed in this manner is formed by a collection of rod-like or needle-like crystals, and each of the crystals grows in a specific direction when viewed macroscopically.
[0089]
Next, using the opening 611, the gettering site 615 is formed by adding only a rare gas element or a rare gas element and an impurity element having one conductivity type by an ion doping method. When gettering is performed in a nitrogen atmosphere at 450 to 800 ° C. for 1 to 24 hours, for example, at 550 ° C. for 14 hours, the gettering site 615 can segregate the metal element. Alternatively, using the heat treatment apparatus of the present invention in the same manner as in Example 1, 13.3 to 1.33 × 10 ^Four It can be performed by irradiation with pulsed light under reduced pressure of Pa. Even in that case, in order to achieve gettering effectively, the temperature of the semiconductor film heated by the pulsed light is set to a temperature at which the lattice is relaxed and distortion is not removed.
[0090]
After that, when the gettering site is removed by etching, a crystalline semiconductor film 616 in which the concentration of the metal element is reduced is obtained as shown in FIG. The TFT shown in Embodiment 2 or 3 can be formed using the crystalline semiconductor film 609 as it is.
[0091]
[Example 6]
In gettering using a rare gas element as shown in Example 4 or 5, a rare gas element is added to an impurity region for forming a source / drain region in the TFT manufacturing process shown in Example 2. Thus, the same effect can be obtained. That is, the concentration of the metal element remaining in the channel formation region can be reduced by performing heat treatment for activation performed in order to reduce the resistivity of the impurity region.
[0092]
[Example 7]
Various semiconductor devices can be manufactured by using the present invention. As such semiconductor devices, video cameras, digital cameras, goggle type display devices (head mounted displays), navigation systems, sound playback devices (car audio, audio components, etc.), notebook personal computers, game machines, portable information terminals ( A mobile computer, a mobile phone, a portable game machine, an electronic book, or the like), an image reproducing device including a recording medium, and the like. Specific examples of these semiconductor devices are shown in FIGS.
[0093]
FIG. 18A illustrates a monitor such as a desktop personal computer, which includes a housing 3301, a support base 3302, a display portion 3303, and the like. According to the present invention, a monitor can be manufactured by forming the display portion 3303 and other integrated circuits.
[0094]
FIG. 18B illustrates a video camera, which includes a main body 3311, a display portion 3312, an audio input portion 3313, operation switches 3314, a battery 3315, an image receiving portion 3316, and the like. According to the present invention, a video camera can be manufactured by forming the display portion 3312 and other integrated circuits.
[0095]
FIG. 18C shows a part (right side) of the head mounted display, which includes a main body 3321, a signal cable 3322, a head fixing band 3323, a projection unit 3324, an optical system 3325, a display unit 3326, and the like. According to the present invention, a head mounted display can be manufactured by forming the display portion 3326 and other integrated circuits.
[0096]
FIG. 18D illustrates an image reproduction device (specifically, a DVD reproduction device) provided with a recording medium, which includes a main body 3331, a recording medium (DVD or the like) 3332, an operation switch 3333, a display unit (a) 3334, and a display unit. (B) 3335 or the like. The display unit (a) 3334 mainly displays image information, and the display unit (b) 3335 mainly displays character information. According to the present invention, the display unit (a) 3334, the display unit (b) 3335, and other integrated circuits are displayed. And an image reproducing apparatus can be manufactured. Note that home video game machines and the like are included in the image reproducing device provided with the recording medium.
[0097]
FIG. 18E illustrates a goggle type display device (head mounted display), which includes a main body 3341, a display portion 3342, and an arm portion 3343. According to the present invention, a goggle type display device can be manufactured by forming the display portion 3342 and other integrated circuits.
[0098]
FIG. 18F illustrates a laptop personal computer including a main body 3351, a housing 3352, a display portion 3353, a keyboard 3354, and the like. According to the present invention, a display portion 3353 and other integrated circuits can be formed to form a notebook personal computer.
[0099]
FIG. 19A illustrates a cellular phone device, which includes a main body 3401, an audio output portion 3402, an audio input portion 3403, a display portion 3404, operation switches 3405, and an antenna 3406. According to the present invention, a display portion 3404 and other integrated circuits can be formed to form a mobile phone device.
[0100]
FIG. 19B shows a sound reproducing device, specifically a car audio, which includes a main body 3411, a display portion 3412, and operation switches 3413 and 3414. According to the present invention, the display portion 3412 can be formed and a sound reproducing device can be manufactured. Moreover, although the vehicle-mounted audio is shown in the present embodiment, it may be used for a portable or household sound reproducing device.
[0101]
FIG. 19C illustrates a digital camera, which includes a main body 3501, a display portion (A) 3502, an eyepiece portion 3503, operation switches 3504, a display portion (B) 3505, and a battery 3506. According to the present invention, a display portion (A) 3502 display portion (B) 3505 and other integrated circuits can be formed to form a digital camera.
[0102]
As described above, the applicable range of the present invention is so wide that the present invention can be applied to various electronic devices. Also, the electronic device of the present embodiment can be realized by using a configuration composed of any combination of the first to sixth embodiments.
[0103]
【The invention's effect】
As described above, the heat treatment apparatus of the present invention can perform heat treatment for the purpose of crystallization of an amorphous semiconductor film or activation of an impurity element added to the semiconductor film in a short time.
[0104]
Further, the lighting time per light source is set to 0.1 to 60 seconds, preferably 0.1 to 20 seconds, the light from the light source is irradiated a plurality of times, and the holding time of the maximum temperature of the semiconductor substrate is set to 0. By setting it as 5 to 5 seconds, even if it uses a glass substrate with low heat resistance, the heat processing effect can be heightened and damage to the layer with low heat resistance formed in the semiconductor substrate can be prevented.
[0105]
Further, by performing the above heat treatment under reduced pressure, the oxygen concentration in the atmosphere is reduced, oxidation of the surface of the semiconductor film is suppressed, activation of impurities is promoted, and heat treatment with high reproducibility can be performed.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a configuration of a heat treatment apparatus of the present invention.
FIG. 2 is a diagram illustrating a configuration of a heat treatment apparatus according to the present invention.
FIG. 3 is a diagram illustrating a configuration of a heat treatment apparatus according to the present invention.
FIG. 4 is a diagram illustrating a configuration of a heat treatment apparatus according to the present invention.
FIG. 5 illustrates an example of a heating unit and a cooling unit.
FIG. 6 is a diagram for explaining blinking of a light source and a temperature change of a semiconductor substrate.
FIGS. 7A and 7B illustrate a method of preheating and heat treatment using pulsed light irradiation. FIGS.
FIG. 8 is a diagram showing an example of a control circuit suitable for using a halogen lamp or the like as a light source and blinking the light source in pulses.
FIG. 9 is a view for explaining a semiconductor film heat treatment method by the heat treatment apparatus of the present invention.
10A and 10B illustrate a manufacturing process of a semiconductor device.
11A and 11B illustrate a semiconductor film heat treatment method using the heat treatment apparatus of the present invention.
12A to 12C illustrate a manufacturing process of a semiconductor device.
FIG. 13 illustrates a structure of a substrate in which a driver circuit and a pixel portion are formed over the same substrate.
FIG 14 illustrates a structure of a pixel portion.
FIG. 15 illustrates an appearance of an element substrate of a display device.
16A to 16C illustrate a method for manufacturing a crystalline semiconductor film of the present invention.
FIGS. 17A to 17C illustrate a method for manufacturing a crystalline semiconductor film of the present invention. FIGS.
FIG 18 illustrates an example of a semiconductor device.
FIG 19 illustrates an example of a semiconductor device.

Claims (6)

  A light source is provided outside the reaction tube, heated gas is supplied into the reaction tube, the light source flashes in a pulse with a period of 1 second or less, and is a semiconductor film formed on a glass substrate Heating the object to be processed placed in the reaction tube by a first step of heating the body and a second step of heating the object to be processed by flashing the light source in a pulse manner with a period of 1 second or longer A method for manufacturing a semiconductor device.   A light source is provided outside the reaction tube, the inside of the reaction tube is maintained at a reduced pressure, and a heated gas is supplied into the reaction tube, and the light source flashes in pulses in a cycle of 1 second or less on the glass substrate. In the reaction tube by a first step of heating the object to be processed which is a semiconductor film formed on the substrate, and a second step of heating the object to be processed by blinking the light source in a pulsed manner with a period of 1 second or more. A method for manufacturing a semiconductor device, wherein the object to be processed placed on a substrate is heated. According to claim 1 or claim 2, wherein the light source is a halogen lamp, a method of manufacturing a semiconductor device, characterized in that a metal halide lamp, high pressure mercury lamp, high pressure sodium lamp, which is one selected from a xenon lamp.   A semiconductor film in which an impurity region of one conductivity type is formed is installed in a reaction tube, a light source is provided outside the reaction tube, heated gas is supplied into the reaction tube, and the light source has a period of 1 second or less. The first stage of heating the object to be processed which is a semiconductor film formed on the glass substrate, and the light source flashes in pulses at a cycle of 1 second or more to form the object to be processed. A method for manufacturing a semiconductor device, wherein the object to be processed placed in the reaction tube is heated by a second stage of heating.   A semiconductor film in which an impurity region of one conductivity type is formed is installed in a reaction tube, a light source is provided outside the reaction tube, the inside of the reaction tube is maintained at a reduced pressure, and a heated gas is introduced into the reaction tube. Supplying a first stage of flashing the light source in a pulsed manner with a cycle of 1 second or less to heat the object to be processed which is a semiconductor film formed on the glass substrate; and pulsing the light source with a cycle of 1 second or more A method for manufacturing a semiconductor device, comprising: heating the object to be processed placed in the reaction tube by a second stage of flashing in a shape to heat the object to be processed. According to claim 4 or claim 5, wherein the light source is a halogen lamp, a method of manufacturing a semiconductor device, characterized in that a metal halide lamp, high pressure mercury lamp, high pressure sodium lamp, which is one selected from a xenon lamp.

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