JPS6484717A - Semiconductor thin film vapor growth apparatus - Google Patents

Abstract

PURPOSE:To obtain an apparatus capable of mass production of semiconductor thin film having excellent steepness in an interface and of setting a substrate stably, by setting a gas guide circular plate above a susceptor and supplying a gas of the row material from the margin of the circular plate to the space between the susceptor and the circular plate such that it may flow toward the center of the susceptor and the circular plate. CONSTITUTION:In an apparatus in which a row material gas flows on the surface of a semiconductor substrate 6 held on a susceptor 5 of a reaction chamber 2 to grow the thin film of the semiconductor on substrate 6 by heating the substrate 6, the upper surface of the susceptor 5 in made plane or recessed like a bowl and a rotatable supporting axis 15 is attached beneath the center of the susceptor 5. A gas guide circular plate 4 having the lower surface of a plane or projected surface of a cone is oppositely provided above the susceptor 5. The circular plate 4 is supported by a center axis 3 provided on a virtual extension line of the supporting axis 15 above the center thereof and an air outlet 8 is provided in the center of the susceptor or the circular plate 4. Then, the row material gas is supplied from the margin of the circular plate 4 to the space between the susceptor 5 and the circular plate 4 so as to flow toward the susceptor 5 and the circular plate 4 and then exhausted though the air outlet 8.