JPS6439718A - Manufacture of thin film - Google Patents

Manufacture of thin film

Info

Publication number
JPS6439718A
JPS6439718A JP19691287A JP19691287A JPS6439718A JP S6439718 A JPS6439718 A JP S6439718A JP 19691287 A JP19691287 A JP 19691287A JP 19691287 A JP19691287 A JP 19691287A JP S6439718 A JPS6439718 A JP S6439718A
Authority
JP
Japan
Prior art keywords
nozzle
scanned
substrate
material gas
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19691287A
Other languages
Japanese (ja)
Inventor
Naoki Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP19691287A priority Critical patent/JPS6439718A/en
Publication of JPS6439718A publication Critical patent/JPS6439718A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To uniformly grow a film of large area without loving a substrate by scanning an injection nozzle of material gas along the substrate face in an apparatus for performing a CVD method. CONSTITUTION:A nozzle 4 for injecting material gas is connected to a material gas introducing tube 41 by a flexible tube 43 to inject the gas toward both substrates 3 on a support 2. The nozzle 4 can be scanned in a charged particle beam incident direction. A beam 7 emitted from a charged particle beam source 6 is so controlled as to always focus it in the vicinity of a gas injection port 42 at the end of the nozzle 4 which can be scanned through an orifice 12. When the nozzle 4 is scanned in the incident direction of the beam 7 while growing the film, the space of a reaction chamber 1 can be reduced as compared with the case that the substrate is moved.
JP19691287A 1987-08-06 1987-08-06 Manufacture of thin film Pending JPS6439718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19691287A JPS6439718A (en) 1987-08-06 1987-08-06 Manufacture of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19691287A JPS6439718A (en) 1987-08-06 1987-08-06 Manufacture of thin film

Publications (1)

Publication Number Publication Date
JPS6439718A true JPS6439718A (en) 1989-02-10

Family

ID=16365725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19691287A Pending JPS6439718A (en) 1987-08-06 1987-08-06 Manufacture of thin film

Country Status (1)

Country Link
JP (1) JPS6439718A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335239A (en) * 1992-05-27 1993-12-17 Tokyo Electron Ltd Film forming apparatus
US6884298B2 (en) * 2000-05-10 2005-04-26 Tokyo Electron Limited Method and system for coating and developing
JP2008053298A (en) * 2006-08-22 2008-03-06 Hitachi Kokusai Electric Inc Semiconductor manufacturing system
JP2008053504A (en) * 2006-08-25 2008-03-06 Hitachi Kokusai Electric Inc Semiconductor manufacturing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05335239A (en) * 1992-05-27 1993-12-17 Tokyo Electron Ltd Film forming apparatus
US6884298B2 (en) * 2000-05-10 2005-04-26 Tokyo Electron Limited Method and system for coating and developing
JP2008053298A (en) * 2006-08-22 2008-03-06 Hitachi Kokusai Electric Inc Semiconductor manufacturing system
JP2008053504A (en) * 2006-08-25 2008-03-06 Hitachi Kokusai Electric Inc Semiconductor manufacturing apparatus

Similar Documents

Publication Publication Date Title
SE2210947T5 (en)
AU7450596A (en) Gas injection system for semiconductor processing
AU1822288A (en) Method of treating surfaces of substrates with the aid of a plasma
CA2016202A1 (en) Multiple oxidant jet combustion method and apparatus
JPS57167631A (en) Plasma vapor-phase growing method
JPS6439718A (en) Manufacture of thin film
JP3126787B2 (en) Film forming method and film forming apparatus
DE68916529T2 (en) Ion implantation system for the uniform injection of an ion beam into a substrate.
JPS5223358A (en) Process for fabricating a membrane for controlling the orientation of a liquid crystal display unit
US4726320A (en) Laser CVD device
JPS57200569A (en) Apparatus for treating surface with gas decomposed by light
DE69201695T2 (en) Process and effusion cell for generating molecular beams.
KR920002169B1 (en) Plasma discharge deposition process and a suitable apparatus therefor
JPS5669238A (en) Apparatus for coating optical fiber
JPS5518077A (en) Device for growing film under gas
KR960026125A (en) Diamond-like thin film production apparatus and its manufacturing method
JPS57167630A (en) Plasma vapor-phase growing device
JPS544567A (en) Growing apparatus of ion beam crystal
Zhang et al. Growth control of GaAs using short-pulse supersonic beam epitaxy
JPS6459822A (en) Cleaning of si surface and its apparatus
JPS5767038A (en) Manufacture of base material for optical fiber
JPH07126097A (en) Thin film growing method by supersonic molecular beam and device therefor
JPS5543348A (en) Furnace with swirling jet layer
JPS6441212A (en) Semiconductor crystal growth method
JPS649890A (en) Apparatus for molecular beam growth