JPS6459822A - Cleaning of si surface and its apparatus - Google Patents
Cleaning of si surface and its apparatusInfo
- Publication number
- JPS6459822A JPS6459822A JP21501787A JP21501787A JPS6459822A JP S6459822 A JPS6459822 A JP S6459822A JP 21501787 A JP21501787 A JP 21501787A JP 21501787 A JP21501787 A JP 21501787A JP S6459822 A JPS6459822 A JP S6459822A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- adsorbed
- bond
- heater
- clean
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
PURPOSE:To clean the surface of an Si substrate by a method wherein, after the surface of the Si substrate has been exposed to an atmosphere of Cl2 gas in a vacuum at a comparatively low temperature, it is heated again and an arrangement of an SiCl bond on the surface of the substrate is formed uniformly. CONSTITUTION:After an Si substrate 12 has been heated by using a heater 14, the Si substrate 12 is irradiated with a Cl radical beam 22 from a Cl radical beam supply source 23. Cl is adsorbed to a dangling bond on the surface of Si; H which has been adsorbed to the surface of Si is replaced by Cl; a uniform arrangement of an SiCl bond is formed on the surface of Si. The substrate 12 is heated again by using the heater 14. The Cl which has been adsorbed to the surface of the Si substrate is disconnected; after that, the surface becomes the clean surface where the dangling bonding is rearranged and is in good order from a viewpoint of an electron band structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21501787A JPS6459822A (en) | 1987-08-31 | 1987-08-31 | Cleaning of si surface and its apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21501787A JPS6459822A (en) | 1987-08-31 | 1987-08-31 | Cleaning of si surface and its apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459822A true JPS6459822A (en) | 1989-03-07 |
Family
ID=16665347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21501787A Pending JPS6459822A (en) | 1987-08-31 | 1987-08-31 | Cleaning of si surface and its apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459822A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0325934A (en) * | 1989-06-23 | 1991-02-04 | Nec Corp | Method for removal of halogen containing layer adsorbed onto solid surface |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61270830A (en) * | 1985-05-24 | 1986-12-01 | Nec Corp | Surface cleaning method |
JPS6276632A (en) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | Surface treatment device |
JPS62136827A (en) * | 1985-12-11 | 1987-06-19 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-08-31 JP JP21501787A patent/JPS6459822A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61270830A (en) * | 1985-05-24 | 1986-12-01 | Nec Corp | Surface cleaning method |
JPS6276632A (en) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | Surface treatment device |
JPS62136827A (en) * | 1985-12-11 | 1987-06-19 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0325934A (en) * | 1989-06-23 | 1991-02-04 | Nec Corp | Method for removal of halogen containing layer adsorbed onto solid surface |
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