JPS6459822A - Cleaning of si surface and its apparatus - Google Patents

Cleaning of si surface and its apparatus

Info

Publication number
JPS6459822A
JPS6459822A JP21501787A JP21501787A JPS6459822A JP S6459822 A JPS6459822 A JP S6459822A JP 21501787 A JP21501787 A JP 21501787A JP 21501787 A JP21501787 A JP 21501787A JP S6459822 A JPS6459822 A JP S6459822A
Authority
JP
Japan
Prior art keywords
substrate
adsorbed
bond
heater
clean
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21501787A
Other languages
Japanese (ja)
Inventor
Nahomi Takasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21501787A priority Critical patent/JPS6459822A/en
Publication of JPS6459822A publication Critical patent/JPS6459822A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To clean the surface of an Si substrate by a method wherein, after the surface of the Si substrate has been exposed to an atmosphere of Cl2 gas in a vacuum at a comparatively low temperature, it is heated again and an arrangement of an SiCl bond on the surface of the substrate is formed uniformly. CONSTITUTION:After an Si substrate 12 has been heated by using a heater 14, the Si substrate 12 is irradiated with a Cl radical beam 22 from a Cl radical beam supply source 23. Cl is adsorbed to a dangling bond on the surface of Si; H which has been adsorbed to the surface of Si is replaced by Cl; a uniform arrangement of an SiCl bond is formed on the surface of Si. The substrate 12 is heated again by using the heater 14. The Cl which has been adsorbed to the surface of the Si substrate is disconnected; after that, the surface becomes the clean surface where the dangling bonding is rearranged and is in good order from a viewpoint of an electron band structure.
JP21501787A 1987-08-31 1987-08-31 Cleaning of si surface and its apparatus Pending JPS6459822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21501787A JPS6459822A (en) 1987-08-31 1987-08-31 Cleaning of si surface and its apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21501787A JPS6459822A (en) 1987-08-31 1987-08-31 Cleaning of si surface and its apparatus

Publications (1)

Publication Number Publication Date
JPS6459822A true JPS6459822A (en) 1989-03-07

Family

ID=16665347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21501787A Pending JPS6459822A (en) 1987-08-31 1987-08-31 Cleaning of si surface and its apparatus

Country Status (1)

Country Link
JP (1) JPS6459822A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0325934A (en) * 1989-06-23 1991-02-04 Nec Corp Method for removal of halogen containing layer adsorbed onto solid surface

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270830A (en) * 1985-05-24 1986-12-01 Nec Corp Surface cleaning method
JPS6276632A (en) * 1985-09-30 1987-04-08 Toshiba Corp Surface treatment device
JPS62136827A (en) * 1985-12-11 1987-06-19 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270830A (en) * 1985-05-24 1986-12-01 Nec Corp Surface cleaning method
JPS6276632A (en) * 1985-09-30 1987-04-08 Toshiba Corp Surface treatment device
JPS62136827A (en) * 1985-12-11 1987-06-19 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0325934A (en) * 1989-06-23 1991-02-04 Nec Corp Method for removal of halogen containing layer adsorbed onto solid surface

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