JPS6411324A - Heat treatment device - Google Patents
Heat treatment deviceInfo
- Publication number
- JPS6411324A JPS6411324A JP16728287A JP16728287A JPS6411324A JP S6411324 A JPS6411324 A JP S6411324A JP 16728287 A JP16728287 A JP 16728287A JP 16728287 A JP16728287 A JP 16728287A JP S6411324 A JPS6411324 A JP S6411324A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- heat treatment
- lamps
- gaas
- gaas wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Resistance Heating (AREA)
Abstract
PURPOSE:To provide the whole surface of a semiconductor wafer with uniform temperature heat treatment and to prevent the wafer from being deformed, by composing a plurality of lamps disposed in the form of concentric circles which have central points on a vertical center line of the semiconductor wafer and are positioned on planes parallel to the semiconductor wafer, and by supplying power controlled independently to the respective lamps. CONSTITUTION:A GaAs wafer 10 provided with heat treatment is held on a silicon wafer 51, and this silicon wafer 51 is held inside a quartz tube 4 by means of a holding part 5 composed of quartz rings 52 or the like. Lamp units 3a, 3b are provided respectively with four ringed lamps 31a to 31d which are disposed in the form of concentric circles which have central points on a vertical center axis Z of the GaAs wafer 10 and are positioned on planes parallel to the GaAs wafer 10. The units are formed to interpose the GaAs wafer 10 between both their sides with the quartz tube 4 in between. A power supply part 2 is controlled by a program controlling part 1 so that power controlled is supplied independently to the respective lamps 31a to 31d. The whole surface of the GaAs wafer 10 can be hence provided with heat treatment of uniform temperature. The heat treatment is performed in a nitrogen atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16728287A JPS6411324A (en) | 1987-07-03 | 1987-07-03 | Heat treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16728287A JPS6411324A (en) | 1987-07-03 | 1987-07-03 | Heat treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6411324A true JPS6411324A (en) | 1989-01-13 |
Family
ID=15846860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16728287A Pending JPS6411324A (en) | 1987-07-03 | 1987-07-03 | Heat treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6411324A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06174376A (en) * | 1992-07-28 | 1994-06-24 | Internatl Business Mach Corp <Ibm> | Heating apparatus and heating method in successive moving belt-furnace |
| US5446825A (en) * | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
| US5536918A (en) * | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
| WO2001082348A1 (en) * | 2000-04-20 | 2001-11-01 | Tokyo Electron Limited | Thermal processing system |
| CN104379509A (en) * | 2012-06-06 | 2015-02-25 | 住友金属矿山株式会社 | Nickel composite hydroxide, positive electrode active material for non-aqueous electrolyte secondary cell, non-aqueous electrolyte secondary cell, and methods for producing these |
-
1987
- 1987-07-03 JP JP16728287A patent/JPS6411324A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5446825A (en) * | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
| US5536918A (en) * | 1991-08-16 | 1996-07-16 | Tokyo Electron Sagami Kabushiki Kaisha | Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers |
| JPH06174376A (en) * | 1992-07-28 | 1994-06-24 | Internatl Business Mach Corp <Ibm> | Heating apparatus and heating method in successive moving belt-furnace |
| WO2001082348A1 (en) * | 2000-04-20 | 2001-11-01 | Tokyo Electron Limited | Thermal processing system |
| JP2004514269A (en) * | 2000-04-20 | 2004-05-13 | 東京エレクトロン株式会社 | Heat treatment system |
| US6891131B2 (en) | 2000-04-20 | 2005-05-10 | Tokyo Electron Limited | Thermal processing system |
| CN104379509A (en) * | 2012-06-06 | 2015-02-25 | 住友金属矿山株式会社 | Nickel composite hydroxide, positive electrode active material for non-aqueous electrolyte secondary cell, non-aqueous electrolyte secondary cell, and methods for producing these |
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