JPS647519A - Annealing device - Google Patents

Annealing device

Info

Publication number
JPS647519A
JPS647519A JP16107287A JP16107287A JPS647519A JP S647519 A JPS647519 A JP S647519A JP 16107287 A JP16107287 A JP 16107287A JP 16107287 A JP16107287 A JP 16107287A JP S647519 A JPS647519 A JP S647519A
Authority
JP
Japan
Prior art keywords
ring
shaped
wafer
lamps
shaped lamps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16107287A
Other languages
Japanese (ja)
Inventor
Eiichi Umemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP16107287A priority Critical patent/JPS647519A/en
Publication of JPS647519A publication Critical patent/JPS647519A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Abstract

PURPOSE:To prevent the generation of a wafer slip line by a method wherein ring-like lamps are concentrically formed, and ring-shaped reflecting mirrors, which reflect and forcus the light sent from the ring-shaped lamps arranged corresponding to the end part of the outer circumference of a wafer, and it is made to irradiate on the outer circumferential end part, are provided. CONSTITUTION:Ring-shaped lamps 5 are concentrically arranged on a wafer 2 through quartz tubes 1. Among the ring-shaped lamps 5, a pair of the ring- shaped lamps 5a on the outermost side are excluded, and on the remaining ring-shaped lamps 5b, ring-shaped reflecting mirrors 6 are arranged. The ring- shaped lamps 5a on the outermost side on the upper and the lower sides are arranged on one forcus position of a pair of ring-shaped reflecting mirrors 7 having the reflection cross-section of oval arc shape. The light sent from the ring-shaped lamps 5b is formed into a parallel light by the ring-shaped reflecting mirrors 6, it is made to irradiate uniformly form both sides of the wafer 2. The light sent from the ring-shaped lamps 5a is formed into a focussed light by the ring-shaped reflection mirrors 7, and it is made to irradiate obliquely on the outer circumferential end part of the wafer 2. As a result, the temperature on the planar surface of the wafer 2 can be made uniform.
JP16107287A 1987-06-30 1987-06-30 Annealing device Pending JPS647519A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16107287A JPS647519A (en) 1987-06-30 1987-06-30 Annealing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16107287A JPS647519A (en) 1987-06-30 1987-06-30 Annealing device

Publications (1)

Publication Number Publication Date
JPS647519A true JPS647519A (en) 1989-01-11

Family

ID=15728089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16107287A Pending JPS647519A (en) 1987-06-30 1987-06-30 Annealing device

Country Status (1)

Country Link
JP (1) JPS647519A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2653215A1 (en) * 1989-10-17 1991-04-19 Sitesa Addax Device for heating a flat body, particularly a semiconductor board
EP0468874A2 (en) * 1990-07-25 1992-01-29 Sumitomo Electric Industries, Ltd. Lamp annealing process for semiconductor wafer and apparatus for execution of such process
EP0505928A3 (en) * 1991-03-26 1994-08-17 Siemens Ag Process for the rapid thermal annealing of a semiconductor wafer using irradiation
US6385396B1 (en) * 1999-05-12 2002-05-07 National Science Council Reflector structure for improving irradiation uniformity of linear lamp array
JP2002270532A (en) * 2001-03-14 2002-09-20 Tokyo Electron Ltd Heating device and thermal treatment apparatus
JP2005026354A (en) * 2003-06-30 2005-01-27 Toshiba Corp Heat treatment apparatus, heat treatment method, and method for manufacturing semiconductor device
JP2008226934A (en) * 2007-03-09 2008-09-25 Tokyo Electron Ltd Substrate treatment equipment
JP2015005652A (en) * 2013-06-21 2015-01-08 独立行政法人産業技術総合研究所 Thermal treatment device
JP2018181925A (en) * 2017-04-05 2018-11-15 ウシオ電機株式会社 Heating light source device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2653215A1 (en) * 1989-10-17 1991-04-19 Sitesa Addax Device for heating a flat body, particularly a semiconductor board
EP0468874A2 (en) * 1990-07-25 1992-01-29 Sumitomo Electric Industries, Ltd. Lamp annealing process for semiconductor wafer and apparatus for execution of such process
EP0468874A3 (en) * 1990-07-25 1992-06-03 Sumitomo Electric Industries, Ltd. Lamp annealing process for semiconductor wafer and apparatus for execution of such process
EP0505928A3 (en) * 1991-03-26 1994-08-17 Siemens Ag Process for the rapid thermal annealing of a semiconductor wafer using irradiation
US6385396B1 (en) * 1999-05-12 2002-05-07 National Science Council Reflector structure for improving irradiation uniformity of linear lamp array
JP2002270532A (en) * 2001-03-14 2002-09-20 Tokyo Electron Ltd Heating device and thermal treatment apparatus
JP2005026354A (en) * 2003-06-30 2005-01-27 Toshiba Corp Heat treatment apparatus, heat treatment method, and method for manufacturing semiconductor device
JP2008226934A (en) * 2007-03-09 2008-09-25 Tokyo Electron Ltd Substrate treatment equipment
JP2015005652A (en) * 2013-06-21 2015-01-08 独立行政法人産業技術総合研究所 Thermal treatment device
JP2018181925A (en) * 2017-04-05 2018-11-15 ウシオ電機株式会社 Heating light source device

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