JP2018181925A - Heating light source device - Google Patents

Heating light source device Download PDF

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JP2018181925A
JP2018181925A JP2017074991A JP2017074991A JP2018181925A JP 2018181925 A JP2018181925 A JP 2018181925A JP 2017074991 A JP2017074991 A JP 2017074991A JP 2017074991 A JP2017074991 A JP 2017074991A JP 2018181925 A JP2018181925 A JP 2018181925A
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heating
light
source device
light source
reflecting mirror
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JP7040899B2 (en
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修平 三輪田
Shuhei Miwata
修平 三輪田
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Ushio Denki KK
Ushio Inc
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Ushio Denki KK
Ushio Inc
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Abstract

PROBLEM TO BE SOLVED: To provide a structure capable of inhibiting light from a heating lamp from being irradiated on a seal portion of a processing chamber to prevent deterioration due to overheating in a heating light source device in which a plurality of light irradiating portions composed of an annular heating lamp and an annular reflecting mirror provided behind the heating lamp is concentrically arranged.SOLUTION: A reflecting mirror is a parabolic mirror. A light emission center of a heating lamp is disposed at a focal point of the reflecting mirror. An optical axis of the reflecting mirror in an outermost light irradiating portion positioned at least at the outermost position of the light irradiating portion is inclined toward a center axis side of a heating light source device.SELECTED DRAWING: Figure 1

Description

この発明は、円板状ワークを加熱するための加熱光源装置に関し、特に、環状の加熱ランプを同心円状に複数配置してなる加熱光源装置に係わるものである。   The present invention relates to a heating light source device for heating a disk-like work, and more particularly to a heating light source device in which a plurality of annular heating lamps are arranged concentrically.

半導体の基板処理装置は、基板処理として、半導体ウエハの熱アニールや、熱処理による酸化膜や窒化膜の形成、ドーパントの熱拡散、化学蒸着処理による薄膜形成など、多様な処理が必要となる。このような処理過程において、基板を加熱（例えば３００℃〜７００℃）するために、光照射による非接触な加熱手段として、ハロゲンランプ等の加熱光源が設けられている。例えば特許第２９２７８７７号公報（特許文献１）には、基板処理装置の実施態様の一例が記載されている。   A substrate processing apparatus for semiconductors requires various processes such as thermal annealing of a semiconductor wafer, formation of an oxide film or nitride film by heat treatment, thermal diffusion of a dopant, thin film formation by a chemical vapor deposition process as substrate processing. In such a process, in order to heat the substrate (for example, 300 ° C. to 700 ° C.), a heating light source such as a halogen lamp is provided as a non-contact heating means by light irradiation. For example, Japanese Patent No. 2927877 (Patent Document 1) describes an example of an embodiment of a substrate processing apparatus.

この特許文献１に記載された基板処理装置では、処理室内に半導体ウエハが支持固定され、窓用ガラス板を介して、主熱源となるハロゲンランプからウエハに対して光照射が行われるものであって、このとき、ランプには反射ミラーが設けられていて、ランプからの光を反射ミラーで反射して効率的にウエハに照射する構成とされている。
このような構成を実際に装置化したものが図７に示されていて、基板処理装置は、加熱光源装置１０と、その下方に配置された処置室２０とからなる。 In the substrate processing apparatus described in Patent Document 1, a semiconductor wafer is supported and fixed in a processing chamber, and light irradiation is performed on the wafer from a halogen lamp serving as a main heat source through a window glass plate. At this time, the lamp is provided with a reflection mirror, and light from the lamp is reflected by the reflection mirror to efficiently irradiate the wafer.
An actual apparatus of such a configuration is shown in FIG. 7, and the substrate processing apparatus comprises a heating light source device 10 and a treatment room 20 disposed therebelow.

処理室２０は、胴体部２１と、底板２２と、上板２３とからなり、この上板２３と胴体部２１の間には、石英ガラスなどからなる入射窓２４が設けられている。
処置室２０内には、載置台２５上に半導体ウエハなどのワークＷが載置されていて、この処理室２０内は気密に維持されている。
そのため、処理室２０の胴体部２１と底板２２は、Ｏリングなどのシール材２７を介して気密状に取付けられ、また、入射窓２４は、胴体部２１および上板２４との間にＯリングなどのシール材２８、２９を介して気密状に取付けられている。 The processing chamber 20 includes a body portion 21, a bottom plate 22, and an upper plate 23. Between the upper plate 23 and the body portion 21, an incident window 24 made of quartz glass or the like is provided.
In the treatment room 20, a work W such as a semiconductor wafer is placed on the mounting table 25, and the inside of the treatment room 20 is kept airtight.
Therefore, the body portion 21 and the bottom plate 22 of the processing chamber 20 are airtightly attached via the sealing material 27 such as an O-ring, and the entrance window 24 is an O-ring between the body portion 21 and the upper plate 24. Etc. are attached airtightly via the sealing materials 28 and 29.

この処理室２０の上方には、入射窓２４に対向して加熱光源装置１０が配置されている。この加熱光源装置１０は、環状の加熱ランプ１１と、当該加熱ランプ１１の背後に設けられた環状の反射鏡１２とで構成された光照射部１３が、同心円状に複数設けられてなる。
この反射鏡１２は、特許第２７２４７４９号公報（特許文献２）にも示されているように、放物面鏡を用いることが常套的であって、このような放物面鏡を用いる場合、フィラメントランプなどからなる加熱ランプ１１は、その発光中心が放物面反射鏡１２の焦点に位置される。これにより、加熱ランプ１１からの光は反射鏡１１により平行光となって反射されて、入射窓２４を介して処理室２０内のワークＷに照射されるものである。 The heating light source device 10 is disposed above the processing chamber 20 so as to face the incident window 24. The heating light source device 10 is formed by concentrically forming a plurality of light irradiators 13 each including an annular heating lamp 11 and an annular reflecting mirror 12 provided behind the heating lamp 11.
As shown in Japanese Patent No. 2724749 (Patent Document 2), it is customary to use a parabolic mirror, and when such a parabolic mirror is used: A heating lamp 11 composed of a filament lamp or the like has its light emission center located at the focal point of the parabolic reflector 12. As a result, the light from the heating lamp 11 is reflected as parallel light by the reflecting mirror 11, and the work W in the processing chamber 20 is irradiated via the incident window 24.

ところで、このような基板処理装置において、しばしば処理室を気密状態にシールするシール材が過熱されて劣化してしまうという問題が生じている。
上記したように、処理室２０においては、その胴体部２１は底板２２との間にシール材２７、入射窓２４と胴体部２１および上板２３との間にシール材２８、２９が介在しているが、これらシール材２７、２８、２９が、加熱光源装置１０の加熱ランプ１１からの光によって過熱劣化するという不具合が発生している。 By the way, in such a substrate processing apparatus, there is a problem that a sealing material for sealing a processing chamber in an airtight state is often overheated and deteriorated.
As described above, in the processing chamber 20, the body portion 21 has the sealing member 27 between the bottom plate 22 and the sealing members 28 and 29 between the incident window 24 and the body portion 21 and the upper plate 23. However, there is a problem that the sealing materials 27, 28, 29 are overheated and deteriorated by the light from the heating lamp 11 of the heating light source device 10.

その現象を図８により説明すると以下の通りである。
加熱ランプ１１が点光源（線光源）である場合は、加熱ランプ１１からの光は、放物面形状の反射鏡１２により反射されて平行光となって下方に出射されるが、加熱ランプ１１がフィラメントランプである場合、その発光中心は反射鏡１２の焦点に位置するものの、発光部分（フィラメント）は、所定の直径を有することから、反射鏡１２による反射光は、厳密な意味での平行光とはならず、一定程度拡散する拡散光Ｌとなることが避けられない。
そのため、反射鏡１２、特に、同心円状の最も外側に位置する光照射部１３の反射鏡１２からの反射光（拡散光Ｌ）が、前記シール材２７、２８、２９部分に照射され、シール材が過熱されてしまい劣化が進行するという問外が生じている。
この現象は、近時処理効率アップのための加熱ランプへの高入力化の傾向により、より深刻なものとなっている。 The phenomenon will be described below with reference to FIG.
When the heating lamp 11 is a point light source (line light source), light from the heating lamp 11 is reflected by the parabolic reflector 12 and emitted as parallel light and emitted downward. When the light source is a filament lamp, its light emission center is located at the focal point of the reflecting mirror 12, but the light emitting portion (filament) has a predetermined diameter, so that the reflected light by the reflecting mirror 12 is strictly parallel. It can not be avoided that it becomes diffused light L which does not become light and diffuses to a certain extent.
Therefore, the reflected light (diffuse light L) from the reflecting mirror 12, particularly the reflecting mirror 12 of the concentrically light emitting unit 13 located on the outermost side is irradiated to the portions of the sealing members 27, 28, 29, and the sealing member Is overheated, and there is a question that deterioration progresses.
This phenomenon is becoming more serious due to the trend of increasing the input power to the heating lamp to increase the processing efficiency in recent years.

特許第２９２７８７７号公報Patent No. 2927877 特許第２７２４７４９号公報Patent No. 2724749 gazette

この発明が解決しようとする課題は、ワークを加熱するための環状の加熱ランプと、当該加熱ランプの背後に設けられた環状の反射鏡とで構成された光照射部が、同心円状に複数配置されてなる加熱光源装置において、ワークを収容する処理室に用いられるシール材が光照射部からの光により過熱されて劣化することを防止することができる構造を提供することである。   The problem to be solved by the present invention is that a plurality of light irradiation parts configured by an annular heating lamp for heating a work and an annular reflecting mirror provided behind the heating lamp are arranged concentrically. It is an object of the present invention to provide a structure capable of preventing a sealing material used in a processing chamber that accommodates a workpiece from being overheated and deteriorated by light from a light irradiation unit.

上記課題を解決するために、この発明に係る加熱光源装置では、加熱ランプの背後の反射鏡は放物面鏡であり、当該反射鏡の焦点に前記加熱ランプの発光中心が配置されており、前記光照射部の少なくとも最も外側に位置する最外光照射部における前記反射鏡の光軸が、前記加熱光源装置の中心軸側に向けて傾斜されていることを特徴とする。
また、前記光照射部の各々の前記反射鏡の光軸が、前記加熱光源装置の中心軸に向けて傾斜されていることを特徴とする。
また、前記最外光照射部の反射鏡には、その外縁において垂直方向に垂下した遮光部が設けられていることを特徴とする。 In order to solve the above problems, in the heating light source device according to the present invention, the reflecting mirror behind the heating lamp is a parabolic mirror, and the light emission center of the heating lamp is disposed at the focal point of the reflecting mirror. The optical axis of the reflecting mirror in at least the outermost light irradiation unit positioned at the outermost side of the light irradiation unit is characterized by being inclined toward the central axis side of the heating light source device.
Further, the optical axis of the reflecting mirror of each of the light emitting parts is inclined toward the central axis of the heating light source device.
Further, the reflecting mirror of the outermost light irradiation portion is characterized in that a light shielding portion vertically suspended at the outer edge thereof is provided.

この発明の加熱光源装置によれば、加熱光源装置の少なくとも最外照射部の反射鏡からの拡散反射光が、加熱光源装置の中心軸方向に向かうため、処理室に用いられたシール材に直接的に照射されることがなく、その過熱による劣化を防止できるものである。
また、ワークに対してその有効照射領域に向けて拡散反射光が集約されて効果的な加熱処理が施される。 According to the heating light source device of the present invention, the diffuse reflection light from the reflecting mirror of at least the outermost irradiation part of the heating light source device is directed to the central axis direction of the heating light source device. Without being exposed to light, which can prevent its deterioration due to overheating.
Further, the diffuse reflection light is concentrated on the work toward the effective irradiation area, and effective heat treatment is performed.

本発明の加熱光源装置を有する基板処理装置の断面図Cross-sectional view of a substrate processing apparatus having a heating light source device of the present invention 本発明の加熱光源装置の模式図Schematic diagram of the heating light source device of the present invention 他の実施例の模式図Schematic diagram of another embodiment 本発明の効果を表す説明図Explanatory drawing showing the effect of the present invention 本発明の実験例Experimental example of the present invention 本発明の効果を表すグラフGraph showing the effect of the present invention 従来技術の断面図Cross section of prior art 従来技術の不具合の説明図Explanatory drawing of the defect of a prior art

図１に本発明の加熱光源装置を備えた基板処理装置が示されており、加熱光源装置１０においては、環状の加熱ランプ１１と、この加熱ランプ１１の背後に設けられた環状の放物面鏡からなる反射鏡１２とで構成された光照射部１３が、その垂直方向の中心軸Ｘを中心として同心円状に複数配置されている。これにより、光照射部１３の中心軸Ｘは、加熱光源装置１０の中心軸Ｘを形成する。
このとき、加熱ランプ１１は、その発光中心が、背後の反射鏡１２の焦点に位置するように配置されている。 FIG. 1 shows a substrate processing apparatus provided with a heating light source device of the present invention. In the heating light source device 10, an annular heating lamp 11 and an annular paraboloid provided behind the heating lamp 11 are shown. A plurality of light irradiators 13 composed of a reflecting mirror 12 and a mirror are arranged concentrically around a central axis X in the vertical direction. Thus, the central axis X of the light emitting unit 13 forms the central axis X of the heating light source device 10.
At this time, the heating lamp 11 is arranged such that its light emission center is located at the focal point of the reflecting mirror 12 behind it.

図２にその詳細が示されていて、複数の環状の加熱ランプ１１（１１ａ、１１ｂ、１１ｃ）と、この加熱ランプ１１の背後に設けられた複数の環状の放物面鏡からなる反射鏡１２（１２ａ、１２ｂ、１２ｃ）とで構成された複数の光照射部１３（１３ａ、１３ｂ、１３ｃ）が同心円状に配置されていて、その複数の光照射部１３のうち、同心円状の最も外側に位置する最外光照射部１３ｃにおける反射鏡１２ｃの光軸Ｙｃが、前記加熱光源装置１０の中心軸Ｘ側に向けて傾斜されている。それ以外の光照射部１３ａ、１３ｂの光軸Ｙａ、Ｙｂは中心軸Ｘと平行とされている。
なお、ここで、反射鏡１２の光軸Ｙとは、図２に見られるように、加熱光源装置１０の中心軸Ｘ（各光照射部１３の中心軸でもある）を含む垂直平面で断面したときの前記反射鏡の光軸をいう。 The detail is shown in FIG. 2, and a reflecting mirror 12 comprising a plurality of annular heating lamps 11 (11a, 11b, 11c) and a plurality of annular parabolic mirrors provided behind the heating lamps 11 is shown. A plurality of light irradiators 13 (13a, 13b, 13c) configured by (12a, 12b, 12c) are arranged concentrically, and the outermost of the plurality of light irradiators 13 in the concentric form is arranged. The optical axis Yc of the reflecting mirror 12c in the outermost light irradiation part 13c located is inclined toward the central axis X side of the heating light source device 10. The optical axes Ya and Yb of the other light irradiators 13a and 13b are parallel to the central axis X.
Here, as seen in FIG. 2, the optical axis Y of the reflecting mirror 12 is sectioned in a vertical plane including the central axis X of the heating light source device 10 (which is also the central axis of each light irradiation unit 13). It refers to the optical axis of the reflector at that time.

そして、前記最外光照射部１３ｃの反射鏡１２ｃには、その外縁に垂直方向に垂下した環状の遮光部１５が設けられている。
この遮光部１５は、特に、最外光照射部１３ｃの反射鏡１２ｃからの拡散反射光Ｌの外方に向かう光を遮光するとともに、加熱ランプ１１ｃからの直射光も遮光して、シール部への光照射を抑制する。 The reflecting mirror 12c of the outermost light emitting portion 13c is provided with an annular light shielding portion 15 suspended vertically to the outer edge thereof.
In particular, the light shielding portion 15 shields outward light of the diffuse reflected light L from the reflection mirror 12c of the outermost light irradiation portion 13c and also shields direct light from the heating lamp 11c to the seal portion. Suppress the light irradiation of

図３は、他の実施例であって、この例では、全ての光照射部１３（１３ａ、１３ｂ、１３ｃ）の反射鏡１２（１２ａ、１２ｂ、１２ｃ）の光軸Ｙａ、Ｙｂ、Ｙｃが加熱光源装置１０の中心軸Ｘに向かって傾斜している。その傾斜の程度（傾斜角）は必ずしも一定である必要はなく、ここでは、外側に行くほど傾斜角が大きくなっている。   FIG. 3 shows another embodiment, in which the optical axes Ya, Yb, Yc of the reflecting mirrors 12 (12a, 12b, 12c) of all the light emitting parts 13 (13a, 13b, 13c) are heated. The light source device 10 is inclined toward the central axis X. The degree of the tilt (tilt angle) does not have to be necessarily constant, and in this case, the tilt angle becomes larger as it goes to the outside.

図４は本発明の効果を表す説明図であって、最外光照射部１３ｃの反射鏡１２ｃの光軸Ｙｃが加熱光源装置１０の光軸方向に向かって傾斜していることで、加熱ランプ１１ｃからの光の反射光Ｌは、拡散していても、下方のシール材２７、２８、２９部分に直接照射されることがない。
この効果は、図３の実施例でも同様である。
なお、上記の実施例において、光照射部１３は３つのもの、即ち、環状の加熱ランプ１１が３本のものが示されているが、ワークＷの大きさとの関係でこの数に限定されるものではない。 FIG. 4 is an explanatory view showing the effect of the present invention, in which the optical axis Yc of the reflecting mirror 12c of the outermost light irradiation part 13c is inclined toward the optical axis direction of the heating light source device 10 The reflected light L from the light 11 c is not directly irradiated to the lower seal members 27, 28, 29 even if it is diffused.
This effect is the same as in the embodiment of FIG.
In the above embodiment, although three light irradiation units 13 are shown, that is, three annular heating lamps 11 are shown, the number of light irradiation units 13 is limited to this because of the size of the work W It is not a thing.

本発明の効果を実証するための実験を行った。実験に使用された加熱光源装置１０および処置室２０は、図５の通りである。このとき、各光照射部における各反射鏡の傾斜は図３に基づく構造であり、全ての反射鏡の光軸が傾斜している。
＜本発明＞
環状加熱ランプ：フィラメントランプ４本
外径：１０ｍｍ
直径：
第１の環状加熱ランプ： ５５ｍｍ
第２の環状加熱ランプ：１２５ｍｍ
第３の環状加熱ランプ：１９５ｍｍ
第４の環状加熱ランプ：２６５ｍｍ
加熱光源装置の各反射鏡の光軸の傾斜角度：
第１の反射鏡： ３°
第２の反射鏡： ７°
第３の反射鏡：１０°
第４の反射鏡：１４°
＜従来例＞
加熱ランプは本発明と同様。また、加熱光源装置の各反射鏡の光軸は、いずれも加熱光源装置の中心軸と平行（傾斜角度０°）。 An experiment was conducted to demonstrate the effect of the present invention. The heating light source device 10 and the treatment room 20 used in the experiment are as shown in FIG. At this time, the inclination of each reflecting mirror in each light irradiation part is a structure based on FIG. 3, and the optical axes of all the reflecting mirrors are inclined.
<Invention>
Annular heating lamp: 4 filament lamps Outer diameter: 10 mm
diameter:
First annular heating lamp: 55mm
Second annular heating lamp: 125 mm
Third annular heating lamp: 195 mm
Fourth annular heating lamp: 265 mm
Tilt angle of the optical axis of each reflector of the heating light source device:
First reflector: 3 °
Second reflector: 7 °
Third reflector: 10 °
Fourth reflector: 14 °
<Conventional example>
The heating lamp is the same as the present invention. In addition, the optical axes of the respective reflecting mirrors of the heating light source device are all parallel to the central axis of the heating light source device (inclination angle 0 °).

図６に、上記の実験によって得られた本発明および従来例のワーク面相当での照度分布が示されていて、有効照射範囲（ワークの大きさ：φ３００ｍｍ）より外側の裾部での照度が低下しており、これによって、シール材への光照射量が低下することが分かる。   The illuminance distribution on the work surface equivalent of the present invention and the conventional example obtained by the above experiment is shown in FIG. 6, and the illuminance at the foot outside the effective irradiation range (work size: φ300 mm) is It is understood that the light irradiation amount to the sealing material is lowered.

以上説明したように、本発明における加熱光源装置は、環状の加熱ランプと反射鏡とからなる光照射部を同心円状に複数配置し、そのうち、少なくとも最も外側に位置する最外光照射部における反射鏡の光軸が、加熱光源装置の中心軸側に向けて傾斜されていることにより、反射鏡で反射された拡散反射光が中心寄りに収束されて、シール材を照射することが抑制される。これにより、シール材の過熱が抑制されて、その劣化を防止することができる。
また、最外光照射部の反射鏡の外縁に垂直方向に垂下した遮光部が設けられていることで、シール材への光照射を更に効果的に抑制することができる。 As described above, in the heating light source device according to the present invention, a plurality of light irradiation units including an annular heating lamp and a reflecting mirror are concentrically arranged, and at least the reflection at the outermost light irradiation unit positioned outermost Since the optical axis of the mirror is inclined toward the central axis side of the heating light source device, the diffuse reflection light reflected by the reflection mirror is converged to the center and irradiation of the sealing material is suppressed. . Thereby, the overheating of the sealing material is suppressed, and the deterioration thereof can be prevented.
In addition, the provision of the light shielding portion vertically suspended on the outer edge of the reflecting mirror of the outermost light irradiation portion can further effectively suppress the light irradiation to the sealing material.

１０ 加熱光源装置
１１ 加熱ランプ
１２ 反射鏡（放物面鏡）
１３ 光照射部
１５ 遮光部
２０ 処理室
２１ 胴体部
２２ 底板
２３ 上板
２４ 入射窓
２５ 載置台
２７、２８、２９ シール材
Ｗ ワーク
Ｘ 加熱光源装置の中心軸
Ｙ 反射鏡の光軸


10 heating light source device 11 heating lamp 12 reflector (paraboloid mirror)
13 light irradiation unit 15 light shielding unit 20 processing chamber 21 body unit 22 bottom plate 23 upper plate 24 entrance window 25 mounting table 27, 28, 29 seal material W work X central axis of heating light source device Y optical axis of reflecting mirror


Claims (3)

環状の加熱ランプと、当該加熱ランプの背後に設けられた環状の反射鏡とで構成された光照射部が、同心円状に複数配置されてなる加熱光源装置において、
前記反射鏡は放物面鏡であり、当該反射鏡の焦点に前記加熱ランプの発光中心が配置されており、
前記光照射部の少なくとも最も外側に位置する最外光照射部における前記反射鏡の光軸が、前記加熱光源装置の中心軸側に向けて傾斜されていることを特徴とする加熱光源装置。 In a heating light source device in which a plurality of light irradiation parts configured by an annular heating lamp and an annular reflecting mirror provided behind the heating lamp are arranged concentrically,
The reflecting mirror is a parabolic mirror, and the light emission center of the heating lamp is disposed at the focal point of the reflecting mirror.
The heating light source device characterized in that the optical axis of the reflecting mirror in at least the outermost light irradiation portion located at the outermost side of the light irradiation portion is inclined toward the central axis side of the heating light source device. 前記光照射部の各々の前記反射鏡の光軸が、前記加熱光源装置の中心軸側に向けて傾斜されていることを特徴とする請求項１に記載の加熱光源装置。   The heating light source device according to claim 1, wherein an optical axis of the reflecting mirror of each of the light irradiation units is inclined toward a central axis side of the heating light source device. 前記最外光照射部における反射鏡は、その外縁において垂直方向に垂下した遮光部が設けられていることを特徴とする請求項１または２に記載の加熱光源装置。


The heating light source device according to claim 1 or 2, wherein the reflecting mirror in the outermost light irradiation portion is provided with a light shielding portion vertically suspended at an outer edge thereof.


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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023240726A1 (en) * 2022-06-17 2023-12-21 南京原磊纳米材料有限公司 Semiconductor reaction chamber heating device and method

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPS647519A (en) * 1987-06-30 1989-01-11 Oki Electric Ind Co Ltd Annealing device
JPH0845863A (en) * 1994-07-27 1996-02-16 Touyoko Kagaku Kk Single wafer semiconductor substrate heat treatment device
JP2003022982A (en) * 2001-07-09 2003-01-24 Tokyo Electron Ltd Heat treatment device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS647519A (en) * 1987-06-30 1989-01-11 Oki Electric Ind Co Ltd Annealing device
JPH0845863A (en) * 1994-07-27 1996-02-16 Touyoko Kagaku Kk Single wafer semiconductor substrate heat treatment device
JP2003022982A (en) * 2001-07-09 2003-01-24 Tokyo Electron Ltd Heat treatment device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023240726A1 (en) * 2022-06-17 2023-12-21 南京原磊纳米材料有限公司 Semiconductor reaction chamber heating device and method

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