JPH1197370A - Heat treating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat treating device by which the surface of an object to be treated can be irradiated with light of a high energy density. SOLUTION: A heat treating device performs a specified heat treatment by heating an object W to be treated placed on a table 8 in a treating receptacle 4. The heat treating device is provided with a light emitting source 38 reflecting light, a reflecting mirror means 46 for gathering light from the light emitting source onto the surface of the object to be treated and a scanning means for relatively scanning the gathered light on the surface of the object W to be treated. In this way, the surface of the object to be treated is irradiated with light of high energy density and only the surface of the object to be treated is subjected to a speedy heat treatment.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for performing a predetermined heat treatment by heating an object to be processed, such as a semiconductor wafer, and more particularly to a so-called single-wafer heat treatment apparatus for processing an object to be processed one by one. .

[0002]

2. Description of the Related Art In general, a single-wafer heat treatment apparatus is known as an apparatus for heating an object to be processed such as a semiconductor wafer one by one and subjecting the object to a predetermined heat treatment. In this method, a powerful resistance heater or a plurality of powerful heating lamps are arranged above or below a semiconductor wafer to be processed in order to heat a wafer in a processing container. Single wafer heat treatment equipment is required to have uniform temperature and high throughput. As the heat treatment of the semiconductor wafer, so-called annealing for maintaining the semiconductor wafer at a predetermined temperature for a predetermined time, film formation for forming a predetermined product on the surface of the object to be processed while maintaining a predetermined temperature in a predetermined reaction gas atmosphere, and the like are performed. Both heat treatments have the problem that, if the temperature in the plane of the wafer is not uniform, for example, the electrical conductivity of the crystal obtained by annealing varies, or the thickness of the formed film varies. cause. Therefore, regarding heat treatment of a semiconductor wafer, it is very important to maintain high in-plane uniformity of the wafer temperature.

[0003] As with the single-wafer heat treatment apparatus, there is a batch-type heat treatment apparatus for performing heat treatment on a semiconductor wafer. The batch-type heat treatment apparatus heat-treats about 100 semiconductor wafers at once. Although the apparatus forms are different from each other, each apparatus has its own characteristic. However, basically, unless the productivity, that is, the throughput is almost equal, the existence of the apparatus is lost.
To put it simply, a single-wafer heat treatment apparatus that processes wafers one by one must raise the temperature at a rate 100 times higher than that of a batch-type heat treatment apparatus and decrease the temperature at a rate 100 times higher.

[0004] The technical difficulty of a single-wafer apparatus is that it must have high in-plane uniformity of wafer temperature while having high temperature rising performance and high temperature lowering performance that can secure throughput. For example, when the apparatus is covered with a heat insulating material, the uniformity of the wafer temperature is improved, but the temperature lowering performance is deteriorated, and the apparatus cannot be used. For this reason, it can be said that the single-wafer apparatus generates a large and uniform heat flow between a heat source having a high heating capacity and a chamber having a sufficient cooling capacity, and places a wafer in the flow.

[0005]

Therefore, in the conventional single-wafer heat treatment apparatus, not only the wafer but also the mounting table for mounting the wafer is heated to a predetermined process temperature in the same manner as the wafer. In addition, it is necessary to rapidly lower the temperature after the end of the process. Therefore, there is a problem that most of the consumed power is wasted. For example, in a conventional ordinary single-wafer heat treatment apparatus, it is necessary to input power of 40 to 50 KW. Furthermore, even if a large amount of power is applied, not only the wafer but also the mounting table having a large heat capacity with respect to the wafer rises as described above, and the temperature of the mounting table must be lowered after the process. There is a problem that it takes time to heat and the throughput is reduced accordingly. Further, in a large and uniform heat flow between a heat source having a high heating capacity of the single wafer heat treatment apparatus and a chamber having a sufficient cooling capacity, the thermal resistance between the wafer and the wafer mounting table is There is a large variation due to a local difference in the contact state, which greatly impairs the temperature uniformity in the wafer surface.

In the process, the temperature of the internal structure other than the wafer, for example, the mounting table, the inner wall of the processing container, and the shower head for supplying gas rises. However, there is also a problem that the product adheres to the filter and the frequency of maintenance such as cleaning increases. The present invention has been devised in view of the above problems and effectively solving them. An object of the present invention is to provide a heat treatment apparatus capable of irradiating a surface of an object with high energy density light, and performing heat treatment only by raising the temperature of the surface of the object by the irradiated high energy density light. Is to do.

When the energy density increases, the effect of heating only the surface of the wafer becomes remarkable, and the time required to raise the temperature to a predetermined temperature is synergistically shortened. The minimum required energy density is 500 W / cm ² , preferably 4000 W / cm ² or more, and 30,000 W / cm ²
/ Cm ² or more. For example, 40
If the energy density is 00 W / cm ² , the wafer is 2
It can reach the melting temperature of silicon in a short time of 1 ms. In the current single-wafer heat treatment apparatus, for example, 30 W / cm
^The entire surface of the wafer is heated with an energy density of about ² ,
The aforementioned energy density is a very high value.

[0008]

The object of the present invention is to heat and heat the entire object by scanning and irradiating the surface of the object with light having an extremely high energy density at an appropriate speed. Instead, only the surface of the object to be processed is rapidly heated, and this surface is subjected to a predetermined heat treatment. Earlier, it was stated that temperature uniformity is very important for single wafer heat treatment equipment. This is because the physical properties of the object to be processed obtained by the heat treatment or the thickness of the film deposited or generated are strongly affected by the temperature at the conventional processing temperature due to other factors. This is because it is difficult to maintain the temperature around the material to be processed at a temperature that the material can withstand, for example, 1000 ° C. or higher.

On the other hand, at a high processing temperature, the physical properties of the object to be processed or the thickness of the film deposited or formed, which are obtained by the heat treatment, are not maintained for the time maintained at that temperature or adsorbed on the surface of the object to be processed. It depends on the amount of material gas used, and the effect of the reached temperature is eliminated. By scanning light with an extremely high energy density at an appropriate speed, only the surface of the object to be processed can be kept at a high temperature exceeding 1000 ° C. for a certain period of time depending on the scanning speed. The thickness and the like of the film deposited and generated can be kept constant, that is, uniform. The invention defined in claim 1 is:
In a heat treatment apparatus that heats an object to be processed placed on a mounting table in a processing container and performs a predetermined heat treatment, a light emitting source that emits light, and light from the light emitting source is applied to the surface of the object to be processed. It is configured to include a reflecting mirror means for condensing light and a scanning means for relatively scanning the condensed light on the surface of the object to be processed.

Thus, the light emitted from the light emitting source is irradiated on the surface of the object placed on the mounting table in the processing vessel in a state where the light is focused by the reflection mirror means. This irradiation light has a very high energy density and is scanned at an appropriate speed by the scanning means, so that only the surface of the object to be processed is rapidly heated without heating the entire object to be heated. By heating, this surface can be subjected to a predetermined heat treatment. Further, since the temperature of the entire object to be processed is not high, it does not take time to lower the temperature.

In this case, as a light emitting source, a point-like light spot may be formed on the surface of the object by using a lamp that forms a point-like luminescent spot that emits light. A linear light spot may be formed on the surface of the object using a lamp that forms a linear bright line to be emitted. The reflection mirror means may use a semi-elliptical reflection mirror having a semi-elliptical cross section, and a first parabolic reflection mirror which has a parabolic cross section and converts emitted light into parallel light. You may make it combine with the 2nd parabolic reflection mirror which condenses this parallel light.

In this case, if the second parabolic reflecting mirror is moved by scanning by the scanning means, it is not necessary to move the light source and the object to be processed. The reflection mirror means has an emission port and is formed to cover the first focal point and the second focal point, and has an elliptical cross section, and condenses light from the reflection mirror. For this purpose, it may be formed by a pair of bi-elliptical reflecting mirrors having an elliptical cross section. In this case, at least one of the first focus and the second focus is provided with a light emitting source.

Further, the reflecting mirror means includes a partially elliptical reflecting mirror having a section having an elliptical cross section along a light irradiation direction, and a linear section having a straight section for condensing light from the reflecting mirror. It may be formed by a reflection mirror. Further, the reflecting mirror means includes a multi-stage parabolic reflecting mirror in which a plurality of parabolic reflecting mirrors having a parabolic cross section are connected in series by inverting each other, and a parabolic cross section for condensing light from the reflecting mirror. It may be formed by a second parabolic reflection mirror having a shape. Further, the mounting table itself may be rotatable, and the scanning direction with respect to the processing target may be relatively changed. As the light emitting source as described above, a xenon discharge lamp, a metal halide discharge lamp, or the like can be used in addition to a halogen lamp having a built-in filament, for example.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a heat treatment apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a block diagram showing a first embodiment of the device of the present invention, FIG. 2 is a diagram showing the structure of a mounting table, FIG. 3 is a perspective view showing a light emitting source of the device shown in FIG. 1, and FIG. FIG. 5 is a view showing a locus of light emitted from the light emitting source, FIG. 5 is an enlarged view of the light emitting source, and FIG.

As shown in the figure, the heat treatment apparatus 2 has a processing container 4 formed into a cylindrical shape by, for example, aluminum or the like, and a sealing member 6 such as an O-ring is provided at the bottom of the processing container 4. The bottom plate 9 is provided airtight through
A ceiling plate 12 is hermetically provided on the ceiling via a sealing member 10 such as an O-ring. A mounting table 8 for mounting, for example, a semiconductor wafer W as an object to be processed is provided in the processing container 4. The mounting table 8 comprises a lower base 8A and a mounting table main body 8B installed on the lower base 8A. The base 8A is provided with two guide rails 14 laid on the bottom plate 9 (only one guide rail 14 in the illustrated example). It is slidably provided via a slide block 16 above. This sliding mechanism is not limited to this type of structure. And
A scanning arm 18 for driving, which can be bent and stretched to constitute a scanning means, is connected between the base 8A and the side wall of the processing container 4. By bending the scanning arm 18, the scanning arm 18 is bent. The entire mounting table 8 is moved so that the focal point of light can be scanned on the wafer surface.

The mounting table main body 8B is provided on the base 8A via, for example, a circular bearing 20, so that the mounting table main body 8B can be pivoted in the circumferential direction. At least the upper surface of the mounting table main body 8B is made of a light-transmitting quartz glass. Inside the mounting table main body 8B, a plurality of auxiliary heating lamps 22 for preheating made of, for example, a halogen lamp are provided as shown in FIG. As a result, the wafer W can be supplementarily heated from its back side. Each of the auxiliary heating lamps 22 is capable of individually controlling the input electric energy. Below each auxiliary heating lamp 22, there is provided a reflection mirror 24 having a cross section having a substantially elliptical shape or a curved surface shape similar to a parabolic shape, so that the radiated light from the lamp 22 can be efficiently applied to the back surface of the wafer. It has become.

In this case, the anti-slope surface of the reflection mirror 24 has a curved shape such that light rays reaching the back surface of the wafer are almost uniformly dispersed, unlike an elliptical reflection mirror or a parabolic reflection mirror which are usually used. Incidentally, a resistance heating heater may be provided instead of the auxiliary heating lamp 22, or the wafer may be heated only by a light emitting source described later without providing the auxiliary heating lamp 22 and the reflection mirror 24. You may. The bottom plate 9 of the processing container 4 includes
An exhaust port 26 connected to a vacuum exhaust system (not shown) is provided so that the inside of the processing container 4 can be evacuated. Further, a gate valve 28 which is opened and closed when a wafer W is loaded and unloaded, and the inside of the processing container 4 A gas introducing nozzle 30 for introducing a predetermined processing gas into the gas supply nozzle 30 is provided. Although not shown, lifter pins for moving the wafer W up and down for carrying the wafer are provided if necessary. Further, instead of the gas introduction nozzle 30, for example, a shower head made of quartz that transmits light may be provided.

An opening 32 having a predetermined size is formed in the ceiling plate 12 of the processing container 4. A light transmitting window 36 made of, for example, quartz is formed in the opening 32 through a sealing member 34 such as an O-ring. Are provided in an airtight manner. In order to heat only the surface of the wafer W above the light transmitting window 36, the light emitting source 38 and the reflecting mirror means 4 which are characteristic of the present invention are provided.
0 is provided. Specifically, the light emitting source 38 and the reflecting mirror means 40 are formed to have a diameter substantially equal to or slightly longer than the diameter of the wafer W as shown in FIG. Has become. The light emitting source 38 is, for example, a halogen lamp in which a linearly wound filament is provided in a linear glass tube 42 having a predetermined diameter, or a light source which is provided with electrodes at both ends in the glass tube 42 and emits light by arc discharge. , For example, a xenon lamp or a metal halide lamp.

Both the halogen lamp and the discharge lamp form a bright line 44 that emits light. The cross-sectional diameter of the bright line 44 using a filament is as large as 3 mm, for example. The diameter is as small as 0.1 to 0.3 mm, and as described later, the angle error or divergence angle at the time of condensing is reduced, and a discharge lamp is more desirable for realizing a high energy density. The reflecting mirror means 40 has a semi-elliptical reflecting mirror 46 having a substantially semi-elliptical cross section as shown in the figure, and the emission line 44 of the light emitting source 38 is located on the first focal point F1. And the second focal point F2, which is a light condensing part, is set on the wafer surface.

Next, the operation of the apparatus configured as described above will be described. First, the gate valve 28 is opened, and an unprocessed semiconductor wafer W is introduced into the processing chamber 4 by a transfer arm (not shown), and the semiconductor wafer W is mounted on the mounting table 8. After sealing the inside of the processing container 4, the inside of the processing container 4 is evacuated to maintain a predetermined process pressure, and a predetermined processing gas is introduced from the gas introduction nozzle 30. At this time, the auxiliary heating lamp 22 provided in the mounting table main body 8B has already been operated, and the light is applied to the back surface side of the wafer W to preheat it. Under such circumstances, the light emitting source 38 is operated, and at the same time, the scanning arm 18 is driven to repeatedly move, for example, the mounting table 8 along the guide rail 14 at a predetermined scanning speed.

Of the light 48 emitted from the bright line 44 in the glass tube 42, the light directed upward in FIG. 1 is reflected by the semi-elliptical reflecting mirror 46, and is reflected on the second focal point F2, that is, on the wafer surface. It is collected as a linear light spot. At this time, the condensed light has an extremely high energy density. For example, when a halogen lamp is used as a light emitting source, the energy density is about 500 W / cm ² , and when a discharge lamp is used, the energy density is about 1500 W / cm ² . For example, only the wafer surface can be rapidly heated to a heat treatment temperature of 1000 ° C. Since it is focused by a large reflecting mirror compared to the size of the light source,
The spread of the focus can be suppressed, and the energy density can be increased to a value close to the density of the light rays in the vicinity of the filament 44, which is the bright line 44 of the light emitting source 38, and the arc discharge, and the temperature of the entire wafer does not increase so much. Only the temperature can be raised instantly.

In this case, since the wafer W is scanned at a predetermined speed due to the bending and extension of the scanning arm 18 as described above, a linear light spot having a high energy density is scanned over the entire wafer surface. Therefore, a predetermined heat treatment such as annealing, film formation, impurity diffusion, oxidation, or the like can be performed on the entire surface of the wafer. In this case, if the target heat treatment is performed in one scan, the wafer may be broken. Therefore, it is preferable to increase the scanning speed and repeat scanning several times. Further, it is preferable to use a discharge lamp having a small cross-sectional diameter of the bright line 44 as the light-emitting source 38. In this case, a linear light spot having a higher energy density can be obtained than a filament lamp having a large cross-sectional diameter. .

This will be described with reference to FIGS. The upper half of FIG. 4 shows the trajectory of the light emitted from the center of the light emitting source 38 being reflected by the semi-elliptical mirror 46 and reaching the focal point F2. The lower half of the drawing shows that the light emitting source 38 has a size of 2 mm. Toward -45 degrees, -90 degrees,
It shows the result of ray tracing by extracting light in the -135 degree direction. In practice, radiation is emitted in all directions from all points on the circumference. Here, light rays having a specific angle are extracted and displayed. The emitted light beam 48 initially has a width corresponding to the size of the light source, and
, The width once decreases, and widens greatly at the focal point F2. The light ray located at the center of the light ray 48 reaches the position having a regular angle of the semi-elliptical mirror, and the focus F2
The light beam located at the end of the width of the light beam 48 has a positional error corresponding to the radius of the bright line 44. After reflection, the positional error appears as an angle shift, and the bright line 4 at the focal point F2.
A position shift larger than the radius of 4 occurs, and the light beam has a wider width.

Therefore, as shown in FIG. 6, the light spot becomes a greatly enlarged light spot on the focal point F2, which is a light condensing portion, and the energy density of light is reduced accordingly. Bright line 44
Since the cross-sectional diameter of a laser beam always has a finite value, the use of an arc discharge lamp with a very small cross-sectional diameter as a light emitting source can suppress the spread of the light spot and accordingly increase the linear light intensity with a higher energy density. A spot can be realized. As described above, in the present embodiment, the heat treatment is performed by rapidly heating only the wafer surface, so that the temperature is raised and lowered including the entire wafer and the mounting table.
The temperature can be raised and lowered in a short time, the throughput can be improved, and wasteful energy to be input to a non-wafer to be processed can be reduced.

Further, since a linear light spot does not hit the surface other than the wafer surface, for example, the product does not adhere to unintended portions such as the mounting table 8 and the side wall of the processing container 4.
Accordingly, the number of maintenance operations such as cleaning can be reduced. Further, with respect to the light transmitting window 36, the density of the light passing therethrough is lower than that of the condensing part,
Further, since the absorptance is low, the temperature of the light transmission window 36 does not rise. If the wafer W is scanned by the scanning arm 18 an appropriate number of times, only the mounting table main body 8B is rotated, for example, by 90 degrees, and scanning is performed an appropriate number of times again in this state. It can be performed uniformly.

Next, a second embodiment of the present invention will be described. FIG. 7 is a configuration diagram showing a second embodiment of the device of the present invention,
FIG. 8 is a configuration diagram showing a modification of the second embodiment shown in FIG. Note that the same parts as those in the configuration diagram shown in FIG. Further, here, the illustration of the processing container 4 side is omitted and schematically shown. Also, here, unlike the previous embodiment, the scanning means is provided outside the processing container 4.

As shown in FIG. 7, the same light source as the light source 38 of the first embodiment, that is, a lamp which forms a linear bright line is used as the light source. And the reflection mirror means 5
As 0, the first and second parabolic reflecting mirrors 52 and 54 having a parabolic cross section are used instead of the elliptical reflecting mirrors. Specifically, the light-emitting source 38 is installed on the focal point F3 of the first parabolic reflecting mirror 52, and the light 56 emitted from the light-emitting source 38 is converted into parallel light and irradiated in parallel above the light transmission window 36. I do. The second parabolic reflection mirror 54 is provided above the light transmission window 36, and reflects the parallel light downward and condenses it on the focal point F4. As a matter of course, the position of the reflection mirror 54 is adjusted so that the focal point F4 is connected to the surface of the semiconductor wafer W.

Then, the second parabolic reflection mirror 54
Is mounted on scanning means 58, and scans a linear light spot on the wafer surface by reciprocating the reflection mirror 54. Specifically, the scanning means 58 includes a ball screw 60 provided along the direction in which the parallel light comes, and a guide rail 62 provided in parallel with the ball screw. Is mounted via a slide block 64 so as to be movable along the guide rail 62. The slide block 64 is connected to a moving body 66 provided on the ball screw 60, and the ball screw 60 is driven to rotate by a scanning motor 68.

Accordingly, by driving the scanning motor 68 to rotate in the normal and reverse directions, the ball screw 60 is rotated in the normal and reverse directions, and the second parabolic reflecting mirror 46 connected to the moving body 66 is reciprocated. In the case of the present embodiment, the mounting table 8 can be swiveled, but is fixed in the horizontal direction, so that the diameter of the light transmitting window 36 is substantially equal to the diameter of the wafer W. The diameter of the processing container 4 is the first
It is smaller than the embodiment.

In the second embodiment thus constructed, the light 56 emitted from the light emitting source 38 is reflected by the first parabolic reflecting mirror 52 and is converted into parallel light.
Go horizontally. The parallel light is reflected downward by the second parabolic reflecting mirror 54, and is condensed as a linear light spot having a high energy density on the wafer surface which is the second focal point F4. Here, since the second parabolic reflecting mirror 54 is reciprocatingly scanned in the horizontal direction above the light transmitting window 36 at a predetermined speed by the scanning means 58, the linear parabolic reflecting mirror 54 is formed by being reflected by this. The light spot will scan over the wafer surface.

As a result, similarly to the first embodiment, only the wafer surface is rapidly heated and heated at a high energy density, and a predetermined heat treatment is performed. Therefore,
As in the case of the first embodiment, there is no need to raise or lower the temperature of the entire wafer or the mounting table itself, and accordingly, the throughput can be improved and the energy can be saved. Particularly, in the case of the present embodiment, the linear light spot is scanned by reciprocating the second parabolic reflection mirror 54 provided outside the container without moving the mounting table 8, so that the scanning is performed. The mechanism is simple, and the diameter of the processing container 4 can be small. In the modification shown in FIG.
A plurality of sets of parabolic reflection mirrors 52 and the light emitting sources 38 are provided in parallel in this example, and two sets of light emitting sources 38 are converged on the same second focal point F4.

Next, a third embodiment of the apparatus of the present invention will be described. FIG. 9 is a configuration diagram showing a third embodiment of the device of the present invention,
FIG. 10 is a side view of the device shown in FIG. 9, and FIG. 11 is a perspective view showing a relationship between a light emitting source and an elliptical reflecting mirror. In this embodiment, the structure of the processing container 4 is the same as that of the second embodiment shown in FIG. 7, so that the same parts are denoted by the same reference numerals and description thereof will be omitted.

As shown in the figure, a discharge lamp which is provided with electrodes at both ends of a glass tube and emits light by arc discharge, such as a xenon lamp or a metal halide lamp, is used as a light source. Further, in this embodiment, a pair of the light emitting source 38 and the reflecting mirror means 70 are provided symmetrically to the left and right in FIG. 9 to realize a linear light spot with a higher energy density. The reflecting mirror means 70 has a relatively small radiation port 72 at the tip and a first focus F
5 and the second focal point F6, the elliptical reflecting mirror 74 having an elliptical cross section and a pair of bi-ellipses having an elliptical cross section for condensing light from the reflecting mirror 74. It is mainly constituted by the reflection mirrors 76 and 78.

As shown in FIG. 11, the elliptical reflection mirror 74 is formed to have a diameter equal to or slightly longer than the diameter of the wafer W, so that the entire diameter of the wafer can be covered. The bi-elliptical reflecting mirrors 76 and 78
Are also formed long. As shown in the drawing, this elliptical reflecting mirror 74 is different from the semi-elliptical reflecting mirror 46 shown in FIG. 1, for example, except that the cross section is formed in a substantially elliptical shape except for a radiation port 72 having a slight size. As described above, not only the first focal point F5 but also the second focal point F6 is located inside the first focal point F5.

The second focal point F6 close to the radiation port 72 side
The bright line 44 of the light emitting source 38 is located above. One of the pair of bi-elliptical reflecting mirrors is arranged in the radiation direction of the elliptical reflecting mirror 74, and one focal point F7 of the reflecting mirror 76 is set to the elliptical reflecting mirror 7 above.
4, the second focal point F6. Further, the other bi-elliptical reflecting mirror 78 is provided so that the other focal point F8 of the one bi-elliptical reflecting mirror 76 matches the one focal point F9 of the other bi-elliptical reflecting mirror 78. in this case,
In the middle of the optical path between the focal point F9 and the bi-elliptical reflecting mirror 78,
A plate-like direction changing mirror 80 is provided, and the other bi-elliptical reflecting mirror 78 faces downward.

The other bi-elliptical reflecting mirror 78
Is configured so that the other focal point F10 is located on the surface of the wafer W. In FIG. 9, light from the light-emitting sources 38 provided on both sides is focused on a focus F on the wafer surface.
The light is condensed at one point on 10. The light emitting source 38 and the reflecting mirror means 70 are housed in, for example, a box-shaped casing 84 having a light passage opening 82 opened at the bottom.
Is provided. Specifically, a pair of sliding rails 88 are provided on both sides of the lower surface of the casing 84, and the sliding rails 88 are slidably attached to a fixed block 90 on the fixed side. And this casing 84 itself,
As shown in FIG. 10, a scanning motor 92 and a ball screw 94 rotated by the scanning motor 92 are slidable.

As shown in FIG. 10, on both sides of the light emitting source 38, flat diffusion preventing mirrors 96, 96 are provided so as to form side plates of the casing 84, so that light leaking to the side portions is inward. , So that the light source apparently has a length of infinity. Now, in the device configured as described above, the light emitted by the light emitting source 38 is reflected by the elliptical reflecting mirror 74 provided so as to surround the light emitting source 38, and from the emission port 72, one of the bi-elliptical reflecting mirrors 76. Head for. The light reflected by the reflection mirror 76 is condensed at the common focal points F8 and F9, passes therethrough, is reflected by the direction changing mirror 80, and travels to the other bi-elliptical reflection mirror 78. After being reflected at 78, the light is focused on the focal point F10 positioned on the surface of the semiconductor wafer W.

The linear light spot is scanned by the scanning means 8.
Driving 6 causes the wafer surface to be scanned. Here, a point that the elliptical reflecting mirror 74 having the small-diameter radiation port 72 and the bi-elliptical reflecting mirrors 76 and 78 have a very advantageous effect in forming high-energy light will be described.

First, the operation of the elliptical reflection mirror 74 will be described. In FIG. 9, all light emitted in all directions from the bright line 44 of the light emitting source 38 on the second focal point F6 is emitted from the emission port 72 with a constant divergence angle. That is, the light emitted from the emission line 44 toward the emission port 72 goes out without being reflected by the reflection mirror 74, while the other light is reflected a plurality of times by the elliptical reflection mirror 74. It turns and turns in the radiation direction, and finally goes out from the radiation port 72.

FIG. 12 (A) shows a state in which the radiated light 98 passes through the first focal point F5 and finally exits from the radiation port 72 while being reflected twice in the reflection mirror 74. 12 (B) shows the first focal point F5 and the second focal point F5 while the radiation 98 is repeatedly reflected four times in the reflection mirror 74.
6 shows a state in which the light finally goes out of the radiation port 72 through 6. It should be noted here that two or more light beams can be superimposed on the same trajectory.
That is, in FIG. 12A, the light emitted from the bright line 44 in the A direction and the B direction is finally superposed and emitted in the A direction. In FIG. 12B, the light emitted from the bright line 44 in the C direction, the D direction, and the E direction is finally superposed and emitted in the C direction.

It is easy to understand if the reflection mirror 74 and the light source are considered as one light source. All the light emitted from the light source in all directions from the emission port 72 of the reflection mirror 74 is emitted, and it can be considered as one light source device that emits only a light ray having an angle that can enter the elliptical mirror 76 in the figure.
In the ordinary optical system shown in FIG. 1, only about half of the light beam emitted from the light source is incident on the reflecting mirror, although a large reflecting mirror is used. On the other hand, in the optical system shown in FIG. 9, all the light rays emitted from the light source are collected, and there is a great difference.

Therefore, according to this, the light beams can be overlapped in a range where the light beams or the arc discharge and the light beam do not affect each other, and the energy density of the light can be increased. Also, unlike Embodiments 1 and 2 described above, light emitted in almost all directions can be emitted and used within a certain spread angle, so that the energy density of light can be increased. Light efficiency can be improved.

Next, the operation of the bi-elliptical reflecting mirrors 76 and 78 will be described. FIG. 13 is a view showing the entire optical path in the bi-elliptical reflecting mirror, FIG. 14 is an enlarged view showing the light emitted from a bright line on the focal point of one bi-elliptical reflecting mirror, and FIG. FIG. 3 is an enlarged view showing a light collecting section. Note that the direction changing mirror 80 in FIG.
Are bent to lay out the elliptical mirrors 76 and 78 at positions facing the wafer W. Here, the description of the direction changing mirror is omitted for simplification of description. In FIG. 13, the cross-sectional diameter of the bright line 44 on the focal point 7 is 2 mm, and -45 degrees and -90 toward the focal point F10.
It shows the results of ray tracing for rays in the direction of -145 degrees. Radiation is emitted in all directions from all points on the circumference of the light source having a finite size.Since light rays having a specific angle are extracted and displayed, as shown in FIG. It looks like a luminous flux with a width.

The light emitted from the light source is reflected by an elliptical reflection mirror 7.
Although the light is reflected at 6 and its spread is once increased, the light is reflected by the elliptical reflecting mirror 78 and reaches the focal point F10 at a position within the diameter of the original light source. This is because the error caused by receiving two reflections with a similar mirror is canceled. As is clear from the comparison with the case shown in FIG. 6, in this embodiment, the spread at the focal point is very small, and it can be said that the spread at the focal point can be reduced to the limit.

Accordingly, the bi-elliptical reflecting mirrors 76 and 78
Thus, a linear light spot having an extremely high energy density can be obtained by the action of the elliptical reflection mirror 74 described above. As a result, since only the wafer surface can be heated and heated more quickly, the throughput can be further improved. Furthermore, since the temperature of the wafer surface can be increased accordingly, a higher temperature, for example, 1400
High-temperature heat treatment at about ° C can also be performed. Here, since the light emitted from the similar second focal point F7 is also added to the first focal point F5 of the elliptical reflecting mirror 74, the light emitting source 38 is used.
May be provided, in which case the second focal point F7
Since the light is added to the light emitted from F, a linear light spot with a higher energy density can be realized.

However, in this case, a lamp having a filament such as a halogen lamp as a light source cannot be used because the light reflected by the elliptical reflecting mirror 74 is blocked. As the light emitting source 38, only a discharge lamp having a small cross-sectional diameter of the bright line 44, for example, a xenon lamp or a metal halide lamp can be used.
A linear light spot with a higher energy density can be realized by the superimposition of the light beams and the expansion at the focal point being minimized by the bi-elliptical optical system.

Next, a fourth embodiment of the present invention will be described. FIG. 16 is a configuration diagram showing a fourth embodiment of the device of the present invention. This embodiment is a modified example of the second embodiment. Two sets of the second embodiment shown in FIG. 8 are arranged symmetrically, the scanning means is shared, and a line is formed on the surface of the same object. The elliptical reflection mirror 74 of the third embodiment is used as a light source.
And six pairs of light emitting sources 38 provided therein, and a parabolic reflection mirror for converting light from the light source into parallel light is added.

A first parabolic reflecting mirror 100 having a parabolic cross section in which the focal point F11 is located at the same position as the second focal point F6 of the elliptical reflecting mirror 74 is provided in front of the radiation port 72 of the elliptical reflecting mirror 74. The light coming from the elliptical reflection mirror 74 is reflected in the horizontal direction and converted into parallel light. In addition, above the light transmission window 36,
As in the case of the second embodiment shown in FIG. 7, a second parabolic reflecting mirror 102 having a parabolic cross section is provided, and the focal point F12 of the reflecting mirror 102 is located on the surface of the wafer W. It is set to be located.

Here, since the parallel light is directed toward the center from both the left and right sides in the figure, the reflection mirrors 102 are joined to each other in the reflection direction and converge on the common focal point F12. I have. The second parabolic reflecting mirror 102 is provided with a scanning unit 58 similar to that shown in FIG.
With this, it is possible to move in the horizontal direction. That is, the scanning means 58 has a ball screw 60 rotated by a scanning motor 68, a guide rail 62, and a slide block 64 for holding the second parabolic reflection mirror 102 and slidably supporting the guide rail 62. doing. Further, on the side of the first parabolic reflection mirror 100, a plate-shaped diffusion prevention mirror 106 for preventing light leakage to the side is provided.

Now, in the example of the apparatus configured as described above,
The light emitted from each light source 38 is reflected by an elliptical reflection mirror 74.
After being reflected by the radiation port 72, the light is reflected by the first parabolic reflection mirror 100, converted into parallel light, and travels in the horizontal direction. This parallel light is reflected downward by the second parabolic reflecting mirror 102 which is further horizontally scanned and condensed on the focal point F12 on the wafer surface. Since all the lights from the six light emitting sources 38 are condensed on the common focal point F12, a linear light spot having an extremely high energy density can be realized.

Accordingly, only the wafer surface can be heated more rapidly, and a predetermined heat treatment can be performed. As described above, the temperature can be raised and lowered more quickly, so that the throughput can be further improved and the energy can be saved. Further, in the case of this embodiment, the scanning of the linear light spot is performed by moving the second parabolic reflection mirror 102 without moving the light emitting source 38 as in the case of the second embodiment shown in FIG. Can be performed, the object to be scanned is light, the structure of the scanning means 58 is simple, and
There is no inconvenience caused by the movement of the light emitting source 38.

Next, a fifth embodiment of the apparatus of the present invention will be described. FIG. 17 is a block diagram showing a fifth embodiment of the device of the present invention. This embodiment uses a second parabolic reflecting mirror 102.
Since the configuration of the scanning means 58 is completely the same as that of the fourth embodiment shown in FIG. 16, the same reference numerals are given here and the description thereof will be omitted. Here, the point different from the fourth embodiment is that multi-stage parabolic reflecting mirrors 108 and 110 formed by connecting reflecting mirrors having parabolic cross sections in multiple stages to form parallel light are used. In the illustrated example, the left side shows a case where two parabolic reflecting mirrors are connected, and the right side shows a case where four parabolic reflecting mirrors are connected. Actually, light sources having the same structure on the left and right are used, but here, light sources having different structures on the left and right are described for convenience.

In the figure, a multi-stage parabolic reflecting mirror 1 shown on the left side
In the case of 10, two parabolic reflecting mirrors 112 and 114 having a parabolic cross section are inverted and joined in the opposite direction. In this case, one, that is, the position of the focal point F13 of the reflection mirror 112 located in front, and the other,
That is, the focal point F14 of the reflection mirror 114 located on the rear side
So that the positions of the reflection mirrors 112 and 114 are the same.
Are connected in series. Then, the light emitting source 38 is located on the focal points F13 and F14. Then, one end of the front reflection mirror 112 is opened to form a radiation port 116,
It emits light from this.

On the other hand, behind the rear reflecting mirror 114, a flat rear flat reflecting mirror 118 is provided so as to be orthogonal to the radiation direction. The position of the reflection mirror 118 is not particularly limited. Further, in front of (in the figure, below) the radiation port 116, a plate-like direction changing mirror 120 inclined at approximately 45 degrees is provided to change the traveling direction of parallel light emitted downward by 90 degrees. To travel in the horizontal direction to condense light. Then, the focuses F13, F14
The light emitting source 38 is located thereon. Such a multi-stage parabolic reflecting mirror 110 is easily formed by dividing a block body 122 made of, for example, aluminum, hollowing out the inside, applying gold plating to the inner surface, or attaching and assembling such a method as vapor deposition of mercury. can do.

Further, above and below the block body 122,
A cooling port 124 is provided, and the inside is cooled by, for example, flowing and flowing cooling air through the cooling port 124. On the other hand, in the figure, the multi-stage parabolic reflection mirror 108 on the right side is
In the configuration of No. 0, a pair of two parabolic reflection mirrors 117 and 119 having a parabolic section are inverted and connected in series, and further connected in series. And
A second light emitting source 38 is provided at a common focal point F15, F16 of both mirrors 117, 119. The other configuration is the same as that of the multi-stage parabolic reflection mirror 110 on the left side.

Now, in such a configuration, as shown in the figure, of the light 121 emitted from the light emitting source 38, the light emitted forward (downward) is a parabolic reflection located ahead (downward). Mirror 112, or 117, 114,
The light is reflected at 112 and becomes parallel light, and the direction is further changed by 90 degrees by the direction conversion mirror 120, and the second light is kept as parallel light.
Is emitted toward the parabolic reflection mirror 102 side. Further, the light emitted backward (upward) from the light emitting source 38 is reflected by the reflecting mirror 114 or 114,
After being reflected at 117 and 119, the light is reflected forward (downward) by the rear flat-plate reflecting mirror 119. Then, after being reflected by all the reflecting mirrors, the direction is changed by 90 degrees by the direction changing mirror 120 in the same manner as described above, and the parallel light is emitted toward the second parabolic reflecting mirror 102 as parallel light.

As a result, light is superimposed on the same locus, so that a light beam having a very high energy density can be obtained. In the figure, in the case of the multi-stage parabolic reflecting mirror 108 on the right side, the light emitted forward (downward) from the lower light source 30, the light emitted backward (upper) also from the upper light source 30, The light radiated downward and the light radiated backward (upward) also travel along the same trajectory, become parallel light, and enter the parabolic reflecting mirror 102,
Finally, a linear spot is formed on the wafer surface. Although the light from the light source shown in the third embodiment is also superimposed on the same trajectory, the range is the light from the same light source. In the fifth embodiment shown in FIG. 17, the light from a plurality of light sources is the same. , And a higher degree of superposition can be realized. Therefore, also in the case of this embodiment, a linear spot having a very high energy density can be formed on the wafer surface, and the desired heat treatment can be performed quickly by rapidly raising the temperature of only the wafer surface. , The throughput can be greatly improved and energy can be saved.

Next, a sixth embodiment of the present invention will be described. 18 is a block diagram showing a sixth embodiment of the apparatus of the present invention, FIG. 19 is a top view of the apparatus shown in FIG. 18, and FIG.
8 is a schematic perspective view showing the light emitting source and the reflecting mirror means of the device shown in FIG. 8, and FIG. 21 is an explanatory diagram for explaining the relationship between the light emitting source and the reflecting mirror means. Until now, the embodiment has been described by taking as an example the case where a lamp that generates a relatively elongated linear bright line by arc discharge or filament is used as an example, but the present invention is not limited to this. The present invention can also be applied to a case where a lamp that generates bright spots is used. The present invention can also be applied to a case where a lamp that generates point-like luminescent spots is used as a light source. A lamp that generates a point-like luminescent spot as a light source,
That is, when a point light source is used, a two-dimensional scanning unit capable of scanning the obtained spot on the wafer surface over the entire area within the wafer surface, for example, a scanning unit such as an XY stage is used.

As shown in FIG. 18, here, the light source 12
As 2, for example, a halogen lamp or a xenon lamp that generates a point-like luminescent spot 124 is used. Light emitting source 1
Reflecting mirror means 124 for condensing the light emitted from 22
Is not a reflecting mirror whose normal cross section is an elliptical shape, but a partial elliptical reflecting mirror 126 whose cross section along the light irradiation direction is an elliptical portion, and a cross section for condensing light from the mirror 126 is a linear shape. It is composed of a linear reflecting mirror 128, which makes it possible to converge a large amount of light at one point on the focal point by suppressing the spread angle of the reflected light as described later.

More specifically, the reflection mirror means 124
Is the same as the reflection mirror disclosed in Japanese Patent Application No. 9-143294 previously disclosed by the present inventors. That is,
As shown in FIG. 20 and FIG.
6 is formed in, for example, a dome shape so that the cross section in the light irradiation direction becomes an elliptical portion, and a circular radiation port 130 having a relatively small diameter is provided at the tip thereof.

On the other hand, the linear reflecting mirror 128
Is formed in a so-called umbrella shape so that the whole constitutes a part of the rotating cone so that the cross section in the light irradiation direction is linear. The light emitting source 122 is arranged on the focal point F15 of the partial elliptical arc of the partial elliptical reflecting mirror 126. Therefore, the light emitted from the light emitting source 122 is reflected by the partial elliptical reflecting mirror 126,
The light is directed toward the rear linear reflecting mirror 128, further reflected there, then emitted forward from the radiation port 130, and condensed at the converging point 132. The points to note here are the parts of the ellipse located at the top and bottom in FIG.
That is, the upper elliptical arc 126A and the lower elliptical arc 126B do not form a part of one continuous ellipse. That is, one focal point of the ellipse forming the upper elliptical arc 126A is located at F15 and the lower elliptical arc 126B
Is located at the same point as one focal point of
Are located below the center line 134.

One of the focal points of the ellipse forming the lower elliptical arc 126B is located at the point F15, while the other focal point is at the point F15.
17 is located above the center line 134,
Is a symmetric axis with respect to the focal point F16. The inclination angle θ1 of the linear reflecting mirror 128 with respect to the center line 134 is determined by the respective elliptical arcs 126A, 126A.
The position of the virtual image whose axis of symmetry is the cross-section straight line of the linear reflecting mirror 128 on the corresponding side of the other focal points F16 and F17 of 26B is set so as to be located at the converging point 132 which is the same point. In FIG. 21, one cross section passing through the center line 134 has been described. However, the above-mentioned relationship is established for all cut surfaces cut along the center line 134 from an arbitrary direction.

FIG. 19 shows a scanning means 136 for scanning the light emitting source 122 and the reflecting mirror means 124 integrally. This scanning means 136 has a large opening 1 at the center.
It is provided on a fixed base 138 having 36. Specifically, the scanning unit 136 includes a Y scanning mechanism 140 and an X scanning mechanism 142. The Y scanning mechanism 140 includes two Y direction guides 144 provided on the fixed base 138 in parallel along the Y direction. And a Y ball screw 146 provided in parallel with this, and a Y sliding body 148 slidably provided on the Y direction guide 144.
6 is connected to the Y sliding body 148,
By driving the Y motor 150 of the ball screw 146 to rotate forward and backward, the Y sliding body 148 can slide on the Y direction guide 144 in the Y direction.

Further, the X scanning mechanism 142 is adapted to
Two X-direction guides 15 spanned between the slides 148
2 and an X ball screw 154 provided in parallel with this,
X sliding body 1 slidably provided on the X direction guide 152
56, and the moving body 1 of the X ball screw 154
54A is connected to the X moving body 156, and the X motor 158 of the X ball screw 154 is driven to rotate forward and reverse, thereby moving the X sliding body 156 on the X direction guide 152.
It can slide in the direction. The light emitting source 122 and the reflecting mirror 12 are attached to the X sliding body 156.
4 are integrally attached and fixed, and can be scanned in a horizontal plane, that is, in the X and Y directions.

In such a configuration, as shown in the figure, light emitted from the light emitting source 122 is first reflected by a partial elliptical reflecting mirror 126 provided in front, and then reflected by a linear reflecting mirror in the rear. The light is reflected to the front again at 126, and thereafter is condensed at the light condensing point 132 through the radiation port 130. This focal point 132 is
Naturally, it is set on the surface of the wafer W,
The surface of the wafer W is heated as in the case of the previous embodiment. As is clear from FIG. 21, the light condensed at the light condensing point 132 is light that is emitted from the light emitting source 122 over a wide angle range, and is particularly directed forward from the light emitting source 122. Of the light, except for the light directed to the radiation port 130, the light is effectively collected and used, and the use efficiency of the emitted light can be increased. Although the light traveling backward from the light emitting source 122 is not described, the light on the back side of the light emitting source is usually a shadow of the light source itself, and the light in this portion also has a large condensing error. Can not.

By appropriately driving the X scanning mechanism 142 and the Y scanning mechanism 140 of the scanning means shown in FIG.
The light emitting source 122 and the reflecting mirror means 124 are integrated with X
The scanning movement can be performed in the direction and the Y direction, and therefore, the entire surface of the wafer W can be scanned. As described above, also in this embodiment, a spot-like spot having a very high energy density can be formed on the wafer surface by effectively using the radiated light, and the spot can be scanned in the X and Y directions. In addition, a desired heat treatment can be quickly performed by rapidly raising the temperature of only the wafer surface. In addition, since only the wafer surface is heated and not the entire wafer, the temperature can be lowered quickly, so that the throughput can be greatly improved and energy can be saved.

Further, in this embodiment, the case where light is condensed at one point from a light emitting source forming a point-like bright spot has been described as an example. Instead, a short linear spot is formed at the focal point. Can also. The superposition of spots when scanning by two-dimensional scanning means is easier than in the case of two-dimensional scanning with point-like spots.

The reflecting mirror means shown in each of the above embodiments is merely an example, and may have any configuration as long as it can form a spot having a high energy density. It can also be realized by combining the optical system for realizing the superposition of the light beams shown in the embodiment or the fifth embodiment. In addition, as the heat treatment, an annealing process, a film forming process, an oxidation process, a diffusion process, or the like can be performed. Further, the object to be processed is not limited to a semiconductor wafer, and the present invention can be applied to a glass substrate, an LCD substrate, and the like.

[0070]

As described above, according to the heat treatment apparatus of the present invention, the following excellent functions and effects can be exhibited. According to the present invention, since the light emitted from the light emitting source is scanned while being condensed by the reflecting mirror means on the surface of the object to be processed placed in the processing container, the light spot having a high energy density is scanned. Is formed, and only the surface of the object to be processed, not the entire object, is rapidly heated to be subjected to a predetermined heat treatment. Therefore, the temperature of the surface of the object to be processed can be quickly raised and lowered, and accordingly, the throughput can be improved and the energy can be saved.

Further, since a predetermined heat treatment can be performed only on the surface portion of the object to be processed, for example, a film is not adhered to an unintended portion, for example, a mounting table or an inner wall of a processing container. Therefore, the frequency of maintenance work such as cleaning can be reduced. Further, when the light emitting source is fixed and a part of the reflecting mirror means is scanned, the scanning means can be simplified and the light emitting source does not need to be moved, so that an unnecessary burden is imposed on the light emitting source. And the life can be extended. Further, by using an elliptical reflecting mirror having a small radiation opening covering the first focal point and the second focal point as a part of the reflecting mirror means,
The use efficiency of the reflected light from the light emitting source can be increased, and light with a higher energy density can be collected.

Further, as a part of the reflecting mirror means, a partial elliptical reflecting mirror having a section having an elliptical cross section along the light irradiation direction or a plurality of parabolic reflecting mirrors having a parabolic cross section are serially inverted from each other. By using a connected multi-stage parabolic reflecting mirror, the light emitted from the light source can be used more efficiently, and the light with a higher energy density can be condensed to improve the throughput. Can save energy.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a first embodiment of the device of the present invention.

FIG. 2 is a diagram showing a structure of a mounting table.

FIG. 3 is a perspective view showing a light emitting source of the device shown in FIG.

FIG. 4 is a diagram showing a locus of light emitted from the light emitting source shown in FIG. 3;

FIG. 5 is an enlarged view of a light emitting source.

FIG. 6 is an enlarged view showing a light collecting unit.

FIG. 7 is a configuration diagram showing a second embodiment of the device of the present invention.

FIG. 8 is a configuration diagram showing a modification of the second embodiment shown in FIG. 7;

FIG. 9 is a configuration diagram showing a third embodiment of the device of the present invention.

FIG. 10 is a side view of the device shown in FIG. 9;

FIG. 11 is a perspective view illustrating a relationship between a light emitting source and an elliptical reflecting mirror.

FIG. 12 is an explanatory diagram for explaining a trajectory of a light ray in an elliptical reflecting mirror.

FIG. 13 is a diagram illustrating an entire optical path in a bi-elliptical reflection mirror.

FIG. 14 is an enlarged view showing radiation light from a bright line at the focal point of one bi-elliptical reflection mirror.

FIG. 15 is an enlarged view showing a condensing portion on the focal point of the other bi-elliptical reflecting mirror.

FIG. 16 is a configuration diagram showing a fourth embodiment of the device of the present invention.

FIG. 17 is a configuration diagram showing a fifth embodiment of the device of the present invention.

FIG. 18 is a configuration diagram showing a sixth embodiment of the device of the present invention.

19 is a top view of the device shown in FIG.

20 is a schematic perspective view showing a light emitting source and a reflecting mirror means of the device shown in FIG.

FIG. 21 is an explanatory diagram for explaining a relationship between a light emitting source and a reflecting mirror unit.

[Explanation of symbols]

 Reference Signs List 2 heat treatment apparatus 4 processing vessel 8 mounting table 14 guide rail 16 slide block 18 scanning arm 36 light transmitting window 38 light emitting source 40 reflecting mirror means 44 bright line 46 semi-elliptical reflecting mirror 50 reflecting mirror means 52 first parabolic reflecting mirror 54 second Parabolic reflecting mirror 58 scanning means 70 reflecting mirror means 72 radiation port 74 elliptical reflecting mirror 76, 78 bi-elliptical reflecting mirror 86 scanning means 88 sliding rail 100 first parabolic reflecting mirror 102 second parabolic reflecting mirror 104 scanning means 108 , 110 Multi-stage parabolic reflecting mirror 112, 114 Parabolic reflecting mirror 118 Rear flat plate reflecting mirror 117, 119 Parabolic reflecting mirror 122 Light emitting source 124 Reflecting mirror means 126 Partial elliptical reflecting mirror 128 Linear reflecting mirror 140 Y scanning mechanism 142 X scanner Structure 144 Y-direction guide 152 X-direction guide W Semiconductor wafer (workpiece)

Claims (15)

[Claims] In a heat treatment apparatus for performing a predetermined heat treatment by heating an object mounted on a mounting table in a processing container, a light emitting source for emitting light, and light from the light emitting source is applied to the object. A heat treatment apparatus comprising: a reflection mirror unit that condenses light on a surface of a processing object; and a scanning unit that relatively scans the condensed light on the surface of the processing object. 2. The method according to claim 1, wherein the light emitting source forms a point-like luminescent spot that emits light, and the reflection mirror unit condenses the light as a point-like light spot on the surface of the object to be processed. The heat treatment apparatus according to claim 1, wherein the heat treatment is performed. 3. The light-emitting source forms a linear bright line that emits light, and the reflection mirror condenses the light as a linear light spot on the surface of the object to be processed. 2. The heat treatment apparatus according to 1. 4. The heat treatment apparatus according to claim 1, wherein said reflecting mirror means is a semi-elliptical reflecting mirror having a semi-elliptical cross section. 5. The reflecting mirror means includes: a first parabolic reflecting mirror having a parabolic cross section and converting light from the light emitting source into parallel light; The heat treatment apparatus according to any one of claims 1 to 3, further comprising a second parabolic reflection mirror having a parabolic cross section for collecting on the surface of the second parabolic mirror. 6. The heat treatment apparatus according to claim 5, wherein said scanning means scans and moves said second parabolic reflection mirror. 7. An elliptical reflecting mirror having an elliptical cross section formed so as to cover a first focal point and a second focal point with a relatively small radiating opening and having a comparatively small radiation port. And a pair of bi-elliptical reflecting mirrors each having an elliptical cross section in order to focus the light on the surface of the object to be processed. The light emitting source includes at least one of the first focus and the second focus. The heat treatment apparatus according to claim 1, wherein the heat treatment apparatus is provided on any one of the heat treatment apparatuses. 8. The reflecting mirror means includes an elliptical reflecting mirror having a relatively small emission port and having an elliptical cross section formed so as to cover the first focal point and the second focal point. A first parabolic reflecting mirror having a parabolic cross section for converting the light into parallel light, and a second parabolic having a parabolic cross section for collecting light from the reflecting mirror on the surface of the object to be processed 4. The heat treatment apparatus according to claim 1, comprising a reflection mirror. 9. The heat treatment apparatus according to claim 8, wherein said scanning means scans and moves said second parabolic reflection mirror. 10. The reflection mirror means includes: a partially elliptical reflection mirror having a section having an elliptical cross section along a light irradiation direction; and a linear section having a straight section for condensing light from the reflection mirror. 4. The heat treatment apparatus according to claim 1, comprising a reflection mirror. 11. A multi-stage parabolic reflecting mirror comprising a plurality of parabolic reflecting mirrors each having a parabolic cross section inverted and connected in series with each other, and transmitting light from the reflecting mirror to the object to be processed. 4. A multi-parabolic reflector according to claim 1, further comprising a second parabolic reflecting mirror having a parabolic cross section for collecting on the surface, wherein the light emitting source is located at a focal point of the multi-stage parabolic reflecting mirror. The heat treatment apparatus according to any one of the above. 12. The apparatus according to claim 11, wherein said scanning means scans and moves said second parabolic reflecting mirror.
The heat treatment apparatus according to the above. 13. The heat treatment apparatus according to claim 1, wherein the light emitting source is a discharge lamp. 14. The heat treatment apparatus according to claim 1, wherein the light emitting source is a lamp having a built-in filament. 15. The heat treatment apparatus according to claim 1, wherein the mounting table is rotatable.