JP5501459B2 - 拡散板を選択的に挿入設置する基板処理装置及び基板処理方法 - Google Patents
拡散板を選択的に挿入設置する基板処理装置及び基板処理方法 Download PDFInfo
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- 238000009792 diffusion process Methods 0.000 title claims description 158
- 239000000758 substrate Substances 0.000 title claims description 53
- 238000003672 processing method Methods 0.000 title claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 30
- 238000002347 injection Methods 0.000 claims description 24
- 239000007924 injection Substances 0.000 claims description 24
- 238000005192 partition Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 17
- 238000000638 solvent extraction Methods 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (11)
- 上部が開放された下部チェンバーと、
前記下部チェンバーの上部を開閉し、前記下部チェンバーと共に基板に対する工程が行われる内部空間を形成する上部チェンバーと、
前記上部チェンバーの下部に設置され、前記上部チェンバーとの間にバッファ空間が形成され、前記内部空間に向かって反応ガスを供給する噴射孔を備えたシャワーヘッドと、
前記上部チェンバーに形成され前記バッファ空間に向かって反応ガスを供給するガス供給ポートと、
前記バッファ空間内に設置され、前記ガス供給ポートを介して供給された前記反応ガスを拡散させる拡散ユニットと、を含み、
前記拡散ユニットは、前記バッファ空間を前記反応ガスが拡散される相互遮断された複数の拡散区域及び前記ガス供給ポートと前記拡散区域を各々連通する複数の拡散孔、そして前記拡散区域と対応される形状を有して前記拡散区域に選択的に挿入設置される複数の接続孔が前記噴射孔と一致連通するように形成される一つ以上の拡散板を備え、
前記拡散区域の中で第1拡散区域に挿入された前記拡散板の数と前記拡散区域の中で第2拡散区域に挿入された前記拡散板の数は互いに違うことを特徴とする基板処理装置。 - 前記拡散ユニットは、前記シャワーヘッドの一面とほぼ平行に前記シャワーヘッドの一面から離隔され設置され、前記拡散孔が形成されるブロックプレートと、前記シャワーヘッドに形成される噴射孔と対向される前記ブロックプレートの一面から突出され前記ブロックプレートと前記シャワーヘッドの一面の間の離隔された空間を前記拡散区域に区分けする隔壁と、を含むことを特徴とする請求項1に記載の基板処理装置。
- 前記拡散区域は、中央区域と、前記中央区域の縁に配置される複数の第1区域と、前記第1区域の縁に配置される複数の第2区域と、を含むことを特徴とする請求項1に記載の基板処理装置。
- 前記基板処理装置は、前記シャワーヘッドの下部に位置し前記基板が上部に置かれる支持プレートをさらに含み、
一つ以上の前記拡散板は、前記拡散区域に各々対応される前記基板領域の工程率に従って挿入設置されることを特徴とする請求項1に記載の基板処理装置。 - 複数の前記拡散板が前記拡散区域に積層され設置されることを特徴とする請求項1記載の基板処理装置。
- 基板に対する工程が行われる内部空間を提供するチャンバーと、
前記内部空間に設置されガス供給ポート供給される反応ガスを拡散させるバッファ空間及び前記内部空間に向かって前記バッファ空間内の反応ガスを供給する噴射孔をそなえたシャワーヘッドと、
前記バッファ空間内に設置され、前記反応ガスを拡散させる拡散ユニットと、を含み、
前記拡散ユニットは、前記反応ガスが拡散される相互遮断された複数の拡散区域及び前記拡散区域と対応される形状を有して前記拡散区域に選択的に挿入設置される複数の接続孔が前記噴射孔と一致連通するように形成される一つ以上の拡散板を備え、
前記拡散区域の中で第1拡散区域に挿入された前記拡散板の数と前記拡散区域の中で第2拡散区域に挿入された前記拡散板の数は互いに違うことを特徴とする基板処理装置。 - 前記基板処理装置は、前記基板が上部に置かれる支持プレートをさらに含み、一つ以上の前記拡散板は前記拡散区域に各々対応される前記基板領域の工程率に従って挿入設置されることを特徴とする請求項6に記載の基板処理装置。
- 複数の前記拡散板が前記拡散区域に積層され設置されることを特徴とする請求項6に記載の基板処理装置。
- 前記拡散区域は、前記基板とほぼ平行に配置されることを特徴とする請求項6に記載の基板処理装置。
- チェンバーの内部空間に設置され外部から供給される反応ガスが拡散されるバッファ空間及び前記内部空間に向かって前記バッファ空間内の反応ガスを供給する噴射孔を備えたシャワーヘッドを用いて基板処理する方法において、
前記バッファ空間を前記反応ガスが拡散される相互遮断された複数の拡散区域に区分け、前記バッファ空間と前記拡散区域とを連通させ、
前記拡散区域と対応した形状を有して複数の接続孔が前記噴射孔と一致連通するように形成された拡散板を前記拡散区域の中で第1拡散区域と第2拡散区域の数を異なるように挿入して前記基板に対する工程率を調節することを特徴とする基板処理方法。 - 前記拡散区域は、前記基板とほぼ平行に配置されることを特徴とする請求項10に記載の基板処理方法。
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KR1020090062066A KR101110080B1 (ko) | 2009-07-08 | 2009-07-08 | 확산판을 선택적으로 삽입설치하는 기판처리방법 |
KR10-2009-0062066 | 2009-07-08 | ||
PCT/KR2010/004338 WO2011004987A2 (ko) | 2009-07-08 | 2010-07-02 | 확산판을 선택적으로 삽입설치하는 기판처리장치 및 기판처리방법 |
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JP (1) | JP5501459B2 (ja) |
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