JP6575641B1 - シャワーヘッドおよび処理装置 - Google Patents
シャワーヘッドおよび処理装置 Download PDFInfo
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- JP6575641B1 JP6575641B1 JP2018122566A JP2018122566A JP6575641B1 JP 6575641 B1 JP6575641 B1 JP 6575641B1 JP 2018122566 A JP2018122566 A JP 2018122566A JP 2018122566 A JP2018122566 A JP 2018122566A JP 6575641 B1 JP6575641 B1 JP 6575641B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Abstract
Description
被処理体に対向する側に多数のガス噴出穴を有し、前記被処理体に対してガスを供給するシャワーヘッドであって、
前記シャワーヘッドの前記被処理体に対向する面に、前記ガスが噴き出さない領域を、前記シャワーヘッドの外周部から前記シャワーヘッドの中心部に延びるように複数備え、
前記ガスが噴き出さない領域に挟まれた領域に、前記ガス噴出穴が形成された、ことを特徴としている。
前記ガスは、異なる種類の複数のガスであり、
前記シャワーヘッドの前記被処理体に対向する側に、異なる種類のガスをそれぞれ供給するガス噴出穴が備えられた、ことを特徴としている。
前記シャワーヘッドの前記被処理体に対向する側に、前記シャワーヘッドの外側から前記シャワーヘッドの中心部に延びる排気方向制御板が立設された、ことを特徴としている。
前記シャワーヘッドは、前記被処理体に対向する側に、前記シャワーヘッドの外周に沿って立設する排気特性制御板を備える、ことを特徴としている。
被処理体が配置される処理チャンバと、
前記処理チャンバに備えられ、前記被処理体が載置されるステージと、
前記ステージ上に載置された前記被処理体と対向して備えられ、前記被処理体に対してガスを供給するシャワーヘッドと、を備え、
前記シャワーヘッドの前記被処理体と対向する面には、前記ガスが噴き出さない領域が、前記シャワーヘッドの外周部から前記シャワーヘッドの中心部に延びるように複数備えられ、
前記ガスが噴き出さない領域に挟まれた領域に、前記ガスが噴き出すガス噴出穴が複数形成された、ことを特徴としている。
前記ガスは、異なる種類の複数のガスであり、
前記シャワーヘッドの前記被処理体に対向する側に、異なる種類のガスをそれぞれ供給するガス噴出穴が備えられた、ことを特徴としている。
前記シャワーヘッドの前記被処理体に対向する側に、前記シャワーヘッドの外側から前記シャワーヘッドの中心部に延びる排気方向制御板が立設された、ことを特徴としている。
前記シャワーヘッドまたは前記処理チャンバに、前記シャワーヘッドの外周に沿って立設する排気特性制御板を備えた、ことを特徴としている。
前記シャワーヘッドは、前記被処理体と向かい合う側の面が円形であり、
前記処理チャンバには、前記ガスが排出されるスリットが形成された板が、前記シャワーヘッドの外周に沿って、前記被処理体の側面と向かい合うように、備えられ、
前記スリットが形成された板は、前記シャワーヘッドの前記被処理体と向かい合う側の面の中心を軸として回転可能に支持された、ことを特徴としている。
1a…ガス噴出穴、1b…排出ガス流路部(ガスが噴き出さない領域)
2、10、13、16、18、22、23、26…オゾン処理装置(処理装置)
3…ウェハ(被処理体)
4…処理チャンバ
5…回転導入機
6…回転ステージ
7、11…ガス供給口
8…排気口
9…シャワーヘッド
9a…第1シャワーヘッド、9b…第2シャワーヘッド
9c…ガス噴出穴
9d、9g…排出ガス流路部(ガスが噴き出さない領域)
9e…第1ガス噴出穴、9f…第2ガス噴出穴、9h…突出部
12、15、17、21…シャワーヘッド
14…排気方向制御板
19…排気特性制御板、19a…壁部
20…空間部
24…回転スリット、24a…壁部、24b…スリット
25…2軸の回転導入機
Claims (7)
- 被処理体に対向する側に多数のガス噴出穴を有し、前記被処理体に対してガスを供給するシャワーヘッドであって、
前記シャワーヘッドの前記被処理体に対向する面に、前記ガスが噴き出さない領域を、当該シャワーヘッドの外周部から当該シャワーヘッドの中心部に延びるように複数備え、
前記ガスが噴き出さない領域に挟まれた領域に、前記ガス噴出穴が形成され、
前記シャワーヘッドの前記被処理体に対向する側に、当該シャワーヘッドの中心部から当該シャワーヘッドの外周部に延びる排気方向制御板が立設され、
前記排気方向制御板は、前記シャワーヘッドの周方向に隣接する排出ガス流路部間に設けられた、ことを特徴とするシャワーヘッド。 - 前記ガスは、異なる種類の複数のガスであり、
前記シャワーヘッドの前記被処理体に対向する側に、異なる種類のガスをそれぞれ供給するガス噴出穴が備えられた、ことを特徴とする請求項1に記載のシャワーヘッド。 - 前記シャワーヘッドは、前記被処理体に対向する側に、当該シャワーヘッドの外周に沿って立設する排気特性制御板を備える、ことを特徴とする請求項1または請求項2に記載のシャワーヘッド。
- 被処理体が配置される処理チャンバと、
前記処理チャンバに備えられ、前記被処理体が載置されるステージと、
前記ステージ上に載置された前記被処理体と対向して備えられ、前記被処理体に対してガスを供給するシャワーヘッドと、を備え、
前記シャワーヘッドの前記被処理体と対向する面には、前記ガスが噴き出さない領域が、当該シャワーヘッドの外周部から当該シャワーヘッドの中心部に延びるように複数備えられ、
前記ガスが噴き出さない領域に挟まれた領域に、前記ガスが噴き出すガス噴出穴が複数形成され、
前記シャワーヘッドの前記被処理体に対向する側に、当該シャワーヘッドの中心部から当該シャワーヘッドの外周部に延びる排気方向制御板が立設され、
前記排気方向制御板は、前記シャワーヘッドの周方向に隣接する排出ガス流路部間に設けられた、ことを特徴とする処理装置。 - 前記ガスは、異なる種類の複数のガスであり、
前記シャワーヘッドの前記被処理体に対向する側に、異なる種類のガスをそれぞれ供給するガス噴出穴が備えられた、ことを特徴とする請求項4に記載の処理装置。 - 前記シャワーヘッドまたは前記処理チャンバに、当該シャワーヘッドの外周に沿って立設する排気特性制御板を備えた、ことを特徴とする請求項4または請求項5に記載の処理装置。
- 前記シャワーヘッドは、前記被処理体と向かい合う側の面が円形であり、
前記処理チャンバには、前記ガスが排出されるスリットが形成された板が、前記シャワーヘッドの外周に沿って、前記被処理体の側面と向かい合うように、備えられ、
前記スリットが形成された板は、前記シャワーヘッドの前記被処理体と向かい合う側の面の中心を軸として回転可能に支持された、ことを特徴とする請求項4から請求項6のいずれか1項に記載の処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018122566A JP6575641B1 (ja) | 2018-06-28 | 2018-06-28 | シャワーヘッドおよび処理装置 |
KR1020217002516A KR102253872B1 (ko) | 2018-06-28 | 2019-02-20 | 샤워 헤드 및 처리 장치 |
US17/254,481 US11220750B2 (en) | 2018-06-28 | 2019-02-20 | Shower head and processing device |
PCT/JP2019/006199 WO2020003591A1 (ja) | 2018-06-28 | 2019-02-20 | シャワーヘッドおよび処理装置 |
TW108109946A TWI731319B (zh) | 2018-06-28 | 2019-03-22 | 噴灑頭及處理裝置 |
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JP2018122566A JP6575641B1 (ja) | 2018-06-28 | 2018-06-28 | シャワーヘッドおよび処理装置 |
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JP6575641B1 true JP6575641B1 (ja) | 2019-09-18 |
JP2020004833A JP2020004833A (ja) | 2020-01-09 |
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US (1) | US11220750B2 (ja) |
JP (1) | JP6575641B1 (ja) |
KR (1) | KR102253872B1 (ja) |
TW (1) | TWI731319B (ja) |
WO (1) | WO2020003591A1 (ja) |
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