TW202146691A - 氣體分配總成、噴淋板總成、及調整至反應室之氣體的傳導率之方法 - Google Patents
氣體分配總成、噴淋板總成、及調整至反應室之氣體的傳導率之方法 Download PDFInfo
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Abstract
所揭示者係一種用於調整穿過一氣體供應單元至一反應室中之氣體流量的氣體分配總成及方法。氣體分配總成及方法可用以均勻地增加或減小穿過氣體供應單元的氣體流量。氣體分配總成及方法亦可用以增加至反應室的一個區域中之氣體流量,同時減小至另一區域中的氣體流量。
Description
本揭露大致上係關於用於調整穿過氣體供應單元進入反應室的氣體流量之設備及其使用方法。
諸如化學氣相沉積(chemical vapor deposition,CVD)、電漿增強化學氣相沉積(plasma-enhanced CVD,PECVD)、原子層沉積(atomic layer deposition,ALD)、及類似者之氣相反應器可用於包括清潔、沉積、及蝕刻基板表面上之材料的各種應用。例如,氣相反應器可用以清潔、沉積、及/或蝕刻基板上的層,以形成半導體裝置、平板顯示裝置、光伏打裝置(photovoltaic devices)、微機電系統(microelectromechanical systems,MEMS)、及類似者。
對電漿製程而言,改變噴淋板與氣體通道之間的間隙改變了氣體至噴淋板中的傳導率(conductance),其可影響膜沉積之輪廓(profile)。然而,改變間隙通常需要設計及製造新氣體通道以及更換氣體通道,其需要下列步驟:將反應室帶回大氣壓力、使室冷卻、拆卸噴淋頭、更換氣體通道、重新組裝噴淋頭、加熱反應室、及將反應室帶至低壓。所有這些步驟均耗費時間及花費金錢,其很大程度地影響器械的效率。此外,當所沉積的膜厚度由於非預期原因(諸如對準構成器械的零件時的缺陷)而不均等(uneven)時。
電漿製程可進一步受到噴淋板設計的影響。例如,可調整噴淋板中的孔之直徑、形狀、數目、及分布圖案(distribution pattern),以便得到所想要的可控性(controllability)。然而,操縱這些參數之任何者通常包括使用不同的噴淋板及上述之耗時且昂貴的步驟,以便針對不同條件移除及更換噴淋板。
因此,所想要的係提供改善的氣體分配控制之改善的設備、總成、系統及方法。
本節提出之任何問題及解決方案討論僅為了提供本揭露背景之目的而包括在本揭露中,且不應視為承認在完成本揭露時已知討論之任何或全部內容。
本揭露之例示性實施例提供一種用於調整一氣體至一反應室中的分配之設備及方法。雖然在下文更詳細地討論本揭露之各種實施例解決先前設備及方法之缺點的方式,但大致上,本揭露之各種實施例提供可用以調整從一噴淋頭分配至一反應室的氣體量之氣體分配總成及方法。
在本揭露的各種實施例中;一種氣體分配總成包含一氣體歧管(manifold);一氣體通道,其在氣體歧管下方;一噴淋板總成,其在氣體通道下方,並與氣體歧管流體連通;及一或多個可調整間隙裝置;其中一間隙係形成在氣體通道之一下表面與噴淋板總成之一上表面之間;且其中可調整間隙裝置係配置以相對於噴淋板總成移動氣體通道,從而調整間隙的大小。
可調整間隙裝置可配置以相對於噴淋板總成在一垂直方向上移動氣體通道及/或傾斜氣體通道。可調整間隙裝置可配置以手動或遠端地調整。可調整間隙裝置之一或多者的各者可獨立地調整。在一些實施例中,使用三或更多個可調整間隙裝置。可調整間隙裝置可以是一螺絲(screw)、一螺栓(bolt)、或任何其他調整裝置。可調整間隙裝置可進一步包含一支撐環,其具有大於可調整間隙裝置之一頂表面的一表面積,其中支撐環的上表面接觸氣體通道之下表面。
氣體通道的一中心部分可設置在噴淋板總成的一中心部分內。氣體分配總成可進一步包含一或多個密封結構,其經定位在氣體通道之中心部分的一外部側表面與噴淋板總成之中心部分的一內部側表面之間,以用於防止或緩解(mitigating)來自間隙的氣體洩漏。氣體分配總成亦可包含一或多個接觸彈簧,其經定位在氣體通道之中心部分的外部側表面與噴淋板總成之中心部分的內部側表面之間以用於將噴淋板總成電性耦接至一電源。
氣體分配總成可進一步包含一絕緣器,其在氣體歧管下方:及一轉接器(adaptor),其介於氣體歧管與絕緣器之間,其中絕緣器係配置以與氣體通道協作地(cooperatively)移動。氣體分配總成可更包括密封結構,其等在轉接器與絕緣器之間,以緩解來自轉接器及絕緣器的氣體洩漏。
在各種實施例中,噴淋板總成包含一上部板;一下部板,其包含複數個孔口;及一或多個連接器,其將上部板耦接至下部板;其中一或多個連接器係配置以移動下部板及上部板的至少一者,從而調整間隙的大小。噴淋板總成可與上述的氣體分配總成或與另一氣體分配總成併用。在一些實施例中,噴淋板總成進一步包含一密封結構,其在上部板與下部板之間。在一些實施例中,上部板包含一凹部(recess),其接納下部板之一延伸,且連接器在凹部及延伸的位置處連接上部板及下部板。
所屬技術領域中具有通常知識者將從已參照隨附圖式之某些實施例的下列詳細描述輕易明白這些及其他實施例;本揭露並未受限於任何所揭示的特定實施例。
雖然在下文揭示某些實施例及實例,所屬技術領域中具有通常知識者將瞭解,本揭露延伸超出本揭露及其明顯的修改與均等物之具體揭示的實施例及/或用途。因此,意欲使所揭示之本揭露的範疇不應受下文所述之具體揭示實施例的限制。
本揭露大致上係關於包括氣體分配總成及/或噴淋板總成之設備、總成、及系統,並關於其等之使用方法。如下文更詳細提出的,本文所述之例示性系統、總成、設備、及方法可用以修改穿過氣體供應單元從氣體通道至反應器之反應室的氣體流量分配,以用於例如改善沉積均勻性。額外或替代地,可以相對短的時間量及/或相對廉價的方式,來操縱從氣體通道至反應室的氣體流量分配。
在本揭露中,「氣體(gas)」可包括為常溫及常壓下之氣體、汽化固體、及/或汽化液體之材料,並可取決於上下文由單一氣體或氣體混合物構成。有別於製程氣體的氣體(亦即,經引入而未穿過氣體供應單元(諸如噴淋頭、其他氣體分配裝置、或類似者)的氣體)可用於例如密封反應空間,並可包括密封氣體(諸如,稀有氣體)。氣體可以是參與反應室內之反應的反應物或前驅物及/或包括周圍氣體(諸如空氣)。
在本揭露中,變數之任何兩個數目可構成變數之可工作範圍,因為可工作範圍可基於例行工作而判定,且所指示之任何範圍可包括或排除端點(endpoints)。此外,所指示的變數之任何數值(不管此等數值是否以「約」來指示)可指精確值或近似值並包括等效值,且在一些實施例中可指平均值、中值、代表值、多數值等。進一步地,在本揭露中,於一些實施例中,用語「由……構成(constituted by)」、「包括(including/include)」、及「具有(having)」係獨立地指「一般或廣泛地包含(typically or broadly comprising)」、「包含(comprising)」、「基本上由……組成(consisting essentially of)」、或「由……組成(consisting of)」。在本揭露中,於一些實施例中,任何已定義之意義不必然排除尋常及慣例意義(ordinary and customary meanings)。
轉向圖式,第1A圖及第1B圖繪示根據本揭露之至少一實施例之氣體分配總成100。氣體分配總成100包括氣體歧管114、氣體通道102、及噴淋板總成104。第1A圖繪示氣體通道102相對於噴淋板104之垂直移動110,其中在氣體通道102的下表面與噴淋板104的上表面之間的區域界定間隙108。隨著氣體通道102向上移動,經界定於氣體通道102的下表面與噴淋板104的上表面之間的間隙108之高度增加。隨著氣體通道102向下移動,間隙108之高度減小。第1B圖繪示氣體通道102之傾斜移動(tilting movement)112。白色箭頭繪示穿過噴淋板104至反應室106中的氣體流量,其受到可隨著氣體通道102的垂直移動及傾斜而變化之間隙108的大小所影響。較寬的箭頭指示較高的氣體流量,而較窄的箭頭指示較低的氣體流量。如第1B圖所繪示,隨著氣體通道102在總成100的一個位置處向下傾斜,穿過噴淋板104並進入反應室106中的氣體流量在此位置處減少。傾斜移動可在總成的其他區域處向上舉升氣體通道102,導致在那些區域處的氣體流量增加。
第2A圖及第2B圖繪示根據本揭露之至少一實施例之氣體分配總成200。在所繪示之實例中,總成200包括氣體通道202、噴淋板總成204、可調整間隙裝置208、及氣體歧管210。第2A圖繪示隨著可調整間隙裝置208根據一些實施例而旋轉214,氣體通道202相對於噴淋板204之垂直移動212。垂直移動改變間隙228的大小。第2B圖繪示氣體分配總成200的上視圖,其中可見三個大約均等間隔的可調整間隙裝置208。在所繪示之實施例中,氣體分配總成200包括三個可調整間隙裝置208,其等隔開大約120°。在此上下文中,「大約(approximately)」意指正負10度。在其他實施例中,氣體分配總成200包括一個可調整間隙裝置208。在其他實施例中,氣體分配總成200包括兩個可調整間隙裝置208。在仍有其他實施例中,氣體分配總成200包括若干可調整間隙裝置208(例如四個、五個、六個、七個、八個、九個、十個等),其等可例如均等地隔開。
第3圖繪示根據本揭露之一實施例之氣體分配總成300。氣體分配總成300包括可調整間隙裝置308,並更包括轉接器(adaptor)312。由於可調整間隙裝置308係用以調整氣體通道302相對於噴淋板總成304的垂直移動及/或傾斜,轉接器312允許絕緣器314在不影響氣體歧管310的情況下移動。
第4A圖繪示使用固定插銷400來固定間隙距離之氣體分配總成的一部分。如所繪示,插銷400通過噴淋板總成404及氣體通道402且係不可調整的,因此間隙在不拆卸氣體分配總成的情況下係不可調整的。密封結構406係放置於氣體通道402的下表面與噴頭板總成404的上表面之間,以便防止或緩解氣體洩漏。位置介於氣體通道402的下表面與噴淋板總成404的上表面之間的接觸彈簧408允許從電源穿過噴淋板總成404的射頻傳輸。
根據本揭露之例示性可調整間隙裝置500係更詳細地繪示於第5圖中。不同於先前用在氣體分配總成中之插銷(諸如插銷400),可調整間隙裝置500能夠進行調整,以相對於噴淋板總成504升起或降下氣體通道502。在一些實施例中,可調整間隙裝置500係螺絲。然而,可使用任何調整裝置或機構(諸如帶螺紋調整裝置;例如螺栓、可動墊片、或類似者)。當可調整間隙裝置500係螺絲時,可調整間隙裝置500或類似裝置可包括例如六角凹部506,其用於接納可用以旋轉螺絲之套筒板手(wrench key)。然而,可使用任何類型的螺絲及對應的調整裝置。不同於先前的氣體分配總成,密封結構508及接觸彈簧510係側向地放置於氣體通道502的外表面與噴淋板總成504的內表面之間。此可減少或緩解密封結構508及接觸彈簧510隨著氣體通道502移動而位移,從而維持真空條件及射頻傳輸。在一些實施例中,密封結構508係O型環(O-ring)。然而,可使用任何密封裝置。在一些實施例中,可調整間隙裝置500之一或多者可從反應器外部調整。在一些實施例中,可調整間隙裝置500之一或多者可手動調整。在一些實施例中,可調整間隙裝置500之一或多者可遠端調整。
當氣體通道502由數目較少的可調整間隙裝置500(例如三或更少個)支撐時,高約束集中(high constraint concentration)可發生在可調整間隙裝置500的位置處。若可調整間隙裝置500以無法抗約束(constraint)的材料製成,則可發生裝置損壞。因此,在一些實施例中,加上支撐環512以擴大可調整間隙裝置500與氣體通道502的下表面之間的接觸面積。在一些實施例中,支撐環512係以強合金(strong alloy)(諸如碳鋼、鉻鉬鋼等)製成。在一些實施例中,可加上彈簧(未圖示)以支撐氣體通道,並使可調整間隙裝置500上所得的力變小。
在另一實施例中,使用一或多個彈簧1500減少約束集中,如第15圖所繪示者。可加上彈簧1500以防止或減少氣體通道1502及噴淋板總成1504之損壞。在一些實施例中,使用一個彈簧1500。在一些實施例中,使用若干個彈簧1500(例如兩個、三個、四個、五個、六個、七個、八個、九個、十個等彈簧),其等可以是例如均等地隔開。
氣體歧管600及絕緣器602之一實例係顯示於第6圖中。在先前的氣體分配總成中,將氣體歧管600及絕緣器602固定。氣體通道604並未移動且不影響其他零件。
反之,本揭露之一些實施例包括轉接器700,如第7圖所繪示者。在一些實施例中,轉接器700係固定至氣體歧管702,且係放置在氣體歧管702與絕緣器704之間。進一步地,不同於先前用在氣體分配總成中之歧管,絕緣器704係未經固定。反而,絕緣器704可例如與氣體通道706之垂直移動及傾斜協作地移動。在一些實施例中,水平間隙708允許絕緣器704隨著氣體通道706傾斜,而在水平方向上偏移。在一些實施例中,垂直間隙710允許絕緣器704隨著氣體通道706垂直地移動,而在垂直方向上偏移。在一些實施例中,轉接器密封結構714係用以緩解或防止來自垂直間隙及水平間隙的氣體洩漏。
在一些實施例中,射頻蓋體712係一體式設計。然而,射頻蓋體可包括二或更多個零件。第14圖繪示另一例示性射頻蓋體1400。在此實施例中,射頻蓋體1400係分成兩個部分,内部部分1402及外部部分1404。内部部分環繞轉接器1406及絕緣器1408。在一些實施例中,兩部分在其等之間具有接觸彈簧,以允許射頻流過此等部分。
在一些實施例中,噴淋板總成亦係可調整的,以控制至反應室中之氣體流量。第8圖繪示噴淋板800,其中噴淋板800係接納氣體通道802之單一板。
第9圖繪示根據本揭露之一實施例之噴淋板總成900的一部分。噴淋板總成900包含上部板902、下部板904、及一或多個連接器906,連接器將上部板902耦接至下部板904。間隙908係形成於上部板902的下表面與氣體通道912及下部板904的上表面之間。連接器906係可調整的,以用於控制間隙908的大小,且因此控制從氣體通道912至下部板904中之氣體流量。在一些實施例中,調整連接器906相對於上部板902在垂直方向上移動下部板904。在一些實施例中,調整連接器906相對於下部板904在垂直方向上移動上部板902。在其他實施例中,調整連接器906在相對方向上移動上部板902及下部板904,以調整間隙908的大小。
類似於上述之可調整間隙裝置,在一些實施例中,連接器906係螺絲。然而,可使用可用以調整上部板902與下部板904之間的間隙大小之任何緊固裝置。在一些實施例中,噴淋板總成900包括兩個連接器906。然而,噴淋板總成900可包括若干連接器906(例如,三個、四個、五個、六個、七個、八個、九個、十個等連接器906)。
在一些實施例中,噴淋板總成900包括一或多個密封裝置910,其配置以緩解或防止來自間隙908之氣體洩漏。在一些實施例中,一個密封裝置910係用在各連接器906處。在其他實施例中,使用兩個密封裝置910,一者在上部板902及下部板904的內部部分處近接連接器906,另一者在上部板902及下部板904的外部部分處近接連接器906。
第10圖繪示另一例示性噴淋板總成1000的一部分。在此實施例中,噴淋板總成1000包含上部板1002、下部板1004、及一或多個連接器1006,其中來自間隙1008的氣體洩漏係在沒有密封裝置的情況下經減少或防止。在一些實施例中,接近上部板1002之外部邊緣的凹部1010係配置以接納下部板1004之延伸(extension)1012。此配置造就使連接器1006藉由之間隙1008的升高區段(elevated segment)。當氣體從氣體通道1014傳遞至下部板1004時,此配置減少來自間隙1008的氣體洩漏。
在一些實施例中,連接器906/1006之一或多者可從反應器外部調整。在一些實施例中,連接器906/1006之一或多者可手動調整。在一些實施例中,連接器906/1006之一或多者可遠端調整。如第11圖所繪示,在一些實施例中,連接器1102之一或多者係經由安裝在反應器外部,且在操作上耦接至一或多個連接器906/1006之步進馬達1100來進行調整。
實例1
第12圖繪示用以藉由電漿原子層沉積製程在300毫米(mm)Si基板上執行氧化矽膜沉積之反應室的一部分。反應室1200具有兩個金屬密封結構(例如,相鄰於連接器1204之O型環1202(內部及外部))。O型環係以英高鎳600合金(inconel 600 alloy)製成,並具有C形剖面。O型環具有8毫米的剖面直徑及彈簧特性。O型環係在彈性變形限度內使用,以用於調整間隙1206。額外地,表面係以鋁塗佈,以致能良好的密封能力、重金屬污染預防、及對從上部板1208至下部板1210之射頻功率傳輸的較佳滲透性(permeability)。基板基座1212的直徑係325毫米,且下部板1210的直徑係350毫米。在上部板1208上施加200瓦(W)射頻功率(13.56百萬赫茲(MHz(),並將基座1212接地。將基板1218放置在基板基座1212上,並使用連接器1204調整下部板1210與氣體通道1216之間的距離1214。
第12圖顯示具有反應室900之製程性能。基座溫度係控制在100°C,且反應器壓力係設定在400帕(Pa)。將上部板1208與下部板1210之間的間隙1206從0.5毫米調整至2.0毫米。兩板之間的間隙1206有效地控制膜厚度輪廓(film thickness profile)。兩板之間的較窄間隙得出凹面膜輪廓(concave film profile),其中中心係薄的。較寬的間隙得出凸面膜輪廓(convex film profile),其中中心係厚的。
上述噴淋板總成之任何者可用在上述氣體分配總成之任何者中。替代地,噴淋板總成可用在其他總成中。
在一些實施例中,提供一種用於使用上述之氣體分配總成及噴淋板總成之一或多者調整至反應室中之氣體的傳導率之方法。
上述之本揭露的實例實施例並未限制本揭露的範疇,因為這些實施例僅係本揭露之實施例的實例。任何等效實施例係意欲屬於本揭露之範疇內。實際上,除本文所顯示及描述之修改以外,諸如所描述要素之替代性有用組合之本揭露之各種修改可根據描述而變得對熟悉本技藝者顯而易見。此等修改及具體例亦意欲落入所附申請專利範圍之範疇內。
100:氣體分配總成
102:氣體通道
104:噴淋板總成
106:反應室
108:間隙
110:垂直移動
112:傾斜移動
114:氣體歧管
200:氣體分配總成
202:氣體通道
204:噴淋板總成
208:可調整間隙裝置
210:氣體歧管
212:垂直移動
214:旋轉
228:間隙
300:氣體分配總成
302:氣體通道
304:噴淋板總成
308:可調整間隙裝置
310:歧管
312:轉接器
314:絕緣器
400:固定插銷
402:氣體通道
404:噴淋板總成
406:密封結構
408:接觸彈簧
500:可調整間隙裝置
502:氣體通道
504:噴淋板總成
506:六角凹部
508:密封結構
510:接觸彈簧
512:支撐環
600:氣體歧管
602:絕緣器
604:氣體通道
700:轉接器
702:氣體歧管
704:絕緣器
706:氣體通道
708:水平間隙
710:垂直間隙
712:射頻蓋體
714:轉接器密封結構
800:噴淋板
802:氣體通道
900:噴淋板總成/反應室
902:上部板
904:下部板
906:連接器
908:間隙
910:密封裝置
912:氣體通道
1000:噴淋板總成
1002:上部板
1004:下部板
1006:連接器
1008:間隙
1010:凹部
1012:延伸
1014:氣體通道
1100:步進馬達
1102:連接器
1200:反應室
1202:O型環
1204:連接器
1206:間隙
1208:上部板
1210:下部板
1212:基座
1214:距離
1216:氣體通道
1218:基板
1400:射頻蓋體
1402:内部部分
1404:外部部分
1406:内部部分環繞轉接器
1408:絕緣器
1500:彈簧
1502:氣體通道
1504:噴淋板總成
當結合下列說明圖式考慮時,可藉由參照實施方式及申請專利範圍而得到對本揭露之例示性實施例的更完整瞭解。
第1A圖及第1B圖繪示依據本揭露之至少一實施例之氣體分配總成。
第2A圖及第2B圖繪示根據本揭露之至少一實施例之氣體分配總成。
第3圖繪示根據本揭露之至少一實施例之氣體分配總成。
第4圖繪示插銷裝置。
第5圖繪示根據本揭露之至少一實施例之可調整間隙裝置。
第6圖繪示氣體歧管及絕緣器。
第7圖繪示根據本揭露之至少一實施例之氣體歧管、轉接器、及絕緣器。
第8圖繪示噴淋板總成。
第9圖繪示依據本揭露之至少一實施例之噴淋板總成的一部分。
第10圖繪示依據本揭露之至少一實施例之噴淋板總成的一部分。
第11圖繪示依據本揭露之至少一實施例之噴淋板總成的一部分。
第12圖繪示根據本揭露之至少一實施例之反應室的一部分。
第13圖繪示根據本揭露之實施例所沉積之氧化矽的厚度剖面。
第14圖繪示根據本揭露之至少一實施例之氣體歧管、轉接器、絕緣器、及射頻蓋體(RF cover)。
第15圖繪示根據本揭露之至少一實施例之可調整間隙裝置。
將理解,圖式中之元件係為了簡單及清楚起見而繪示,且不一定按比例繪製。舉例而言,圖式中之元件中之一些之尺寸可相對於其他元件而言放大,以幫助改善對所繪示本揭露具體例的理解。
1200:反應室
1202:O型環
1204:連接器
1206:間隙
1208:上部板
1210:下部板
1212:基座
1214:距離
1216:氣體通道
1218:基板
Claims (21)
- 一種用於將一氣體分配至一反應室之氣體分配總成,包括: 一氣體歧管; 一氣體通道,在該氣體歧管下方; 一噴淋板總成,在該氣體通道下方,並與該氣體歧管流體連通;以及 一或多個可調整間隙裝置; 其中在該氣體通道的一下表面與該噴淋板總成的一上表面之間形成一間隙;且 其中該一或多個可調整間隙裝置係配置以相對於該噴淋板總成移動該氣體通道,從而調整該間隙的大小。
- 如請求項1之氣體分配總成,其中該一或多個可調整間隙裝置係配置以相對於該噴淋板總成在一垂直方向上移動該氣體通道。
- 如請求項1或2之氣體分配總成,其中該一或多個可調整間隙裝置係配置以相對於該噴淋板總成使該氣體通道傾斜。
- 如請求項1之氣體分配總成,其中該一或多個可調整間隙裝置之各者係配置以獨立地調整。
- 如請求項1之氣體分配總成,包括三或更多個可調整間隙裝置。
- 如請求項1之氣體分配總成,其中該等可調整間隙裝置之該一或多者中的至少一者包括一螺絲。
- 如請求項1之氣體分配總成, 其中該氣體通道的一中心部分係設置在該噴淋板總成的一中心部分內, 其中該氣體分配總成更包括一或多個密封結構,該一或多個密封結構在該氣體通道之該中心部分的一外部側表面與該噴淋板總成之該中心部分的一內部側表面之間,且 其中該等密封結構係配置以緩解來自該間隙的該氣體洩漏。
- 如請求項1之氣體分配總成, 其中該氣體通道的一中心部分係設置在該噴淋板總成的一中心部分內, 其中該氣體分配總成更包括一或多個接觸彈簧,該一或多個接觸彈簧在該氣體通道之該中心部分的一外部側表面與該噴淋板總成之該中心部分的一內部側表面之間,且 其中該一或多個接觸彈簧係配置以將該噴淋板總成耦接至一電源。
- 如請求項1之氣體分配總成,其中該一或多個可調整間隙裝置之各者包括一支撐環,該支撐環具有大於該可調整間隙裝置之一頂表面的一表面積,其中該支撐環的一上表面接觸該氣體通道之該下表面。
- 如請求項1之氣體分配總成,更包括一絕緣器以及一轉接器,該絕緣器在該氣體歧管下方,且該轉接器介於該氣體歧管與該絕緣器之間,其中該絕緣器係配置以與該氣體通道協作地移動。
- 如請求項10之氣體分配總成,更包括一或多個密封結構,該一或多個密封結構在該轉接器與該絕緣器之間,其中該等密封結構係配置以緩解來自該轉接器及該絕緣器的一氣體洩漏。
- 如請求項1之氣體分配總成,其中該噴淋板總成包括 一上部板; 一下部板,包括複數個孔口;以及 一或多個連接器; 其中該一或多個連接器係配置以移動該下部板及該上部板之至少一者,從而調整該間隙的大小。
- 如請求項12之氣體分配總成,其中該噴淋板總成更包括一密封結構,在該上部板與該下部板之間。
- 如請求項12之氣體分配總成,其中該上部板包括一凹部,接納該下部板之一延伸,且其中該連接器係位於該凹部與該延伸之間。
- 一種調整至一反應室之一氣體的傳導率之方法,包括調整該反應室上方之一氣體分配總成,其中該氣體分配總成包括: 一氣體歧管; 一氣體通道,在該氣體歧管下方; 一噴淋板總成,在該氣體通道下方,並與該氣體歧管流體連通;以及 一或多個可調整間隙裝置; 其中在該氣體通道的一下表面與該噴淋板總成的一上表面之間形成一間隙; 其中該一或多個可調整間隙裝置係配置以相對於該噴淋板總成移動該氣體通道;且 其中調整該氣體分配總成包括調整該等可調整間隙裝置中之至少一者。
- 如請求項15之方法,其中調整該一或多個可調整間隙裝置係相對於該噴淋板總成在一垂直方向上移動該氣體通道。
- 如請求項1或16之方法,其中調整該一或多個可調整間隙裝置係相對於該噴淋板總成使該氣體通道傾斜。
- 如請求項15之方法,其中調整該氣體分配總成包括手動或遠端地調整該一或多個可調整間隙裝置。
- 一種用於將一氣體分配至一反應室之噴淋板總成,包括: 一上部板; 一下部板,包括在一反應室上方之複數個孔口;以及 一或多個連接器; 其中在該上部板的一下表面與該下部板的一上表面之間形成一間隙; 其中該下部板係與一氣體源流體連通; 其中該一或多個連接器係配置以移動該下部板及該上部板之至少一者,從而調整該間隙的大小。
- 如請求項19之噴淋板總成,其中該一或多個連接器係配置以手動或遠端地調整。
- 一種調整至一反應室之一氣體的傳導率之方法,包括調整該反應室上方之一噴淋板總成,其中該噴淋板總成包括: 一上部板; 一下部板,包括在一反應室上方之複數個孔口;以及 一或多個連接器; 其中在該上部板的一下表面與該下部板的一上表面之間形成一間隙; 其中該下部板係與一氣體源流體連通; 其中該一或多個連接器係配置以移動該下部板及該上部板之至少一者;且 其中調整該噴淋板總成包括調整該等連接器。
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KR102102787B1 (ko) * | 2013-12-17 | 2020-04-22 | 삼성전자주식회사 | 기판 처리 장치 및 블록커 플레이트 어셈블리 |
US9657845B2 (en) * | 2014-10-07 | 2017-05-23 | Asm Ip Holding B.V. | Variable conductance gas distribution apparatus and method |
US10190216B1 (en) * | 2017-07-25 | 2019-01-29 | Lam Research Corporation | Showerhead tilt mechanism |
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2021
- 2021-02-04 KR KR1020210015923A patent/KR20210103953A/ko active Search and Examination
- 2021-02-04 TW TW110104215A patent/TW202146691A/zh unknown
- 2021-02-07 CN CN202110176866.8A patent/CN113257654A/zh active Pending
- 2021-02-09 JP JP2021018951A patent/JP2021127522A/ja active Pending
- 2021-02-09 US US17/171,793 patent/US20210254216A1/en active Pending
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KR20210103953A (ko) | 2021-08-24 |
US20210254216A1 (en) | 2021-08-19 |
JP2021127522A (ja) | 2021-09-02 |
CN113257654A (zh) | 2021-08-13 |
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