JP7121446B2 - 高密度プラズマ化学気相堆積チャンバ - Google Patents
高密度プラズマ化学気相堆積チャンバ Download PDFInfo
- Publication number
- JP7121446B2 JP7121446B2 JP2021504228A JP2021504228A JP7121446B2 JP 7121446 B2 JP7121446 B2 JP 7121446B2 JP 2021504228 A JP2021504228 A JP 2021504228A JP 2021504228 A JP2021504228 A JP 2021504228A JP 7121446 B2 JP7121446 B2 JP 7121446B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- perforated
- showerhead
- chamber
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
Claims (15)
- 複数の支持部材のうちの1つ又は複数に各々が連結された複数の穿孔タイルを有するシャワーヘッドと、
複数の誘電体プレートであって、前記複数の誘電体プレートの1つが、前記複数の穿孔タイルの1つに対向する、複数の誘電体プレートと、
複数の誘導性連結器であって、前記複数の誘導性連結器の1つの誘導性連結器が、前記複数の誘電体プレートの1つの誘電体プレート上に、或いは、前記複数の誘電体プレートの1つの誘電体プレートに隣接して設けられ、前記支持部材が、前記誘導性連結器と前記穿孔タイルとの間に形成される空間に前駆体ガスを供給する、複数の誘導性連結器と
を備える、プラズマ堆積チャンバ。 - 前記複数の支持部材の各々が、前記前駆体ガスを流すための、内部に形成された導管を含む、請求項1に記載のチャンバ。
- 前記複数の支持部材の各々が、冷却剤を流すための、内部に形成された冷却剤チャネルを含む、請求項1に記載のチャンバ。
- 前記誘導性連結器がそれぞれ、各誘電体プレート上に、或いは、各誘電体プレートに隣接して設けられ、前記誘電体プレートが、前記空間の片側と境を接する、請求項1に記載のチャンバ。
- 前記複数の穿孔タイル及び前記複数の支持部材の各々が、界面部分を含む、請求項1に記載のチャンバ。
- 各界面部分が、取り外し可能なストリップを含む、請求項5に記載のチャンバ。
- 前記複数の穿孔タイルの一部が、穿孔ストリップによって分離される、請求項1に記載のチャンバ。
- 各穿孔ストリップが、界面部分によって前記複数の支持部材の1つの支持部材に連結される、請求項7に記載のチャンバ。
- 各界面部分が、取り外し可能なストリップを含む、請求項8に記載のチャンバ。
- プラズマ堆積チャンバのためのシャワーヘッドであって、
複数の第1の支持面と複数の第2の支持面とを備える支持部材であって、前記複数の第1の支持面が、第1の方向に、前記複数の第2の支持面から第1の距離に配置される、支持部材と、
複数の穿孔タイルと複数の誘電体プレートとを備える複数のガス供給アセンブリであって、前記複数のガス供給アセンブリの各々が、
前記複数の第1の支持面の1つの第1の支持面上に配置された穿孔タイルと、
前記複数の第2の支持面の1つの第2の支持面上に配置された誘電体プレートと、
を備え、
ガス空間が、前記誘電体プレートの表面と前記穿孔タイルの表面との間に画定される、複数のガス供給アセンブリと、
複数のガス供給ポートであって、各ガス供給ポートが、前記複数のガス供給アセンブリのガス空間にガスを供給するように構成される、複数のガス供給ポートと、
前記シャワーヘッド内の前記複数のガス供給アセンブリの1つ又は複数の上に配置されたコイルと、
を備える、シャワーヘッド。 - 前記支持部材が、前駆体ガスを流すための、内部に形成された導管を含む、請求項10に記載のシャワーヘッド。
- 前記支持部材が、冷却剤を流すための、内部に形成された冷却剤チャネルを含む、請求項10に記載のシャワーヘッド。
- 前記誘電体プレートが、前記ガス空間の片側と境を接する、請求項10に記載のシャワーヘッド。
- 前記複数の穿孔タイル及び前記支持部材の各々が、界面部分を含む、請求項10に記載のシャワーヘッド。
- 各界面部分が、取り外し可能なストリップを含み、前記複数の穿孔タイルの一部が、穿孔ストリップによって分離される、請求項14に記載のシャワーヘッド。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862720974P | 2018-08-22 | 2018-08-22 | |
US62/720,974 | 2018-08-22 | ||
PCT/US2019/042684 WO2020040915A1 (en) | 2018-08-22 | 2019-07-19 | High density plasma enhanced chemical vapor deposition chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021535275A JP2021535275A (ja) | 2021-12-16 |
JP7121446B2 true JP7121446B2 (ja) | 2022-08-18 |
Family
ID=69591249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021504228A Active JP7121446B2 (ja) | 2018-08-22 | 2019-07-19 | 高密度プラズマ化学気相堆積チャンバ |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7121446B2 (ja) |
KR (1) | KR102479923B1 (ja) |
CN (1) | CN112534557A (ja) |
TW (1) | TWI723473B (ja) |
WO (1) | WO2020040915A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021126172A1 (en) * | 2019-12-17 | 2021-06-24 | Applied Materials, Inc. | High density plasma enhanced chemical vapor deposition chamber |
CN114582693A (zh) * | 2020-11-30 | 2022-06-03 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其末端执行器、边缘环及方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110079356A1 (en) | 2009-10-01 | 2011-04-07 | Kim Minshik | Side gas injector for plasma reaction chamber |
US20110256729A1 (en) | 2010-04-19 | 2011-10-20 | Texas Instruments Incorporated | Showerhead for CVD Depositions |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6203657B1 (en) * | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
US5997649A (en) * | 1998-04-09 | 1999-12-07 | Tokyo Electron Limited | Stacked showerhead assembly for delivering gases and RF power to a reaction chamber |
JP3609985B2 (ja) * | 1999-05-13 | 2005-01-12 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
US6331754B1 (en) * | 1999-05-13 | 2001-12-18 | Tokyo Electron Limited | Inductively-coupled-plasma-processing apparatus |
US6820570B2 (en) * | 2001-08-15 | 2004-11-23 | Nobel Biocare Services Ag | Atomic layer deposition reactor |
JP5013393B2 (ja) * | 2005-03-30 | 2012-08-29 | 東京エレクトロン株式会社 | プラズマ処理装置と方法 |
KR101765754B1 (ko) * | 2010-05-12 | 2017-08-09 | 주식회사 탑 엔지니어링 | 샤워헤드 및 이를 포함하는 반도체 기판 가공 장치 |
JP5591585B2 (ja) * | 2010-05-17 | 2014-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101246191B1 (ko) * | 2011-10-13 | 2013-03-21 | 주식회사 윈텔 | 플라즈마 장치 및 기판 처리 장치 |
KR101388222B1 (ko) * | 2012-02-13 | 2014-04-23 | 주식회사 케이씨텍 | 균일한 플라즈마 형성을 위한 원자층 증착장치 |
JP5992288B2 (ja) * | 2012-10-15 | 2016-09-14 | 東京エレクトロン株式会社 | ガス導入装置及び誘導結合プラズマ処理装置 |
KR20160084261A (ko) * | 2015-01-05 | 2016-07-13 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
JP2016225018A (ja) * | 2015-05-27 | 2016-12-28 | 東京エレクトロン株式会社 | ガス処理装置およびそれに用いる多分割シャワーヘッド |
JP2017147204A (ja) * | 2016-02-19 | 2017-08-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2019
- 2019-07-19 CN CN201980050508.3A patent/CN112534557A/zh active Pending
- 2019-07-19 JP JP2021504228A patent/JP7121446B2/ja active Active
- 2019-07-19 KR KR1020217002767A patent/KR102479923B1/ko active IP Right Grant
- 2019-07-19 WO PCT/US2019/042684 patent/WO2020040915A1/en active Application Filing
- 2019-07-23 TW TW108125959A patent/TWI723473B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110079356A1 (en) | 2009-10-01 | 2011-04-07 | Kim Minshik | Side gas injector for plasma reaction chamber |
US20110256729A1 (en) | 2010-04-19 | 2011-10-20 | Texas Instruments Incorporated | Showerhead for CVD Depositions |
Also Published As
Publication number | Publication date |
---|---|
WO2020040915A1 (en) | 2020-02-27 |
CN112534557A (zh) | 2021-03-19 |
TW202025213A (zh) | 2020-07-01 |
KR20210013771A (ko) | 2021-02-05 |
KR102479923B1 (ko) | 2022-12-20 |
TWI723473B (zh) | 2021-04-01 |
JP2021535275A (ja) | 2021-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102649738B1 (ko) | 플라즈마 강화 화학 증기 증착을 위한 막 응력 제어 | |
CN100575547C (zh) | 通过气体分散器的等离子体均匀度控制 | |
TW202136569A (zh) | 高密度電漿強化的化學氣相沉積腔室 | |
KR20190001394U (ko) | 에지 균일성을 개선하기 위한 가스 확산기 홀 설계 | |
JP7121446B2 (ja) | 高密度プラズマ化学気相堆積チャンバ | |
WO2017052855A1 (en) | Frame with non-uniform gas flow clearance for improved cleaning | |
US20180340257A1 (en) | Diffuser for uniformity improvement in display pecvd applications | |
KR20200021404A (ko) | 처리 챔버들을 위한 코팅 재료 | |
US20200098549A1 (en) | Heat conductive spacer for plasma processing chamber | |
US20230272530A1 (en) | Large-area high-density plasma processing chamber for flat panel displays | |
US20230162948A1 (en) | Multi-antenna unit for large area inductively coupled plasma processing apparatus | |
US20230162947A1 (en) | High density plasma enhanced process chamber |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210318 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220215 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220512 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220705 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220802 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7121446 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |