TWI723473B - 電漿沉積腔室及用於其之噴頭 - Google Patents

電漿沉積腔室及用於其之噴頭 Download PDF

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Publication number
TWI723473B
TWI723473B TW108125959A TW108125959A TWI723473B TW I723473 B TWI723473 B TW I723473B TW 108125959 A TW108125959 A TW 108125959A TW 108125959 A TW108125959 A TW 108125959A TW I723473 B TWI723473 B TW I723473B
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TW
Taiwan
Prior art keywords
perforated
gas
supporting
interface part
chamber
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Application number
TW108125959A
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English (en)
Chinese (zh)
Other versions
TW202025213A (zh
Inventor
泰景 元
李永東
簡添 高
尚傑 亞大夫
壽永 崔
蘇海 安華
Original Assignee
美商應用材料股份有限公司
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Publication of TW202025213A publication Critical patent/TW202025213A/zh
Application granted granted Critical
Publication of TWI723473B publication Critical patent/TWI723473B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
TW108125959A 2018-08-22 2019-07-23 電漿沉積腔室及用於其之噴頭 TWI723473B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862720974P 2018-08-22 2018-08-22
US62/720,974 2018-08-22

Publications (2)

Publication Number Publication Date
TW202025213A TW202025213A (zh) 2020-07-01
TWI723473B true TWI723473B (zh) 2021-04-01

Family

ID=69591249

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108125959A TWI723473B (zh) 2018-08-22 2019-07-23 電漿沉積腔室及用於其之噴頭

Country Status (5)

Country Link
JP (1) JP7121446B2 (ja)
KR (1) KR102479923B1 (ja)
CN (1) CN112534557A (ja)
TW (1) TWI723473B (ja)
WO (1) WO2020040915A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220114044A (ko) * 2019-12-17 2022-08-17 어플라이드 머티어리얼스, 인코포레이티드 고밀도 플라즈마 강화 화학 기상 증착 챔버
CN114582693A (zh) * 2020-11-30 2022-06-03 中微半导体设备(上海)股份有限公司 等离子体处理装置及其末端执行器、边缘环及方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US20110079356A1 (en) * 2009-10-01 2011-04-07 Kim Minshik Side gas injector for plasma reaction chamber
US20110256729A1 (en) * 2010-04-19 2011-10-20 Texas Instruments Incorporated Showerhead for CVD Depositions
KR20110124935A (ko) * 2010-05-12 2011-11-18 주식회사 탑 엔지니어링 샤워헤드 및 이를 포함하는 반도체 기판 가공 장치
TWI517281B (zh) * 2010-05-17 2016-01-11 Tokyo Electron Ltd 電漿處理裝置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
JP3609985B2 (ja) 1999-05-13 2005-01-12 東京エレクトロン株式会社 誘導結合プラズマ処理装置
US6331754B1 (en) * 1999-05-13 2001-12-18 Tokyo Electron Limited Inductively-coupled-plasma-processing apparatus
US6820570B2 (en) * 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
JP5013393B2 (ja) * 2005-03-30 2012-08-29 東京エレクトロン株式会社 プラズマ処理装置と方法
KR101246191B1 (ko) * 2011-10-13 2013-03-21 주식회사 윈텔 플라즈마 장치 및 기판 처리 장치
KR101388222B1 (ko) * 2012-02-13 2014-04-23 주식회사 케이씨텍 균일한 플라즈마 형성을 위한 원자층 증착장치
JP5992288B2 (ja) 2012-10-15 2016-09-14 東京エレクトロン株式会社 ガス導入装置及び誘導結合プラズマ処理装置
KR20160084261A (ko) * 2015-01-05 2016-07-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법
JP2016225018A (ja) * 2015-05-27 2016-12-28 東京エレクトロン株式会社 ガス処理装置およびそれに用いる多分割シャワーヘッド
JP2017147204A (ja) * 2016-02-19 2017-08-24 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US20110079356A1 (en) * 2009-10-01 2011-04-07 Kim Minshik Side gas injector for plasma reaction chamber
US20110256729A1 (en) * 2010-04-19 2011-10-20 Texas Instruments Incorporated Showerhead for CVD Depositions
KR20110124935A (ko) * 2010-05-12 2011-11-18 주식회사 탑 엔지니어링 샤워헤드 및 이를 포함하는 반도체 기판 가공 장치
TWI517281B (zh) * 2010-05-17 2016-01-11 Tokyo Electron Ltd 電漿處理裝置

Also Published As

Publication number Publication date
CN112534557A (zh) 2021-03-19
JP7121446B2 (ja) 2022-08-18
WO2020040915A1 (en) 2020-02-27
KR102479923B1 (ko) 2022-12-20
KR20210013771A (ko) 2021-02-05
TW202025213A (zh) 2020-07-01
JP2021535275A (ja) 2021-12-16

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