JP7008918B2 - 選択的窒化シリコンエッチングの方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 116
- 238000005530 etching Methods 0.000 title claims description 49
- 229910052581 Si3N4 Inorganic materials 0.000 title description 70
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title description 57
- 239000000758 substrate Substances 0.000 claims description 101
- 230000008569 process Effects 0.000 claims description 71
- 238000012545 processing Methods 0.000 claims description 64
- 239000000463 material Substances 0.000 claims description 51
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 36
- 229910052757 nitrogen Inorganic materials 0.000 claims description 29
- 229910052786 argon Inorganic materials 0.000 claims description 23
- 125000006850 spacer group Chemical group 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 230000004907 flux Effects 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000003672 processing method Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 description 92
- 210000002381 plasma Anatomy 0.000 description 51
- 239000010410 layer Substances 0.000 description 30
- 238000000231 atomic layer deposition Methods 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000010926 purge Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 101100521334 Mus musculus Prom1 gene Proteins 0.000 description 1
- 101710112672 Probable tape measure protein Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 101710204224 Tape measure protein Proteins 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000009931 pascalization Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000012713 reactive precursor Substances 0.000 description 1
- 230000003134 recirculating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000013515 script Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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- H01L21/321—After treatment
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- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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Description
e-+NF3→NF2+F-
NF+NF→N2+2F
NF+NF2→N2+F2+F
O+NF2→NF+OF
O+NF→N2+F2+F
2OF→2F+O2
O+OF→O2+F
Si3N4+24F→3SiF4+4NF3
Claims (16)
- 基板処理方法であって、
プラズマ処理チャンバ内に、SiNを含む第1の材料と、該第1の材料とは異なる第2の材料とを含む基板を提供するステップと、
NF3とO2とを含むプロセスガスをプラズマ励起するステップと、
前記基板をプラズマ励起された前記プロセスガスに暴露して、前記第2の材料に対して前記第1の材料を選択的にエッチングするステップと、を含み、
O2/NF3ガス流量比が0.1と0.5の間である、方法。 - 前記第2の材料が、Si、SiO2、及びそれらの組合せからなる群から選択される、請求項1に記載の方法。
- 前記暴露中、前記プラズマ処理チャンバ内のガス圧力が300mTorrより大きい、請求項1に記載の方法。
- O2/NF3ガス流量比が1/3である、請求項1に記載の方法。
- 0.1と0.5の間にあるO2/NF3ガス流量比を選択して、前記第2の材料に対して前記第1の材料に対する最大エッチング選択性比をもたらすステップをさらに含む、請求項1に記載の方法。
- プラズマ励起された前記プロセスガス中のプラズマ種の運動エネルギーが、前記第1の材料及び前記第2の材料のスパッタリング閾値未満である、請求項1に記載の方法。
- プラズマ励起された前記プロセスガスを形成することは、接地されているか又は電力が供給されていない上部プレート電極と、前記基板を支持するRF電力供給された下部プレート電極と、を含む容量結合プラズマ源を使用してプラズマを生成することを含み、該下部プレート電極に印加されるRF電力は、前記第1の材料及び前記第2の材料のスパッタリング閾値未満の運動エネルギーを有する、プラズマ励起された前記プロセスガス中にプラズマ種を生成する、請求項1に記載の方法。
- 前記下部プレート電極に印加される前記RF電力は、50W以下である、請求項7に記載の方法。
- 前記プロセスガスが、Ar、N2、又はArとN2をさらに含む、請求項1に記載の方法。
- 前記プロセスガスが、NF3、O2、N2及びArからなる、請求項1に記載の方法。
- 前記第2の材料が前記基板上に隆起フィーチャを含み、前記第1の材料が該隆起フィーチャの水平部分及び垂直部分にコンフォーマル膜を形成し、前記暴露が該隆起フィーチャの垂直部分上に前記第1の材料の側壁スペーサを形成するスペーサエッチングプロセスを含む、請求項1に記載の方法。
- 前記第2の材料が前記基板上に隆起フィーチャを含み、前記第1の材料が前記隆起フィーチャの垂直部分上に側壁スペーサを形成し、前記暴露が前記隆起フィーチャから前記第1の材料の側壁スペーサを除去する、請求項1に記載の方法。
- 前記第1の材料が前記基板上に隆起フィーチャを含み、前記第2の材料が前記隆起フィーチャの垂直部分上に側壁スペーサを形成し、前記暴露が該側壁スペーサではなく前記第1の材料の隆起フィーチャを除去する、請求項1に記載の方法。
- プラズマ励起された前記プロセスガスを形成することは、高ラジカル対イオンフラックス比を生成する遠隔プラズマ源を使用してプラズマを生成するステップを含む、請求項1に記載の方法。
- 基板処理方法であって、
プラズマ処理チャンバ内に、SiNを含む第1の材料と、Si、SiO2及びそれらの組合せからなる群から選択される第2の材料とを含む基板を提供するステップと、
NF3とO2とを含むプラズマ励起されたプロセスガスを形成するステップと、
前記基板をプラズマ励起された前記プロセスガスに暴露して、前記第2の材料に対して前記第1の材料を選択的にエッチングするステップと、を含み、
前記暴露は、
プラズマ励起された前記プロセスガス中のプラズマ種の運動エネルギーが、前記第1の材料及び第2の材料のスパッタリング閾値未満である
プラズマ処理条件を満たす、方法。 - 前記プロセスガスが、Ar、N2、又はArとN2をさらに含む、請求項15に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201662342991P | 2016-05-29 | 2016-05-29 | |
US62/342,991 | 2016-05-29 | ||
US201662384481P | 2016-09-07 | 2016-09-07 | |
US62/384,481 | 2016-09-07 | ||
PCT/US2017/034860 WO2017210140A1 (en) | 2016-05-29 | 2017-05-26 | Method of selective silicon nitride etching |
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JP (1) | JP7008918B2 (ja) |
KR (1) | KR102523717B1 (ja) |
TW (1) | TWI648785B (ja) |
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US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
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