TW202229795A - 具注入器之基板處理設備 - Google Patents

具注入器之基板處理設備 Download PDF

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TW202229795A
TW202229795A TW110142474A TW110142474A TW202229795A TW 202229795 A TW202229795 A TW 202229795A TW 110142474 A TW110142474 A TW 110142474A TW 110142474 A TW110142474 A TW 110142474A TW 202229795 A TW202229795 A TW 202229795A
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gas
injectors
liner
processing apparatus
substrate processing
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科尼利厄斯 漢斯特拉
路西安 Ｃ 傑迪拉
瑞達 克里斯 Ｇ Ｍ 迪
羅賓 魯洛夫斯
維爾納 科納本
赫伯特 特后司特
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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Abstract

所揭示者係一種基板處理設備，其具有爐管、襯底爐管之內表面的閉合襯件、用以提供氣體至襯件之内部空間的複數個氣體注入器，及用以從內部空間移除氣體的氣體排放管。襯件可具有實質上圓柱狀壁，其由在下端處的襯件開口定界，並且在襯件開口上方對於氣體實質上閉合。設備可具有一晶舟，其經構造及配置以經由襯件開口可移動至内部空間中，並具備複數個基板固持器，此複數個基板固持器用於在內部空間中跨基板支撐長度固持複數個基板。氣體注入器中之各者可在頂部處具有單一出口開口，且複數個注入器之出口開口跨基板支撐長度實質上均等劃分。

Description

具注入器之基板處理設備
本揭露係關於基板處理設備，包含： 一爐管； 複數個氣體注入器，用以提供一氣體至此設備之一内部空間； 一氣體排放管，用以從此內部空間移除氣體；以及， 一晶舟，經構造及配置以可移動至此内部空間中且具備複數個基板固持器，此複數個基板固持器用於在此内部空間中跨基板支撐長度固持複數個基板。
用於處理基板（例如半導體晶圓）的基板處理設備（諸如垂直處理爐(vertical processing furnace)）可包括一置放在鐘罩形製程爐管(bell jar-shaped process tube)周圍的加熱器。製程爐管的上端可以例如藉由圓頂形結構來閉合，而製程爐管的下端面可以是開放的。
額外地，可設置將爐管襯底(lining)的襯件(liner)。介於襯件與製程爐管之間可以是小型周向空間。襯件可以是閉合的襯件，其在上端處閉合，且下端可被一凸緣部分地閉合。由襯件及凸緣所界定的內部空間形成製程室，在此製程室中可處理待處置的晶圓。凸緣可具備用於將一承載晶圓的晶圓晶舟插入至內部空間中的入口開口。晶圓晶舟可放置在門上，此門可垂直移動地配置且配置以在凸緣中關閉入口開口。
凸緣可支撐複數個氣體注入器，以提供氣體至內部空間。額外地，可設置氣體排放管。此氣體排放管可連接至真空泵，用於從內部空間抽出氣體。在内部空間中由注入器所提供之氣體可以是用於在晶圓上之沉積反應的反應（製程）氣體。此反應氣體亦可沉積在除晶圓外的其他表面上，例如其可沉積在垂直爐內的注入器之中或之上。由這些沉積物所建立的層可能引起注入器的受到嚴重打擊甚至破裂。
一種經改善的基板處理設備，包含： 一爐管； 一閉合襯件，係配置以襯底此爐管之内表面，且在一下端處具備一襯件開口，並在此襯件開口上方對於氣體實質上閉合； 複數個氣體注入器，用以將一氣體提供至此閉合襯件之一内部空間； 一氣體排放管，用以從此內部空間移除氣體；以及， 一晶舟，經構造及配置以可經由此襯件開口移動至此内部空間中且具備複數個基板固持器，此複數個基板固持器用於在此内部空間中跨基板支撐長度固持複數個基板。此等氣體注入器可在頂部處具有單一出口開口。此複數個注入器之出口開口可跨此基板支撐長度實質上均等劃分。
本揭露之各種實施例可彼此分開應用或可組合。本揭露之實施例將進一步在實施方式中參照圖式中所示的一些實例闡明。
在本申請案中，類似或對應的特徵係由類似或對應的元件符號表示。各種實施例的描述並未受限於圖式中所示的實例及實施方式中所用的元件符號，且申請專利範圍並非意欲限制針對圖式中所示之實例的描述。
第1圖顯示根據一實施例之基板處理設備的一部分的剖視圖。基板處理設備可包含： 爐管TB； 閉合襯件CL，其係配置以襯底爐管TB之内表面，且在下端處具備襯件開口LO，並在襯件開口上方對於氣體實質上閉合； 晶舟BT，其經構造及配置以經由襯件開口可移動至內部空間中，且具備複數個基板固持器，此複數個基板固持器用於在內部空間中跨一基板支撐長度L0固持複數個基板W； 複數個氣體注入器I1至I3，其用以將氣體提供至閉合襯件CL之内部空間；及， 氣體排放管GX，其用以從內部空間移除氣體。閉合襯件CL可包含實質上圓柱狀壁CW，此壁由在下端處的襯件開口LO及在較高端處的頂部閉合件來定界。閉合襯件CL可在襯件開口LO上方對於氣體實質上閉合。
複數個注入器之氣體注入器I1至I3可在頂部處具有單一出口開口O1至O3。複數個注入器之氣體注入器I1至I3可沿著注入器的長度實質上閉合，除了頂部處作用為氣體出口之單一出口開口O1至O3。複數個注入器之氣體注入器I1至I3可具備氣體入口，其中僅描繪注入器I3的氣體入口GE3。與沿著其長度具有複數個作用為氣體出口的注入器相較，在頂部處具備作用為氣體出口之單一出口開口的氣體注入器可以是較堅固的。
氣體注入器I1至I3可具有不同的長度L1至L3。複數個注入器之最長注入器I3可延伸至靠近閉合襯件CL之頂部閉合件TC。複數個注入器之最長者可延伸至襯件CL之頂部閉合件TC的1公分至20公分內。複數個氣體注入器之氣體注入器I1至I3中之各者可具有不同的長度，使得注入器中之各者的單一出口開口在不同的高度處將氣體排放至内部空間中。
基板處理設備可具備一凸緣FL，其用以至少支撐襯件CL，且配置以至少部分地關閉襯件開口LO。排放件EX可設於靠近襯件開口LO處，舉例而言排放件EX可靠近襯件開口LO設於凸緣FL中，以從内部空間移除氣體，用以在内部空間中建立一向下流動。
凸緣FL可包含入口開口IO，其配置以至或以自閉合襯件CL的內部空間轉移晶舟BT，晶舟BT配置以跨基板支撐長度固持複數個基板W。複數個注入器I1至I3之一部分的開口可跨晶舟BT之基板支撐長度L0實質上均等劃分。因此，注入器I1、I2、I3中之各者的單一出口開口在不同的高度處將氣體排放至內部空間中給晶舟BT中的基板W。
晶舟BT可經構造及配置以在垂直方向上延伸至反應室中，且可具備複數個基板固持器，其用於垂直跨基板支撐長度L0而水平地固持複數個基板至反應室中。設備可具有N個注入器，舉例而言，2個、3個、4個、5個或6個。
N個注入器中之最長注入器L3可沿著複數個基板W延伸至反應室中跨距離L3，距離L3等於0.6至1乘以基板支撐長度L0。N個注入器中之最短注入器I1可沿著複數個基板延伸至反應室中跨距離L1，距離L等於0.1至0.4乘以基板支撐長度L0。N個注入器中既不是最長也不是最短的注入器I2可沿著複數個基板延伸至反應室中跨距離L2，距離L2等於0.3至0.7乘以基板支撐長度L0。因此，注入器中之各者的單一出口開口在不同高度處將氣體排放至內部空間中給晶舟BT中之基板W。因此，複數個注入器之出口開口可跨基板支撐長度L0實質上均等劃分，其有助於將製程氣體均勻地跨晶舟BT散佈。此有助於在晶舟BT跨基板支撐長度L0支撐的基板上實質上均勻地沉積層。流動藉由個別注入器之製程氣體之流動的小幅度調整可用以進一步最佳化均勻性。
對用於處理具有200毫米直徑之晶圓的基板處理設備，基板支撐長度H0可介於40公分與90公分之間，較佳地介於50公分與80公分之間，且最佳地為約略60公分。對用於處理具有300毫米直徑之晶圓的基板處理設備，基板支撐長度H0可介於60公分與150公分之間，較佳地介於80公分與130公分之間，較佳地為約略90公分或120公分。
第2圖示意地顯示根據一進一步實施例之基板處理設備之一部分的視圖。第2圖顯示注入器I1、I2和I3的長度L1、L2和L3與晶舟BT中的基板支撐長度L0之間的關係。氣體注入器I1、I2和I3中之各者在頂部處具有單一出口開口O1、O2和O3。複數個N個注入器之出口開口O1、O2及O3跨基板支撐長度L0實質上均等劃分。晶舟BT可經構造且配置以在垂直方向上延伸至襯件CL之内部空間中。晶舟可具備用於在内部空間及設備中垂直跨基板支撐長度L0水平地固持複數個基板的複數個（40個至180個）基板固持器。
N個注入器中之最長注入器可沿著複數個基板延伸跨距離L3，距離L3介於（1-1/N）至1乘以基板支撐長度L0之間。在n係3之第2圖的實例中，此將使注入器I3具有介於2/3與1乘以基板支撐長度L0之間的長度L3，長度L3較佳地約略係5/6的基板支撐長度L0。
N個注入器中的最短注入器可沿著複數個基板延伸跨距離L1，距離L1在介於0至1/N乘以基板支撐長度L0之間。在n係3之第2圖的實例中，此將使注入器I1具有介於0與1/3乘以基板支撐長度L0之間的長度L1，長度L1較佳地約略係1/6的基板支撐長度L0。
N個注入器中既不是最長也不是最短的注入器可沿著複數個基板延伸跨一距離，此距離等於1/N至（1-1/N）乘以基板支撐長度L0。在n係3之第2圖的實例中，此將使注入器I2具有介於1/3與2/3乘以L0基板支撐長度之間的長度L2，長度L2較佳地約略係3/6的L0基板支撐長度。
在注入器I1具有介於0與1/3乘以基板支撐長度L0之間的長度L1，注入器I2具有介於1/3與2/3乘以基板支撐長度L0之間的長度L2，且注入器I3具有介於2/3與1乘以基板支撐長度L0之間的長度L3時，可確保複數個注入器之出口開口可跨基板支撐長度L0實質上均等劃分。因此，製程氣體可實質上均勻地跨晶舟BT散佈。將製程氣體均勻地跨晶舟BT散佈，有助於在晶舟BT跨基板支撐長度L0所支撐的基板上均勻沉積。流動藉由個別注入器之製程氣體之流動的小幅度調整可用以進一步最佳化均勻性。
返回第1圖，基板處理設備可具備配置以在凸緣FL中關閉入口開口IO的垂直可移動門DR。門DR可配置以支撐晶舟BT。在注入器I1至I3中之一者內裡的氣體傳導通道的水平內剖面面積可介於100平方毫米與1500平方毫米之間。
在此注入器I1至I3內裡之一氣體傳導通道的水平內剖面具有一形狀，此形狀在與實質上圓柱狀的此襯件CL之與圓周相切之方向上的尺寸大於在徑向上的尺寸。基板處理設備可進一步包含用於容納矽前驅物且可操作地連接至注入器I1至I3之容器，以在内部空間中提供作為氣體的矽前驅物。設備可包含一流量控制器，用以對複數個氣體注入器I1至I3中之各者調整氣體之流動速度，以改善均勻性。舉例而言，給予較短的注入器相較於較長注入器更高的流動速度。
基板處理設備可包含圍繞爐管TB且配置以加熱爐管之內部的加熱器。爐管TB可以是低壓製程爐管。
可設置凸緣FL以至少部分地閉合低爐管TB的開口。垂直且可移動地配置的門DR可配置以在凸緣3中關閉中心入口開口IO，而且可配置以支撐一配置以固持基板W的晶圓晶舟B。凸緣3可部分地閉合製程爐管TB的開口端。門DR可具備基座PD。基座PD可經旋轉以讓在內部空間中的晶圓晶舟BT旋轉。在晶舟B中的最低基板之下可設置流動空間，以防止反應氣體在晶舟BT中基板W之間的流動。
氣體排放件GX可經構造及配置用於從内部空間移除氣體，且可經構造及配置在注入器下方。藉由在襯件開口LO上方對於氣體閉合襯件CL，藉由在內部空間上端處的注入器開口O1至O3用注入器I1至I3提供氣體至內部空間，並且藉由內部空間的下端處的氣體排放件GX從內部空間移除氣體，可建立在閉合的襯件CL之內部空間中的向下流動。此向下流動可將來自基板W、晶舟B、襯件CL、及/或支撐凸緣FL之產物及粒子的污染或反應向下輸送至氣體排放件GX遠離經處理基板W。
用於從內部空間I移除氣體的氣體排放件GX可設置在閉合襯件CL的開口端下方。既然製程室的污染源可能由閉合襯件CL與凸緣FL之間的接觸形成，此可以是有益的。更具體地，此源可能存在於開口端處的閉合襯件CL的下端面接觸凸緣FL的位置處。在處理基板W期間，特別是在處理後的晶舟BT之卸載期間，閉合襯件CL及凸緣FL可能經受會增加閉合襯件CL及凸緣FL兩者的溫度之熱。由於溫度增加，閉合襯件CL及凸緣FL可能經歷熱膨脹，其引起它們徑向膨脹。因閉合襯件CL與凸緣FL可能具有不同的熱膨脹係數（因為例如閉合襯件CL可能由碳化矽製成，而凸緣FL可能由金屬製成），閉合襯件CL及凸緣FL可能在膨脹期間相對於彼此移動。這可能引起閉合襯件CL的下端面與凸緣FL的上表面之間的摩擦，其可導致污染物（例如，小顆粒）從閉合襯件CL及/或凸緣FL脫離。顆粒可能徙移到製程室中，並可能污染製程室和正在處理的基板。
藉由在襯件開口上方對於氣體閉合此閉合襯件，用襯件開口上方的注入器之單一出口開口提供製程氣體至內部空間，並藉由襯件開口下方的氣體排放件GX從內部空間移除氣體，可建立內部空間中的向下流動。此向下流動可將顆粒從襯件與凸緣界面向下輸送到排放件而遠離經處理基板W。
既然可能必須相對於爐管TB內裡的低壓而補償大氣壓力，可將爐管TB以壓縮強度相對強的材料製成相當厚。舉例而言，低壓製程爐管TB可用毫米5至8毫米、較佳地約略6毫米厚的石英製成。石英具有0.59×10 -6K -1之非常低的熱膨脹係數（Coefficient of Thermal Expansion，CTE）（參見表1），使其更容易應對設備中的熱波動。雖然沉積材料的CTE可以是更高的（例如，Si3N4的熱膨脹係數＝3×10 -6K -1，Si的熱膨脹係數＝2.3×10 -6K -1），差值可以是相對小的。然而，在將膜沉積至以石英製成的爐管上時，即使爐管經受許多大型熱循環，膜仍然可黏附，可能會增加污染風險。
閉合襯件CL可規避爐管TB之內裡上的任何沉積，且因此可減輕爐管TB上之沉積的掉落風險。因此，爐管TB可由石英製成。
碳化矽的閉合襯件CL（SiC的熱膨脹係數＝4×10 -6K -1）可在沉積膜與閉合襯件之間提供CTE的良好匹配，導致在可能需要從襯件移除沉積膜之前的更大積聚厚度。CTE的不匹配導致沉積膜的開裂及剝離以及對應的高粒子數，其係不想要的並可藉由使用SIC襯件CL來減輕。相同的機制可針對注入器I1至I3運作，然而，若此等注入器中沉積太多具不同熱膨脹的材料，則其可能破裂。因此，可以是有利的是以碳化矽或矽製造注入器I1至I3。替代地，注入器可由石英製成。 表1 半導體處理中的材料熱膨脹係數（CTE）
材料 熱膨脹（ppm/K）
石英(Quartz) 0.59
氮化矽(Silicon nitride) 3
矽(Silicon) 2.3
碳化矽(Silicon carbide) 4.0
鎢(Tungsten) 4.5
材料是否適於襯件CL及/或注入器I1至I3可取決於所沉積的材料。因此，有利的是能夠針對沉積材料和針對襯件CL及/或注入器I1至I3使用具實質上相同的熱膨脹之材料。因此，可以是有利的是能夠使用針對襯件CL及/或注入器I1至I3的熱膨脹相對高於石英之熱膨脹的材料。舉例而言，可使用碳化矽SiC。既然不須補償大氣壓力，碳化矽襯件可以是介於4毫米至6毫米之間、較佳地5毫米厚。可用爐管TB來實現壓力補償。
對沉積具介於約4×10 -6K -1與6×10 -6K -1之間的熱膨脹係數之金屬及金屬化合物材料（諸如TaN、HfO2、及TaO5）的系統而言，襯件及注入器的材料較佳地可具有介於約4×10 -6K -1與9×10 -6K -1之間的熱膨脹係數（包括例如碳化矽）。
對具甚至更高的熱膨脹係數之材料的沉積而言，閉合襯件CL及/或用於注入器I1至I3的材料可選擇為舉例而言由表2所描繪者。 表2 陶瓷構造材料的熱膨脹係數（CTE）
材料 熱膨脹（ppm/K）
可加工陶瓷(Macor) 12.6
氮化硼(Boron Nitride) 11.9
普通玻璃(Glass, ordinary) 9
莫來石(Mullite) 5.4
凸緣FL可具備凹槽，凹槽經構造及配置以用於在其中設置諸如O型環OR的密封件，以在凸緣FL和爐管TB之間提供良好的密封。此良好密封係必要的，因為凸緣FL、爐管TB及O型環OR可以在外部大氣壓力與爐管TB內裡的低壓之間形成壓力屏障的一部分。O型環OR可設於石英的界面處，因為石英具有相對低的熱膨脹，所以石英相對於O型環沒有太多可能引起O型環OR磨損的移動。不同的O型環可在凸緣FL之間和凸緣FL與門DR之間使用。
降低注入器壓力可能導致注入器內的反應速率降低，因為反應速率典型地隨增加的壓力而增加。注入器內裡的低壓之一額外優點在於通過注入器之氣體體積在低壓下膨脹，且對恆定的源氣體流動而言，源氣體在注入器內裡的駐留時間(residence time)對應地減少。因為兩者的組合，可減少源氣體的分解，由此亦可減少注入器內的沉積。
注入器內的沉積可在溫度變化時引起注入器中的抗拉強度(tensile strength)，引起注入器破裂。因此，注入器內的較少沉積延長了注入器的壽命。注入器可由具有藉由製程氣體所沉積材料的熱膨脹係數之材料製成。舉例而言，如果藉由製程氣體沉積氮化矽，則氣體注入器可由氮化矽製成，或者如果藉由製程氣體沉積矽，則氣體注入器可由矽製成。因此，注入器內的沉積層的熱膨脹可匹配注入器的熱膨脹，從而降低氣體注入器在溫度變化期間可能破裂的機率。碳化矽可以是用於注入器的合適材料，因為它具有可與許多沉積材料匹配的熱膨脹。
為了促進注入器內裡的源氣體沿著注入器的長度方向流動，注入器可具備大的內剖面。為了在反應空間內裡能夠收容根據本揭露的注入器，注入器的切向大小可較大於徑向大小，而且定界反應空間的襯件可具備向外延伸的凸起部以收容注入器。
在一實施例中，提供二元膜之兩構成元素的兩源氣體在進入注入器之前係在氣體供應系統中混合。此可以是確保所注入氣體跨晶舟BT長度之均質組成的最簡單方式。然而，此並非必需的。替代地，可經由分開的注入器注入兩個不同的源氣體，並且在注入反應空間中之後混合。
對複數個注入器I使用複數個流量控制器允許一些氣體流動的調諧可能性。後者可以是必要以微調跨晶舟BT的基板W上的沉積速率均勻性。流量速率可調整至介於50每分鐘標準毫升數(sccm)與1000每分鐘標準毫升數之間的值。
雖然上文已描述具體實施例，將理解，本揭露可用有別於所述方式實踐。上文之描述係意欲闡釋而非限制。因此，所屬技術領域中具有通常知識者將明白，可在不偏離下文陳述的申請專利範圍之範疇的情況下，對前文中所述的本揭露作出修改。各種實施例可組合應用或可彼此獨立地應用。
BT:晶舟 CL:閉合襯件 CW:圓柱狀壁 DR:門 FL:凸緣 GE3:氣體入口 GX:氣體排放管 H0:基板支撐長度 I1,I2,I3:氣體注入器 IO:入口開口 L0:基板支撐長度 L1,L2,L3:長度 LO:下端襯件開口 O1,O2,O3:出口開口 OR:O型環 PD:基座 TB:爐管 TC:頂部閉合件 W:基板
應明白，圖式中的元件是為了簡化和清楚而繪示，且不必然按比例繪出。舉例而言，圖式中之一些元件的尺寸可能相對於其他元件而特別放大，以幫助改善對所繪示本揭露實施例的理解。 第1圖顯示根據一實施例之基板處理設備的一部分的剖視圖；及， 第2圖示意地顯示根據一進一步實施例之基板處理設備之一部分的視圖。
BT:晶舟
CL:閉合襯件
CW:圓柱狀壁
DR:門
FL:凸緣
GE3:氣體入口
GX:氣體排放管
H0:基板支撐長度
I1,I2,I3:氣體注入器
IO:入口開口
L0:基板支撐長度
L1,L2,L3:長度
LO:下端襯件開口
O1,O2,O3:出口開口
OR:O型環
PD:基座
TB:爐管
TC:頂部閉合件
W:基板

Claims (15)

  1. 一種基板處理設備，包括： 一爐管； 一閉合襯件，配置以襯底該爐管之内表面，且在一下端處具備一襯件開口，並在該襯件開口上方對於氣體實質上閉合； 複數個氣體注入器，用以將一氣體提供至該閉合襯件之一内部空間； 一氣體排放管，用以從該內部空間移除氣體；及， 一晶舟，經構造及配置以經由該襯件開口可移動至該内部空間中，並具備複數個基板固持器，該等基板固持器用於在該內部空間中跨一基板支撐長度固持複數個基板，其中該等氣體注入器中之各者在頂部處具有單一出口開口，且該等注入器之該等出口開口再跨該基板支撐長度上實質上均等劃分。
  2. 如請求項1之基板處理設備，其中該晶舟經構造且配置以在垂直方向上延伸至該内部空間中且具備複數個基板固持器，該等基板固持器用於在該内部空間中垂直跨該基板支撐長度L0而水平固持該等基板，且該設備具有N個注入器。
  3. 如請求項2之基板處理設備，其中該N個注入器之最長注入器沿著該等基板延伸至該內部空間中跨一距離L3，該距離L3介於（1-1/N）至1乘以該基板支撐長度L0之間。
  4. 如請求項2之基板處理設備，其中該N個注入器的最短注入器沿著該等基板延伸至該內部空間中跨一距離L1，該距離L1介於0至1/N乘以該基板支撐長度L0之間。
  5. 如請求項2之基板處理設備，其中該N個注入器中既不是最長也不是最短的一注入器沿著該等基板延伸至該內部空間中跨一距離，該距離等於1/N到（1-1/N）乘以該基板支撐長度L0。
  6. 如請求項1之基板處理設備，其中該基板處理設備具備一凸緣以至少支撐該襯件，且該凸緣配置以至少部分關閉該襯件開口，且該排放管靠近該襯件開口設於該凸緣中，以自該内部空間移除氣體，用以在該内部空間中建立一向下流動。
  7. 如請求項6之基板處理設備，其中該凸緣包括： 一入口開口，配置以插入及移除該晶舟，該晶舟配置以在該襯件的該內部空間中或自該襯件的該內部空間承載該等基板。
  8. 如請求項6之基板處理設備，其中該基板處理設備具備一垂直可移動門，該垂直可移動門配置以在該凸緣中關閉該入口開口，並配置以支撐該晶舟。
  9. 如請求項1之基板處理設備，其中在該等注入器內裡之一氣體傳導通道的水平內剖面具有一形狀，該形狀在與實質上圓柱狀的該襯件之與圓周相切之方向上的尺寸大於在徑向上的尺寸。
  10. 如請求項9之基板處理設備，其中在該等注入器內裡之一氣體傳導通道的水平內剖面面積係介於100平方毫米與1500平方毫米之間。
  11. 如請求項1之基板處理設備，更包括用於容納矽前驅物且可操作地連接至該等注入器的一容器，以在該内部空間中提供作為氣體的該矽前驅物。
  12. 如請求項1之基板處理設備，其中該設備包括複數個流量控制器，以對該等氣體注入器中之各者調整氣體之流動速度。
  13. 如請求項1之基板處理設備，其中該等注入器係由矽、碳化矽或氧化矽所構造。
  14. 如請求項1之基板處理設備，其中該等氣體注入器包括三個注入器。
  15. 如請求項1之基板處理設備，其中該等注入器的該等單一出口開口經構造及配置在該襯件開口上方，且該氣體排放件經構造及配置在該襯件開口下方。
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