TW202219303A - 薄膜沉積製程 - Google Patents

薄膜沉積製程 Download PDF

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TW202219303A
TW202219303A TW110126896A TW110126896A TW202219303A TW 202219303 A TW202219303 A TW 202219303A TW 110126896 A TW110126896 A TW 110126896A TW 110126896 A TW110126896 A TW 110126896A TW 202219303 A TW202219303 A TW 202219303A
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gas
chamber
substrate
feeding
source gas
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TW110126896A
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井上尚樹
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/325—Silicon carbide
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01—ELECTRIC ELEMENTS
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
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  • Chemical Vapour Deposition (AREA)

Abstract

本揭露提供一種允許高精度控制沉積在基板上之薄膜的平面內分佈之薄膜沉積製程。此製程係藉由原子層沉積（ALD）在腔室中之基板上沉積薄膜之製程，其包括重複此沉積循環以在此基板上沉積薄膜。此沉積循環包括下列步驟：將一反應氣體和一載氣饋送到此腔室，並將降低濃度的一源氣體饋送到此腔室，以允許此源氣體吸附於此基板上；將此反應氣體和此源氣體饋送到此腔室，以允許此源氣體吸附於此基板上；將此反應氣體和此載氣饋送到此腔室，以從腔室吹驅未吸附於此基板上的此源氣體；向此腔室施加射頻功率以使此反應氣體轉變成電漿，使得經電漿活化之此源氣體係允許接觸基板之一表面；及將此反應氣體和此載氣饋送到此腔室，以從腔室吹驅殘留未反應的源氣體和反應氣體。

Description

薄膜沉積製程
本揭露係關於一種薄膜沉積製程。
一種原子層沉積（Atomic Layer Deposition，ALD）製程係有關於控制薄膜沉積在諸如晶圓之類基板上的平面內分佈（in-plane distribution）。一種用於控制薄膜的平面內分佈之方法包括調整參數，諸如源輸入（Source input）、氣體流動速率比、射頻（RF）功率及藉由化學氣相沉積（Chemical Vapor Deposition，CVD）製程中控制源吹驅（purge）時間之干涉。
然而，即使調整過這些參數，仍然難以採取較高精度控制薄膜的平面內分佈。因此，需要高精度控制薄膜沉積在基板上的平面內分佈。
本揭露之一態樣係關於藉由原子層沉積（ALD）在腔室中之基板上沉積薄膜之製程，此製程包括重複一沉積循環以將薄膜沉積於基板上。此沉積循環包括下列步驟：將一反應氣體及一載氣饋送到此腔室，並將一降低濃度的源氣體饋送到此腔室，以允許此源氣體吸附於此基板上；將此反應氣體及此源氣體饋送到此腔室，以允許此源氣體吸附於此基板上；將此反應氣體及此載氣饋送到此腔室，以從腔室吹驅未吸附於基板上的源氣體；向此腔室施加射頻功率以使此反應氣體轉變成電漿，使得經電漿活化之此源氣體允許接觸基板的表面；及將此反應氣體及此載氣饋送到此腔室，以從腔室吹驅殘留未反應之源氣體及殘留未反應之反應氣體。
本揭露允許高精度控制薄膜沉積在基板上之平面內分佈。
以下，將參照圖式詳細說明本揭露之特定實施例。應瞭解，以下實施例並非要限制本揭露，且在不悖離本揭露之意義下，可採取各種方式進行改變或修飾。
＜薄膜沉積裝置＞
雖然可根據一實施例在膜沉積製程中使用任何類型的薄膜沉積裝置，但是可具體使用第1圖所示之薄膜沉積裝置。
第1圖為示意性顯示根據一實施例之薄膜沉積裝置1的垂直剖視圖。第1圖所示的薄膜沉積裝置1係配置以藉由電漿增強型原子層沉積（Plasma Enhanced Atomic Layer Deposition，PEALD）在諸如半導體晶圓W之類的基板W上沉積薄膜。
薄膜沉積裝置1包括一開頂和底閉式實質圓柱形腔室10及一設置在此腔室10內的載置台12，且此載置台上載置一基板W。
腔室10透過一接地導體（未示出）電接地。例如，此腔室10具有一內壁，此內壁的表面塗覆一利用抗電漿材料製成的塗層（未示出）。
載置台12係利用諸如鋁合金之類的金屬材料製成。載置台12的底部是由一利用導電材料製成的支撐構件13所支撐並電性連接。支撐構件13係電性連接到腔室10的底表面。因此，載置台12係透過腔室10接地並用作一下電極，此下電極係與用作一上電極的供氣裝置14配對。載置台12具有一內置加熱器（未示出），其係配置以將載置台12上的基板W加熱到一所需溫度。
在此裝置中，在用作一下電極的載置台12和用作一上電極的供氣裝置14之間提供距離D。所述距離D可在載置台12和供氣裝置14之間能夠產生電漿的範圍內，例如，在7毫米（mm）至15毫米的範圍內。
支撐構件13的下部透過設置在腔室10之底部中心處的一插入孔11向下延伸。支撐構件13可藉由一升降此載置台12的升降機構（未示出）而垂直移動。
在載置台12下方，複數個支承銷（未示出）設置在腔室10內，且載置台12具有用於接受多個支承銷的多個插入孔（未示出）。當載置台12下降時，此等支承銷穿過載置台12中的此等插入孔，以用其上端支撐基板W，使得基板W可轉移到一自外部進入腔室10的轉移臂（未示出）。
在載置台12上方，供氣裝置14係平行設置於且面向此載置台12。換言之，供氣裝置14係設置成面向安裝在載置台12上的基板W。供氣裝置14係配置以饋送用於處理基板W之製程氣體。例如，供氣裝置14係利用諸如鋁合金之類的導電金屬所製成，其亦可用作一上電極。
供氣裝置14之上周邊部分是由一環形支撐構件16固持。支撐構件16係利用諸如石英之類的絕緣材料製成。供氣裝置14和腔室10係彼此電性隔離（electrically isolated）。一加熱器（未圖示）亦可設置於供氣裝置14的上表面之上。
供氣裝置14係透過腔室1外部的氣體饋送管L1、L2、L3和L4連接到一反應氣體供給源（未示出）、一載氣供給源（未示出）和一貯存槽19。一源氣體、一反應氣體和一載氣係饋送到供氣裝置14，然後採用類似一噴灑頭方式透過供氣孔15引入腔室10中。
在薄膜沉積裝置1的外部部分中，氣體饋送管L1、L2、L3和L4具有閥V1、V2、V3、V4和V5及其他組件，諸如質量流量控制器（未圖示），其允許控制用於饋送製程氣體的條件，諸如氣體類型、氣體混合比率及流動速率。具體而言，氣體饋送管L1具有閥V1，氣體饋送管L2具有閥V2和V3，氣體饋送管L3具有閥V4，且氣體饋送管L4具有閥V5。此等閥V3、V4和V5亦分別稱為通路開關（pass switch，PS）閥、入口閥（inlet valve）及出口閥（outlet valve）。
貯存槽19包含一源氣體前驅物。貯存槽19經由氣體饋送管L2、L3和L4連接到腔室10。氣體饋送管L2連接到氣體饋送管L3和L4。氣體饋送管L3經由貯存槽19連接到氣體饋送管L4。氣體饋送管L3係連接於氣體饋送管L2中閥V3的上游。氣體饋送管L4係連接於氣體饋送管L2中閥V3的下游。當僅饋送載氣時，閥V3在閥V4和V5關閉時打開，且載氣經由氣體饋送管L2和閥V3饋送到腔室10。當饋送載氣及源氣體時，閥V3在閥V4和V5打開時關閉，且載氣和源氣體經由氣體饋送管L2、L3和L4及閥V4和V5饋送到腔室10。
此供氣裝置14亦用作一上電極。供氣裝置14經由一匹配器以電性連接到一高頻電源17。高頻電源17提供用於生成電漿的高頻率功率。高頻電源17係配置以輸出例如具有100千赫（kHz）至100百萬赫（MHz）之頻率的高頻功率。提供的匹配器以匹配高頻電源的内部和負載阻抗（load impedances）。當在腔室10中生成電漿時，匹配器作用成提供高頻電源之内部阻抗與負載阻抗之間的明顯匹配。
此腔室10亦連接到一排氣系統18，其配置以抽空此腔室10的內部。當驅動此排氣系統18時，排空此腔室10中之大氣，使得壓力減小到一預定真空程度。
沉積裝置1包括經編程或配置以執行沉積製程的一或多個控制器（未圖示）。熟習此項技藝者將瞭解，一或多個控制器係連接到含有所述電源、一加熱系統、多個幫浦、所述腔室、多個質量流量控制器及多個閥之組件。
[基板製備]
對於沉積薄膜，首先，將基板W引入腔室10的内部並安置在載置台12上。基板W可為（但不限於）一矽基板或一鍺基板。可使用一晶圓搬送腔室（Load lock chamber）（未圖示）或其他構件在真空下將基板W引入腔室10的內部。
加熱器用於加熱在載置台12上的基板W。例如，基板W可加熱在50°C至500°C之範圍內溫度。加熱期間，一載氣饋送入腔室10中。
例如，此載氣可為選自由氦（He）氣體、氬（Ar）氣體及氫（H 2）氣體所組成群組之一或多者。在饋送期間，腔室10中之壓力通常至少50帕（Pa）或更大，最好300帕或更大，且通常至多1,300帕或更小，最好1,000帕或更小。當饋送載氣時，亦可饋送稍後所描述之反應氣體。
[沉積循環]
第2圖為顯示有關一實施例之原子層沉積製程序列的圖式。第2圖所示之原子層沉積製程序列包括一習知序列（當前序列）及一根據實施例（新序列）之序列。
此沉積循環包括一吹驅和源饋送步驟、一源氣體饋送步驟、一吹驅步驟、一電漿接觸步驟及一後吹驅（Post purge）步驟。在整個沉積循環之多個步驟期間，反應氣體和載氣係連續饋送入腔室10中。
視針對性的薄膜厚度、組成物和品質而定，可依需要重複此沉積循環多次，不過重複並非必要。根據一實施例之順序係不同於習知序列，尤其包括吹驅和源饋送步驟。以下，將詳細描述此沉積循環的每個步驟。
[吹驅和源饋送步驟]
首先，當一反應氣體和一載氣饋送到此腔室10時，一源氣體以降低的濃度饋送到此腔室10。因此，源氣體係允許吸附於基板W。第3A圖為顯示吹驅和源饋送步驟中的氣體流動之示意圖。如第3A圖所示，閥V1係打開，使得此反應氣體經由氣體饋送管L1饋送到腔室10。閥V2、V3、V4和V5亦打開，使得載氣經由氣體饋送管L2、L3和L4饋送到腔室10。貯存槽19中的源氣體是由載氣所承載，此載氣流過氣體饋送管L3，並經由氣體饋送管L4和L2饋送到腔室10。
在此步驟中，由於閥V3、V4和V5係打開，因此源氣體係用載氣稀釋並隨後饋送到腔室10。饋送到腔室10之所稀釋源氣體的濃度低於稍後所描述源氣體饋送步驟中所要饋送源氣體的濃度。
在此步驟中，此源氣體可為在電漿激發原子層沉積（Plasma-excited Atomic Layer Deposition，PEALD）中使用的材料，最好是氨基矽烷（aminosilane），更好是選自以下所組成群組之一或多者：雙（二乙基氨基）矽烷（bis(diethylamino)silane，BDEAS）、二異丙基氨基矽烷（diisopropylaminosilane，DIPAS）、四（二甲基氨基）矽烷（tetrakis(dimethylamino)silane，4DMAS）、三（二甲氨基）矽烷（tris(dimethylamino)silane，3DMAS）、雙（二甲基氨基）矽烷（bis(dimethylamino)silane，2DMAS）、四（乙基甲基氨基）矽烷（tetrakis(ethylmethylamino)silane，4EMAS）、三（乙基甲基氨基）矽烷（tris(ethylmethylamino)silane，3EMAS）、雙（叔丁基氨基）矽烷（bis(tert-butylamino)silane，BTBAS）和雙（乙基甲基氨基）矽烷（bis(ethylmethylamino)silane，BEMAS）。
反應氣體可為在氣體成分之電漿存在下能夠與源氣體起反應的氣體。更明確言之，所述反應氣體最好為選自以下所組成群組之一或多者：氧（O 2）氣體、一氧化二氮 （N 2O）氣體、二氧化碳（CO 2）氣體、氮（N 2）氣體和氨（NH 3）氣體。
所述供應到腔室10的反應氣體可具有約50每分鐘標準毫升（sccm）或更高，最好至少3,000每分鐘標準毫升或更大的流動速率，並可具有至多10,000每分鐘標準毫升或更小，最好6,000每分鐘標準毫升或更小的流動速率。
所述供饋送到腔室10的載氣和源氣體可具有約500每分鐘標準毫升或更大，最好至少2,000每分鐘標準毫升或更大的流動速率，並可具有至多10,000每分鐘標準毫升或更小，最好5,000每分鐘標準毫升或更小的流動速率。
源氣體可連同載氣一起饋送持續例如0.05秒或更長、最好至少0.1秒或更大，且至多10秒或更小，最好5秒或更小的時段。
吹驅和源饋送步驟可在源氣體饋送步驟之前或之後執行。根據前述一實施例之序列包括執行吹驅和源饋送步驟一次，並執行源氣體饋送步驟一次。或者，可執行吹驅和源饋送步驟及源氣體饋送步驟之每一者兩或多次。
[源氣體饋送步驟]
然後，反應氣體和源氣體饋送入腔室10中。第3B圖為顯示源氣體饋送步驟中的氣體流動之示意圖。如第3B圖所示，閥V1係打開，使得此反應氣體經由氣體饋送管L1饋送到腔室10。閥V2、V4和V5亦打開且閥V3關閉，使得源氣體經由氣體饋送管L2和L4饋送到腔室10。在吹驅和源饋送步驟與源氣體饋送步驟之間的切換通常藉由打開及關閉通路開關閥V3來進行。因此，源氣體係允許吸附於基板W上，使得一源氣體分子層形成於基板W之表面上。
連同載氣一起饋送到腔室10之源氣體可具有約500每分鐘標準毫升或更大、最好至少2,000每分鐘標準毫升或更大之流動速率，並可具有至多10,000每分鐘標準毫升或更低、最好5,000每分鐘標準毫升或更低之流動速率。源氣體可連同載氣一起饋送持續例如至少0.05秒或更大，最好0.1秒或更大，且至多10秒或更小，最好5秒或更小的時段。可基於源氣體類型、腔室10中之壓力及其他條件以選擇饋送源氣體之最佳時段。
[吹驅步驟]
在饋送源氣體之後，反應氣體和載氣饋送到腔室10，使得從腔室10吹驅不吸附於基板W上之源氣體。第3C圖為顯示吹驅步驟中的氣體流動之示意圖。如第3C圖所示，閥V1係打開，使得反應氣體經由氣體饋送管L1饋送到腔室10。閥V2和V3亦打開，且閥V4和V5關閉，使得載氣經由氣體饋送管L2饋送到腔室10。
此吹驅步驟使得可取得更平滑（smoother）的薄膜，因為其可減少薄膜受到殘留在大氣中之源氣體的污染。當不吸附於基板W上之源氣體以此方式從腔室10排出時，可由於減少薄膜受到殘留在腔室10之大氣中的源氣體污染而獲得更平滑的薄膜。具體而言，源氣體可以用於開始施加高頻功率之速率來吹驅，使得稍後所描述之電漿的生成及薄膜之電漿輔助沉積可平順執行。
[電漿接觸步驟]
然後，反應氣體和載氣饋送入腔室10中，且高頻功率施加於供氣裝置14，使得製程氣體中之反應氣體成分（能夠由電漿生成活化的氣體成分）轉變成電漿。電漿生成活化的反應氣體係允許接觸基板W的表面，使得此反應氣體成分係允許與吸附於基板W上的源氣體成分起反應。此使得即使基板W的表面具有三維結構，亦可在表面上沉積具有均勻厚度的薄膜。
更具體而言，當反應氣體和載氣饋送入腔室10時，此步驟可包括施加高頻功率以使含有反應氣體和載氣之一或兩者的反應氣體成分轉變成電漿；及允許由電漿生成活化之反應氣體成分接觸吸附於基板W上的源氣體成分，使得允許此反應氣體成分與此源氣體成分起反應。此使得在基板W的表面上沉積具有均勻厚度的薄膜是可能的。
[後吹驅步驟]
在形成一用於薄膜的單層（monolayer）之後，在反應氣體成分與源氣體成分之間的反應期間生成的副產物從腔室排出。在此步驟中，使用用於將反應氣體和載氣之至少一者饋送入腔室，以吹驅未吸附於基板上的源氣體成分之構件、用於排空此腔室10，以釋放源氣體成分或其組合之構件，將副產物從腔室排出。
[沉積具有所需厚度的薄膜]
副產物從腔室10的排放可接續重複一循環，此循環包括：允許此源氣體成分吸附於此基板W上；從此腔室10排放過量的源氣體成分；將含有此反應氣體的製程氣體饋送入腔室10 ；向此供氣裝置14施加高頻功率，使得此製程氣體中之此反應氣體成分轉變成電漿並允許與所述源氣體成分起反應以形成薄膜；及從腔室排放副產物。此使得可在基板W上沉積具有所需厚度的薄膜。所生成的薄膜可具有至少0.0001微米（μm）的厚度，其符合一單分子層的厚度，並可具有至多1微米或更小，最好0.1微米或更小的厚度。
在一實施例中，所生成的薄膜可為例如SiO 2薄膜、SiN薄膜或SiC薄膜。藉由電漿增強型原子層沉積（PEALD）對此一有用薄膜之沉積允許製造具有較高品質和可靠性的半導體元件。
實例
然後，將描述本揭露的實例，其並未要限制本揭露的範疇。第4圖為顯示藉由有關一實施例之薄膜沉積製程所獲得薄膜之分析結果的圖式。第4圖所示表格顯示具有不同通路開關閥V3關閉時間之每循環生長量（Growth Per Cycle，GPC） （埃（Å）/循環）、均勻度範圍/平均（uniformity range/average）（%）、中心/邊緣比率及水上之平面內分佈映射（mapping）（+/-0.25%）之多個結果。第4圖亦顯示通路開關閥門V3關閉時間和中心/邊緣比率之間的關係。
如前述，通常可藉由打開和關閉通路開關閥V3來執行吹驅和源饋送步驟與源氣體饋送步驟之間的切換。在多個實例中，執行吹驅及源饋送步驟，並隨後關閉通路開關閥V3，以從吹驅和源饋送步驟切換成源氣體饋送步驟。
第4圖指示當通路開關閥V3關閉時間延遲時，即是，當執行吹驅和源饋送步驟的時段增加時，每循環生長量減小，即是，每循環之原子層的厚度減小。
第4圖亦指示當通路開關閥V3關閉時間延遲時，均勻度範圍/平均值（%）及中心/邊緣比率兩者增加，且晶圓的中心和邊緣之間的薄膜厚度之差異增加。
此外，根據一實施例之薄膜沉積製程允許以+/- 0.25%的單位來控制晶圓上的平面內分佈映射，然而習知製程難以+/- 0.25%的單位來控制晶圓上的平面內分佈映射。如前所示，薄膜的平面內分佈係藉由以毫秒為單位來控制通路開關閥V3關閉時間而成功控制。
如前述，根據一實施例之薄膜沉積製程包括一沉積循環，此沉積循環包括一吹驅和源饋送步驟，其包括將一反應氣體及一載氣饋送到此腔室10，並將一降低濃度的源氣體饋送到此腔室10，以允許源氣體吸附於基板W上。當以此方式稀釋此源氣體時，源氣體可藉由利用源氣體吸附更可能發生於晶圓之中心區域的傾向（或源氣體吸附較不可能發生於晶圓之周邊部分的傾向）以稀釋所需時段。因此，根據一實施例之薄膜沉積製程允許高精度控制沉積在晶圓W上之薄膜的平面內分佈。
根據一實施例之薄膜沉積製程可消除在化學氣相沉積（CVD）製程中藉由不穩定控制源吹驅時間以使用干涉模式的需要，並使得可使用一現有原子層沉積系統來製造具有所需平面內分佈的薄膜。
此外，根據一實施例之薄膜沉積製程控制在原子層沉積大氣中之薄膜的平面內分佈，且因此達成非常穩定的製程。此外，根據一實施例之薄膜沉積製程可控制吹驅和源饋送步驟之持續時間和源氣體饋送步驟之持續時間，使得可更嚴格控制薄膜之平面內分佈。
雖然前面已描述本揭露之多個實施例，但將瞭解此等實施例並非要限制本揭露。將亦瞭解，在多個實施例中所示之有利效果僅是本揭露之最有利效果之實例，且並非要限制本揭露之有利效果。
1:薄膜沉積裝置 10:腔室 11:插入孔 12:載置台 13:支撐構件 14:供氣裝置 15:供氣孔 16:支撐構件 17:高頻電源 18:排氣系統 19:貯存槽 D:距離 L1,L2,L3,L4:氣體饋送管 V1,V2,V3,V4,V5:閥 W:半導體晶圓,基板
第1圖為示意性顯示根據一實施例之薄膜沉積裝置的垂直剖視圖； 第2圖為顯示有關一實施例之原子層沉積製程序列的圖式； 第3A圖為顯示在吹驅及源饋送步驟中的氣體流之示意圖； 第3B圖為顯示在源氣體饋送步驟中的氣體流之示意圖； 第3C圖為顯示在吹驅步驟中的氣體流之示意圖；以及 第4圖為顯示藉由有關一實施例之薄膜沉積製程所獲得薄膜量測結果的圖式。
1:薄膜沉積裝置
10:腔室
11:插入孔
12:載置台
13:支撐構件
14:供氣裝置
15:供氣孔
16:支撐構件
17:高頻電源
18:排氣系統
19:貯存槽
D:距離
L1,L2,L3,L4:氣體饋送管
V1,V2,V3,V4,V5:閥
W:半導體晶圓，基板

Claims (8)

  1. 一種藉由原子層沉積（ALD）在一腔室中之一基板上沉積一薄膜之製程， 該製程包含重複一沉積循環以在該基板上沉積該薄膜， 該沉積循環包含下列步驟： 將一反應氣體和一載氣饋送到該腔室，並將降低濃度的一源氣體饋送到該腔室，以允許該源氣體吸附於該基板上； 將該反應氣體和該源氣體饋送到該腔室，以允許該源氣體吸附於該基板上； 將該反應氣體和該載氣饋送到該腔室，以從該腔室吹驅未吸附於該基板上的該源氣體； 向該腔室施加射頻功率，以使該反應氣體轉變成一電漿，使得由該電漿活化之該源氣體係允許接觸該基板之一表面；以及 將該反應氣體和該載氣饋送到腔室，以從腔室吹驅殘留未反應的源氣體和殘留未反應的反應氣體。
  2. 如請求項1之製程，其中在將該反應氣體和該源氣體饋送到該腔室，以允許該源氣體吸附於該基板之該步驟之前，執行將該反應氣體和該載氣饋送到該腔室，並將降低濃度的該源氣體饋送到該腔室，以允許該源氣體吸附於該基板上之該步驟。
  3. 如請求項1之製程，其中在將該反應氣體和該源氣體饋送到該腔室，以允許該源氣體吸附於該基板之該步驟之後，執行將該反應氣體和該載氣饋送到該腔室，並將降低濃度的該源氣體饋送到該腔室，以允許該源氣體吸附於該基板上之該步驟。
  4. 如請求項1之製程，其中該反應物氣體係選自由一氧（O 2）氣體、一一氧化二氮（N 2O）氣體、一二氧化碳（CO 2）氣體、氮（N 2）氣體及一氨（NH 3）氣體所組成群組。
  5. 一如請求項1所述之製程，其中該載氣係選自由依氦（He）氣體、一氬（Ar）氣體及一氫（H 2）氣體所組成群組。
  6. 如請求項1之製程，其中該源氣體包含一胺基矽烷。
  7. 如請求項1之製程，其中該薄膜包含一SiO 2薄膜、一SiN薄膜、或一SiC薄膜。
  8. 如請求項1之製程，其中在達到一所需薄膜厚度之前，重複該沉積循環。
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