ATE109924T1 - Verfahren zum ätzen von halbleiterscheiben mit halogenid in gegenwart von wasser. - Google Patents

Verfahren zum ätzen von halbleiterscheiben mit halogenid in gegenwart von wasser.

Info

Publication number
ATE109924T1
ATE109924T1 AT90916827T AT90916827T ATE109924T1 AT E109924 T1 ATE109924 T1 AT E109924T1 AT 90916827 T AT90916827 T AT 90916827T AT 90916827 T AT90916827 T AT 90916827T AT E109924 T1 ATE109924 T1 AT E109924T1
Authority
AT
Austria
Prior art keywords
etching
water
reaction vessel
halogen
etching semiconductor
Prior art date
Application number
AT90916827T
Other languages
English (en)
Inventor
Johannes Franciscus Westendorp
Hans Willem Piekaar
Original Assignee
Asm Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Int filed Critical Asm Int
Application granted granted Critical
Publication of ATE109924T1 publication Critical patent/ATE109924T1/de

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching
AT90916827T 1989-11-03 1990-11-02 Verfahren zum ätzen von halbleiterscheiben mit halogenid in gegenwart von wasser. ATE109924T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43114989A 1989-11-03 1989-11-03

Publications (1)

Publication Number Publication Date
ATE109924T1 true ATE109924T1 (de) 1994-08-15

Family

ID=23710695

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90916827T ATE109924T1 (de) 1989-11-03 1990-11-02 Verfahren zum ätzen von halbleiterscheiben mit halogenid in gegenwart von wasser.

Country Status (7)

Country Link
US (1) US5167761A (de)
EP (1) EP0500670B1 (de)
JP (1) JP2941943B2 (de)
KR (1) KR0161674B1 (de)
AT (1) ATE109924T1 (de)
DE (1) DE69011529T2 (de)
WO (1) WO1991006975A1 (de)

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US5167761A (en) 1992-12-01
EP0500670B1 (de) 1994-08-10
JPH05504024A (ja) 1993-06-24
JP2941943B2 (ja) 1999-08-30
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WO1991006975A1 (en) 1991-05-16
EP0500670A1 (de) 1992-09-02

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