ATE113757T1 - Verfahren und vorrichtung zum entfernen von schichten von substraten. - Google Patents

Verfahren und vorrichtung zum entfernen von schichten von substraten.

Info

Publication number
ATE113757T1
ATE113757T1 AT86905535T AT86905535T ATE113757T1 AT E113757 T1 ATE113757 T1 AT E113757T1 AT 86905535 T AT86905535 T AT 86905535T AT 86905535 T AT86905535 T AT 86905535T AT E113757 T1 ATE113757 T1 AT E113757T1
Authority
AT
Austria
Prior art keywords
film
substrate
flow
over
reactive gas
Prior art date
Application number
AT86905535T
Other languages
English (en)
Inventor
Robert Stephan Blackwood
Rex Lee Biggerstaff
Luther Davis Clements
Cloves Rinn Cleavelin
Original Assignee
Fsi Int Inc
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fsi Int Inc, Texas Instruments Inc filed Critical Fsi Int Inc
Application granted granted Critical
Publication of ATE113757T1 publication Critical patent/ATE113757T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT86905535T 1985-08-28 1986-08-25 Verfahren und vorrichtung zum entfernen von schichten von substraten. ATE113757T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77027785A 1985-08-28 1985-08-28

Publications (1)

Publication Number Publication Date
ATE113757T1 true ATE113757T1 (de) 1994-11-15

Family

ID=25088031

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86905535T ATE113757T1 (de) 1985-08-28 1986-08-25 Verfahren und vorrichtung zum entfernen von schichten von substraten.

Country Status (8)

Country Link
EP (1) EP0235256B1 (de)
JP (1) JPH0626206B2 (de)
KR (1) KR910004039B1 (de)
CN (1) CN1005803B (de)
AT (1) ATE113757T1 (de)
CA (1) CA1275376C (de)
DE (1) DE3650127T2 (de)
WO (1) WO1987001508A1 (de)

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KR910004039B1 (ko) 1991-06-22
JPH0626206B2 (ja) 1994-04-06
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JPS62502930A (ja) 1987-11-19
CN86105419A (zh) 1987-04-29
DE3650127D1 (de) 1994-12-08
KR880700458A (ko) 1988-03-15
CA1275376C (en) 1990-10-23
CN1005803B (zh) 1989-11-15
DE3650127T2 (de) 1995-05-24
EP0235256A1 (de) 1987-09-09

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