ATE493368T1 - Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur - Google Patents

Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur

Info

Publication number
ATE493368T1
ATE493368T1 AT02707133T AT02707133T ATE493368T1 AT E493368 T1 ATE493368 T1 AT E493368T1 AT 02707133 T AT02707133 T AT 02707133T AT 02707133 T AT02707133 T AT 02707133T AT E493368 T1 ATE493368 T1 AT E493368T1
Authority
AT
Austria
Prior art keywords
silicon
gas
supply members
gas supply
silicon structure
Prior art date
Application number
AT02707133T
Other languages
English (en)
Inventor
Keiichi Shimaoka
Jiro Sakata
Takanori Mizuno
Katsuharu Okuda
Masayuki Matsui
Yasuhiko Suzuki
Original Assignee
Toyota Chuo Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Chuo Kenkyusho Kk filed Critical Toyota Chuo Kenkyusho Kk
Application granted granted Critical
Publication of ATE493368T1 publication Critical patent/ATE493368T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Micromachines (AREA)
  • Photovoltaic Devices (AREA)
AT02707133T 2001-03-29 2002-03-22 Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur ATE493368T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001096077 2001-03-29
PCT/JP2002/002807 WO2002079080A1 (en) 2001-03-29 2002-03-22 Production device and production method for silicon-based structure

Publications (1)

Publication Number Publication Date
ATE493368T1 true ATE493368T1 (de) 2011-01-15

Family

ID=18950044

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02707133T ATE493368T1 (de) 2001-03-29 2002-03-22 Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur

Country Status (8)

Country Link
US (2) US20040094086A1 (de)
EP (1) EP1382565B1 (de)
KR (1) KR100565032B1 (de)
CN (1) CN1263674C (de)
AT (1) ATE493368T1 (de)
DE (1) DE60238752D1 (de)
TW (1) TWI251626B (de)
WO (1) WO2002079080A1 (de)

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GB2487716B (en) * 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
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JP2013057526A (ja) 2011-09-07 2013-03-28 Seiko Epson Corp 赤外線検出素子、赤外線検出素子の製造方法及び電子機器
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Also Published As

Publication number Publication date
EP1382565B1 (de) 2010-12-29
KR100565032B1 (ko) 2006-03-30
EP1382565A4 (de) 2005-11-16
CN1263674C (zh) 2006-07-12
HK1061836A1 (en) 2004-10-08
TWI251626B (en) 2006-03-21
KR20040054611A (ko) 2004-06-25
US20040094086A1 (en) 2004-05-20
CN1484611A (zh) 2004-03-24
US20080257497A1 (en) 2008-10-23
DE60238752D1 (de) 2011-02-10
EP1382565A1 (de) 2004-01-21
WO2002079080A1 (en) 2002-10-10

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